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j o u r n a l o f m a t e r i a l s r e s e a r c h a n d t e c h n o l o g y 2 0 2 2 ; 1 8 : 4 7 7 5 e4 7 8 5

Available online at www.sciencedirect.com

journal homepage: www.elsevier.com/locate/jmrt

Original Article

Probing direct bandgap of double perovskites


Rb2LiTlX6 (X ¼ Cl, Br) and optoelectronic
characteristics for Solar cell applications: DFT
calculations

Mumtaz Manzoor a, M. Waqas Iqbal a, M. Imran b, N.A. Noor a,*,


Asif Mahmood c,**, Yousaf Mohammed Alanazi c, Sikandar Aftab d
a
Department of Physics, RIPHAH International University, Campus Lahore, Pakistan
b
Department of Physics, GC University Lahore, Pakistan
c
College of Engineering, Chemical Engineering Department, King Saud University Riyadh, 11451, Saudi Arabia
d
Department of Intelligent Mechatronics Engineering, Sejong University, Seoul 05006, South Korea

article info abstract

Article history: A fascinating novelclass of double perovskites materials with interesting optoelectronic
Received 24 January 2022 and transport features have been discovered. In the current study, optoelectronics and the
Accepted 14 April 2022 transport properties of Rb2LiTlX6 (X ¼ Cl, Br) were comprehensively examined. Structure
Available online 27 April 2022 stability was confirmed by calculating tolerance factor value and Born stability criteria. At
the G-symmetry point, direct band gaps of 2.90 eV and 1.66 eV are observed, ensuring
Keywords: spectral response throughout ultra-violet to visible areas and used as potential candidates
Halide double perovskites for solar cell applications. These are excellent compounds for optoelectronic applications
DFT investigations because of their low scattering of light, refractive index range approximately from 1.5 to 2,
Direct band gap and wide absorption band in visible areas. Furthermore, thermal properties with the name
Optical properties electrical conductivity, thermal conductivity, Seebeck coefficient, power factor, and figure
Transport properties of merits of double perovskites were studied. The figure of merits (ZT) values of both
compounds are 0.43, and 0.51 at room temperature, which confirms that these materials
are suitable for use in thermal devices.
© 2022 The Author(s). Published by Elsevier B.V. This is an open access article under the CC
BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).

environment [1,2]. Photovoltaic and thermoelectric conver-


1. Introduction sion can quickly translate light and heat energy into electrical
energy from sunlight and thermal heat, which are two major
World energy consumption is rapidly increasing, and the forms of energy [3]. The selection of compounds affects the
existing accessible energy properties are primarily reliant on performance of photoelectric and thermal applications [4].
fossil fuels; those are both decreasing and unfriendly to the

* Corresponding author.
** Corresponding author.
E-mail addresses: naveedcssp@gmail.com (N.A. Noor), ahayat@ksu.edu.sa (A. Mahmood).
https://doi.org/10.1016/j.jmrt.2022.04.073
2238-7854/© 2022 The Author(s). Published by Elsevier B.V. This is an open access article under the CC BY-NC-ND license (http://
creativecommons.org/licenses/by-nc-nd/4.0/).
4776 j o u r n a l o f m a t e r i a l s r e s e a r c h a n d t e c h n o l o g y 2 0 2 2 ; 1 8 : 4 7 7 5 e4 7 8 5

The perovskites halide, with the general formula ABX3, where Rb2LiTlX6 (X ¼ Cl, Br) were determined using the FP-LAPW
A and B are cations, and X is an anion, has been extensively approach. The Perdew-Burke-Ernzerhof Generalized-
explored over the last two decades and has been revolution- Gradient approach (PBE-GGA) is also used to optimize crystal
ized due to its significant applications in the fields of photo structure for precise lattice constant representation. This
catalysis [5,6], optoelectronics [7e11], and thermoelectric approximation accurately examines crystal structure and
[12e17]. The light conversion efficiencies of lead-halide pe- lattice constant, but the bandgap values deviated from
rovskites-based solar cells have surpassed the state-of-the-art experimental values. As a result, Tran-Bhala modified Becke
copper indium gallium selenide solar cell (CIGS) and other Johnson (TB-mBJ) potential [36] was integrated, whose cor-
thin-film-based silicon tools [18,19]. Additionally, by achieving rectness is near to actual value. TB-mBJ can benefit HSE06
sustained devices with high efficiency to 20% [19,20], the due to its less computational expenses, easy usage, and
fundamental concerns about the stability of devices produced friendliness. The numerical quality of the calculations de-
with halide perovskites have been alleviated. Despite this pends on the choice of integration accuracy, k-space,
significant output, Pb would also have to be replaced with confinement, choice of basis set, and frozen cores. Out of
other environmentally acceptable and cost-effective compo- these parameters, it seems that the k-space and basis set had
nents [21]. To achieve this goal, lead-free compounds have a larger impact on the technical accuracy and computational
lately been used to examine and synthesize double perovskite time of the results. From the comparative study [36e40], we
halides [21]. Lead-free double perovskite halides were also concluded that (1) the different GGA give very similar values
explored theoretically to examine emerging applications in and all of them perform LDA in bandgap calculations. (2) Out
solar cells and thermoelectric devices [22e26]. of the different potentials (GLLBSC, KTB-mBJ, JTS-mTB-mBJ,
Researchers are interested in lithium and 'titanium-based BLYP, etc) the best results are obtained by TB-mBJ. (3) The
double perovskites halides due to their fascinating applica- HSE06 hybrid gives the best results in terms of numerical
tions in optical devices [27]. We compared with reported work accuracy. However, this accuracy comes with a substantial
against physical properties of double perovskites Cs2AgInCl6 computational cost. (4) The improvement in accuracy be-
and Cs2AgBiX6 (X ¼ Cl, Br) for confirmation in tuning the band tween HSE06 and TB-mBJ does not compensate for the large
the band gap and absorption coefficients [28,29]. Research difference in computational time for which in general we
revealed amazing results of Cs2LiBiCl6 compound in cubic would recommend using TB-mBJ as the best balance between
structure with mechanical stability by tolerance factor and accuracy and computational time.
elastic constants for optical devices stated Yanming et al. [30]. Consequence TB-mBJ approach can be communicated
J. Glodo et al. analyzed the Cs2LiYCl6 compound with the numerically as [41].
synthesized process for scintillators and thermal neutrons for pffiffiffi pffiffiffiffiffiffiffiffiffiffiffiffiffi
thermal applications [31]. The structure opto-electrons prop- 1 5 2ts ðrÞ
mBJ
Vx;s ðrÞ ¼ cVx;s
BR
ðrÞ þ ð3c  2Þ (1)
erties with band gaps of Rb2AgBiI6 in the visible region of the p 12 rs ðrÞ
spectrum were later computed by A. Bhorde et al. [32]. In The charge convergence can be computed as
addition, due to its fascinating electrical bandgap energy
 Z 12
ranges 1.310 eV, 1.152 eV, 1.180 eV and 1.169 eV and remark- 1 jVr ðrÞj
c¼a þ b d3 r (2)
able alternative for solar applications, the optical features of Vcell rðrÞ
Na2InAgCl6, K2InAgCl6, Rb2InAgCl6 and Cs2InAgCl6 are being The a ¼ -0.012 and b ¼ 1.023 Bohr ½ are computational
researched to the requisite stability [33]. Moreover, the solid constants. Because of this, we have run the computational
solution approach was used to prepare Cs2BiAgX6 (X ¼ Cl, Br) analysis by operating GGA þ TB-mBJ. The factor RMT  Kmax
with a direct band gap, resulting in lower transportation and (product of muffin-tin sphere radius and the wave vector
fault tolerance [34]. maxima), Gmax (Gaussian parameter), and Imax (angular mo-
As a result, available literature generally encourages the mentum)assigned values 8, 16, and 10 correspondingly.
use of Rb-based halides in large-scale energy development. Charge conservation has been guaranteed to 0.00001 Ry. The
Towards the best of the researcher, the electrical, optical, and Monk Horst-pack is especially crucial for convergence, and its
transport properties of the double perovskites type Rb2LiTlX6 accuracy has been modified as 20  20  20 for optical and
(X ¼ Cl, Br) compounds are still to be investigated. Using the electronic properties. Kramer-Krong relation [41] has been
TB-mBJ potential, we were able to describe electrical struc- used to investigate band gap-dependent optical properties,
tures in case of energy band gaps and total density of states and the corresponding real ε1(u), and imaginary ε2(u) compo-
and optical features in terms of dielectric constants, refrac- nents of dielectric constant are written as
tion, and absorption coefficient. For power generation, the
thermal qualities are described within Seebeck coefficient, Z∞
2 u0 ε2 ðu0 Þ 0
electrical and thermal conductivities, power factor, and figure ε1 ðuÞ ¼ 1 þ P du (3)
p u2 0  u2
of merit. 0

Z∞
eh0 X 2
ε2 ðuÞ ¼ jMcv ðkÞj d½ucv ðkÞ  ud3 k (4)
2. Methodology pm2 u2 v;c
BZ

For all calculations, a full-potential linearized augmented The refractive index and absorption coefficient were
plane wave (FP-LAPW) is used to operate Wien2k Code [35]. detailed by ε1(u) and ε2(u). In addition, the BoltzTrap code was
The electronics, optical, and transport characteristics of used to investigate the Seebeck coefficient (S), thermal
j o u r n a l o f m a t e r i a l s r e s e a r c h a n d t e c h n o l o g y 2 0 2 2 ; 1 8 : 4 7 7 5 e4 7 8 5 4777

. pffiffiffi
conductivity (k), and electrical conductivity (s) finished tG ¼ ðrRb þ rX Þ 2ðrB þ rX Þ (8)
calculated relation.
In this formula, the atomic radii of Rb and X ¼ Cl, Br, I
Z  
1 vfm ðT; εÞ atoms are presented by rRb and rX whereas, the average of the
Sab ðT; mÞ ¼ sðεÞðm  εÞ dε (5)
eTVsab ðT; mÞ vε atomic radii of Li and Tl atoms is represented by rB [42]. The
comparable value of double perovskite to the ideal value is
Z  
vfm ðT; εÞ calculated, which is mentioned in Table 1.
sab ð T; mÞ ¼ sab ðεÞ  dε (6)
vε Systematically Computations for the elastic characteristics
of Rb2LiTlX6 were conducted to understand its mechanical
Z   behavior better. The elastic constants C11, C12, and C44 of
1 vfm ðT; εÞ
kab ðT; mÞ ¼ sab ðεÞðε  mÞ2  dε (7)
e2 TV vε Rb2LiTlX6 (X ¼ Cl, Br) with the cubic structure are needed to
determine its material characteristics [43]. Table 1 presents
where transport properties are dependent on these parame-
that the elastic parameters for Rb2LiTlX6 compounds which
ters a, b, m, v, and f. The BoltzTrap.
satisfy the Born-Huang consistency criterion “C11eC12 > 0,
Codeis based on classical Boltzmann transport theory,
C11 > 0, C44 > 0, and C11 þ 2C12 > 0” [44]. To compute the elastic
which shows that the average relaxation
parameters, for instance, the Bulk's (B) and Young's (Y)
For carriers with a value of p ¼ 1014 s has been fixed.
moduli, anisotropy factor (A), and the Poisson's ratio (v).

C11 þ 2C12 9PG 3B  2G 2C44


3. Results and discussion B ¼ Y¼ v ¼ And A ¼
3 3B  G 2ð3B þ GÞ C11  C12

3.1. Structural stability and elastic properties The possibility of shape distortion of a composite can be
defined by shear modulus (G) [45]. When exposed to external
We generated structures of Rb2LiTlX6 (Cl, Br)compounds for all pressure, the substantial bulk elasticity values reflect the
calculations with space group Fm-3m (No.225) in ball-and- strength of Rb2LiTlX6 (X ¼ Cl, Br). Rb2LiTlX6 (X ¼ Cl, Br) com-
stick and also in polyhedral cubic shape (see Fig. 1). Here, pounds have reduced shear modulus of strength 1.837 GPa
purple, light-white, chocolate, and green presented Rb, Li, Tl, and 1.644 GPa, indicating less flexible flex, respectively. The
and Cl/Br atoms, respectively. Li with Tl (X6) octahedral is rigidity of a material is determined by its Young's modulus
uncoupled from 12-fold octahedral Cl/Br atoms but Rb-site [46], and products with high Young's modulus readings are
atoms got the position in the center of octahedral Cl/B. more resistant to distortion. The rigidity of the Rb2LiTlX6
Thus, there is variation in bond-length of LieCl/Br, and TleCl/ (X ¼ Cl, Br) compounds should be demonstrated by the derived
Br is demonstrated in Fig. 1 (a, b). We optimized the cubic Young's Modulus value. The toughness of Ba2InTaO6 was
structures of both compounds and also attained the optimized determined using Pugh's ratio (B/S), and components with a B/
energy (Ry) versus volume (a.u3) as illustrated in Fig. 2 (a, b). S ratio higher as compared to 1.75 are termed flexible, whereas
Moreover, we calculated the improved lattice parameters (a0) those with a B/S ratio less than 1.75 are termed inflexible
such optimized energy (E0) and bulk modulus (B0) are given in [47,48]. Its B/S ratio demonstrates the rigid character of Rb2-
Table 1. We have examined the anion size increasing because LiTlX6 (X ¼ Cl, Br)compared with less as compared to 1.75. As
B0 decreased and a0 increased by changing the Cl atom in Br indicated by the relationship Cp ¼ C12eC44, Cauchy pressure
atom during calculation. For actual life application, we must reveals the nature of bonding [49]. The deterministic systems
stabilize double perovskite Rb2LiTlX6 (Cl/Br). Therefore, we of covalent is shown by a negative number's Cauchy pressure,
used the Goldschmidt tolerance formula for confirmation of while a positive number indicates the deterministic systems
structure stability, and its formula can be written of ionic bonds. Because the Cauchy pressure of the substance

Fig. 1 e Calculated the cubic structure of Rb2LiTlX6 (X ¼ Cl, Br). Green, dark brown, white and purple spheres associated to
Rb, Li, T and X ¼ Cl/Br atoms.
4778 j o u r n a l o f m a t e r i a l s r e s e a r c h a n d t e c h n o l o g y 2 0 2 2 ; 1 8 : 4 7 7 5 e4 7 8 5

Fig. 2 e Computed the optimization as a function of volume [a.uˆ3] of Rb2LiTlX6 (X ¼ Cl, Br) compounds.

is negative, more domination with covalent is validated. Br) compounds are given in table, it is clear that it is a quasi-
Likewise to Pugh's ratio, Poisson's ratio (y) can divide crystal- solid. The pattern of atomic connection in crystal structures
lographic components into quasi-brittle categories. This is also determined by the Poisson's ratio. Poisson's ratio is
categorization has a separating line of ¼ 0.26. Rigid materials given in Table 1 for bonded structures and ideal metallic
are found below this line, while malleable materials are found crystals [51,52] and Poisson's ratio of the Rb2LiTlX6 (X ¼ Cl, Br)
above it [49,50]. As seen in Table 2, the attained values for crystals is in the region between the two extremes. As a result,
Rb2LiTlX6 (X ¼ Cl, Br) compounds. atomic interaction structures are a combination of both (metal
Consequently, Poisson's and Pugh's ratios anticipated and covalently) binding interactions.
identical outcomes for the Rb2LiTlX6 (X ¼ Cl, Br) compounds. Components with a Zener anisotropic factor of A ¼ 1 are
Poisson's ratio also determines how stable materials are ver- also termed identical [53]. The degree departure from one is
ses shearing. The smaller Poisson's ratio of the Rb2LiTlX6 used to determine the level of elastic asymmetry. The
(X ¼ Cl, Br) materials indicates that it has much resistant to anisotropy character of Rb2LiTlX6 (X ¼ Cl, Br) as the double
splitting. When a rigid structure is subjected to a core or quasi perovskite materials are supported by Table 1.
force, it remains stable. The pressure source that is account- Using the PBEsol-GGA, we developed the phonon disper-
able for a rigid material's stabilization may also be predicted sion with phonons for the cubic phase of Rb2LiTlX6 (X ¼ Cl, Br).
using Poisson's ratio. A core pressure firm is defined as a firm The ten atoms per unit cell are induced by systemic geometry,
with a Poisson's ratio in the range of 0.25e0.50 and is stabilized which involves 30 phonon modes. There are three acoustic
by core pressure. Quasi pressure helps stabilize a material bands and the others are optical bands [54]. Fig. 3 exhibits
with a Poisson's ratio beyond this limit, known as a quasi- phonon dispersion with positive frequency and phonon en-
force solid. Because each Poisson ratio for Rb2LiTlX6 (X ¼ Cl, ergies, indicating that they are thermodynamically stable. As
Br) compounds are given in the Table 1, it is clear that it is a a result, the positive frequency of the phonon modes
quasi-material. Since the Poisson ratio for Rb2LiTlX6 (X ¼ Cl, throughout the BZ confirms the cubic phase of Rb2LiTlX6
(X ¼ Cl, Br) compounds. The modes for Rb2LiTlCl6 lie in the
ranges of approximately 2.5e5 THz and 7 to 8.6 THz, respec-
 for
Table 1 e Calculated values of lattice constant ao(A) tively. Whereas Rb2LiTLBr6 in the ranges of about 2e3.3 THz
compared with existing work, Bulk modulus Bo(GPa), and 5.9 to 8.3 THz has modest dispersion, indicating weak
Tolerance factor (tG) and elastic parameters of Rb2LiTlCl6 atom contact. Despite the fact that most theoretical work on
and Rb2LiTlBr6. lattice vibrational dynamics overvalues the force constant and
Parameters Rb2LiTlCl6 Rb2LiTlBr6 fails to calculate the numerous crucial aspects of dispersion
PBEsol-GGA PBEsol-GGA curves [55]. As a result, we observed the double perovskites
ao(
A) 10.26 10.85 Rb2LiTlX6 (X ¼ Cl, Br) are stable due to having a positive
Other work 10.45a 11.08a frequency.
Bo (GPa) 31.41 26.91
tG 0.90 0.88
C11 61.09 49.75
C12 21.80 17.63 Table 2 e Calculated direct bandgap Eg (eV) values with
C44 9.55 11.01 mBJ potential and optical parameters at 0 energy of
B 34.89 28.33 Rb2LiTlCl6 and Rb2LiTlBr6 compounds.
G 12.80 12.81 Parameters Rb2LiTlCl6 Rb2LiTlBr6
Y 4.21 33.40
Our work
B/G 2.73 2.21
Eg (eV) 2.90 1.66
y 0.34 0.30
ε1 (0) 2.41 3.10
A 0.48 0.68
n (0) 1.75 1.51
a
Ref. [60]. R (0) 0.05 0.08
j o u r n a l o f m a t e r i a l s r e s e a r c h a n d t e c h n o l o g y 2 0 2 2 ; 1 8 : 4 7 7 5 e4 7 8 5 4779

Fig. 3 e We computed the phonon dispersion for double perovskites Rb2LiTlCl6 and Rb2LiTlBr6.

3.2. Opto-electronic properties comes from Rb-5s1, Cl-3p5, and Br-4p5 in the valence band.
When electrons gain energy from an external source, elec-
We considered the electronic band structure and total density trons jump from valence to conduction. The comparison of
of states to check bandgap and contribution's electrons in a states demonstrates that the highest transitions of electrons
different orbital. Both compounds Rb2LiTlX6 (X ¼ Cl, Br) have are conceivable from Tl states to Cl and Br states, but Rb states
direct bandgap values of 2.90 eV and 1.66 eV, respectively. The have less participation, and almost there is no contribution to
calculated value of band-gap 2.90/1.66 eV of Rb2LiTiCl/Br6 the transition and recombination procedure.
advocated the highest absorption in the visible spectrum. We To better understand opto-electronic properties for use in
examined the direct band at G-symmetric k-point for both optoelectronics devices, we computed the optical properties
compounds as shown in Fig. 4 (a, b). The valence band has using Krammer-Krong equations. The computed direct band
plenty of states that started from -1.98eV to 0 eV, but in the gaps of Rb2LiTlX6 (X ¼ Cl, Br) are 2.90 eV and 1.6 eV,res-
conduction band, there are minor states at approximately pectively, indicating that both compounds are optically active
3.95 eV. Thus, this thing advocated that the material behavior material and play a vital role in the field ofoptoelectronic de-
is p-type because the number of holes in the valence band is vices. The optical uses are explored by the complex dielectric
higher than an electron. To deeply understand electronic constant, refractive index, and absorption coefficient. We
contribution, we added the total density of states (TDOS) along calculated the real and imaginary parts of the complex
with the band structure plot. The electronic configuration of dielectric function as a function of photon energy (eV) (see
Rb, Li, Tl, Cl and Br atoms are Rb [Kr] 5s1, Li [Ar] 1s22s1,Tl [Ar] Fig. 6 a, b). As a literature, the real part ε1(u) exhibits the po-
5 d10 6s2,6p1Cl [Ne] 3s2 3p5 and Br [Ar] 4s2 3 d10 4p5, respec- larization, but the imaginary part ε2(u) demonstrates absorp-
tively. To understand the total density of states, we have tion of light on any materials. We found the highest dispersion
calculated the Partial density of states (PDOS) for both com- of light in real dielectric function at resonance frequency with
pounds Rb2LiTlX6 (X ¼ Cl, Br) as shown in Fig. 5 (a-b). We found an energy range of 2.9 eV and 1.6 eV for both computed
overall there is the maximum contribution of Cl and Br ele- compounds. It falls toward the minimum values for both
ments when compared the maximum contribution then Cl compounds at 4.0eV and 3.2 eV, then an increase in ε1(u) has
beat the Br element. There is maximum participation of cl and been started. By replacing Cl with Br in double perovskite, the
Br elements near Fermi level in valence band from approxi- static dielectric constant ε1 (0) raises from 2.45 to 3.15 and
mately -2.5 eVe0 eV.We can easily examine the participation exhibits an inversely proportional band gap, which aligns with
of electrons by electronic configuration; more participation Penn's model [56].

Fig. 4 e Electronic structures along with total density of states (TDOS) (a) Rb2LiTiCl6 and (b) Rb2LiTiBr6 compounds.
4780 j o u r n a l o f m a t e r i a l s r e s e a r c h a n d t e c h n o l o g y 2 0 2 2 ; 1 8 : 4 7 7 5 e4 7 8 5

Fig. 5 e Partial density of states (TDOS) (a) Rb2LiTiCl6 and (b) Rb2LiTiBr6 compounds.

 2
hup
ε1 ð0Þ z 1 þ (9) Rb2LiTICl6(2.90 eV) is quite higher than Rb2LiTlBr6 (1.66 eV).
Eg
Thus, we can say that Rb2LiTiX6 absorbs electromagnetic ra-
The Krammer-Krong revolution [56,57]is applied to attain diations starting from visible spectra.
second imaginary dielectric ε2(u) from ε1 (u). The ε2(u) for The refractive index n(u) measures a material's quality
Rb2LiTlX6 (X ¼ Cl, Br) is illustrated in Fig. 6b. Bandgap values regarding semiconductors. The computed values of n(u),
(2.90 eV and 1.66 eV) were justified by calculating the which has similar behavior to ε1(u) are presented in Fig. 6c.
threshold values, which are nearly equal to the reported The static energy of refractive indices n (0) is given in Table 2
values [58]. A little overestimation in the optical band gap for both Rb2LiTlX6 (X ¼ Cl, Br) via relation of n2 (0) ¼ ε1(u).
happens in optical properties because of associated potentials According to the comparison point of view, the Rb2LiTiBr6
during calculations. Furthermore, the optical band gap of compound has a high refractive index as compared to the

Fig. 6 e Calculated (a) real part of ε1(u), (b) imaginary partε2 (u), (c) refractive index n(u), and (d) k(u) of Rb2LiTlCl6 and
Rb2LiTlBr6 compounds.
j o u r n a l o f m a t e r i a l s r e s e a r c h a n d t e c h n o l o g y 2 0 2 2 ; 1 8 : 4 7 7 5 e4 7 8 5 4781

Rb2LiTiCl6 compound, that thing advocates Rb2LiTiBr6 is a energy (eV), reflectivity increased with fluctuation because
good candidate for good optoelectronics applications. The electrons gained energy variations. We attained the
maximum extinction coefficients for both compounds are maximum reflectivity 0.14 and 0.15 at 4.5 eV and 5.5 eV for
observed in visible spectra, as seen in Fig. 6d. The zero both compounds, respectively.
extinction coefficient is zero while increasing the photon en- Fig. 7d displays the energy loss verses photon energy (eV).
ergy (eV). This linearly decreased toward the negative values, Static points of energy loss are 0, while energy loss starts from
and from the 3.1eV, material started fluctuating until 12 eV. 2 eV for Rb2LiTlBr6 compound and 3 eV for Rb2LiTiCl6 com-
Here, we also calculated the absorption coefficient, con- pound. We can efficiently examine that the energy loss in-
ductivity, reflectivity, and energy loss to explore the material creases as we increase the energy along the X-axis.
nature from an optical point of view (see Fig. 7a-d). The
considered compounds are crystallized in a cubic structure, 3.3. Transport properties
and a complex dielectric constant is projected using disper-
sion band theory [59]. The absorption coefficient specifies how We investigated the thermal properties of Rb2LiTlX6 (X ¼ Cl,
far the light with a particular wavelength can influence ma- Br) by using the classical Boltzmann transport theory,which
terials before being absorbed. Critical points of all parameters executed in BoltzTrap code as a function of temperature from
are given in Table 2. We observed that Cl atom-based com- 300 K to 1200 K. We calculated the Seebeck coefficient, elec-
pound has started the absorption from 3.1 eV and Br based trical conductivity, and also power factor as seen in Fig. 8a-
compound from almost 2 eV, but overall Rb2LiTlCl6 compound c.We have computed the thermal conductivity properties
has low absorption compared to Rb2LiTlBr6 due to large band having the electron and lattice conductivity with constant
as seen in Fig. 7a. Similarly, optical conductivity started with relaxation time for the Rb2LiTlX6 (X ¼ Cl, Br) compound (see
approximately the same values as absorption coefficient Fig. 9a-c). The magnitude of change in potential (DV) associ-
because in optoelectronic cases there are directly proportional ated with changing in temperature (DT) is measured between
to each other (see Fig. 7b). Fig. 7c demonstrates the reflectivity two different metals contacts. We can examine the material
of Rb2LiTlX6 (X ¼ Cl, Br) as function of photon energy (eV). nature by positive and negative values of the Seebeck coeffi-
Initially, there are 0.04 and 0.07 due to few free electrons in cient. If the Seebeck coefficient is positive, then the material is
materials at static points. Further, by increasing the photon n-type. Otherwise,the material is p-type. Therefore, we can

Fig. 7 e Calculated (a) absorption coefficient a(u), (b) electrical conductivity s(u), (c) reflectivity R(u) and (d) L(u) of Rb2LiTlCl6
and Rb2LiTlBr6 compounds.
4782 j o u r n a l o f m a t e r i a l s r e s e a r c h a n d t e c h n o l o g y 2 0 2 2 ; 1 8 : 4 7 7 5 e4 7 8 5

Fig. 8 e Calculated (a) Seebeck, (b) electrical conductivity


and (c) power factor as a function of T(K) of Rb2LiTlCl6 and Fig. 9 e Calculated the thermal conductivity of electronic
Rb2LiTlBr6. (ke) as well as lattice (kL) for (a) Rb2LiTlCl6, (b) Rb2LiTlBr6and
(c) figure of merits (ZT) against temperature (k) for
Rb2LiTlX6 (X ¼ Cl, Br) compound.
say these given materials are n-type semiconductors. Seebeck
coefficient has minimum due to low conductivity in Rb2LiTlCl6
compound compared to Rb2LiTlBr6 (see Fig. 8a). highest kinetic energy (eV). Overall, Rb2LiTlCl6 compound has
Rb2LiTlX6 (X ¼ Cl, Br) of electrical conductivity plot is high electrical conductivity due to less contaminations and
computed versus temperature as presented in Fig. 8 (b). It in- collision; high mean free path and time.
forms us how much electrons transfer from valance to con- The power factor defined as PF ¼ sS2 whose difference as a
duction band for electrical conductivity. First electrical function of temperature for Rb2LiTlX6 (X ¼ Cl, Br) is exposed in
conductivity value examined at 300 K are 6.5 1017U (m.s)1 and Fig. 8c. By increasing the temperature up to room temperature
5.0 1017U (m.s)1 and second observed values are 22.0 1017U power factor also increased with values 0.2  1017 (W/mk2) at
(m.s)1 and 17.5 1017U (m.s)1at 1200 for Rb2LiTlX6 (X ¼ Cl, Br) 300 K for Rb2LiTiCl6 and 0.2  1017 (W/mk2) for Rb2LiTiBr6. At
respectively. At the highest temperature, we attained the 1200 it increased approximately 0.66  1017 (W/mk2) and
maximum electrical conductivity values because we have the 0.65  1017 (W/mk2) for Rb2LiTlX6. Therefore, PF's increasing
j o u r n a l o f m a t e r i a l s r e s e a r c h a n d t e c h n o l o g y 2 0 2 2 ; 1 8 : 4 7 7 5 e4 7 8 5 4783

rate of the two compounds is the same at low temperature, electrical conductivity in range of 0.2  1015 (W/m.K),
but at a high temperature, the decreasing rate is lower for 0.18  1015 (W/m.K), 6.5 1017U (m.s)1and 5.0 1017U (m.s)1 at
Rb2LiTl6 then Rb2LiTiCl6, which indicates two materials may room temperature. Furthermore, at 300 K, the ZT values for
find opportunity in thermoelectric applications at low both compounds are 0.43 and 0.51, respectively increasing by
temperatures. replacing the element. As a result, Rb2LiTlBr6 has a higher
There are two methods for secure thermal conductivity; absorptions range and a higher ZT at visible region and room
electrons mode and phonons mode, denoted K ¼ Ke þ Kph. Ke temperature, indicating that it promises photovoltaic, ther-
is electron vibration and Kph is phonon vibration in thermal moelectric heating and cooling applications.
conductivity, respectively. Fig. 9 (a) represented the thermal
conductivity for Rb2LiTlCl6 and 9(b) represented the thermal
conductivity for the Rb2LiTlBr6 compound. Black and red lines Declaration of Competing Interest
are for lattice and electron conductivity which are straight by
increasing the temperature, the blue line presenting the total The authors declare that they have no known competing
thermal conductivity of the Rb2LiTlCl6 compound. Similarly, financial interests or personal relationships that could have
Black and red lines are for lattice and electron conductivity in appeared to influence the work reported in this paper.
which the black line is straight by increasing the temperature
but the red line has not straight by enhancing the tempera-
ture. Here, the blue line presents the total thermal conduc-
Acknowledgment
tivity of the Rb2LiTlBr6 compound which is gradually
increasing by surging the temperature. We observed the first
The authors would like to acknowledge Researcher's Sup-
vale of thermal conductivity at room temperature (300 K)
porting Project Number (RSP-2022R511), King Saud University,
0.20  1015 (W/m.K) and 0.18  1015 (W/m.K) for both com-
Riyadh, Saudi Arabia.
pounds correspondingly. The second highest values at 1200 K
are 1.2  1015 (W/m.K) and 1.1  1015 (W/m.K), which linearly
increased by increasing the temperature from room temper- references
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