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Chapter 2. Transistors
Chapter 2. Transistors
Chapter 2. Transistors
1
Outline
• Bipolar Junction Transistor (BJT)
Simplified Structure and Modes of Operation
I-V Characteristics
Biasing of the BJT
BJT Circuit at DC
Small-Signal Operating Model
• Field Effect Transistor(FET)
Introduction
JFET and MOSFET
Small-Signal Operating Model
Textbook: Adel. S. Sedra, Kenneth C. Smith. Microelectronic Circuits.
Oxford University Press. 2011 (Chapter 5 and 6).
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1. Bipolar Junction Transistor (BJT)
1.1 Simplified Structure and Modes of Operation
Npn transistor Pnp transistor
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1. Bipolar Junction Transistor (BJT)
1.1 Simplified Structure and Modes of Operation
• BJT is a Current-Controlled Current Source (CCCS) or a Voltage-Controlled
Current Source (VCCS).
is called common-base
current gain
5
Large signal equivalent circuit models for npn
transistor in active mode
VCCS CCCS
Diode Expressing
conducts the as
base current
These models apply to any positive value of => Large signal models 6
Example 6.1 (P359)
• npn transistor: and
• E is grounded, B is fed with constant-current source supplying a dc current of
• C is connected to a 5V dc supply via a resistance
• Assuming the transistor is in the active mode, find 𝑩𝑬 and 𝑪𝑬
•
∗
CBJ is Reverse.
=> Transistor is indeed operating in the active mode
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Example 6.1 (P359)
=?
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1. Bipolar Junction Transistor (BJT)
1.1 Simplified Structure and Modes of Operation
• Saturation mode (npn):
EBJ: Forward; CBJ: Forward
increases, causing to
decrease and reach 0.
Why 𝑪 decreases in saturation?
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11
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Example 6.2 (P368)
The transistor has and at
Design the circuit so that a current of 2mA flows through C and a
voltage of +5V appears at C.
How to do?
Determine the operation mode?
Find ,
Solution
Since => CB reverse biased => BJT is in active
mode
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1. Bipolar Junction Transistor (BJT)
1.2 BJT I – V Characteristics
• Voltage polarities and current flow in Active mode
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1. Bipolar Junction Transistor (BJT)
1.2 BJT I – V Characteristics
•
• or )
• BJT Output Characteristic
Early Voltage,
Early Effect:
1 i VA
C ro Output resistance
ro vCE vBE const
IC
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1. Bipolar Junction Transistor (BJT)
1.2 BJT I – V Characteristics
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1. Bipolar Junction Transistor (BJT)
1.3 Biasing of the BJT
• It is the process of applying external voltages to it. In order to
use the BJT for any application like amplification, the two
junctions CB and CE should be properly biased according to the
required application.
KVL:
KVL:
𝑉
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1. Bipolar Junction Transistor (BJT)
1.3 Biasing of the BJT
• Biasing circuit using current feedback resistor
Thenevin equivalent: and
KVL:
: Active mode
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1. Bipolar Junction Transistor (BJT)
1.3 Biasing of the BJT
• Biasing BJT to Obtain Linear Amplification
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1. Bipolar Junction Transistor (BJT)
1.3 Biasing of the BJT
Exe 1.3.1
?
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1. Bipolar Junction Transistor (BJT)
1.3 Biasing of the BJT
Exe 1.3.2
?
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1. Bipolar Junction Transistor (BJT)
1.3 Biasing of the BJT
Exe 1.3.3
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1. Bipolar Junction Transistor (BJT)
1.3 Biasing of the BJT
Exe 1.3.4
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1. Bipolar Junction Transistor (BJT)
1.3 Biasing of the BJT
Exe 1.3.5
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1. Bipolar Junction Transistor (BJT)
1.4 Small-Signal Operating Model
• Analog circuits often operate with signal levels
that are small compared to the bias currents and
voltages in the circuit. The small signal models
allow calculation of circuit gain and terminal
impedances easily.
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1. Bipolar Junction Transistor (BJT)
1.4 Small-Signal Operating Model
• The I-V characteristic curves of the device can be replaced by the tangent
(straight line) at Q-point and the relationship between currents and voltages
can be determined easily based on linear equations. 29
1. Bipolar Junction Transistor (BJT)
1.4 Small-Signal Operating Model
• Collector Current and Transconductance
is called transconductance
Transconductance:
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1. Bipolar Junction Transistor (BJT)
1.4 Small-Signal Operating Model
• Base Current and Input resistance at base
(Because )
Input resistance
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1. Bipolar Junction Transistor (BJT)
1.4 Small-Signal Operating Model
• Emitter Current and Input resistance at Emitter
emitter resistance
• Voltage gain:
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1. Bipolar Junction Transistor (BJT)
1.4 Small-Signal Operating Model
• In the small signal mode, BJT can be considered as a linear two port
network containing two input and two outputs
i b y11vbe y12vce
i c y21vbe y22vce
𝑟 Input resistance
iB ib 1
y11
vBE Q
vbe vce 0
r
Reverse transconductance
i i
y12 B b
vCE Q vce v 0
be
Transconductance
i i
y21 C C gm
vBE Q vbe v
ce 0
r0 is output resistance
iC iC 1
y22 33
vCE vce v r0
Q be 0
1. Bipolar Junction Transistor (BJT)
1.4 Small-Signal Operating Model
• Hybrid- Model
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1. Bipolar Junction Transistor (BJT)
1.4 Small-Signal Operating Model
• T-Model
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1. Bipolar Junction Transistor (BJT)
1.4 Small-Signal Operating Model
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Exe 1.4.1
• Analyze the transistor amplifier shown in the below Figure to
determine its voltage gain . Assume .
DC analysis
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Exe 6.14
• Analyze the transistor amplifier shown in the below Figure to
determine its voltage gain . Assume .
AC analysis
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2. Field-Effect Transistor (FET)
2.1 Introduction
• High input impedance ( ).
• Temperature stable than BJT
• Smaller than BJT
• Less noise compare to BJT
: Insulated-gate FET
(Metal-Oxide Semiconductor FET)
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and
2. Field-Effect Transistor
2.2 JFET: Structure and Operation
• Three different transistor circuit configurations:
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2. Field-Effect Transistor
2.3 JFET: I-V Characteristics
• Transfer Characteristic:
• Output Characteristic:
Saturation
Cutoff voltage
Forward Transconductance
∆
∆
Transfer Characteristic
( )
( ) 44
2. Field-Effect Transistor
2.3 JFET: I-V Characteristics
• Output Characteristic
Linear/Ohmic/Triode Region
Saturation Region
Breakdown region
Linear region
(Ohmic)
Breakdown
Saturation region region
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2. Field-Effect Transistor
2.3 JFET: I-V Characteristics
• Family of output Characteristics
Cutoff voltage and Pinch-off Voltage?
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Example 1:
• For JFET with and .
Determine the minimum value of required to
put the device in the constant-current area of
operation.
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Example 1
•
• Minimum value of for JFET to be in its saturation
region:
• KVL:
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Example 2
• A particular p-channel JFET has
. What is when
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Example 2
• P-channel JFET required a positive gate-source voltage.
More positive voltage, less drain current.
• , then .
• => Further Increase ( , keep JFET cutoff
( )
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N-channel JFET
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Example 3
• N-channel JFET 2N5459
has and
(Maximum). Detemine
the drain current for
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Example 3
• ,
•
• ,
• 4,
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2. Field-Effect Transistor
2.4 JFET: Biasing circuits
• Fixed Bias:
• Self-Bias:
(Note: and )
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Example 4:
• For n-channel JFET in Figure,
internal parameter values such
as and are
such that a drain current ( ) of
approximately 5mA is produced.
Find and .
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Example 4
•
•
• =>
• Since
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Example 5
• Determine required to
self-bias a n-channel JFET
that has transfer
characteristic curve as in
Figure at
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Example 5
• From Figure, at
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2. Field-Effect Transistor
2.1 Introduction
(Junction Field-Effect Transistor)
: Insulated-gate FET
(Metal-Oxyt Semiconductor FET)
n channel p channel
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Example 6:
• For a certain DMOS, and
a) Is this an n-channel or p-channel?
b) Calculate at
c) Calculate at
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Example 6
-> n-channel DMOS
b)
c)
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2. Field-Effect Transistor
2.6 MOSFET: I-V Characteristics
• EMOS Transfer Characteristic:
n - channel p - channel
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Example 7
• An EMOS 2N7008 gives
at
and
. Determine
the drain current for
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Example 7
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2. Field-Effect Transistor
2.6 MOSFET: I-V Characteristics
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2. Field-Effect Transistor
2.7 MOSFET: Biasing Circuits
• DMOS Bias
Example:
and
Solution:
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2. Field-Effect Transistor
2.7 MOSFET: Biasing Circuits
• EMOS Bias Example (a):
( ) at and ( )
.
Solution (a):
( )
( )
( )
=63.8mA
Example (b):
and ( ) .
Solution (b):
=> =1.38mA
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