UNIVERSITY OF SOUTH AFRICA

SCHOOL OF ENGINEERING
CONTINUOUS ASSESSMENT

Assessment 5 – Major Re-Test

Semester 1

EHF3701

HIGH FREQUENCY ELECTRONICS

Examiner: Mr. W.D Govender

Marks: 65 Weight of Assessment: 30%
Duration: 120 Minutes
INSTRUCTIONS TO ALL STUDENTS:

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QUESTION 1

1.1. Explain, two (2) points in detail, about what the process of impedance matching
aims to achieve. [4]

1.2. A copper microstrip transmission line is to be designed for a 100 Ω characteristic

impedance. The substrate is 0.51 𝑚𝑚𝑚𝑚 thick, 𝜀𝜀𝑟𝑟 = 2.2 and 𝑡𝑡𝑡𝑡𝑡𝑡𝛿𝛿 = 0.001. At 5 𝐺𝐺𝐺𝐺𝐺𝐺,
find the:
1.2.1. guide wavelength on the line (in 𝑐𝑐𝑐𝑐) and; [8]
1.2.2. the total attenuation in dB/cm. [4]
[16]

QUESTION 2

2.1. What would one consider when defining equivalent voltage, current and impedance
for waveguides for non-TEM transmission lines? [4]

2.2. When do you use the ABCD matrix method to analyze microwave networks? [1]

2.3. Mention the two primary components used in signal flow graph technique when
analyzing microwave networks. [2]

2.4. A waveguide load with an equivalent 𝑇𝑇𝑇𝑇10 wave impedance of 377 Ω must be
matched to an air-filled X-band rectangular guide (𝑎𝑎 = 2.286 𝑐𝑐𝑐𝑐) at 10 𝐺𝐺𝐺𝐺𝐺𝐺. A
quarter-wave matching transformer is to be used and is to consist of a section of
guide filled with dielectric.

Determine the:
2.4.1. propagation constant of the air-filled guide 𝛽𝛽𝑎𝑎 ; [3]
2.4.2. impedance of the air-filled guide 𝑍𝑍𝑎𝑎 ; [2]
2.4.3. impedance of the matching section 𝑍𝑍𝑚𝑚 ; [2]
2.4.4. propagation constant of the matching section 𝛽𝛽𝑚𝑚 ; [2]
2.4.5. required dielectric constant of the matching section 𝜀𝜀𝑟𝑟 ; and [2]
2.4.6. the physical length of the matching section. [2]
[20]

1
QUESTION 3
3.1. A resonator is constructed from a 3.0 𝑐𝑐𝑐𝑐 length of 100 Ω air-filled coaxial line,
shorted at one end and terminated with a capacitor at the other end, as shown in
Figure 1.

Figure 1

3.1.1. Assume a lossless line and determine the capacitor value to achieve the
lowest order resonance at 6.0 𝐺𝐺𝐺𝐺𝐺𝐺. [8]
3.1.2. Now assume that loss is introduced by placing a 10 𝑘𝑘Ω resistor in parallel
with the capacitor. Calculate the unloaded 𝑄𝑄. [2]
[10]

QUESTION 4
4.1. Design a composite high-pass filter by the image parameter method with the
following specifications: 𝑅𝑅0 = 75Ω, 𝑓𝑓𝑐𝑐 = 50 𝑀𝑀𝑀𝑀𝑀𝑀, and 𝑓𝑓∞ = 48 𝑀𝑀𝐻𝐻𝐻𝐻. Refer to
Table 1. [10]

4.2. A GaAs FET has the following scattering and noise parameters at 8.0 𝐺𝐺𝐺𝐺𝐺𝐺 (with
𝑍𝑍0 = 50Ω):
𝑆𝑆11 = 0.7⦟ − 110°
𝑆𝑆12 = 0.02⦟ + 60°
𝑆𝑆21 = 3.50⦟ + 60°
𝑆𝑆22 = 0.8⦟ − 70°
𝐹𝐹𝑚𝑚𝑚𝑚𝑚𝑚 = 2.5 𝑑𝑑𝑑𝑑
𝛤𝛤𝑜𝑜𝑜𝑜𝑜𝑜 = 0.7⦟ + 120°
𝑅𝑅𝑁𝑁 = 15 Ω
You are required to design an amplifier with minimum noise figure and maximum
possible gain.
4.2.1. Determine the stability of the device. [4]
4.2.2. What source reflection coefficient value does the minimum noise figure
occur for? [1]
4.2.3. Determine the maximum possible gain in 𝑑𝑑𝑑𝑑. [4]
[19]
End of Test!
Total: [65]

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 Formula Sheet

2𝜋𝜋𝜋𝜋
𝛽𝛽 = 𝑍𝑍𝑖𝑖𝑖𝑖 = 𝑗𝑗𝑍𝑍0 tan(𝛽𝛽ℓ)
𝑐𝑐

𝑔𝑔𝑚𝑚 + 𝐺𝐺0 𝐺𝐺0 𝐿𝐿3

𝑅𝑅 = � − � 𝑍𝑍𝑖𝑖𝑖𝑖 = 𝑍𝑍0 tanh(𝛼𝛼 + 𝑗𝑗𝑗𝑗 ) ℓ
𝜔𝜔0 2 𝐶𝐶1 𝐶𝐶2 𝐶𝐶2

𝟏𝟏 𝟏𝟏
𝑮𝑮𝑻𝑻𝑻𝑻𝑴𝑴𝑴𝑴𝑴𝑴 = |𝑺𝑺𝟐𝟐𝟐𝟐 |𝟐𝟐
𝟏𝟏 − |𝑺𝑺𝟏𝟏𝟏𝟏 |𝟐𝟐 𝟏𝟏 − |𝑺𝑺𝟐𝟐𝟐𝟐 |𝟐𝟐

1 1 + 𝛽𝛽 𝐿𝐿3 𝜔𝜔0 𝐿𝐿3

𝑅𝑅𝑚𝑚𝑚𝑚𝑚𝑚 = � − � 𝑅𝑅 =
𝑅𝑅𝑖𝑖 𝜔𝜔0 𝐶𝐶1 𝐶𝐶2 𝐶𝐶1 𝑄𝑄

𝐶𝐶′1 𝐶𝐶2 1
= 2
𝐶𝐶′1 + 𝐶𝐶2 𝜔𝜔0 𝐿𝐿3

3
 𝐶𝐶1 = 𝐶𝐶 ′1 (1 + 𝑅𝑅𝐺𝐺𝑖𝑖 )

𝑐𝑐
𝜆𝜆 =
𝑓𝑓√𝜀𝜀𝑟𝑟

|∆| = |𝑺𝑺𝟏𝟏𝟏𝟏 𝑺𝑺𝟐𝟐𝟐𝟐 − 𝑺𝑺𝟏𝟏𝟏𝟏 𝑺𝑺𝟐𝟐𝟐𝟐 |

𝟏𝟏 − |𝑺𝑺𝟏𝟏𝟏𝟏 |𝟐𝟐 − |𝑺𝑺𝟐𝟐𝟐𝟐 |𝟐𝟐 + |∆|𝟐𝟐

𝑲𝑲 =
𝟐𝟐|𝑺𝑺𝟏𝟏𝟏𝟏 𝑺𝑺𝟐𝟐𝟐𝟐 |

1 1 |𝑆𝑆21 |2 (1 − |𝛤𝛤𝑆𝑆 |2 )(1 − |𝛤𝛤𝐿𝐿 |2 )

𝑃𝑃𝐴𝐴𝐴𝐴𝐴𝐴 = |𝑉𝑉𝑆𝑆 |2 𝐺𝐺𝑇𝑇𝑇𝑇 =
2 4𝑍𝑍𝑆𝑆 |1 − 𝑆𝑆11 𝛤𝛤𝑆𝑆 |2 |1 − 𝑆𝑆22 𝛤𝛤𝐿𝐿 |2

4
 𝑍𝑍𝐿𝐿 + 𝑗𝑗𝑍𝑍1 𝑡𝑡 𝑄𝑄 = 𝜔𝜔0 𝑅𝑅𝑅𝑅
𝑍𝑍𝑖𝑖𝑖𝑖 = 𝑍𝑍1
𝑍𝑍1 + 𝑗𝑗𝑍𝑍𝐿𝐿 𝑡𝑡

𝟏𝟏 − |𝑺𝑺𝟏𝟏𝟏𝟏 |𝟐𝟐
𝝁𝝁 =
|𝑺𝑺𝟐𝟐𝟐𝟐 − ∆𝑺𝑺𝟏𝟏𝟏𝟏 ∗ | + |𝑺𝑺𝟏𝟏𝟏𝟏 𝑺𝑺𝟐𝟐𝟐𝟐 |

5
𝜑𝜑(𝑓𝑓𝑚𝑚 ) = 𝐶𝐶 (𝑑𝑑𝑑𝑑𝑑𝑑) − 𝑆𝑆(𝑑𝑑𝑑𝑑) − 𝐼𝐼 (𝑑𝑑𝑑𝑑𝑑𝑑) − 10 log(𝐵𝐵)

6
Table 1: Summary of Composite Filter Design

7
Table 2: Summary of Results for Plane Wave Propagation in Various Media

Table 3: Summary of Results for Circular Waveguide

8
Table 4: Summary of Results for Rectangular Waveguide

Table 5: Summary of Results for Parallel Plate Waveguide

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 ′
Table 6: Values of 𝑝𝑝𝑛𝑛𝑛𝑛 for TE Modes of a Circular Waveguide

Table 7: Values of 𝑝𝑝𝑛𝑛𝑛𝑛 for TM Modes of a Circular Waveguide

Figure 2: Cutoff frequencies of the first few TE and TM modes of a circular waveguide relative to the cutoff frequency of the
dominant 𝑇𝑇𝑇𝑇11 mode.

Table 8: ABCD Parameters

10
Table 9: Conversions Between Two-Port Network Parameters

11
Table 10: Binomial Transformer Design

Table 11: Chebyshev Transformer Design

12
 Figure 3: Attenuation vs normalized frequency for maximally flat filter prototypes

Figure 4: Attenuation vs normalized frequency for equal-ripple filter prototypes with 3.0 dB ripple level

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 Table 12: Element Values for Maximally Flat Low-Pass Filter Prototypes (g0 = 1, ωc = 1, N = 1 to 10)

Table 13: Element Values for Equal-Ripple Low-Pass Filter Prototypes (g0 = 1, ωc = 1, N = 1 to 10. 3.0 dB ripple)

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 MRF137 RF power field effect transistor, Guaranteed 28 Volt, 150 MHz Performance,
Output Power = 30 Watts, Minimum Gain = 13 dB, Efficiency — 60% (Typical)

|S11| ∠f |S21| ∠f |S12| ∠f |S22| ∠f

90 0.817 –171 4.560 83 0.038 12 0.787 –171
100 0.817 –172 4.170 81 0.039 13 0.787 –172
110 0.818 –173 3.670 80 0.039 13 0.788 –172
120 0.820 –173 3.420 79 0.039 13 0.788 –173
130 0.821 –173 3.170 79 0.039 13 0.788 –173
140 0.822 –174 2.980 78 0.039 13 0.788 –173
150 0.823 –175 2.826 77 0.039 14 0.788 –173
160 0.824 –175 2.650 76 0.039 14 0.790 –174
400 0.865 +178 0.927 51 0.043 35 0.856 –174
425 0.875 +178 0.876 49 0.045 37 0.866 –174
450 0.881 +178 0.810 46 0.046 40 0.870 –174
475 0.886 +177 0.755 44 0.046 43 0.875 –174
500 0.887 +177 0.694 41 0.051 43 0.888 –174
525 0.888 +176 0.677 39 0.052 43 0.890 –174
550 0.896 +176 0.625 36 0.055 45 0.898 –174
575 0.907 +175 0.603 34 0.058 45 0.913 –174
600 0.910 +175 0.585 32 0.061 45 0.918 –174
Table 14

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