Databook.

fxp 1/13/99 2:09 PM Page F-48

F-48 01/99

NJ3600L Process
Silicon Junction Field-Effect Transistor

¥ Large Capacitance Detector Pre-Amplifier

S-D S-D S-D G
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig 10 mA
Operating Junction Temperature, Tj +150°C
Storage Temperature, Ts – 65°C to +175°C

Device in this Databook based on the NJ3600L Process.

Datasheet
IF3601
IF3602

G D-S D-S D-S

Die Size = 0.074" X 0.074"
All Bond Pads ≥ 0.004" Sq.
Substrate is also Gate.

At 25°C free air temperature: NJ3600L Process

Static Electrical Characteristics Min Typ Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 15 – 22 V IG = 1 µA, VDS = ØV
Reverse Gate Leakage Current IGSS 100 1000 pA VGS = 10V, VDS = ØV
Drain Saturation Current (Pulsed) IDSS 50 1000 mA VDS = 10V, VGS = ØV
Gate Source Cutoff Voltage VGS(OFF) – 0.5 –3 V VDS = 10V, ID = 1 nA

Dynamic Electrical Characteristics

Drain Source ON Resistance rds(on) 1 4 Ω ID = 1 mA, VGS = ØV f = 1 kHz
Forward Transconductance (Pulsed) gfs 750 mS VDS = 10V, VGS = ØV f = 1 kHz
Input Capacitance Ciss 650 pF VDS = 10V, VGS = ØV f = 1 kHz
Feedback Capacitance Crss 80 pF VDS = 10V, VGS = ØV f = 1 kHz
Equivalent Noise Voltage ēN 0.35 nV/√HZ VDG = 3V, ID = 5 mA f = 30 Hz

1000 N. Shiloh Road, Garland, TX 75042

(972) 487-1287 FAX (972) 276-3375 www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page F-49

01/99 F-49

NJ3600L Process
Silicon Junction Field-Effect Transistor

Drain Current as a Function of VDS

Gfs as a Function of VGS(OFF)
VGS(OFF) = Ð1.25 V
375 200
VGS = Ø V

Transconductance in mS
300
Drain Current in mA

150
VGS = –0.3 V
225
VGS = –0.6 V 100
150 VDG = 10 V, ID = 20 mA
VGS = –0.9 V
50
75
VGS = –1.2 V

0 2 4 6 8 0 – 0.4 – 0.8 – 1.2 – 1.6

Drain to Source Voltage in Volts Gate Source Cutoff Voltage in Volts

Drain Saturation Current as a Function of VGS(OFF) Gfs as a Function of IDSS

500 250
Drain Saturation Current in mA

Transconductance in mS

400
200

300
150
200 VDG = 10 V, Id = 20 mA
100
100

0 – 0.5 –1 – 1.5 –2 0 100 200 300 400

Drain Source Cutoff Voltage in Volts Drain Saturation Current in mA

Noise as a Function of Frequency Input Capacitance as a Function of VGS

0.6 1000
VDG = 3 V VDG = Ø V
Noise Voltage in nV/√Hz

Input Capacitance in pF

ID = 5 mA 800
0.4
600

400
0.2
200

10 100 1K 10K 100K 0 –4 –8 – 12 – 16

Frequency in Hz Gate Source Voltage in Volts