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2N2483 Semicoa
2N2483 Semicoa
2C2484
Mechanical Specifications
Top Al - 19.5 kÅ min.
Metallization
Backside Au - 6.5 kÅ nom.
Emitter 3.6 mils diameter
Bonding Pad Size
Base 2.5 mils diameter
Die Thickness 8 mils nominal
Chip Area 18 mils x 18 mils
Top Surface Silox Passivated
Electrical Characteristics
TA = 25oC
Parameter Test conditions Min Max Unit
BVCEO IC = 10.0 mA, IB = 0 60 --- V dc
BVCBO IC = 10 µA, IE = 0 60 --- V dc
ICBO VCB = 45 Vc, IE = 0 --- 10 nA
hFE IC = 100 µA dc, VCE = 5.0 V 175 --- ---
Due to limitations of probe testing, only dc parameters are tested. This must be done with pulse width less
than 300 µs, duty cycle less than 2%.