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TECHNOLOGICAL UNIVERSITY OF THE PHILIPPINES VISAYAS

Capt. Sabi St., City of Talisay, Negros Occidental

College of Electrical Engineering Technology

Office of the Program Coordinator

LEARNING MODULE

Subject Code: ELEX 132

BASIC ELECTRONICS

DEPARTMENT: Electrical Engineering Technology

COMPILED BY:

Leonilyn Pacite

2021

This module is a property of Technological University of the Philippines Visayas and intended
for EDUCATIONAL PURPOSES ONLY and is NOT FOR SALE NOR FOR REPRODUCTION.
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VISION

The Technological University of the Philippines shall be the premier state university
with recognized excellence in engineering and technology at par with leading universities in
the ASEAN region.

MISSION

The University shall provide higher and advanced vocational, technical, industrial,
technological and professional education and training in industries and technology, and in
practical arts leading to certificates, diplomas and degrees.
It shall provide progressive leadership in applied research, developmental studies in
technical, industrial, and technological fields and production using indigenous materials; effect
technology transfer in the countryside; and assist in the development of s mall-and-medium
scale industries in identified growth center. (Reference: P.D. No. 1518, Section 2)

QUALITY POLICY

The Technological University of the Philippines shall commit to provide quality higher
and advanced technological education; conduct relevant research and extension projects;
continually improve its value to customers through enhancement of personnel competence and
effective quality management system compliant to statutory and regulatory requirements; and
adhere to its core values.

CORE VALUES

T - Transparent and participatory governance

U - Unity in the pursuit of TUP mission, goals, and objectives
P - Professionalism in the discharge of quality service
I - Integrity and commitment to maintain the good name of the University
A - Accountability for individual and organizational quality performance
N - Nationalism through tangible contribution to the rapid economic growth of the
country
S - Shared responsibility, hard work, and resourcefulness in compliance to the mandates
of the university

This module is a property of Technological University of the Philippines Visayas and intended
for EDUCATIONAL PURPOSES ONLY and is NOT FOR SALE NOR FOR REPRODUCTION.
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TABLE OF CONTENTS
Page Numbers
TUP Vision, Mission, Quality Policy, and Core Values………………………1
Table of Contents………………………………………………………………..2
Course Description………………………………………………………. 3
Course Outcomes…………………………………………………………
General Guidelines/Class Rules……………………………………………
Grading System……………………………………………………………4
Learning Guide (Week No. 13) …………………………………………….5
Topic/s………………………………………………………………
Learning Outcomes…………………………………………………
Content/Technical Information………………………………………
Progress Check…… ……………………………………………….16
References…………………………………………………………17
List of References………………………………………………
About the Author/s……………………………………………………………..

This module is a property of Technological University of the Philippines Visayas and intended
for EDUCATIONAL PURPOSES ONLY and is NOT FOR SALE NOR FOR REPRODUCTION.
 3

COURSE DESCRIPTION

This course subject deals with the study on the Thyristor, characteristic of silicon
rectifier.

COURSE OUTCOMES

1.)Identify the 4 layer diode symbol

2.) Describe the basic structure and operation of 4 layer diode

GENERAL GUIDELINES/CLASS RULES

1. Students are expected to comply strictly with the university rule on dress code.
2. Make up exam and quizzes will be given only with prior approval of instructor
and under exceptional circumstances. For excused absence during the exam the
university policies will be followed.
3. Students are not allowed to leave the classroom once the class has started unless
extremely necessary student who leave the classroom without may valid reason
will be marked absent.
4. Homework or Project submitted later than the prescribe date will not anymore
be accepted.

Term Percentage Distribution

Prelim (wk.1- 5) --------------- 30%

Midterm (wk. 6-9) ---------------- 30%

Final (wk. 10-14) ---------------- 40%

GRADING SYSTEM

The student will be graded according to the following;

Average of examination ------------------------- 50%

Average of weekly assessment ----------------- 50%
Total ------------------ 100%

Prelim Grade: (Prelim Exam x 0.5) + (Assessment x 0.5)

Midterm Grade; (Midterm Exam x 0.50) + (Assessment x 0.5)
End term Grade; (Final Exam x 0.50) + (Assessment x 0.5)
Final Grade; (Prelim Grade x 0.30 + Midterm Grade x 0.30 + End term Grade x 0.40)

Passing Grade for this course is 5.0

This module is a property of Technological University of the Philippines Visayas and intended
for EDUCATIONAL PURPOSES ONLY and is NOT FOR SALE NOR FOR REPRODUCTION.
 4

LEARNING GUIDE

Week No.: __13__

TOPIC/S
Thyristor

a.) Operational characteristic of silicon control rectifier (SCR)

b.) System of biasing of (SCR)
c.) Circuit application of (SCR)
d.) Analysis of electrical variable for (SCR)

LEARNING OUTCOMES
1. To know how to determine the circuit application of silicon control rectifier, Diac and
Triac.
2. To know how to analyze the circuit problem .

CONTENT/TECHNICAL INFORMATION

Several type of semi conductor devices are introduced. A family of devices

known as Thyristor are constructed 4 semi conductor layer PNPN. Thyristor include the 4 layer
diode. The (SCR) Silicon control rectifier, the dial, the triac and the silicon control switch
(SCS). There type of thyristor share certain common characteristic in additional to their a layer
construction. They act as open circuit capable of the standing a certain rated voltage until they
are triggered. When triggered they turn on and become low resistance current paths and remain
so, even after the trigger is removed. Until current is reduced to a certain level or until they are
triggered off, depending on the type of device. Thyristor can be used to control the amount of
AC power to a lead and are used in motor speed control, ignition system and charging circuit.

Thyristor – is a 4 layer device with alternating P-type and N-type semi

conductor(PNPN) has 3 terminal (Anode (+) Cathode (-) and the gate control terminal. The
gate control the flow of current between the anode and cathode.

This module is a property of Technological University of the Philippines Visayas and intended
for EDUCATIONAL PURPOSES ONLY and is NOT FOR SALE NOR FOR REPRODUCTION.
 5

The 4 layer diode also known as Shockley diode- is a type of thyristor which is
a class of devices constructed of 4 semi conductor layer. The basic construction of 4 layer
diode shown below.

Construction of thyristor- is a 4 layer and 3 junction devices which is majority composed of

silicon as its basic material. Its construction almost resemble like a normal transistor. It is
formed by back to back joining of 2 transistor by combination of PNP and NPN transistor.
The 2 region form a connection with the cathode and anode terminal with the help of
molybdenum plate achieve a 4 layer structure comprising of 3 junction. We know that a
switching devices must posses a very small leakage current.

Thyristor operation (SCR)- is composed of 2P and 2N type of semi conductor generates 4

layer structure.

Represent that the collector of the 1st configuration of transistor act as a base for the 2nd one
similarly the collector of 2nd configuration of thyristor function as the base for the 1st one

This module is a property of Technological University of the Philippines Visayas and intended
for EDUCATIONAL PURPOSES ONLY and is NOT FOR SALE NOR FOR REPRODUCTION.
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Operation:

When the anode terminal of the device is connected to the positive terminal of
battery and cathode form a connection with the negative terminal of the battery due to this
junction 1 and junction 2 become forward biased but at the same time. This forward
connection makes the junction 2 reversed biased. The figure below represent this forward
connection.

Due to forward biasing junction 1+2 allow the movement carriers. But the
intermediate junction (J2) because of reverse potential generate wide deplection region and
block the flow of majority carrier through it. However the very small leakage current due to
the movement of minority carrier flow through the device. This current is not enough to drive
the circuit. So despite providing forward voltage the device does not conduct.

This module is a property of Technological University of the Philippines Visayas and intended
for EDUCATIONAL PURPOSES ONLY and is NOT FOR SALE NOR FOR REPRODUCTION.
 7

This cause the J1+J3 get reverse biased but at the same time due to supply. The
junction (J2) come to forward biased condition. So the reverse biased junction J1+J3 does not
allow to flow of current to take place. Leakage current flow through the device this state of
device is known as the reverse blocking move or off state. The actual operating mode of
thyristor arises when an external gate pulse is provided. The sufficient positive voltage is
provided to anode and gate with reference to the cathode.

The upper PNP layer form Q1, and the lower NPN layer form Q2 with the 2
middle layer shared by both equivalent transistor. Notice that the base emitter junction pf Q1
corresponds to PN junction. The base emitter junction of Q2 corresponds to PN junction 3
and the base collector junction of both Q1 & Q2 correspond to PN junction 2.

Which a positive bias voltage applied to the anode with respect to the cathode is shown.

The base emitter junction of Q1+Q2 in figure 11-29 (PN Junction 1+3 are forward biased and
the common base collector junction (PN Junction 2)

The current in a 4 layer diode are shown below.

This module is a property of Technological University of the Philippines Visayas and intended
for EDUCATIONAL PURPOSES ONLY and is NOT FOR SALE NOR FOR REPRODUCTION.
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At low bias level there is very little anode current and thus it is in the off state
or forward blocking region.

The characteristic curve of the thyristor.

Where:
VBR( r ) – Reverse breakdown voltage
VBR( f ) – Forward breakdown voltage
IL ( f ) – Forward leakage current
IL( r ) – Reverse leakage current
I (H) – Holding current
I (L)- Latching current

This module is a property of Technological University of the Philippines Visayas and intended
for EDUCATIONAL PURPOSES ONLY and is NOT FOR SALE NOR FOR REPRODUCTION.
 9

Forward breakdown voltage – the operation of the 4 layer diode may seem unusual
when it is formed biased it can act essentially as an open switch there is a region of forward
bias called the forward blocking region. Forward blocking region exist from VAK-OK up to
a value of VAK called forward breakdown voltage (VBR (f) ).

This is indicated on the 4 layer diode characteristic will shown below.

As VAK is increased from 0 , the anode current IA gradually increase, A point is

reached where Ia=Is the switching current. At this point VAK=VBR ( f ) and the internal
transistor structure become saturated. When this happen the forward voltage VAK suddenly
decrease to a low value and 4 layer diode enter the forward conduction region. Now the
device is in the on state and acts as a closed switch.

When the anode current drop back below the holding value. I(h) device is turn off.

I(s)= Switching current

I(a)= Anode current
VAK= Anode, Cathode voltage

Holding current (Ih) – once the 4 layer diode is conducting ( in the state) it will continue to
conduct until the anode current is reduced below the specified level called holding current
(Ih)
Switching current(Is) – the value of the anode current at the point where the device switch
from the forward blocking region(OH) to the forward conduction region (ON) is called the
switching current (Is) the value of current is always less than the holding current (Ih)

Ex.1.) A certain 4 layer diode is biased in the forward blocking region with an anode to
cathode voltage of 20V. Under this bias condition, the anode current is 1 micro amper.
Determine the resistance of the diode is forward blocking region.

This module is a property of Technological University of the Philippines Visayas and intended
for EDUCATIONAL PURPOSES ONLY and is NOT FOR SALE NOR FOR REPRODUCTION.
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Ex.2.) Determine the gate trigger current and anode current when the switch Si is closed
assume VAK= 0.2V, VGK= 0.7V, Ih = 5 A.

Ex.3.) Determine the value of anode current when the device is on VBR(f)= 10V assume the
forward voltage drop is 0.90.

This module is a property of Technological University of the Philippines Visayas and intended
for EDUCATIONAL PURPOSES ONLY and is NOT FOR SALE NOR FOR REPRODUCTION.
 11

The Diac- is a 2 terminal 4 layer semi conductor device that can conduct current in either
direction when activated.

Triac- is like a diac with a gate terminal it cam be turned on by a pulse gate current and diac
not require the breakdown voltage.

This module is a property of Technological University of the Philippines Visayas and intended
for EDUCATIONAL PURPOSES ONLY and is NOT FOR SALE NOR FOR REPRODUCTION.
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PROGRESS CHECK

1.)A Thyristor has ?

A) 2pn junction
.) 3pn junction
C.) 4pn junction
D.) Only 2 terminal

2.) Common type of thyristor include

A.) SCR
B.) Diac
C.) Triac
D.) Diac+ Triac

3.) A 4 layer diode turn on when the anode to cathode voltage exceed
A.) 0.7v
B.) Gate voltage
C.) Forward breakdown voltage
D.) Forward blocking voltage

4.) Once it is conducting a 4 layer diode can be turned off by

A.) Reducing the current
B.) Disconnecting the anode voltage
C.) A and B
D.) None of these

5.) An SCR differ from the 4 layer diode because

A.) Dias a gate terminal
B.) It is not a thyristor
C.) Does not have 4 layer
D.) Can not be turned on & off

6.) An CSR can be turned off by

A.) By anode current interruption
B.) A negative pulse the gate
C.) Forced commutation
D.) A and C

7.) In the forward blocking region the SCR is

A.) Reverse bias
B.) In the off state
C.) In the on state
D.) At the point of breakdown

This module is a property of Technological University of the Philippines Visayas and intended
for EDUCATIONAL PURPOSES ONLY and is NOT FOR SALE NOR FOR REPRODUCTION.
 13

8.) The specified value of holding current for an SCK means that
A.) The device will turn on when anode current exceed this value
B.) The device will turn off when anode current fall below value
C.) The device may be damage if the anode current exceed value
D.) The gate current must equal or exceed value

9.) The Diac is

A.) Thyristor
B.) A Bi lateral terminal device
C.) Two parallel 4 layer diode in reverse direction
D.) All of these

10.) The triac is

A.) 4 terminal device
B.) Bi directional SCR
C.) Not a thyristor
D.) A and B

II-
1.)Draw the diagram /circuit equivalent of 4 transistor Q1, Q2, Q3 & Q4. Connect it to form
A.) Diac circuit
B.) Triac circuit

III- Solving problem

1.)A 4 layer diode was biased in the forward blocking region having 55v composed the anode
+ cathode. What will be the anode current under this bias condition if the resistance of diode
in formed blocking region is 10,00 ohms

2.) Determine the value od RS when the device is on the forward break over voltage
produced 12.5v. The forward voltage drop is 0.83v only.

3.) What is the resistance in forward conduction region of 4 layer diode in the figure problem
#2 ?

4.) Determine the gate resistance and anode voltage of the anode current of 0.5millA and
gate current of 3.5millA when the switch 1 is momentarily closed. Assuming VAK= 0.4v,
VGA = 0.67v and Ih= 3millA .

REFERENCES
Electronic devices
Conventional current version
By: Thomas L. Floyd
Cir.TK 7870 F5 2008

This module is a property of Technological University of the Philippines Visayas and intended
for EDUCATIONAL PURPOSES ONLY and is NOT FOR SALE NOR FOR REPRODUCTION.