Experiment No. 1 Diode Familiarization

Republic of the Philippines
PAMANTASAN NG LUNGSOD NG MAYNILA

(University of the City of Manila)
Muralla Street, Intramuros
Manila 1002, Philippines
COLLEGE OF ENGINEERING AND TECHNOLOGY

Computer Engineering Department
EXPERIMENT NO. 1 DIODE FAMILIARIZATION
OBJECTIVES
1. To determine the junction of a semiconductor diode

2. To determine the effects of the forward and reverse bias to a semiconductor
diode
3. To plot the characteristic curve of a semiconductor diode
MATERIALS
One (1) volt-ohm-meter (VOM) or digital multimeter (DMM)
One (1) general purpose diode (virtual diode, 1N4001)
One (1) 1ohm (Ω) resistor
One (1) Low voltage power supply
Page 1 of 16

THEORY
Figure 1. Semiconductor Diode
Semiconductor Diode
Diode is an electrical component that allows the flow of current in only one
direction. In circuit diagrams, a diode is represented by a triangle with a line across
one vertex.
The most common type of diode uses a p-n junction. In this type of diode, one
material (n) in which electrons are charge carriers abuts a second material (p) in
which holes (places depleted of electrons that act as positively charged particles) act
as charge carriers. At their interface, a depletion region is formed across which
electrons diffuse to fill holes in the p-side. This stops the further flow of electrons.
When this junction is forward biased (that is, a positive voltage is applied to the p-
side), electrons can easily move across the junction to fill the holes, and a current
flows through the diode. When the junction is reverse biased (that is, a negative
voltage is applied to the p-side), the depletion region widens, and electrons cannot
easily move across. The current remains very small until a certain voltage (the
breakdown voltage) is reached and the current suddenly increases
(https://www.britannica.com)
Page 2 of 16

Figure 2. Diode Characteristics
Diode Identification
There are many types of diodes that are being used in numerous applications.
These diodes differ in sizes and specifications. To distinguish one from the other, a
system of semiconductor and transistor identification shown below is used using the
EIA standard. The system uses numbers and letters to identify the diode. As shown
in Figure 2, the first character (X) indicates the number of junctions in the
semiconductor device. One (1) is designated to diode, two (2) is for transistor, and
three (3) for tetrode, a four-element transistor.
Page 3 of 16

Figure 3. EIA Standard for Semiconductor Identification Codes
The next character (N), following the first number indicates a semiconductor. The
number following the letter N indicates serialized identification of the semiconductor
components.
Page 4 of 16

Figure 4. Semiconductor Diode Markings
Semiconductor diodes are also marked accordingly to distinguish one end

from the other end. That is, the anode side from the cathode side. Manufacturers
often mark the other end of the diode with “k”, “+”, “cath”, a color dot, band, or unusual
end shape.
Page 5 of 16

The standard color markings in semiconductor diodes is presented in Figure

5. For example, a diode with brown, orange, and white bands at one terminal can be
identified using the color-coding scheme. With brown being a "1," orange a "3," and
white "9," then the device would be identified as a type 139 semiconductor diode, or
specifically 1N139.
Page 6 of 16

Figure 5. Standard Color Markings for Semiconductor Diodes
Page 7 of 16

PROCEDURE
A. Diode Testing (if multimeter and diode is physically available)

1. Using your VOM, you can check if the diode is good or bad. Set your VOM to
low resistance meter range such as “R x 100” range. Connect the positive lead
(probe) of the VOM to the diode’s anode terminal while the negative lead
(probe) to the diode’s cathode terminal. The VOM’s internal battery will
forward bias the diode. Record the resistance reading. _________________
2. If a DMM is available, DMM is equipped with the “diode check” feature. Set
your DMM into the diode symbol. The meter indicates a voltage drop across a
good diode when it is forward biased while it displays an out-of-range display,
“OL” when reversed biased. The DMM emits an audible sound when the
association of the probes with the leads of the diode is correctly done.
3. Now, reverse the VOM’s leads (probes) so that the meter’s positive terminal is
connected to the cathode terminal of the diode while the negative terminal is
connected to the anode terminal of the diode. Record the resistance reading.
___________________________
B. Diode Testing (using the MULTISIM Tool)

1. Determine the forward and reverse bias conditions of the virtual diode
a. Construct the circuit shown in Experimental Circuit 1 using the MULTISIM Tool.
b. Use a VIRTUAL DIODE and a DC SIGNAL VOLTAGE as the power source.
Page 8 of 16

Figure 1. Experimental Circuit 1
c. Set the DC Interactive Voltage source (Vin) to provide 0V to 10V supply with an
increment of 1%.
d. Using the table given in Table 1, run the circuit and fill out all the information
needed.
e. Press the A key for the source increment in the supply voltage, starting from 0V.
For every increment, indicate the Diode Voltage (VD), Diode Current (ID), and
Resistor Voltage (VR).
f. Compute for the Diode Resistance (RDC) for all the input voltages using
RDC = VD/ID
Page 9 of 16

VD ID
Vin
VR
Figure 2. Setting the DC Interactive Voltage Source
Table 1. Virtual Diode Forward Bias Condition
Input Diode Diode Resistor Diode

Voltage (Vin) Voltage Current Voltage Resistance
(VD) (ID) (VR) (RDC)
0
0.1
0.2
0.3
0.4
0.5
Page 10 of 16

0.6
0.7
…
2
4
6
8
10
g. Change the DC Interactive Voltage source (Vin) to provide -5V to 0V and repeat
procedure (d) and fill out Table 2.
Table 2. Virtual Diode Reverse Bias Condition

-500
-400
-300
…
-100
-80
-60
…
-10
-8
…
Page 11 of 16

-5
-4
…
-0.9
-0.8
…
-0.1
0
h. Compute for RDC for all the input voltages. Fill out the column in Table 2.
i. Change the setting of DC Interactive voltage to -500V to 0V. Run the circuit.
Measure and record the Diode Voltage (VD), Diode Current (ID), and Resistor
Voltage (VR). Compute for Diode Resistance (RDC).
2. Use 1N4001 model for the second test. Repeat steps (c) to (i) using Tables 3 and 4
respectively.
Table 3. 1N4001 Diode Forward Bias Condition

0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Page 12 of 16

…
2
4
6
8
10
Table 4. 1N4001 Diode Reverse Bias Condition

-500
-400
-300
…
-100
-80
-60
…
-10
-8
…
-5
-4
…
-0.9
-0.8
Page 13 of 16

…
-0.1
0
C. Diode Characteristic Curve

1. From the values obtained in Table 1 and Table 2, plot the diode voltage (VD) readings
along the x-axis and the diode current (ID) readings along the y-axis. Properly label
the x-axis and y-axis of your graph. Refer it as Figure 1. Virtual Diode
Characteristic Curve.
2. Plot the values obtained from Table 3 and Table 4 using 1N4001 model. Properly label
the graph. Refer it as Figure 2. 1N4001 Diode Characteristic Curve.
Figure 1. Virtual Diode Characteristic Curve
Page 14 of 16

Figure 2. 1N4001 Diode Characteristic Curve
DATA AND RESULTS
Place all the result of the experiment here (tables and graphs)
OBSERVATION
A. Compare the results of static or dc resistance of the diodes obtained from different
values of forward currents.
B. Compare the results of static or dc resistance of the diodes obtained from different
values of reverse voltages.
C. Compare the result of using a VIRTUAL DIODE vs 1N4001.
Page 15 of 16

QUESTIONS/PROBLEMS
A. Does the reverse saturation current of the diode change significantly in magnitude
for the reverse-bias potentials? Explain.
B. Compare the result of using a VIRTUAL DIODE vs 1N4001, at what values will the
diode start to reach the Zener region? Explain.
C. Using the obtained characteristic curve of the virtual diode and commercially
available diode 1N4001, find the operating point (Quiescent point)- 𝑽𝑫𝑸 and 𝑰𝑫𝑸
respectively using load line analysis. Also, determine VR.
CONCLUSION
References:
https://ecstudiosystems.com
Britannica, T. Editors of Encyclopaedia (2018, March 5). diode. Encyclopedia

Britannica. https://www.britannica.com/technology/diode
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Republic of the Philippines

PAMANTASAN NG LUNGSOD NG MAYNILA

COLLEGE OF ENGINEERING AND TECHNOLOGY