C2M0045170P

Silicon Carbide Power MOSFET

C2MTM MOSFET Technology
N-Channel Enhancement Mode

Features Package

• 2nd generation SiC MOSFET technology

• Optimized package with separate driver source pin Tab

•
Drain
8mm of creepage distance between drain and source
• High blocking voltage with low On-Resistance
• High speed switching with low capacitances
• Resistant to latch-up
• Halogen Free, RoHS Compliant

Benefits
1 2 3 4
D S S G

• Reduce switching losses and minimize gate ringing

• Higher system efficiency
• Reduce cooling requirements
• Increase power density
• Increase system switching frequency

Applications

• Solar inverters
• Switch Mode Power Supplies Part Number Package Marking
• High voltage DC/DC converters
• Motor drive C2M0045170P TO-247-4L C2M0045170P
• Pulsed power applications

Maximum Ratings (TC = 25 ˚C unless otherwise specified)

Symbol Parameter Value Unit Test Conditions Note

VDSmax Drain - Source Voltage 1700 V VGS = 0 V, ID = 100 μA

VGSmax Gate - Source Voltage -10/+25 V Absolute maximum values, AC (f >1 Hz) Note: 1

VGSop Gate - Source Voltage -5/+20 V Recommended operational values Note: 2

75 VGS =20 V, TC = 25˚C Fig. 19

ID Continuous Drain Current A
48 VGS =20 V, TC = 100˚C

ID(pulse) Pulsed Drain Current 160 A Pulse width tP limited by Tjmax Fig. 22

PD Power Dissipation 338 W TC=25˚C, TJ = 150 ˚C Fig. 20

-40 to
TJ , Tstg Operating Junction and Storage Temperature
+150
˚C

TL Solder Temperature 260 ˚C 1.6mm (0.063”) from case for 10s

Note (1): When using MOSFET Body Diode VGSmax = -5V/+25V

Note (2): MOSFET can also safely operate at 0/+20V

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Rev. 2, May 2022 Wolfspeed logo is a trademark of Wolfspeed, Inc. PATENT: https://www.wolfspeed.com/legal/patents
The information in this document is subject to change without notice.
 C2M0045170P 2

Electrical Characteristics (TC = 25˚C unless otherwise specified)

Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V(BR)DSS Drain-Source Breakdown Voltage 1700 V VGS = 0 V, ID = 100 μA
2.0 3.0 4 V VDS = VGS, ID = 18mA
VGS(th) Gate Threshold Voltage Fig. 11
2.5 V VDS = VGS, ID = 18mA, TJ = 150 °C
IDSS Zero Gate Voltage Drain Current 2 100 μA VDS = 1700 V, VGS = 0 V
IGSS Gate-Source Leakage Current 600 nA VGS = 20 V, VDS = 0 V
40 70 VGS = 20 V, ID = 50 A Fig.
RDS(on) Drain-Source On-State Resistance mΩ
80 VGS = 20 V, ID = 50 A, TJ = 150 °C 4,5,6

24.7 VDS= 20 V, IDS= 50 A

gfs Transconductance S Fig. 7
23.4 VDS= 20 V, IDS= 50 A, TJ = 150 °C
Ciss Input Capacitance 3455
VGS = 0 V
Fig.
Coss Output Capacitance 171 pF
VDS = 1200 V 17,18
Crss Reverse Transfer Capacitance 6.7 f = 1 MHz
Eoss Coss Stored Energy 139 μJ VAC = 25 mV Fig 16

Effective Output Capacitance

Co(er) 188 pF
(Energy Related)
VGS = 0 V, VDS = 0... 1200V Note: 3
Co(tr) Effective Output Capacitance (Time Related) 255 pF

EON Turn-On Switching Energy (SiC Diode FWD) 0.52 VDS = 1200 V, VGS = -5/20 V, Fig. 26,
mJ ID = 50A, RG(ext) = 2.5Ω, L= 99 μH, 29b
EOFF Turn Off Switching Energy (SiC Diode FWD) 0.43 TJ = 150 °C, using SiC Diode as FWD Note 2

EON Turn-On Switching Energy (Body Diode FWD) 2.0 VDS = 1200 V, VGS = -5/20 V, Fig. 26,
mJ ID = 50A, RG(ext) = 2.5Ω, L= 99 μH, 29a
EOFF Turn Off Switching Energy (Body Diode FWD) 0.31 TJ = 150 °C, using MOSFET as FWD Note 2

td(on) Turn-On Delay Time 15

VDD = 1200 V, VGS = -5/20 V
tr Rise Time 18 ID = 50 A, Fig. 27,
ns RG(ext) = 2.5 Ω, Timing relative to VDS 29
td(off) Turn-Off Delay Time 34 Inductive load Note 2

tf Fall Time 12

RG(int) Internal Gate Resistance 1.3 Ω f = 1 MHz, VAC = 25 mV

Qgs Gate to Source Charge 46

VDS = 1200 V, VGS = -5/20 V
Qgd Gate to Drain Charge 71 nC ID = 50 A Fig. 12
Per IEC60747-8-4 pg 21
Qg Total Gate Charge 204

Note (3): C , a lumped capacitance that gives same stored energy as Coss while Vds is rising from 0 to 1200V
o(er)

Co(tr), a lumped capacitance that gives same charging time as Coss while Vds is rising from 0 to 1200V

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Rev. 2, May 2022 Wolfspeed logo is a trademark of Wolfspeed, Inc. PATENT: https://www.wolfspeed.com/legal/patents
The information in this document is subject to change without notice.
 C2M0045170P 3

Reverse Diode Characteristics

Symbol Parameter Typ. Max. Unit Test Conditions Note
3.8 V VGS = - 5 V, ISD = 25 A Fig. 8, 9,
VSD Diode Forward Voltage 10
3.4 V VGS = - 5 V, ISD = 25 A, TJ = 150 °C Note 1

IS Continuous Diode Forward Current 76 A VGS = - 5 V, TC= 25 °C Note 1

IS, pulse Diode pulse Current 160 A VGS = - 5 V, pulse width tP limited by Tjmax Note 1

trr Reverse Recovery Time 44 ns

VGS = - 5 V, ISD = 50 A , VR = 1200 V
Qrr Reverse Recovery Charge 1.9 uC
dif/dt = 3000 A/µs, TJ = 150 °C
Irrm Peak Reverse Recovery Current 64 A

trr Reverse Recovery Time 25 ns

VGS = - 5 V, ISD = 50 A , VR = 1200 V
Qrr Reverse Recovery Charge 2.4 uC
dif/dt = 13450 A/µs, TJ = 150 °C
Irrm Peak Reverse Recovery Current 166 A

Thermal Characteristics

Symbol Parameter Typ. Max. Unit Test Conditions Note

RθJC Thermal Resistance from Junction to Case 0.22 0.37 Fig. 21
°C/W
RθJC Thermal Resistance from Junction to Ambient 40

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 C2M0045170P 4

Typical Performance

150 150
Conditions: Conditions: VGS = 20V
VGS = 20V VGS = 14V
Tj = -40 °C Tj = 25 °C
VGS = 14V VGS = 18V
tp = < 200 µs tp = < 200 µs
125 VGS = 18V 125
Drain-Source Current, IDS (A)

Drain-Source Current, IDS (A)

VGS = 16V
VGS = 16V VGS = 12V
100 100
VGS = 12V

75 75
VGS = 10V

50 50
VGS = 10V

25 25

0 0
0.0 2.0 4.0 6.0 8.0 10.0 12.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0
Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V)

Figure 1. Output Characteristics TJ = -40 °C Figure 2. Output Characteristics TJ = 25 °C

150 2.5
Conditions: Conditions:
Tj = 150 °C IDS = 50 A
125 tp = < 200 µs VGS = 20 V
VGS = 20V 2.0 tp < 200 µs
VGS = 18V
Drain-Source Current, IDS (A)

On Resistance, RDS On (P.U.)

100 VGS = 16V

VGS = 12V
1.5
VGS = 14V
75
VGS = 10V

1.0
50

0.5
25

0 0.0
0.0 2.0 4.0 6.0 8.0 10.0 12.0 -50 -25 0 25 50 75 100 125 150
Drain-Source Voltage, VDS (V) Junction Temperature, Tj (°C)

Figure 3. Output Characteristics TJ = 150 °C Figure 4. Normalized On-Resistance vs. Temperature

120 100
Conditions: Conditions:
VGS = 20 V IDS = 50 A
tp < 200 µs tp < 200 µs
100
80
Tj = 150 °C
On Resistance, RDS On (mOhms)

On Resistance, RDS On (mOhms)

80
60 VGS = 14 V

60

Tj = 25 °C 40
40 VGS = 16 V
VGS = 18 V
Tj = -40 °C VGS = 20 V
20
20

0 0
0 20 40 60 80 100 120 140 -50 -25 0 25 50 75 100 125 150
Drain-Source Current, IDS (A) Junction Temperature, Tj (°C)

Figure 5. On-Resistance vs. Drain Current Figure 6. On-Resistance vs. Temperature

For Various Temperatures For Various Gate Voltage

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 C2M0045170P 5

Typical Performance

125 -7 -6 -5 -4 -3 -2 -1 0
Conditions:
VDS = 20 V
tp < 200 µs -10
100 VGS = -5 V

Drain-Source Current, IDS (A)

Drain-Source Current, IDS (A)

-30
TJ = 150 °C VGS = 0 V

75 -50
TJ = 25 °C VGS = -2 V

TJ = -40 °C -70
50
-90

25 -110

Conditions: -130
0 Tj = -40°C
tp < 200 µs
0 2 4 6 8 10 12 14
-150
Gate-Source Voltage, VGS (V) Drain-Source Voltage VDS (V)

Figure 7. Transfer Characteristic For

Figure 8. Body Diode Characteristic at -40 ºC
Various Junction Temperatures
-7 -6 -5 -4 -3 -2 -1 0 -7 -6 -5 -4 -3 -2 -1 0

-10 -10
VGS = -5 V
Drain-Source Current, IDS (A)

Drain-Source Current, IDS (A)

VGS = -5 V
-30 -30
VGS = 0 V VGS = 0 V

-50 -50
VGS = -2 V VGS = -2 V
-70 -70

-90 -90

-110 -110

Conditions: -130 Conditions: -130

Tj = 25°C Tj = 150°C
tp < 200 µs tp < 200 µs
-150 -150
Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V)

Figure 9. Body Diode Characteristic at 25 ºC Figure 10. Body Diode Characteristic at 150 ºC

4.0 20
Conditons Conditions:
VGS = VDS IDS = 50 A
3.5
IDS = 18 mA IGS = 50 mA
15 VDS = 1200 V
3.0 TJ = 25 °C
Gate-Source Voltage, VGS (V)
Threshold Voltage, Vth (V)

2.5
10
2.0

1.5 5

1.0
0
0.5

0.0 -5
-50 -25 0 25 50 75 100 125 150 0 20 40 60 80 100 120 140 160 180 200 220
Junction Temperature TJ (°C) Gate Charge, QG (nC)

Figure 11. Threshold Voltage vs. Temperature Figure 12. Gate Charge Characteristic

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Rev. 2, May 2022 Wolfspeed logo is a trademark of Wolfspeed, Inc. PATENT: https://www.wolfspeed.com/legal/patents
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 C2M0045170P 6

Typical Performance

-7 -6 -5 -4 -3 -2 -1 0 -7 -6 -5 -4 -3 -2 -1 0

-10 -10
VGS = 0 V
VGS = 5 V
Drain-Source Current, IDS (A)

Drain-Source Current, IDS (A)

VGS = 0 V VGS = 5 V
-30 -30

-50 -50
VGS = 10 V
VGS = 10 V
-70 -70
VGS = 15 V
VGS = 15 V
-90 VGS = 20 V -90
VGS = 20 V

-110 -110

Conditions: -130 Conditions: -130

Tj = -40 °C Tj = 25 °C
tp < 200 µs tp < 200 µs
-150 -150
Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V)

Figure 13. 3rd Quadrant Characteristic at -40 ºC Figure 14. 3rd Quadrant Characteristic at 25 ºC

-6 -5 -4 -3 -2 -1 0 300

-10
VGS = 0 V 250

-30
VGS = 5 V
Drain-Source Current, IDS (A)

Stored Energy, EOSS (µJ)

200
VGS = 10 V
-50
VGS = 15 V
150
VGS = 20 V -70

-90 100

-110
50

Conditions: -130
Tj = 150 °C 0
tp < 200 µs
-150 0 500 1000 1500 2000
Drain-Source Voltage VDS (V) Drain to Source Voltage, VDS (V)

Figure 15. 3rd Quadrant Characteristic at 150 ºC Figure 16. Output Capacitor Stored Energy

10000 10000
Conditions: Conditions:
TJ = 25 °C TJ = 25 °C
Ciss VAC = 25 mV Ciss VAC = 25 mV
f = 1 MHz f = 1 MHz
1000 1000
Capacitance (pF)

Capacitance (pF)

Coss

Coss
100 100

Crss

10 10 Crss

1 1
0 50 100 150 200 0 200 400 600 800 1000
Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V)

Figure 17. Capacitances vs. Drain-Source Figure 18. Capacitances vs. Drain-Source
Voltage (0-200 V) Voltage (0-1000 V)

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The information in this document is subject to change without notice.
 C2M0045170P 7

Typical Performance

80 350
Conditions: Conditions:
TJ ≤ 150 °C TJ ≤ 150 °C
Drain-Source Continuous Current, IDS (DC) (A)

70
300

Maximum Dissipated Power, Ptot (W)

60
250
50
200
40
150
30

100
20

10 50

0 0
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
Case Temperature, TC (°C) Case Temperature, TC (°C)

Figure 19. Continuous Drain Current Derating vs. Figure 20. Maximum Power Dissipation Derating vs.
Case Temperature Case Temperature

100
Junction To Case Impedance, ZthJC (oC/W)

0.5
Limited by RDS On 1 µs
100E-3
0.3
Drain-Source Current, IDS (A)

10 µs
10
100 µs
0.1

1 ms
0.05 1
10E-3
0.02 100 ms

0.01
0.1
Conditions:
TC = 25 °C
D = 0,
SinglePulse Parameter: tp
0.01
1E-3
0.1 1 10 100 1000
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1
Time, tp (s) Drain-Source Voltage, VDS (V)

Figure 21. Transient Thermal Impedance

Figure 22. Safe Operating Area
(Junction - Case)
1.8 3.0
Conditions: Conditions:
TJ = 25 °C ETotal TJ = 25 °C
VDD = 900 V VDD = 1200 V ETotal
1.5 RG(ext) = 2.5 Ω 2.5 RG(ext) = 2.5 Ω
VGS = -5/+20 V VGS = -5/+20 V
FWD = C2M0045170P FWD = C2M0045170P
1.2 L = 99 μH 2.0 L = 99 μH
Switching Loss (mJ)

Switching Loss (mJ)

EOn
EOn
0.9 1.5

0.6 EOff 1.0

EOff

0.3 0.5

0.0 0.0
0 20 40 60 80 100 120 0 20 40 60 80 100 120
Drain to Source Current, IDS (A) Drain to Source Current, IDS (A)

Figure 23. Clamped Inductive Switching Energy vs. Figure 24. Clamped Inductive Switching Energy vs.
Drain Current (VDD = 900V) Drain Current (VDD = 1200V)

© 2022 Wolfspeed, Inc. All rights reserved. Wolfspeed® and the Wolfstreak logo are registered trademarks and the
Rev. 2, May 2022 Wolfspeed logo is a trademark of Wolfspeed, Inc. PATENT: https://www.wolfspeed.com/legal/patents
The information in this document is subject to change without notice.
 C2M0045170P 8

Typical Performance

6 3.5
Conditions: Conditions:
TJ = 25 °C IDS = 50 A
VDD = 1200 V 3.0 VDD = 1200 V
5 RG(ext) = 2.5 Ω
IDS = 50 A
ETotal VGS = -5/+20 V
VGS = -5/+20 V
FWD = C2M0045170P 2.5 L = 99 μH
4 L = 99 μH FWD = C2M0045170P ETotal
FWD = C3D25170
Switching Loss (mJ)

Switching Loss (mJ)

2.0 EOn
3
EOn
1.5

2 EOff ETotal with Schottky

1.0

EOn with Schottky

1
0.5 EOff with Schottky
EOff
0 0.0
0 5 10 15 20 25 0 25 50 75 100 125 150 175
External Gate Resistor RG(ext) (Ohms) Junction Temperature, TJ (°C)

Figure 26. Clamped Inductive Switching Energy vs.

Figure 25. Clamped Inductive Switching Energy vs. RG(ext)
Temperature
150
Conditions: td(off)
TJ = 25 °C
VDD = 1200 V
125 IDS = 50 A
VGS = -5/+20 V
FWD = C2M0045170P
Switching Times (ns)

100

75
td(on)

50 tr

tf
25

0
0 5 10 15 20 25
External Gate Resistor RG(ext) (Ohms)

Figure 27. Switching Times vs. RG(ext) Figure 28. Switching Times Definition

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Rev. 2, May 2022 Wolfspeed logo is a trademark of Wolfspeed, Inc. PATENT: https://www.wolfspeed.com/legal/patents
The information in this document is subject to change without notice.
 C2M0045170P 9

Test Circuit Schematic

Q1
RG

C2M0045170D
VGS= - 5V
VDC

Q2
RG
C2M0045170D
D.U.T

Figure 29a. Clamped Inductive Switching Test Circuit using

MOSFET intristic body diode

D1 C3D25170H
25A, 1700V
SiC Schottky

VDC

Q2
RG
D.U.T
C2M0045170D

Figure 29b. Clamped Inductive Switching Test Circuit using

SiC Schottky diode

© 2022 Wolfspeed, Inc. All rights reserved. Wolfspeed® and the Wolfstreak logo are registered trademarks and the
Rev. 2, May 2022 Wolfspeed logo is a trademark of Wolfspeed, Inc. PATENT: https://www.wolfspeed.com/legal/patents
The information in this document is subject to change without notice.
 OUTLINE
C2M0045170P NOTE ; 10
1. ALL METAL SURFACES: TIN PLATED,EXCE
2. DIMENSIONING & TOLERANCEING CONFIR
Package Dimensions ASME Y14.5M-1994.
DWG NO. 98W0004TO005
3. ALL DIMENSIONS ARE IN MILLIMETERS.
PACKAGE
ASE ANGLES ARE IN DEGREES.
Advanced
Semiconductor
ISSUE C
Engineering Weihai, Inc.
OUTLINE 4. 'N' IS THE NUMBER OF TERMINAL POSITIO
DATE Feb.07, 2020

E MILLIMETERS
SYM
E1 MIN MAX
E3 E4
A 4.83 5.21
A1 2.29 2.54
A2 1.91 2.16
b' 1.07 1.28
b 1.07 1.33
b1 2.39 2.94
b2 2.39 2.84
b3 1.07 1.60
b4 1.07 1.50
b5 2.39 2.69
b6 2.39 2.64
b7 1.30 1.70
c' 0.55 0.65
c 0.55 0.68
D 23.30 23.60
D1 16.25 17.65
D2 0.95 1.25
E 15.75 16.13
E1 13.10 14.15
BASE METAL E2 3.68 5.10
E3 1.00 1.90
E4 12.38 13.43
e 2.54 BSC
e1 5.08 BSC
N* 4
SECTION "F-F", "G-G" , "H-H" & "J-J"
SCALE: NONE
L 17.31 17.82
L1 3.97 4.37
TITLE: COMPANY ASE Weihai L2 2.35 2.65
TO-247 Plus 4 LD
SHEET 1 OF 3 Q 5.49 6.00
T 17.5 REF.
W 3.5 REF.
X 4 REF.

Recommended Solder Pad Layout TITLE:

TO-247 Plus 4LD

© 2022 Wolfspeed, Inc. All rights reserved. Wolfspeed® and the Wolfstreak logo are registered trademarks and the
Rev. 2, May 2022 Wolfspeed logo is a trademark of Wolfspeed, Inc. PATENT: https://www.wolfspeed.com/legal/patents
The information in this document is subject to change without notice.
 C2M0045170P 11

Revision history

Document Version Date of release Descriptiion of changes

Rev - April - 2018 Initial datasheet

Rev 1 NA Revision 1 not released.

Rev 2 May - 2022 Added effective output capacitance,

Typical values updated to support PCN-1278.

© 2022 Wolfspeed, Inc. All rights reserved. Wolfspeed® and the Wolfstreak logo are registered trademarks and the
Rev. 2, May 2022 Wolfspeed logo is a trademark of Wolfspeed, Inc. PATENT: https://www.wolfspeed.com/legal/patents
The information in this document is subject to change without notice.
 C2M0045170P 12

Note:

This document and the information contained herein are subject to change without notice. Any such change shall be evidenced by the publication of an
updated version of this document by Wolfspeed. No communication from any employee or agent of Wolfspeed or any third party shall effect an amendment
or modification of this document. No responsibility is assumed by Wolfspeed for any infringement of patents or other rights of third parties which may
result from use of the information contained herein. No license is granted by implication or otherwise under any patent or patent rights of Wolfspeed.

Not withstanding any application-specific information, guidance, assistance, or support that Wolfspeed may provide, the buyer of this product
is solely responsible for determining the suitability of this product for the buyer’s purposes, including without limitation for use in the applications
identified in the next bullet point, and for the compliance of the buyers’ products, including those that incorporate this product, with all applicable
legal, regulatory, and safety-related requirements. .

This product has not been designed or tested for use in, and is not intended for use in, applications in which failure of the product would reasonably
be expected to cause death, personal injury, or property damage, including but not limited to equipment implanted into the human body, life-support
machines, cardiac defibrillators, and similar emergency medical equipment, aircraft navigation, communication, and control systems, aircraft power
and propulsion systems, air traffic control systems, and equipment used in the planning, construction, maintenance, or operation of nuclear facilities.

RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for
such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS
Declarations for this product can be obtained from your Wolfspeed representative or from the Product Documentation sections of www.Wolfspeed.com.

REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published
notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact your Wolfspeed representative to ensure you
get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.

For more information please contact:

4600 Silicon Drive Durham, NC 27703 USA
Tel: +1.919.313.5300
www.wolfspeed.com/power

© 2022 Wolfspeed, Inc. All rights reserved. Wolfspeed® and the Wolfstreak logo are registered trademarks and the
Rev. 2, May 2022 Wolfspeed logo is a trademark of Wolfspeed, Inc. PATENT: https://www.wolfspeed.com/legal/patents
The information in this document is subject to change without notice.