FQPF7N65C — N-Channel QFET® MOSFET

August 2013

FQPF7N65C
N-Channel QFET® MOSFET
650 V, 7 A, 1.4 Ω

Description Features
This N-Channel enhancement mode power MOSFET is • 7 A, 650 V, R
DS(on).= 1.4 Ω (Max.) @ VGS = 10 V, ID = 3.5 A
produced using Fairchild Semiconductor®’s proprietary
• Low Gate Charge (Typ. 28 nC)
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to • Low Crss (Typ. 12 pF)
reduce on-state resistance, and to provide superior • 100% Avalanche Tested
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC),
and electronic lamp ballasts.

D
!

D ◀ ▲
G! ●

G
●

GD S
TO-220F S TO-220F
Y-formed !
S

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol Parameter FQPF7N65C / FQPF7N65CYDTU Unit

VDSS Drain-Source Voltage 650 V
ID Drain Current - Continuous (TC = 25°C) 7* A
- Continuous (TC = 100°C) 4.2 * A
IDM Drain Current - Pulsed (Note 1) 28 * A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 212 mJ
IAR Avalanche Current (Note 1) 7 A
EAR Repetitive Avalanche Energy (Note 1) 1.6 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25°C) 52 W
- Derate above 25°C 0.42 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
TL 300 °C
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.

Thermal Characteristics
Symbol Parameter FQPF7N65C / FQPF7N65CYDTU Unit
RθJC Thermal Resistance, Junction-to-Case, Max. 2.4 °C/W
RθJA Thermal Resistance, Junction-to-Ambient, Max. 62.5 °C/W

©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com

FQPF7N65C Rev. C1
 FQPF7N65C — N-Channel QFET® MOSFET
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FQPF7N65C FQPF7N65C TO-220F - - 50
FQPF7N65C FQPF7N65CYDTU TO-220F (Y-formed) - - 50

Electrical Characteristics TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Unit

Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 650 -- -- V
∆BVDSS Breakdown Voltage Temperature
ID = 250 µA, Referenced to 25°C -- 0.8 -- V/°C
/ ∆TJ Coefficient
IDSS VDS = 650 V, VGS = 0 V -- -- 1 µA
Zero Gate Voltage Drain Current
VDS = 520 V, TC = 125°C -- -- 10 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V
RDS(on) Static Drain-Source
VGS = 10 V, ID = 3.5 A -- 1.2 1.4 Ω
On-Resistance
gFS Forward Transconductance VDS = 40 V, ID = 3.5 A -- 8 -- S

Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, -- 955 1245 pF
Coss Output Capacitance f = 1.0 MHz -- 100 130 pF
Crss Reverse Transfer Capacitance -- 12 16 pF

Switching Characteristics
td(on) Turn-On Delay Time VDD = 325 V, ID = 7A, -- 20 50 ns
tr Turn-On Rise Time -- 50 110 ns
RG = 25 Ω
td(off) Turn-Off Delay Time -- 90 190 ns
tf Turn-Off Fall Time (Note 4) -- 55 120 ns
Qg Total Gate Charge VDS = 520 V, ID = 7A, -- 28 36 nC
Qgs Gate-Source Charge VGS = 10 V -- 4.5 -- nC
Qgd Gate-Drain Charge (Note 4) -- 12 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current -- -- 7 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 28 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 7A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0 V, IS = 7A, -- 400 -- ns
Qrr Reverse Recovery Charge dIF / dt = 100 A/µs -- 3.3 -- µC

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 8mH, IAS = 7A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 7A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Essentially independent of operating temperature

©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com

FQPF7N65C Rev. C1
 FQPF7N65C — N-Channel QFET® MOSFET
Typical Characteristics

VGS
Top : 15.0 V
10.0 V
1
8.0 V 10
7.0 V
1 6.0 V
10 5.5 V
ID, Drain Current [A]

Bottom: 5.0 V

ID, Drain Current [A]

o
150 C

o
10
0
o -55 C
0
25 C
10

※ Notes :
1. 250µs Pulse Test ※ Notes :
2. TC = 25℃ 1. VDS = 40V
2. 250µs Pulse Test
-1 -1
10 10
0 1
10 10 2 4 6 8 10

VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

3.0

1
10
Drain-Source On-Resistance

IDR, Reverse Drain Current [A]

2.5
RDS(ON) [Ω ],

VGS = 10V

2.0
0
10
150℃
25℃
1.5
VGS = 20V ※ Notes :
1. VGS = 0V
2. 250µs Pulse Test
※ Note : TJ = 25℃
-1
1.0 10
0 5 10 15 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
ID, Drain Current [A] VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation with Source Current
and Temperature

2000 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
10 VDS = 130V
1600
VGS, Gate-Source Voltage [V]

VDS = 325V
Ciss
8
Capacitances [pF]

VDS = 520V
1200

Coss 6

800
※ Note ;
1. VGS = 0 V 4
2. f = 1 MHz

400
Crss
2
※ Note : ID = 7A

0 0
-1 0 1
10 10 10 0 4 8 12 16 20 24 28

VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com

FQPF7N65C Rev. C1
 FQPF7N65C — N-Channel QFET® MOSFET
Typical Characteristics (Continued)

1.2 3.0
Drain-Source Breakdown Voltage

2.5

Drain-Source On-Resistance
1.1
BVDSS, (Normalized)

RDS(ON), (Normalized)
2.0

1.0 1.5

1.0

0.9 ※ Notes :
1. VGS = 0 V ※ Notes :
0.5 1. VGS = 10 V
2. ID = 250 µA
2. ID = 3.5 A

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o
TJ, Junction Temperature [ C]
o TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs Temperature vs Temperature

8
Operation in This Area
is Limited by R DS(on)

1 10 µs
10
100 µs 6
ID, Drain Current [A]

ID, Drain Current [A]

1 ms

0
10 ms
10
DC 4

-1
10
※ Notes : 2
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse

-2
10 0
0 1 2 3
10 10 10 10 25 50 75 100 125 150
VDS, Drain-Source Voltage [V] TC, Case Temperature [℃]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs Case Temperature

0
D = 0 .5
10
Zθ JC(t), Thermal Response

0 .2

0 .1

0 .0 5 ※ N o te s :
-1
10 1 . Z θ J C (t) = 2 .4 ℃ /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
0 .0 2 3 . T J M - T C = P D M * Z θ J C (t)
0 .0 1
PDM
t1
10
-2 s in g le p u ls e t2

-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t1 , S q u a r e W a v e P u l s e D u r a t i o n [ s e c ]

Figure 11 . Transient Thermal Response Curve

©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com

FQPF7N65C Rev. C1
 FQPF7N65C — N-Channel QFET® MOSFET
Figure 12. Gate Charge Test Circuit & Waveform

VGS
Same Type
50KΩ
as DUT Qg
12V 200nF
300nF 10V
VDS
VGS Qgs Qgd

DUT
3mA

Charge

Figure 13. Resistive Switching Test Circuit & Waveforms

RL VDS
VDS 90%

VGS VDD
RG

10%
VGS
10V DUT
td(on) tr td(off)
tf
t on t off

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

L BVDSS
1
VDS EAS = ---- L IAS2 --------------------
2 BVDSS - VDD
BVDSS
ID
IAS
RG
VDD ID (t)

10V DUT VDD VDS (t)

tp
tp Time

©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com

FQPF7N65C Rev. C1
 FQPF7N65C — N-Channel QFET® MOSFET
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT +

VDS

I SD
L

Driver
RG
Same Type
as DUT VDD

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

Gate Pulse Width

VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current

I SD
( DUT ) di/dt

IRM

Body Diode Reverse Current

VDS
( DUT ) Body Diode Recovery dv/dt

VSD VDD

Body Diode
Forward Voltage Drop

©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com

FQPF7N65C Rev. C1
 FQPF7N65C — N-Channel QFET® MOSFET
Mechanical Dimensions
TO-220F

Figure 16. TO-220F 3L - TO220, Molded, 3LD, Full Pack, EIAJ SC91, Straight lead
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify
or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions,
specifically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003
Dimensions in Millimeters
©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
FQPF7N65C Rev. C1
 FQPF7N65C — N-Channel QFET® MOSFET
Mechanical Dimensions

TO-220F (Y-formed)

Figure 17. TO-220F 3L - TO220, Molded, 3LD, Full Pack, EIAJ SC91, Y formed lead
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify
or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions,
specifically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-FA3

Dimensions in Millimeters
©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
FQPF7N65C Rev. C1
 FQPF7N65C — N-Channel QFET® MOSFET
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Rev. I64
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FQPF7N65C Rev. C1
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