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3Kw and 5Kw Half-Bridge Class-D RF Generators at 13.56 MHZ With 89% Efficiency and Limited Frequency Agility
3Kw and 5Kw Half-Bridge Class-D RF Generators at 13.56 MHZ With 89% Efficiency and Limited Frequency Agility
DEI / IXYS has developed an RF generator design for very high power at a ISM frequency. of 13.56MHz, using a pair of
DE375-102N12A MOSFETS driven by DEIC420 gate drive ICs, in a half-bridge operating in Class-D with limited frequency
agility, to generate 3kW of output power at 83.5% efficiency. A pair of modules generates 5KW at 89% efficiency using a total
of four DE375-102N12A RF MOSFETs. This technical note discussed the design of this RF generator and supporting SPICE
models.
+VGDV
R13
+15V 1 1W L1
+ C19 C1 C2 6uH
4.7UF 16V .01UF 200V 0.1UF 200V
+5V 0.01UF C47 C20 0.01UF
C13 0.47
C12
0.47 U5 DEIC420 U4 C9 680pF
14 1 6 1 6 J2
4 +VCC GND SG1 SD1
U1A SMB VERT JACK
PR VCC
2 5 2 5 2 5
D Q IN OUT GATE DRAIN
+5V PULSE WIDTH ADJ. C10 680pF
74ACT74N 3 4 3 4 J3
3 GN 6 +VCC GND SG2 SD2 SMB VERT JACK
CLK D Q 3
CL R3 C5 0.47 501N04A
R12 R6 511
VU3 3.32 500 25T 0.01UF C50 C7 0.01UF
1 7 2 C16 680pF
0.01UF C51 C6 0.01UF J4
+5V C18 1 SMB VERT JACK
0.47 0.01UF C52 C4 0.01UF
10 14 C11 R5 1
U1B 100PF 51.1 D1 + C3
R9 PR VCC MBD301 4.7UF 16V
3.32 U2 12 9 3
27.12 MHz D Q 2 R1
R11 R6A 1 1W
8 1K 500 25T
VCC 5 11 GN 8 2 PHASE ADJ.
C17 OUTPUT CLK
CL D Q +15V +VGDV
0.47 4
GND R10 74ACT74N R28
13
1K 7 1 C11A +15V 1 1W L2
100PF + C37 C44 C40 6uH
4.7UF 16V .01UF 200V 0.1UF 200V
+5V 0.01UF C53 C39 0.01UF
C34 0.47
C22
0.47 U7 DEIC420 U6 C29 680pF
14 1 6 1 6 J6
4 +VCC GND SG1 SD1
U3A SMB VERT JACK
R4 PR VCC
220 1/4W 2 5 2 5 2 5
D Q IN OUT GATE DRAIN
C30 680pF
74ACT74N PULSE WIDTH ADJ. 3 4 3 4 J7
3 GN 6 +VCC GND SG2 SD2 SMB VERT JACK
CLK D Q 3
CL R15 C24 0.47 501N04A
C59 R17 511
100PF 500 25T 0.01UF C56 C27 0.01UF
1 7 2 C36 680pF
0.01UF C57 C26 0.01UF J8
MH1 1 1 SMB VERT JACK
0.01UF C58 C25 0.01UF
C21 R16 1
MH2 1 100PF 51.1 D2 + C23
MBD301 4.7UF 16V
MH3 1 2 R18
1 1W
MH4 1 VU7
+15V
10 14
U3B
JP1 PR VCC
R23 R25 +5V 12 9
1 2 1 1/2W 0 4BEADS 1/2W D Q
3 4
5 6 74ACT74N
7 8 R26 +15V C31 11 GN 8
9 10 0 4BEADS 1/2W C32 0.47 + C33 CLK
CL D Q
11 12 R30 +VGDV 0.47 10UF 35V
13 14 0 4BEADS 1/2W 13
14(2X7) PIN BERG C41 7
C42 0.47 + C43
C45 C46 0.47 10UF 35V
0.1UF 200V 0.1UF 200V
25uH
C19 C13 C14 C15 C16 C17 C18 C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 C11 C12
.01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01
U1
102N10A
MH1 J1
SMB T1 1 6 E1
1 XXuH SG1 SD1 RF GROUND
1 4
2 5
MH2 GATE DRAIN 1
1
2 5
3 3 4
SG2 SD2 E2
MH3 RF OUTPUT
1 U2
102N10A
J2 1
MH4 SMB XXuH 1 6
1 T2 SG1 SD1
1 4
2 5 E3
GATE DRAIN RF GROUND
2 5
3 3 4
SG2 SD2 1
Having completed the 3KW half bridge, the next logical step
is to combine two modules from the preceding section to
provide a 5KW system. The combiner that was used for this
development is shown below in Figure 15.
RF INPUT A
Table 3 3KW Spice Data
C2 RF TRANSFORMER
100pF X6 7.2KV 1:4 RF OUTPUT to 50 OHMS
Po W Vin V Iin A Pin W VdsPk V Eff. % Ploss W
240 221 1.4 309 224 80.8 69 RF INPUT B
C3
60pF 7.2KV
480 314 1.9 597 315 82.1 117 C4 5100pF X2 L2 384nH
Conclusion
The half bridge and full bridge designs also allow the full
utilization of the device operating envelope and therefore the
Figure 17. 5KW Drain Voltage Waveform ability to launch the most power for the least number of
components. With a high voltage supply of 700V to 800V, the
currents in the power stage are very low when compared to a
low voltage solution. This reduces the cost of many of the
passive components in both the high voltage power supply
and the RF tank circuits.
References
2. Mihai Albulet
RF POWER AMPLIFIERS
Copyrighted 2001, Noble Publishing
ISBN 1-884932-12-6