SQ9945AEY

Vishay Siliconix

Automotive
Dual N-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
• TrenchFET® Power MOSFET
VDS (V) 60
Pb-free
• Package with Low Thermal Resistance
RDS(on) (Ω) at VGS = 10 V 0.080 Available

ID (A) ± 3.7 AEC-Q101 RELIABILITY RoHS*

COMPLIANT
Configuration Dual • Passed all AEC-Q101 Reliability Testing
D2
D1 • Characterization Ongoing
SO-8

S1 1 8 D1

G1 2 7 D1

S2 3 6 D2 G1 G2
G2 4 5 D2

Top V iew
S1 S2

N-Channel MOSFET N-Channel MOSFET

ORDERING INFORMATION
Package SO-8
Lead (Pb)-free SQ9945AEY-T1-E3
SnPb SQ9945AEY-T1

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 60
V
Gate-Source Voltage VGS ± 20
TC = 25 °C - 3.7
Continuous Drain Currenta ID
TC = 70 °C - 3.2
A
Continuous Source Current (Diode Conduction)a IS 2
Pulsed Drain Currentb IDM 25
Single Pulse Avalanche Energy EAS - mJ
L = 0.1 mH
Single Pulse Avalanche Current IAS - A
TC = 25 °C 2.4
Maximum Power Dissipationb PD W
TA = 70 °C 1.7
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mountc RthJA -
°C/W
Junction-to-Case (Drain) RthJC -
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR-4 material).

* Pb containing terminations are not RoHS compliant, exemptions may apply

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SPECIFICATIONS TC = 25 °C, unless otherwise noted

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA - - -
V
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.0 - 3.0
Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA
VGS = 0 V VDS = 60 V - - 1.0
Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = 60 V - - 10 µA
VGS = 0 V VDS = 60 V, TJ = 55 °C - - -
On-State Drain Currenta ID(on) VGS = 10 V VDS ≥ 5 V 20 - - A
VGS = 10 V ID = 3.7 A - 0.060 0.080
Drain-Source On-State Resistancea RDS(on) VGS = 10 V ID = 30 A, TJ = 125 °C - - - Ω
VGS = 10 V ID = 30 A, TJ = 175 °C - - -
Forward Transconductancea gfs VDS = 15 V, ID = 3.7 A - - 11 S
Dynamicb
Input Capacitance Ciss - - -
Output Capacitance Coss VGS = 0 V VDS = 25 V, f = 1 MHz - - - pF
Reverse Transfer Capacitance Crss - - -
Total Gate Chargec Qg - 11 20
Gate-Source Chargec Qgs VGS = 10 V VDS = 30 V, ID = 3.7 A - 2 - nC
Gate-Drain Chargec Qgd - 2 -
Turn-On Delay Time c td(on) - 9 20
Rise Timec tr VDD = 30 V, RL = 30 Ω - 10 20
ns
Turn-Off Delay Timec td(off) ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω - 21 40
Fall Timec tf - 8 20
Source-Drain Diode Ratings and Characteristics TC = 25 °Cb
Pulsed Currenta ISM - - - A
Forward Voltage VSD IF = 85 A, VGS = 0 V - - - V
Reverse Recovery Time trr - 45 80 ns
Peak Reverse Recovery Current IRM(REC) IF = 2 A, dI/dt = 100 A/µs - - - A
Reverse Recovery Charge Qrr - - - µC
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

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TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted

25 25
VGS = 10 thru 5 V
TC = - 55 °C
20 4V 20
25 °C
I D - Drain Current (A)

I D - Drain Current (A)

150 °C
15 15

10 10

3V
5 5

0 0
0 1 2 3 4 5 0 1 2 3 4 5 6
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

300
0.20

250
0.16
RDS(on) - On-Resistance (Ω)
g fs - Transconductance (S)

200

Graph to be available 0.12

150
upon completion VGS = 4.5 V

100
of testing 0.08

VGS = 10 V
50 0.04

0
0 20 40 60 80 100 120 0
0 5 10 15 20 25
ID - Drain Current (A) ID - Drain Current (A)
Transconductance On-Resistance vs. Drain Current

800 10

VDS = 30 V
VGS - Gate-to-Source Voltage (V)

8
ID = 3.7 A
600 Ciss
C - Capacitance (pF)

400

200
Coss 2
Crss

0 0
0 10 20 30 40 50 60 0 2 4 6 8 10
VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)
Capacitance Gate Charge

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TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted

2.4 30

2.0 VGS = 10 V
ID = 3.7 A
RDS(on) - On-Resistance

I S - Source Current (A)

1.6 10
(Normalized)

TJ = 175 °C
1.2

TJ = 25 °C
0.8

0.4

0 1
- 50 - 25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5

TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V)

On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage

0.20 56

0.16
R DS(on) - On-Resistance (Ω)

52

0.12
Graph to be available
VDS (V)

48
upon completion
0.08
of testing
ID = 3.7 A
44
0.04

0 40
0 2 4 6 8 10 - 50 - 25 0 25 50 75 100 125 150 175
VGS - Gate-to-Source Voltage (V)
T J - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Drain Source Breakdown
vs. Junction Temperature

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THERMAL RATINGS TA = 25 °C, unless otherwise noted

120 1000

100
100
I D - Drain Current (A)

80
Graph to be available Graph to be available

I Dav (A)
60 upon completion upon completion
10
of testing of testing
40
1
20

0 0.1
0 25 50 75 100 125 150 175
0.00001 0.0001 0.001 0.01 0.1 1
TC - Ambient Temperature (°C)
TAV (s)
Maximum Drain Current vs. Ambient Temperature Avalanche Current vs. Time
120 0.6

0.3
90
ID = 250 µA
VGS(th) Variance (V)

0.0
Power (W)

60

- 0.3

30
- 0.6

0 - 0.9
0.001 0.01 0.1 1 10 100 1000 - 50 - 25 0 25 50 75 100 125 150 175
Time (s) TJ - Temperature (°C)
Single Pulse Power, Junction-to-Ambient Threshold Voltage

1000

100
I D - Drain Current (A)

Graph to be available
10
upon completion
of testing

0.1
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS minimum VGS at which RDS(on) is specified

Safe Operating Area

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THERMAL RATINGS TA = 25 °C, unless otherwise noted

1
Normalized Effective Transient
Thermal Impedance

Graph to be available
upon completion
0.1 of testing

0.01
10 -4 10 -3 10 -2 10 -1 1
Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Case

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2
Notes:

0.1 PDM
0.1
0.05 t1
t2
t1
1. Duty Cycle, D =
t2
0.02
2. Per Unit Base = R thJA = 93 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse 4. Surface Mounted

0.01
10-4 10-3 10-2 10-1 1 10 10 2 10 3
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient

1000

100
IAS(PEAK) (A)

10
Graph to be available
upon completion
1
of testing

0.1

0.01
10-4 10-3 10-2 10-1 1 10 100 1000
tav (s)

Single Pulse Avalanche Current (Peak) vs. Time in Avalanche

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THERMAL RATINGS TA = 25 °C, unless otherwise noted

1000 100000

100
Graph to be available 10000
Graph to be available

E(av)(peak) (mJ)
IAS(peak) (A)

upon completion upon completion

of testing of testing
10 1000

1 100
0.1 1 10 100 25 50 75 100 125 150
Inductance (mH) TJ(start) (°C)

Single Pulse Avalanche Current (Peak) vs. Inductance Single Pulse Avalanche Energy (Peak) vs. TJ(start)

10

1
Graph to be available
IAR(peak) (A)

upon completion
of testing
0.1

0.01
10-4 10-3 10-2 10-1 1 10 100 1000
tav (s)
Repetitive Avalanche Current (Peak) vs. Time in Avalanche at TA = 25 °C

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THERMAL RATINGS TA = 25 °C, unless otherwise noted

10

1
Graph to be available
IAR(peak) (A)

upon completion
of testing
0.1

0.01
10-4 10-3 10-2 10-1 1 10 100 1000
tav (s)

Repetitive Avalanche Current (Peak) vs. Time in Avalanche at TA = 150 °C

Note
The characteristics shown in the six graphs
- Normalized Transient Thermal Impedance Junction to Ambient (25 °C)
- Single Pulse Avalanche Current (Peak) vs. Time in Avalanche
- Single Pulse Avalanche Current (Peak) vs. Inductance
- Single Pulse Avalanche Energy (Peak) vs. TJ (start)
- Repetitive Avalanche Current (Peak) vs. Time in Avalanche at TA = 25 °C
- Repetitive Avalanche Current (Peak) vs. Time in Avalanche at TA = 150 °C
are given for general guidelines only to enable the user to get a "ball park" indication of part capabilities. The data are extracted from single pulse
transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed
circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending
on actual application parameters and operating conditions.

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?74499.

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 Legal Disclaimer Notice
Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

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