ASSIGNMENT NO - 9

NANO ELECTRONICS LAB

NAME: SUBHAJIT SEN
ENROLLMENT NO: MT22MVD015
DATE OF SUBMISSION: 20-04-2023
Q) Plot input characteristics of graphene-FET output using the NanoTcadViDES software.
SOL:
CODE:
from NanoTCAD_ViDES import *

import sys

rank = MPI.COMM_WORLD.Get_rank()

# I create the grid

xg=nonuniformgrid(array([-10,1,0,0.05,10,1]))

FLAKE=graphene(50);

acc=0.144;

kF=2*pi/(3*sqrt(3)*acc);

kymax=kF+2;

Nky=64;

dk=(kymax-kF)/(Nky*0.5);

FLAKE.kmax=kF+dk*Nky*0.5;

FLAKE.kmin=kF-dk*Nky*0.5;

FLAKE.dk=dk;

grid=grid2D(xg,FLAKE.y,FLAKE.x,FLAKE.y);

# I take care of the solid

SiO2=region("hex",grid.xmin,grid.xmax,grid.ymin,grid.ymax)

SiO2.eps=3.9;

top_gate=gate("hex",grid.xmax,grid.xmax,15,35);

bottom_gate=gate("hex",grid.xmin,grid.xmin,15,35);

p=interface2D(grid,SiO2,top_gate,bottom_gate);

p.MPI_kt="yes"

fraction=5e-3

dope_reservoir(grid,p,FLAKE,fraction,array([-1,1,grid.ymin,15]));

dope_reservoir(grid,p,FLAKE,fraction,array([-1,1,35,grid.ymax]));

solve_init(grid,p,FLAKE);

FLAKE.mu2=-0.1;

Vgsmin=0.05;
Vgsmax=0.95;

Vgstep=0.05;

Np=int(abs(Vgsmin-Vgsmax)/Vgstep)+1;

vg=zeros(Np);

current=zeros(Np);

p.underel=0.1;

counter=0;

Vgs=Vgsmin;

while (Vgs<=Vgsmax):

top_gate.Ef=-Vgs;

set_gate(p,top_gate);

bottom_gate.Ef=-Vgs;

set_gate(p,bottom_gate);

p.normpoisson=1e-1;

p.normd=5e-3;

solve_self_consistent(grid,p,FLAKE);

vg[counter]=Vgs;

current[counter]=FLAKE.current();

if (rank==0):

string="./datiout1/Phi%s.out" %Vgs;

savetxt(string,p.Phi);

string="./datiout1/ncar%s.out" %Vgs;

savetxt(string,p.free_charge);

a=[FLAKE.E,FLAKE.T];

string="./datiout1/T%s.out" %Vgs;

savetxt(string,transpose(a));

string="./datiout1/jayn%s.out" %Vgs;

fp=open(string,"w");

string2="%s" %current[counter];

fp.write(string2);
fp.close();

counter=counter+1;

Vgs=Vgs+Vgstep;

tempo=[vg,current]

savetxt("./datiout1/idvgs.out",transpose(tempo));

MPI.Finalize()

OUTPUT:

CONCLUSION:
The Id-Vgs characteristics were obtained for graphene FET using NanoTccad Vides.