UNISONIC TECHNOLOGIES CO.

, LTD
75N75 Power MOSFET

75Amps, 75Volts
N-CHANNEL POWER MOSTFET 1 TO- 251

DESCRIPTION 1
TO-252
The UTC 75N75 is n-channel enhancement mode power field
effect transistors with stable off-state characteristics, fast
switching speed, low thermal resistance, usually used at telecom
and computer application. 1 TO-220

FEATURES
* RDS(ON) = 12.5mΩ @VGS = 10 V 1
TO-220F
* Ultra low gate charge ( typical 90 nC )
* Fast switching capability *Pb-free plating product number: 75N75L
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness

SYMBOL
2.Drain

1.Gate

3.Source

ORDERING INFORMATION
Order Number Pin Assignment
Package Packing
Normal Lead Free Plating 1 2 3
75N75-TA3-T 75N75L-TA3-T TO-220 G D S Tube
75N75-TF3-T 75N75L-TF3-T TO-220F G D S Tube
75N75-TM3-T 75N75L-TM3-T TO-251 G D S Tube
75N75-TN3-R 75N75L-TN3-R TO-252 G D S Tape Reel
75N75-TN3-T 75N75L-TN3-T TO-252 G D S Tube
Note: Pin Assignment: G: Gate D: Drain S: Source

75N75L-TA3-T (1) T: Tube, R: Tape Reel

(1)Packing Type
(2) TA3: TO-220, TF3: TO-220F, TM3: TO-251,
(2)Package Type TN 3: TO-252
(3)Lead Plating (3) L: Lead Free Plating, Blank: Pb/Sn

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75N75 Power MOSFET

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL RATINGS UNIT
Drain to Source Voltage VDSS 75 V
TC = 25℃ 75 A
Continuous Drain Current ID
TC = 100℃ 56 A
Drain Current Pulsed (Note 1) IDM 300 A
Gate to Source Voltage VGS ±20 V
Single Pulsed (Note 2) EAS 900 mJ
Avalanche Energy
Repetitive (Note 1) EAR 300 mJ
Peak Diode Recovery dv/dt (Note 3) dv/dt 15 V/ns
TC = 25℃ 220 W
Total Power Dissipation PD
Derating above 25℃ 1.4 W/℃
Junction Temperature TJ +150 ℃
Storage Temperature TSTG -55 ~ +150 ℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER SYMBOL MIN TYP MAX UNIT
Thermal Resistance Junction-Ambient θJA 62.5 ℃/W
Thermal Resistance Junction-Case θJC 0.8 ℃/W
Thermal Resistance Case-Sink θCS 0.5 ℃/W

ELECTRICAL CHARACTERISTICS (TC = 25℃, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 µA 75 V
Breakdown Voltage Temperature ID = 1mA,
△BVDSS/△TJ 0.08 V/℃
Coefficient Referenced to 25℃
VDS = 75 V, VGS = 0 V 20 µA
Drain-Source Leakage Current IDSS VDS = 75 V, VGS = 0 V,
250 µA
TJ = 150℃
Gate-Source Leakage Current VGS = 20V, VDS = 0 V 100 nA
IGSS
Gate-Source Leakage Reverse VGS = -20V, VDS = 0 V -100 nA
On Characteristics
Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250 µA 2.0 4.0 V
Static Drain-Source On-State
RDS(ON) VGS = 10 V, ID = 48 A 12.5 15 mΩ
Resistance
Dynamic Characteristics
Input Capacitance CISS 3300 pF
VGS = 0 V, VDS = 25 V
Output Capacitance COSS 530 pF
f = 1MHz
Reverse Transfer Capacitance CRSS 80 pF
Switching Characteristics
Turn-On Delay Time tD(ON) 12 ns
Rise Time tR VDD = 38V, ID =48A, 79 ns
Turn-Off Delay Time tD(OFF) VGS=10V, (Note 4, 5) 80 ns
Fall Time tF 52 ns
Total Gate Charge QG 90 140 nC
VDS = 60V, VGS = 10 V
Gate-Source Charge QGS 20 35 nC
ID = 48A, (Note 4, 5)
Gate-Drain Charge (Miller Charge) QGD 30 45 nC

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75N75 Power MOSFET

ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Source-Drain Diode Ratings and Characteristics
Continuous Source Current IS 75
A
Pulsed Source Current ISM 300
Diode Forward Voltage VSD IS = 48A, VGS = 0 V 1.4 V
Reverse Recovery Time trr IS = 48A, VGS = 0 V 90 ns
Reverse Recovery Charge Qrr dIF / dt = 100 A/µs 300 µC
Note 1. Repeativity rating: pulse width limited by junction temperature
2. L=0.24mH, IAS=48A, RG=20Ω, Starting TJ=25℃
3. ISD≤48A, di/dt≤300A/µs, VDD≤BVDSS, Starting TJ=25℃
4. Pulse Test: Pulse Width≤300µs,Duty Cycle≤2%
5. Essentially independent of operating temperature.

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75N75 Power MOSFET
TEST CIRCUITS AND WAVEFORMS

D.U.T. +

VDS

-
+

- L

RG
Driver VDD
* dv/dt controlled by RG
Same Type * I SD controlled by pulse period
VGS * D.U.T.-Device Under Test
as D.U.T.

Fig. 1A Peak Diode Recovery dv/dt Test Circuit

VGS Period P. W.
D=
(Driver) P.W. Period

VGS= 10V

I FM, Body Diode Forward Current

ISD
(D.U.T.) di/dt

IRM

Body Diode Reverse Current

Body Diode Recovery dv/dt

VDS
(D.U.T.) VDD

Body Diode Forward Voltage Drop

Fig. 1B Peak Diode Recovery dv/dt Waveforms

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75N75 Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)

RL
VDS
VDS 90%

VGS VDD
RG

10%
VGS
10V D.U.T. t D(ON ) tD (OFF)
Pulse Width ≤ 1μs tR tF
Duty Factor ≤0.1%

Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms

Same Type
50kΩ as D.U.T.
QG
12V 10V
0.2μF 0.3μF
VDS
QGS QGD
VGS

DUT
VG
1mA

Charge

Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform

L
VDS

BVDSS

RD
VDD

10V D.U.T.
tp IAS
tp Time

Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms

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75N75 Power MOSFET
TYPICAL CHARACTERISTICS

On-State Characteristics Transfer Characteristics

V GS
Top: 15V
10 V
8 V

℃
102 7 V
Drain Current, ID (A)

Drain Current, ID (A)

102

1 50
6 V
5 .5V
5V
Bottorm : 4.5V

4.5V
101 10 1

℃
25
Note:
1. VDS=25V
2. 20µs Pulse Test
100 100
10-1 10 0 101 2 3 4 5 6 7 8 9 10
Drain-Source Voltage, VDS (V) Gate-Source Voltage, VGS (V)

On-Resistance Variation vs. Drain Reverse Drain Current vs. Allowable Case
Drain-Source On-Resistance, RDS(ON) (mΩ)

Current and Gate Voltage Temperature

15

102
Reverse Drain Current, ISD (A)

14

150℃
13 VGS=10V
10 1 25℃

12
*Note:
1. VGS=0V
2. 250µs Test
11 10 0
0 10 20 30 40 50 60 70 80 90 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Drain Current, I D (A) Source-Drain Voltage, VSD (V)

Capacitance Characteristics
(Non-Repetitive) Gate Charge Characteristics
6000 12
CISS=CGS+C GD (CDS=shorted)
Gate-to-Source Voltage, VGS (V)

COSS =CDS+C GD
5000 CRSS=CGD 10
C ISS
Capacitance (pF)

4000 8
VDS=38V
3000 6 VDS=60V

2000 *Note: 4
1. VGS=0V
1000 2. f = 1MHz 2
CRSS *Note: ID=48A
COSS
0 0
5 10 15 20 25 30 35 0 5 10 15 20 25 30 35 40 45
Drain-Source Voltage, VDC (V) Total Gate Charge, Q G (nC)

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75N75 Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)

Breakdown Voltage Variation vs. On-Resistance Variation vs.

Junction Temperature Junction Temperature

Drain-Source On-Resistance, RDS(ON),

1.2 3.0
Drain-Source Breakdown Voltage,

2.5
1.1
BVDSS(Normalized)

2.0

(Normalized)
1.0 1.5

*Note: 1.0
0.9 1. VGS=0V *Note:
2. ID=250µA 0.5 1. VGS=10V
2. I D=3.5A
0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
Junction Temperature, T J (℃) Junction Temperature, T J (℃)

Maximum Drain Current vs. Case

Maximum Safe Operating
Temperature
Operation in This 70
100
Area by RDS(ON) 60
Drain Current , ID,(A)

Drain Current, ID (A)

50
100µs
10
10ms 40
1ms
30
DC
1 *Note: 20
1. T c=25℃
2. T J=150℃ 10
3. Single Pulse
0.1 0
1 10 100 1000 25 50 75 100 125 150
Drain-Source Voltage, VD (V) Case Temperature, T C (℃)

Transient Thermal Response Curve

Thermal Response, ZθJC (t)

1
D=0.5

0.2
0.1
0.1
0.05
0.02

0.01 *Note:
1. ZθJ C (t) = 0.88℃/W Max.
0.01 2. Duty Factor , D=t1/t2
Single pulse 3. TJ -TC =PDM×ZθJ C (t)

1E-5 1E-4 1E-3 0.01 0.1 1 10

Square Wave Pulse Duration, t 1 (sec)

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75N75 Power MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

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