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MJ 2955
MJ 2955
SEMICONDUCTOR
RoHS
MJ2955(PNP) RoHS
Nell High Power Products
Complementary Silicon power transistors
(15A / 60V / 115W)
TAB
Φ1.00
Φ20.00 Max.
1
30.00
38.50
2 1 2
16.85
TO-3
FEATURES 2- Φ 4.0 Thru.
Designed for general designed for general-purpose
switching and amplifier applications.
DC current gain-hFE = 20-70 @ lC = 4 Adc All dimensions in millimeters
Collector-Emitter saturation voltage-
VCE(sat) = 1.1 Vdc (Max) @ lC = 4 Adc INTERNAL SCHEMATIC DIAGRAM
Excellent safe operating area
IC Collector current 15
A
IB Base current 7
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2N3055(NPN)
SEMICONDUCTOR
RoHS
MJ2955(PNP) RoHS
Nell High Power Products
l C = 4A , V CE = 4V 20 70
h FE Forward current transfer ratio (DC current gain)
l C = 10A , V CE = 4V 5
160
140
P D , Power dissipation, (W)
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
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2N3055(NPN)
SEMICONDUCTOR
RoHS
MJ2955(PNP) RoHS
Nell High Power Products
2N3055, MJ2955
20
50µs
10 dc There are two limitations on the power handling ability of a
l C , Collector current, (A)
1ms
transistor: average junction temperature and second breakdown.
6 Safe operating area curves indicate l C -V CE limits of the transistor
that must be observed for reliable operation; i.e., the transistor
4 must not be subjected to greater dissipation than the curves
500µs indicate.
2 250µs
The data of fig.2 is based on T C = 25°C; T J(pk) is variable
depending on power level. Second breakdown pulse limits are
1 valid for duty cycles to 10% but must be derated for temperature
according to fig.1
0.6 Bonding wire limit
0.4 Thermally limited @ T C = 25°C (single pulse)
Second breakdown limit
0.2
6 10 20 40 60
2N3055(NPN) MJ2955(PNP)
500 200
V CE = 4.0V V CE = 4.0V
300 T J = 150°C
T J = 150°C
200 25°C
h FE , DC current gain
h FE , DC current gain
100
25°C
100 70 -55°C
-55°C
70
50
50
30 30
20
20
10
7.0
5.0 10
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
T J = 25°C T J = 25°C
1.6 1.6
l C = 1.0A 4.0A 8.0A l C = 1.0A 4.0A 8.0A
1.2 1.2
0.8 0.8
0.4 0.4
0 0
5.0 10 20 50 100 200 500 1000 2000 5000 5.0 10 20 50 100 200 500 1000 2000 5000
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2N3055(NPN)
SEMICONDUCTOR
RoHS
MJ2955(PNP) RoHS
Nell High Power Products
2N3055(NPN) MJ2955(PNP)
1.4 2.0
T J = 25°C T J = 25°C
1.2
1.6
1.0
Voltage, (V)
Voltage, (V)
1.2 V BE(Sat) @ l C /l B = 10
0.8 V BE(Sat) @ l C /l B = 10
V BE @ V CE = 4.0V
0.6 V BE @ V CE = 4.0V
0.8
0.4
0.4
0.2 V CE(Sat) @ l C /l B = 10
V CE(Sat) @ l C /l B = 10
0 0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
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