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IRFM120A
Power MOSFET, N-Channel, A-FET, 100 V, 2.3 A, 0.2 Ω,
SOT-223

Product Overview
For complete documentation, see the data sheet.
These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, planar,
DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior
switching performance, ad withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for
high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and
motor control.

Features
• Avalanche Rugged Technology

• Rugged Gate Oxide Technology

• Lower Input Capacitance

• Improved Gate Charge

• Extended Safe Operating Area

• Lower Leakage Current : 10 A (Max.) @ VDS = 100 V

• Lower rDS(on) : 0.155 (Typ.)

Applications
• Other Industrial

Part Electrical Specifications

RD RD RD Qg
S(o S(o Qg
n) n) S(o Ty
M M n) Ty
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an VG ID PD ax @ Cis SL nt nt
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ne S
M M @ VG s
Te ai ai
gu
DSS
M )
VG VG VG Ty ag O SL
Product Status Compilance l Mi M ax ax VG S
m ne ne
rat n ax ax S S = S p e utl Ty
Po (A (W = = S = p r r
io (V (V (V = 4. (p Ty in pe
lar ) ) 2. 4. 10 (° Ty Qt
n ) ) ) 10 5 F) pe e
ity 5 5 V C) pe y.
V V
V V (n
(m (n
(m (m C)
Ω) C)
Ω) Ω)

S
O
T- 31
N- 22 8
Ch Si 3-
10 ±2 2. 2. 20 37 H- 25 RE 40
IRFM120ATF Active an ng 4 - - - 16 4/ 1
0 0 3 4 0 0 01 0 EL 00
ne le T .P
l O- DF
26
1-
4

IRFM120A Power MOSFET, N-Channel, A-FET, 100 V, 2.3 A, 0.2 Ω, SOT-223 pg 1 / 1