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Features
2 (' 3/
!
Characteristics
Symbol Conditions min. typ. max. Units
IGBT - Inverter, Chopper
! ,$ - 2 (' / 8 2 (' 5*':7 3 */@' 5(/('7 (/:' 5(/'7 ,
,
$5
7 ,
$ 2 ,$/ 2 * - ' '/@ %/' ,
" # $%&'&( ,$5C7 8 2 (' 5*':7 3 :/@ 5:/.7 :/D 5:/@7 ,
8 2 (' 5*':7 3 ( 5%(7 % 5%%7 -E
Typical Applications* ,$ 2 (' ,/ ,
$ 2 : ,/ 2 * > F */ 1
,$ 2 (' ,/ ,
$ 2 : ,/ 2 * > F :/*( 1
) ! * +, ,$ 2 (' ,/ ,
$ 2 : ,/ 2 * > F :/:@' 1
! - ! ./' +0
58;7 !
*/( GB0
Remarks 57 (@
, 2 %:: ,/ ,
$ 2 ? *' , :
,$ / ,12
! ) )
57 - 2 (' / 8 2 *':3 (D'
-!# - 2 *('3
2
2 ( E %@
-4# 5 ! -
$ ) (/%' -H
2 67
$ (/& -H
! # )
89*': 5 --# ! 2 ;: ### Diode - Inverter, Chopper
<*':37 ,1 2 ,$ 1- 2 (' / 8 2 (' 5*':7 3 (/ 5(/'7 (/.' 5(/@7 ,
,5C7 8 2 (' 5*':7 3 */& 5:/D7 */' 5*/*7 ,
8 2 (' 5*':7 3 5%(7 ': 5%@7 -E
58;7 ! */'( GB0
> (&/%
I 1- 2 (' / , 2 %:: , &/. J
$ ,
$ 2 : ,/ 8 2 *': 3 */% -H
1B 2 @': BJ
Diode - Rectifier
,1 1- 2 (' / 8 2 (' 3 */* ,
,5C7 8 2 *': 3 :/@ ,
8 2 *': 3 *& -E
58;7 ! */(' GB0
Temperature Sensor
& K/ 2 (' 5*::7 3 *:::5*%.:7 E
Mechanical Data
NAB %'
> > L ( (/' M-
Fig. 1 Typ. output characteristic Fig. 2 Typ. rated current vs. temperature IC = f (TS)
Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT and Diode Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. input bridge forward characteristic
!/ -
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of component characteristics.
Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON
products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We
therefore strongly recommend prior consultation of our personal.