AE - 1.1 BJT Biasing

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1.

1 BJT Circuits: DC biasing

1.1 DC Biasing
Module:1 DC and AC analysis of amplifiers
Course: BECE206L – Analog Circuits
-Dr Richards Joe Stanislaus
Assistant Professor - SENSE
Email: 51749@vitstudent.ac.in
1.1 BJT Circuits: DC biasing

Module 1:
Module:1 DC and AC analysis of amplifiers 9 hours
• BJT Circuits: DC biasing, AC coupling and small-signal analysis of
amplifiers, Frequency response of a CE amplifier, the three
frequency bands, Unity gain frequency, Miller Capacitance,
Multistage amplifiers. MOSFET Circuits: DC biasing, AC coupling
and small-signal analysis of amplifiers, Frequency response of a
CS amplifier, Unity gain frequency, MillerCapacitance, Multistage
amplifiers.
1.1 BJT Circuits: DC biasing

1. Bipolar junction transistor


• Three terminal device: holes and electrons are employed

• PNP transistor NPN transistor

𝐼𝐸 = 𝐼𝐶 + 𝐼𝐵
1.1 BJT Circuits: DC biasing

1. BJT: biasing
• DC power supply – used for biasing (conditioning) the circuit
• Any increase in ac voltage, current or power is the result of a
transfer of energy from applied DC supplies
• Basic relations:
𝑉𝐵𝐸 = 0.7𝑉
𝐼𝐸 = 𝛽 + 1 𝐼𝐵 ≈ 𝐼𝐶
𝐼𝐶 = 𝛽𝐼𝐵
• Biasing is for identification: - Q point
Applying dc voltages to establish a fixed level of current and voltage
1.1 BJT Circuits: DC biasing

1. BJT: Q point (operating point)


• For amplifiers: resulting dc current
and voltage establish an
operating point on characteristics
• Transistor maximum ratings:
𝐼𝐶max (Horizontal line)
𝑉𝐶𝐸max (Vertical line)
• Maximum power rating: 𝑃𝐶 max
• Left region: Saturation (𝑉𝐶𝐸 ≤ 𝑉𝐶𝐸 𝑠𝑎𝑡 )
• Lower end: Cut off(𝐼𝐵 ≤ 0𝜇𝐴)
1.1 BJT Circuits: DC biasing

1. BJT: Operating region


• Linear-region operation:
Base–emitter junction forward-biased
Base–collector junction reverse-biased
• Cutoff-region operation:
Base–emitter junction reverse-biased
Base–collector junction reverse-biased
• Saturation-region operation:
Base–emitter junction forward-biased
Base–collector junction forward-biased
1.1 BJT Circuits: DC biasing

1. BJT: Linear or Active operating region


• The base–emitter junction must be forward-
biased (p-region voltage more positive), with a
resulting forward-bias voltage of about 0.6 V to
0.7 V.
• The base–collector junction must be reverse-
biased (n-region more positive), with the
reverse-bias voltage being any value within the
maximum limits of the device.
1.1 BJT Circuits: DC biasing

2.1 Fixed Bias of BJT


• Input current : Base current

• Collector current:
• Emitter current:
• Collector to emitter Voltage:
1.1 BJT Circuits: DC biasing

2.2 Emitter Bias of BJT


• Coupling capacitors:
To couple ac only
1.1 BJT Circuits: DC biasing

2.2 Emitter Bias of BJT


• Coupling capacitors:
To couple ac only
1.1 BJT Circuits: DC biasing

2.2 Emitter Bias of BJT


• Base emitter loop:
1.1 BJT Circuits: DC biasing

2.2 Emitter Bias of BJT


• For the input circuit
Though IE flows through RE,
For the input circuit with base
current as input current, the
equivalent of IE in terms of IB is

So, for the input circuit in terms of base current only, the reflected
impedance at RE appears as if
1.1 BJT Circuits: DC biasing

2.2 Emitter Bias of BJT


• By writing the KVL,

• With 𝐼𝐶 ≈ 𝐼𝐸
1.1 BJT Circuits: DC biasing

2.2 Emitter Bias of BJT


• Input current : Base current

• Collector current:
• Emitter current:
• Input resistance:

• Collector to emitter Voltage:


1.1 BJT Circuits: DC biasing

2.3 Voltage divider bias


• Most widely used Biasing
• base circuit contains a voltage divider
(R1 and R2)
• Base current <<Current though divider
* Can assume Base is open for Voltage
calculation
𝑅2
• Output of voltage divider: 𝑉𝐵𝐵 = 𝑉𝐶𝐶
𝑅1 +𝑅2
• Equivalent to Fixed bias
1.1 BJT Circuits: DC biasing

2.3 Voltage divider bias: Steps to find Q point


𝑅2
1. base voltage 𝑉𝐵𝐵 = 𝑉𝐶𝐶
𝑅1 +𝑅2
2. 𝑉𝐸 = 𝑉𝐵𝐵 −0.7 V (Subtract 0.7 to get the
emitter voltage (use 0.3 V for germanium).
3. 𝐼𝐸 = 𝑉𝐸 /𝑅𝐸 (Find Emitter current
4. 𝑰𝑪 ≈ 𝐼𝐸 (Collector current is approximately
the emitter current)
5. Collector to ground voltage: 𝑉𝐶 = 𝑉𝐶𝐶 − 𝐼𝐶 𝑅𝐶 .
6. Collector to emitter voltage: 𝑽𝑪𝑬 = 𝑉𝐶 − 𝑉𝐸
1.1 BJT Circuits: DC biasing

2.3 Voltage divider bias: Example


𝑅2 2.2𝑘
1. base voltage 𝑉𝐵𝐵 = 𝑉𝐶𝐶 = 10 = 1.8𝑉
𝑅1 +𝑅2 10𝑘+2.2𝑘
2. 𝑉𝐸 = 𝑉𝐵𝐵 − 0.7𝑉 = 1.1𝑉.
1.1
3. 𝐼𝐸 = 𝑉𝐸 /𝑅𝐸 = 1𝑘
= 1.1𝑚𝐴
4. 𝑰𝑪 ≈ 𝐼𝐸 = 1.1𝑚𝐴
5. 𝑉𝐶 = 𝑉𝐶𝐶 − 𝐼𝐶 𝑅𝐶 = 10 − 1.1𝑚 ∗ 3.6𝑘 = 6.04𝑉.
6. 𝑽𝑪𝑬 = 𝑉𝐶 − 𝑉𝐸 = 4.94𝑉
1.1 BJT Circuits: DC biasing

2.3. Voltage divider bias:


1.1 BJT Circuits: DC biasing

2.3 Voltage divider bias


• Input side: Thevenin’s equivalent circuit:

• Substitute 𝐼𝐸 = 𝐼𝐶 + 𝐼𝐵 = 𝛽𝐼𝐵 + 𝐼𝐵
= 𝛽 + 1 𝐼𝐵
• Apply KVL to input side:
1.1 BJT Circuits: DC biasing

2.3 Voltage divider bias of BJT

• As in the previous case,


• As 𝐼𝐵 is very small when compared
to 𝐼1 (≈ 𝐼2 ),
The 𝑅𝑖 of the circuit should be
very large.
𝑅𝑖 ≫ 𝑅2 only then 𝐼1 ≈ 𝐼2
• 𝑅𝑖 ≥ 10𝑅2 :
1.1 BJT Circuits: DC biasing

2.3 Voltage divider bias of BJT


• Approximate analysis (Only if )
1.1 BJT Circuits: DC biasing

2.3 Voltage divider bias of BJT

• Input current : Base current

• Collector current:
• Emitter current:
• Collector to emitter Voltage:
1.1 BJT Circuits: DC biasing

Problem on Voltage divider bias


• Determine the 𝑉𝐶𝐸 and 𝐼𝑐 for the configuration
1.1 BJT Circuits: DC biasing

Problem on Voltage divider bias


• Determine the 𝑉𝐶𝐸 and 𝐼𝑐 for the configuration
1.1 BJT Circuits: DC biasing

Problem on Voltage divider bias


• Determine the 𝑉𝐶𝐸 and 𝐼𝑐 for the configuration
1.1 BJT Circuits: DC biasing

Problem on Voltage divider bias


• Determine the 𝑉𝐶𝐸 and 𝐼𝑐 for the configuration
1.1 BJT Circuits: DC biasing

Problem on Voltage divider bias


• Determine the 𝑉𝐶𝐸 and 𝐼𝑐 for the configuration
1.1 BJT Circuits: DC biasing

2.4 Collector Feedback Circuit


1.1 BJT Circuits: DC biasing

2.5 Emitter Follower


1.1 BJT Circuits: DC biasing

Problem on Emitter follower


• Determine VCEQ and IEQ
1.1 BJT Circuits: DC biasing

Problem on Emitter follower


• Determine VCEQ and IEQ
1.1 BJT Circuits: DC biasing

Problem on Emitter follower


• Determine VCEQ and IEQ
1.1 BJT Circuits: DC biasing

Problem on Emitter follower


• Determine VCEQ and IEQ

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