Scribd Logo
Upload

Welcome to Scribd!

  • ECE109 Lecture 5 2022

    Uploaded by

    logay yu
    13 views41 pages
    The document discusses diffusion and point defects in materials. It defines diffusion as the movement of atoms in solids from areas of high concentration to low concentration. For diffusion to occur in solids, point defects are required to allow atoms to jump between lattice sites. The rate of diffusion and other material processes increases exponentially with temperature. Diffusion is important in semiconductor devices, where metal-oxide-semiconductor structures rely on diffusion of dopants.

    Original Description:

    Original Title

    ECE109_Lecture_5_2022

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    Report this Document
    The document discusses diffusion and point defects in materials. It defines diffusion as the movement of atoms in solids from areas of high concentration to low concentration. For diffusion to occur in solids, point defects are required to allow atoms to jump between lattice sites. The rate of diffusion and other material processes increases exponentially with temperature. Diffusion is important in semiconductor devices, where metal-oxide-semiconductor structures rely on diffusion of dopants.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    Download as pdf or txt
    13 views41 pages

    ECE109 Lecture 5 2022

    Uploaded by

    logay yu
    The document discusses diffusion and point defects in materials. It defines diffusion as the movement of atoms in solids from areas of high concentration to low concentration. For diffusion to occur in solids, point defects are required to allow atoms to jump between lattice sites. The rate of diffusion and other material processes increases exponentially with temperature. Diffusion is important in semiconductor devices, where metal-oxide-semiconductor structures rely on diffusion of dopants.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    Download as pdf or txt
    of 41

    Chapter 5

    Diffusion

    Ting Tsui, ECE109


    Introduction to Materials Science for Engineers, 8e C opyright ©2015, 2009 by Pearson Education, Inc.
    James F. Shackelford Modified from Prof.Yuning Li notes All rights reserved.
    Ting Tsui, ECE109
    Introduction to Materials Science for Engineers, 8e C opyright ©2015, 2009 by Pearson Education, Inc.
    James F. Shackelford Modified from Prof.Yuning Li notes All rights reserved.
    Ting Tsui, ECE109
    Introduction to Materials Science for Engineers, 8e C opyright ©2015, 2009 by Pearson Education, Inc.
    James F. Shackelford Modified from Prof.Yuning Li notes All rights reserved.
    Ting Tsui, ECE109
    Introduction to Materials Science for Engineers, 8e C opyright ©2015, 2009 by Pearson Education, Inc.
    James F. Shackelford Modified from Prof.Yuning Li notes All rights reserved.
    Ting Tsui, ECE109
    Introduction to Materials Science for Engineers, 8e C opyright ©2015, 2009 by Pearson Education, Inc.
    James F. Shackelford Modified from Prof.Yuning Li notes All rights reserved.
    Ting Tsui, ECE109
    Introduction to Materials Science for Engineers, 8e C opyright ©2015, 2009 by Pearson Education, Inc.
    James F. Shackelford Modified from Prof.Yuning Li notes All rights reserved.
    Ting Tsui, ECE109
    Introduction to Materials Science for Engineers, 8e C opyright ©2015, 2009 by Pearson Education, Inc.
    James F. Shackelford Modified from Prof.Yuning Li notes All rights reserved.
    Ting Tsui, ECE109
    Introduction to Materials Science for Engineers, 8e C opyright ©2015, 2009 by Pearson Education, Inc.
    James F. Shackelford Modified from Prof.Yuning Li notes All rights reserved.
    Ting Tsui, ECE109
    Introduction to Materials Science for Engineers, 8e C opyright ©2015, 2009 by Pearson Education, Inc.
    James F. Shackelford Modified from Prof.Yuning Li notes All rights reserved.
    Introduction to Materials Science for Engineers, 8e C opyright ©2015, 2009 by Pearson Education, Inc.
    James F. Shackelford All rights reserved.
    Ting Tsui, ECE109
    Introduction to Materials Science for Engineers, 8e C opyright ©2015, 2009 by Pearson Education, Inc.
    James F. Shackelford Modified from Prof.Yuning Li notes All rights reserved.
    What is activation energy (Q)?

    Ting Tsui, ECE109


    Introduction to Materials Science for Engineers, 8e C opyright ©2015, 2009 by Pearson Education, Inc.
    James F. Shackelford Modified from Prof.Yuning Li notes All rights reserved.
    Process path showing how an atom must overcome an activation
    energy, q, to move from one stable position to a similar adjacent
    position.

    Introduction to Materials Science for Engineers, 8e C opyright ©2015, 2009 by Pearson Education, Inc.
    James F. Shackelford All rights reserved.
    Simple mechanical analog of the process path of Figure 5.2. The box
    must overcome an increase in potential energy, ΔE, in order to move
    from one stable position to another.

    Introduction to Materials Science for Engineers, 8e C opyright ©2015, 2009 by Pearson Education, Inc.
    James F. Shackelford All rights reserved.
    Ting Tsui, ECE 109
    Introduction to Materials Science for Engineers, 8e C opyright ©2015, 2009 by Pearson Education, Inc.
    James F. Shackelford Modified from Prof.Yuning Li notes All rights reserved.
    Point defects occur as a direct results of
    the thermal vibration of atoms in the
    crystal structure.

    For example
    𝑛𝑣 −𝐸𝑣/𝑘𝑇
    = 𝐶𝑒
    𝑛 𝑠𝑖𝑡𝑒𝑠
    nv is the number vacancy
    nsites is the number of ideal crystal-lattice sites
    Ev is the energy of formation of a single vacancy
    C is the pre-exponential constant
    Introduction to Materials Science for Engineers, 8e C opyright ©2015, 2009 by Pearson Education, Inc.
    James F. Shackelford All rights reserved.
    𝑛𝑣 −𝐸𝑣/𝑘
    How to find ?= 𝐶𝑒
    𝑛 𝑠𝑖𝑡𝑒𝑠

    Introduction to Materials Science for Engineers, 8e C opyright ©2015, 2009 by Pearson Education, Inc.
    James F. Shackelford All rights reserved.
    Ting Tsui, ECE 109
    Introduction to Materials Science for Engineers, 8e C opyright ©2015, 2009 by Pearson Education, Inc.
    James F. Shackelford Modified from Prof.Yuning Li notes All rights reserved.
    Room temperature Δ𝐿 Δ𝑎
    >
    𝐿 𝑎
    aluminum
    L2 > L1 > L0
    L0
    Heating sample
    Vacancy (open circle)

    volume change by heating


    without vacancy

    L1 L2

    Ting Tsui, ECE109


    Introduction to Materials Science for Engineers, 8e C opyright ©2015, 2009 by Pearson Education, Inc.
    James F. Shackelford Modified from Prof.Yuning Li notes All rights reserved.
    Ting Tsui, ECE109
    Introduction to Materials Science for Engineers, 8e C opyright ©2015, 2009 by Pearson Education, Inc.
    James F. Shackelford Modified from Prof.Yuning Li notes All rights reserved.
    Introduction to Materials Science for Engineers, 8e C opyright ©2015, 2009 by Pearson Education, Inc.
    James F. Shackelford All rights reserved.
    At sufficient high temperatures atoms and
    molecules can be mobile in both liquid and solid.

    Molecules move from regions of high


    concentration to low concentration.

    Self-diffusion occurs in homogenous material. For


    example, water molecules are in continuous
    motion and migrate in pure water.

    In solids, diffusion rate is small and generally


    requires point defects to complete the diffusion
    process.

    Introduction to Materials Science for Engineers, 8e C opyright ©2015, 2009 by Pearson Education, Inc.
    James F. Shackelford All rights reserved.
    A large number of engineering and materials
    science process rate rises exponentially with
    temperature.

    For example, diffusivity, creep deformation,


    electrical conductivity of semi-conductors.

    Introduction to Materials Science for Engineers, 8e C opyright ©2015, 2009 by Pearson Education, Inc.
    James F. Shackelford All rights reserved.
    Ting Tsui, ECE109
    Introduction to Materials Science for Engineers, 8e C opyright ©2015, 2009 by Pearson Education, Inc.
    James F. Shackelford Modified from Prof.Yuning Li notes All rights reserved.
    Ting Tsui, ECE109
    Introduction to Materials Science for Engineers, 8e C opyright ©2015, 2009 by Pearson Education, Inc.
    James F. Shackelford Modified from Prof.Yuning Li notes All rights reserved.
    MOS (Metal–Oxide–Semiconductor)

    Ting Tsui, ECE109


    Introduction to Materials Science for Engineers, 8e C opyright ©2015, 2009 by Pearson Education, Inc.
    James F. Shackelford Modified from Prof.Yuning Li notes All rights reserved.
    Introduction to Materials Science for Engineers, 8e C opyright ©2015, 2009 by Pearson Education, Inc.
    James F. Shackelford All rights reserved.
    Ting Tsui, ECE109
    Introduction to Materials Science for Engineers, 8e C opyright ©2015, 2009 by Pearson Education, Inc.
    James F. Shackelford Modified from Prof.Yuning Li notes All rights reserved.
    Ting Tsui, ECE109
    Introduction to Materials Science for Engineers, 8e C opyright ©2015, 2009 by Pearson Education, Inc.
    James F. Shackelford Modified from Prof.Yuning Li notes All rights reserved.
    Ting Tsui, ECE109
    Introduction to Materials Science for Engineers, 8e C opyright ©2015, 2009 by Pearson Education, Inc.
    James F. Shackelford Modified from Prof.Yuning Li notes All rights reserved.
    Ting Tsui, ECE109
    Introduction to Materials Science for Engineers, 8e C opyright ©2015, 2009 by Pearson Education, Inc.
    James F. Shackelford Modified from Prof.Yuning Li notes All rights reserved.
    Ting Tsui, ECE109
    Introduction to Materials Science for Engineers, 8e C opyright ©2015, 2009 by Pearson Education, Inc.
    James F. Shackelford Modified from Prof.Yuning Li notes All rights reserved.
    Ting Tsui, ECE109
    Introduction to Materials Science for Engineers, 8e C opyright ©2015, 2009 by Pearson Education, Inc.
    James F. Shackelford Modified from Prof.Yuning Li notes All rights reserved.
    Ting Tsui, ECE109
    Introduction to Materials Science for Engineers, 8e C opyright ©2015, 2009 by Pearson Education, Inc.
    James F. Shackelford Modified from Prof.Yuning Li notes All rights reserved.
    Introduction to Materials Science for Engineers, 8e C opyright ©2015, 2009 by Pearson Education, Inc.
    James F. Shackelford All rights reserved.
    Introduction to Materials Science for Engineers, 8e C opyright ©2015, 2009 by Pearson Education, Inc.
    James F. Shackelford All rights reserved.
    Introduction to Materials Science for Engineers, 8e C opyright ©2015, 2009 by Pearson Education, Inc.
    James F. Shackelford All rights reserved.
    Introduction to Materials Science for Engineers, 8e C opyright ©2015, 2009 by Pearson Education, Inc.
    James F. Shackelford All rights reserved.
    Ting Tsui, ECE109
    Introduction to Materials Science for Engineers, 8e C opyright ©2015, 2009 by Pearson Education, Inc.
    James F. Shackelford Modified from Prof.Yuning Li notes All rights reserved.
    Introduction to Materials Science for Engineers, 8e C opyright ©2015, 2009 by Pearson Education, Inc.
    James F. Shackelford All rights reserved.
    Ting Tsui, ECE109
    Introduction to Materials Science for Engineers, 8e C opyright ©2015, 2009 by Pearson Education, Inc.
    James F. Shackelford Modified from Prof.Yuning Li notes All rights reserved.

    You might also like