Solutions Manual To Accompany Electronic Devices and Circuit Theory 9th Edition 9780131189058

Solutions Manual to accompany Electronic Devices
and Circuit Theory 9th edition 9780131189058
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-and-circuit-theory-9th-edition-9780131189058/
Solutions Manual to accompany Electronic Devices and Circuit Theory 9th edition 978013118905
Chapter 616 (Odd)

1. −
3. (a) VDS  1.4 V
V 1.4 V
(b) rd = = = 233.33 
I 6 mA
(c) VDS  1.6 V
V 1.6 V
(d) rd = = = 533.33 
I 3 mA
(e) VDS  1.4 V
V 1.4 V
(f) rd = = = 933.33 
I 1.5 mA
(g) ro = 233.33 
ro 233.33  233.33 
rd = = =
10 − VGS VP  1 − (−1 V) ( − 4 V)
2 2
0.5625
= 414.81 
233.33  233.33 
(h) rd = = = 933.2 
1 − (−2 V) ( − 4 V)
2
0.25
(i) 533.33  vs. 414.81  Eq. (5.1) is valid!

933.33  vs 933.2 
5. The collector characteristics of a BJT transistor are a plot of output current versus the output
voltage for different levels of input current. The drain characteristics of a JFET transistor are
also a plot of the output current levels of input voltage. For the BJT transistor increasing
levels of input current result in increasing levels of output current. For JFETs, increasing
magnitudes of input voltage result in lower levels of output current. The spacing between a
single beta (on an approximate basis) to represent the device for the dc and ac analysis. For
JFETs, however, the spacing between the curves changes quite dramatically with increasing
levels of input voltage requiring the use of Shockley’s equation to define the relationship
between ID and VGS. VSsat and VP define the region on nonlinearity for each device. That is,
operation at voltage levels less than either quantity will result in a distorted, nonlinear
response.
172
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7. VGS = 0 V, Ib = IDSS = 12 mA
VGS = VP = −6 V, ID = 0 mA
Shockley’s equation: VGS = −1 V, ID = 8.33 mA, VGS = −2 V, ID = 5.33 mA; VGS = −3 V, ID =
3 mA; ID = 3 mA; VGS = −4 V, ID = 1.33 mA; VGS = −5 V, ID = 0.333 mA
9. (b) IDSS = 10 mA, VP = −6 V
11. (a) ID = IDSS = 9 mA
(b) ID = IDSS(1 − VGS/VP)2

= 9 mA(1 − (−2 V)/(−3.5 V))2
= 1.653 mA
(c) VGS = VP = −3.5 V, ID = 0 mA
(d) VGS < VP = −3.5 V, ID = 0 mA
13. VGS = 0 V, ID = IDSS = 7.5 mA

VGS = 0.3VP = (0.3)(4 V) = 1.2 V, ID = IDSS/2 = 7.5 mA/2 = 3.75 mA
VGS = 0.5VP = (0.5)(4 V) = 2 V, ID = IDSS/4 = 7.5 mA/4 = 1.875 mA
VGS = VP = 4 V, ID = 0 mA
15. ID = IDSS(1 − VGS/VP)2

3 mA = IDSS(1 − (−3 V)/(−6 V))2
3 mA = IDSS(0.25)
IDSS = 12 mA
PDmax 120 mW
17. VDS = VDSmax = 25 V, ID = = = 4.8 mA
VDSmax 25 V
PDmax 120 mW
ID = IDSS = 10 mA, VDS = = = 12 V
I DSS 10 mA
PDmax 120 mW
ID = 7 mA, VDS = = = 17.14 V
ID 7 mA
Figure
19. Yes, all knees of VGS curves at or below VP = 3 V.

= 9 mA(1 − (−1 V)/(−3 V)))2
= 4 mA which compares very well with the level obtained using Figure 6.25.
23. −
25. −
173
VP
27. VGS = 0 V, ID = IDSS = 12 mA; VGS = −8 V, ID = 0 mA; VGS = = −4 V, ID = 3 mA;
2
VGS = 0.3VP = −2.4 V, ID = 6 mA; VGS = −6 V, ID = 0.75 mA

ID 4 mA
IDSS = = = 11.11 mA
(1 − VGS VP ) 1 − (−2 V) ( − 5 V))
2 2
31. From Fig. 6.34, PDmax = 200 mW, ID = 8 mA

P = VI
Pmax 200 mW
and VDS = = = 25 V
I 8 mA
33. (a) ID = k(VGS − VT)2 = 0.4  10−3(VGS − 3.5)2
VGS ID
3.5 V 0
4V 0.1 mA
5V 0.9 mA
6V 2.5 mA
7V 4.9 mA
8V 8.1 mA
(b) ID = 0.8  10−3(VGS − 3.5)2
VGS ID
3.5 V 0 For same levels of VGS, ID attains
4V 0.2 mA twice the current level as part (a).
5V 1.8 mA Transfer curve has steeper slope.
6V 5.0 mA For both curves, ID = 0 mA for
7V 9.8 mA VGS < 3.5 V.
8V 16.2 mA
35. From Fig. 6.58, VT = 2.0 V

At ID = 6.5 mA, VGS = 5.5 V: ID = k(VGS − VT)2
6.5 mA = k(5.5 V − 2 V)2
k = 5.31  10−4
ID = 5.31  10−4(VGS − 2)2
37. ID = k(VGS − VT)2

ID
= (VGS − VT)2
k
ID
= VGS − VT
k
ID 30 mA
VGS = VT + =5V+
k 0.06  10−3
174
39. ID = k(VGS − VT)2 = 0.45  10−3(VGS − (−5 V)2
= 0.45  10−3(VGS + 5 V)2
VGS = −5 V, ID = 0 mA; VGS = −6 V, ID = 0.45 mA; VGS = −7 V, ID = 1.8 mA;
VGS = −8 V, ID = 4.05 mA; VGS = −9 V, ID = 7.2 mA; VGS = −10 V, ID = 11.25 mA
41. −
43. −
175
Chapter 6 (Even)
2. From Fig. 5.10:
VGS = 0 V, ID = 8 mA
VGS = −1 V, ID = 4.5 mA
VGS = −1.5 V, ID = 3.25 mA
VGS = −1.8 V, ID = 2.5 mA
VGS = −4 V, ID = 0 mA
VGS = −6 V, ID = 0 mA
4. (a) VGS = 0 V, ID = 8 mA (for VDS > VP)

VGS = −1 V, ID = 4.5 mA
ID = 3.5 mA
(b) VGS = −1 V, ID = 4.5 mA

VGS = −2 V, ID = 2 mA
ID = 2.5 mA
(c) VGS = −2 V, ID = 2 mA
VGS = −3 V, ID = 0.5 mA
ID = 1.5 mA
(d) VGS = −3 V, ID = 0.5 mA

VGS = −4 V, ID = 0 mA
ID = 0.5 mA
(e) As VGS becomes more negative the change in ID gets progressively smaller for the same
change in VGS
(g) Non-linear. Even though the change in VGS is fixed at 1 V the change in ID drops from a
maximum of 3.5 mA to a minimum of 0.5 mA—a 7:1 change in ID.
6. (a) The input current IG for a JFET is effectively zero since the JFET gate-source junction is
reverse-biased for linear operation, and a reverse-biased junction has a very high
resistance.
(b) The input impedance of the JFET is high due to the reverse-biased junction between the
gate and source.
(c) The terminology is appropriate since it is the electronic field established by the applied
gate to source voltage that controls the level of drain current. The term “field” is
appropriate due to the absence of a conductive path between gate and source (or drain).
8. For a p-channel JFET, all the voltage polarities in the network are reversed as compared to an
n-channel device. In addition, the drain current has reversed direction.
10. VGS = 0 V, ID = IDSS = 12 mA

VGS = VP = −4 V, ID = 0 mA
176
VP I
VGS = = −2 V, ID = DSS = 3 mA
2 4
VGS = 0.3VP = −1.2 V, ID = 6 mA
VGS = −3 V, ID = 0.75 mA (Shockley’s Eq.)
12. VGS = 0 V, ID = 16 mA
VGS = 0.3 VP = 0.3(−5 V) = −1.5 V, ID = IDSS/2 = 8 mA
VGS = 0.5 VP = 0.5(−5 V) = −2.5 V, ID = IDSS/4 = 4 mA
VGS = VP = −5 V, ID = 0 mA
14. (a) ID = IDSS(1 − VGS/VP)2 = 6 mA(1 − (−2 V)/(−4.5 V))2

= 1.852 mA
ID = IDSS(1 − VGS/VP)2 = 6 mA(1 − (−3.6 V)/(−4.5 V))2
= 0.24 mA
 ID   3 mA 
(b) VGS = VP 1 − = (−4.5 V) 1 −
 I  
6 mA 
 DSS  
= −1.318 V
 ID   5.5 mA 
VGS = VP 1 −  = (−4.5 V) 1 − 

 I DSS   6 mA 
= −0.192 V
16. From Fig 6.22:

−0.5 V < VP < −6 V
1 mA < IDSS < 5 mA
For IDSS = 5 mA and VP = −6 V:
VGS = 0.3VP = −1.8 V, ID = 2.5 mA
VGS = VP/2 = −3 V, ID = 1.25 mA
VGS = VP = −6 V, ID = 0 mA
For IDSS = 1 mA and VP = −0.5 V:
VGS = 0.3 VP = −0.15 V, ID = 0.5 mA
VGS = VP/2 = −0.25 V, ID = 0.25 mA
VGS = VP = −0.5 V, ID = 0 mA
Figure
18. VGS = −0.5 V, ID = 6.5 mA

2.5 mA
VGS = −1 V, ID = 4 mA
Determine ID above 4 mA line
2.5 mA x
=  x = 1.5 mA
0.5 V 0.3 V
ID = 4 mA + 1.5 mA = 5.5 mA corresponding with values determined from a purely
graphical approach.
177
20. From Fig 5.21, IDSS  9 mA
At VGS = −1 V, ID = 4 mA
ID = IDSS(1 − VGS/VP)2
ID
= 1 − VGS/VP
I DSS
VGS ID
=1−
VP I DSS
VGS −1 V
VP = =
ID 4 mA
1− 1−
I DSS 9 mA
= −3 V (an exact match)
22. (a) VDS  0.7 V @ ID = 4 mA (for VGS = 0 V)

VDS 0.7 V − 0 V
r= = = 175 
ID 4 mA − 0 mA
(b) For VGS = −0.5 V, @ ID = 3 mA, VDS = 0.7 V
0.7 V
r= = 233 
3 mA
ro 175 
(c) rd = =
(1 − VGS / VP )2 (1 − (−0.5 V)/( − 3 V)2
= 252  vs 233  from part (b)
24. The construction of depletion-type MOSFET and an enchancement-type MOSFET are

identical except for the doping in the channel region. In the depletion MOSFET the channel is
established by the doping process and exists with no gate-to-source voltage applied. As the
gate-to-source voltage increases in magnitude the channel decreases in size until pinch-off
occurs. The enhancement MOSFET does not have a channel established by the doping
sequence but relies on the gate-to-source voltage to create a channel. The larger the
magnitude of the applied gate-to-source voltage the larger the available channel.
26. At VGS = 0 V, ID = 6 mA
At VGS = −1 V, ID = 6 mA(1 − (−1 V)/(−3 V))2 = 2.66 mA
At VGS = +1 V, ID = 6 mA(1 − (+1 V)/(−3 V))2 = 6 mA(1.333)2 = 10.667 mA
At VGS = +2 V, ID = 6 mA(1 − (+2 V)/(−3 V))2 = 6 mA(1.667)2 = 16.67 mA
VGS ID
−1 V 2.66 mA I D = 3.34 mA
0 6.0 mA
I D = 4.67 mA
+1 V 10.67 mA
I D = 4.67 mA
+2 V 16.67 mA
From −1 V to 0 V, ID = 3.34 mA

while from +1 V to +2 V, ID = 6 mA − almost a 2:1 margin.
In fact, as VGS becomes more and more positive ID will increase at a faster and faster rate
due to the squared term in Shockley’s equation.
178
28. From problem 20:
VGS +1 V +1V +1 V
VP = = = =
ID 14 mA 1 − 1.473 1 − 1.21395
1= 1−
I DSS 9.5 mA
1
=  −4.67 V
−0.21395
30. From problem 14(b),

 ID   20 mA 
VGS = VP 1 −  = (−5 V) 1 − 

 I DSS   2.9 mA 
= (−5 V)(1 − 2.626) = (−5 V)(−1.626)
= 8.13 V
32. (a) In a depletion-type MOSFET the channel exists in the device and the applied voltage
VGS controls the size of the channel. In an enhancement-type MOSFET the channel is
not established by the construction pattern but included by the applied control voltage
VGS.
(b) −
(c) Briefly, an applied gate to source voltage greater than VT will establish a channel
between drain and source for the flow of charge in the output circuit.
I D (on) 4 mA
34. (a) k = = = 1 mA/V2
(V − VT ) (6 V − 4 V) 2
2
GS (on)
ID = k(VGS − VT)2 = 1  10−3(VGS − 4 V)2
(b) VGS ID For VGS < VT = 4 V, ID = 0 mA

4V 0 mA
5V 1 mA
6V 4 mA
7V 9 mA
8V 16 mA
(c) VGS ID (VGS < VT)

2V 0 mA
5V 1 mA
10 V 36 mA
ID = k (VGS (on) − VT )
2
36.
and (VGS (on) − VT ) =

ID2
k
ID
VGS (on) − VT =
k
179
ID
VT = VGS (on) −
k
3 mA
=4V− =4V− 7.5 V
0.4  10−3
= 4 V − 2.739
= 1.261 V
38. Enhancement-type MOSFET:

ID = k (VGS − VT )2
dI D  d 
= 2k (VGS − VT )  (VGS − VT ) 
dVGS  GS 1
dV 
dI D
= 2k(VGS − VT)
dVGS
Depletion-type MOSFET:
ID = IDSS(1 − VGS/VP)2
2
dI D d  VGS 
= I DSS 1 − 
dVGS dVGS  VP 
 V d  VGS 
I DSS 2 1 − GS 1 − 
 V P dVGS   VP 
=
1
−
VP
 V  1 
= 2 I DSS 1 − GS  − 
 VP  VP 
2I  V 
= − DSS  1 − GS 
VP  VP 
2 I DSS  VP  VGS 
= −   1 − 
VP  VP  VP 
dI D 2I
= DSS (VGS − VP )
dVGS VP2
dI D
For both devices = K1(VGS − K2)
dVGS
revealing that the drain current of each will increase at about the same rate.
42. (a) −
V 0.1 V
(b) For the “on” transistor: R = = = 25 ohms
I 4 mA
V 4.9 V
For the “off” transistor: R = = = 9.8 m
I 0.5  A
Absolutely, the high resistance of the “off” resistance will insure Vo is very close to 5 V.
180
Chapter 7 (Odd)
1. (a) VGS = 0 V, ID = IDSS = 12 mA
VGS = VP = −4 V, ID = 0 mA
VGS = VP/2 = −2 V, ID = IDSS/4 = 3 mA
VGS = 0.3VP = −1.2 V, ID = IDSS/2 = 6 mA
(b) Figure
(c) I DQ  4.7 mA
VDSQ = VDD − I DQ RD = 12 V − (4.7 mA)(1.2 k)
= 6.36 V
(d) I DQ = IDSS(1 − VGS/VP)2 = 12 mA(1 − (−1.5 V)/(−4 V))2

= 4.69 mA
VDSQ = VDD − I DQ RD = 12 V − (4.69 mA)(1.2 k)

= 6.37 V
excellent comparison
VDD − VD 14 V − 9 V
3. (a) I DQ = = = 3.125 mA
RD 1.6 k
(b) VDS = VD − VS = 9 V − 0 V = 9 V
 ID 
(c) ID = IDSS(1 − VGS/VP)2  VGS = VP 1 −
 I 
 DSS 
3.125 mA
VGS = (−4 V) (1 −
8 mA
= −1.5 V
VGG = 1.5 V
5. VGS = VP = −4 V
 I DQ = 0 mA
and VD = VDD − I DQ RD = 18 V − (0)(22 k)
= 18 V
 2I R I 2 R2 
7. ID = IDSS(1 − VGS/VP)2 = I DSS 1 + D S + D 2 S 
 VP VP 
 I DSS RS2  2  2 I DSS RS 
 2  ID +  − 1 I D + I DSS = 0
 VP   VP 
Substituting: 351.56 I D2 − 4.75ID + 10 mA = 0
181
− B  B 2 − 4 AC
ID = = 10.91 mA, 2.60 mA
2A
I DQ = 2.6 mA (exact match #6)
VGS = −VGSRS = −(2.60 mA)(0.75 k)
= −1.95 V vs −2 V #6
VS 1.7 V
9. (a) I DQ = IS = = = 3.33 mA
RS 0.51 k
(b) VGSQ = − I DQ RS = −(3.33 mA)(0.51 k)

 −1.7 V
(c) ID = IDSS(1 − VGS/VP)2

3.33 mA = IDSS(1 − (−1.7 V)/(−4 V))2
3.33 mA = IDSS(0.331)
IDSS = 10.06 mA
(d) VD = VDD − I DQ RD
= 18 V − (3.33 mA)(2 k) = 18 V − 6.66 V
= 11.34 V
(e) VDS = VD − VS = 11.34 V − 1.7 V

= 9.64 V
11. Network redrawn:
Figure
VGS = 0 V, ID = IDSS = 6 mA
VGS = VP = −6 V, ID = 0 mA
V
VGS = P = −3 V, ID = 3 mA
2
VGS = 0.3 VP = −1.8 V, ID = 3 mA
VGS = −IDRS = −ID(0.39k)
For ID = 5 mA, VGS = −1.95 V
Graph
From graph I DQ  3.55 mA

VGSQ  −1.4 V
(
VS = − VGSQ ) = −(−1.4 V)
= +1.4 V
182
13. ID = IDSS = 10 mA, VP = −3.5 V
VGS = 0 V, ID = IDSS = 10 mA
VGS = VP = −3.5 V, ID = 0 mA
V −3.5 V
VGS = P = = −1.75 V, ID = 2.5 mA
2 2
VGS = 0.3VP = −1.05 V, ID = 5 mA
I DQ  5.8 mA vs 3.3 mA (#12)

VGSQ  −0.85 V vs −1.5 V (#12)
Graph
(b) As RS decreases the intersection on the vertical axis increases. The maximum occurs at
ID = IDSS = 10 mA.
V 2.16 V 216 
 RSmin = G = =
I DSS 10 mA I D (mA)
15. (a) VGS = 0 V, ID = IDSS = 6 mA

VGS = VP = −6 V, ID = 0 mA
4V
VGS = 0 V, ID = = 1.818 mA
2.2 k
ID = 0 mA, VGS = 4 V
I DQ  2.7 mA
VGSQ  −2 V
Graph
(b) VDS = VDD + VSS − ID(RD + RS)

= 16 V + 4 V − (2.7 mA)(4.4 k)
= 8.12 V
VS = −VSS + IDRS = −4 V + (2.7 mA)(2.2 k)
= 1.94 V
( )
or VS = − VGSQ = −(−2 V) = +2 V
17. VGS = 0 V, ID = IDSS = 6 mA

VGS = VP = −4 V, ID = 0 mA VGS = −IDRS = −ID(0.42 k)
VGS = VP/2 = −2 V, ID = IDSS/4 = 1.5 mA ID = 4 mA, VGS = −1.72 V
VGS = 0.3VP = −1.2 V, ID = IDSS/2 = 3 mA
Graph
(b) VDS = VDD − ID(RD + RS)

= 14 V − 2.9 mA(1.2 k + 0.43 k)
= 9.27 V
183
VD = VDD − IDRD
= 14 V − (2.9 mA)(1.2 k)
= 10.52 V
19. ID = k(VGS − VT)2 VDS = VDD − ID(RD + RS) Formatted Table

I D (on) 5 mA VDD
k= = VDSS = 0 V; ID =
(VGS (on) − VTh ) 9 V RD + RS
2 2
22 V
=
1.2 k + 0.51 k
−3 0 mA Formatted: Left
V Formatted Table
−4 V 0.25 mA
−5 V 1 mA
−6 V 2.25 mA
−7 V 4 mA
−8 V 6.25 mA
1. (a) The Schottky Barrier diode is constructed using an n-type semiconductor material and a Formatted: Font: Italic
At 90%
metal contact to form the diode or 81 mV,
junction,  0.75
whilet the S
conventional p-n junction diode uses Formatted: Left, Tab stops: 1.13", Left + 1.75", Left + Not
both p- and n-type semiconductor or 9 mV,tot form
At 10%materials Sjunction.
0.05the at 1"
Formatted: Font: Italic
(b) −
3. A surge current rating is typically 20:1 or higher. For the diodes of Fig. 16.5 a 30:1 ratio or
better is typical except for the smaller and larger devices where a 10:1 and 20:1 ratio
occurred. For some the ratio is 100:1. These high levels of surge current rating are
possible because the surge currents only last for a relatively short period of time.
5. At VR = 5 V, IR  58 nA
VR = 10 V, IR  130 nA
130 nA − 58 nA Formatted: Lowered by 11 pt
% in IR =  100% = 124% increase
58 nA Formatted: Font: Bold
Extending the curves VR  25 V Formatted: Font: Bold
C (0) 80 pF Formatted: Lowered by 30 pt

7. (a) CT(VR) = =
(1 + VR VT )
n 1/ 3
 4.2 V 
1 +  Formatted: Lowered by 11 pt
 0.7 V  Formatted: Font: Bold
80 pF Formatted: Font: 8 pt
= = 41.85 pF
1.912 Formatted: Left, Space Before: 6 pt, Tab stops: 1.13", Left
+ 1.75", Left + Not at 1"
(b) k = CT(VT + VR)n Formatted: Font: Bold
= 41.85 pF(0.7 V + 4.2 V)1/3 Formatted: Font: Bold
1.698 Formatted: Font: Bold

 71  10−12 Formatted: Font: Bold
Formatted: Font: Bold
Formatted: Left, Tab stops: 1.13", Left + 1.75", Left + Not
at 1"
184
Formatted ...
Formatted ...
Formatted ...
1 1 1 Formatted ...
9. (a) fo = C= =
2 LC (2 f )2 L (2 (1.4 109 Hz) 2 (2.5 10−9 H) Formatted ...
= 5.17 pF Formatted ...
(b) Graph  5 pF Formatted ...
Formatted ...
C C  100% Formatted
11. TCC =  100%  T1 = + To ...
Co (T1 − T0 ) TCC (Co ) Formatted ...
(0.11 pF)(100) Formatted ...
= + 25
(0.02)(22 pF) Formatted ...
Formatted ...
= 50C
Formatted ...
2 fL 2 (600  106 Hz)(2.5  10−9 H) Formatted ...
13. Q= =
R 0.35  Formatted ...
= 26.93 Formatted ...
Q will drop with increase in frequency if Rs remains constant. Fig. 16.10 reveals a significant Formatted ...
drop in Q with frequency (increase). Formatted ...
15. The primary difference between the standard p-n junction diode and the tunnel diode is that Formatted ...
the tunnel diode is doped at a level from 100 to several thousand times the doping level of a
Formatted ...
p-n junction diode, thus producing a diode with a “negative resistance” region in its
characteristic curve. Formatted ...
Formatted ...
17. The heavy doping greatly reduces the width of the depletion region resulting in lower levels Formatted ...
of Zener voltage. Consequently, small levels of reverse voltage can result in a significant Formatted ...
current levels.
Formatted ...
E 2V Formatted ...
19. Isat = =  5.13 mA Formatted
R 0.39 k ...
Formatted
From graph: Stable operating points: IT  5 mA, VT  60 mV ...
IT  2.8 mA, VT = 900 mV Formatted ...
Formatted ...
 1  Rl2C Formatted ...

21. fs =   1− L Formatted
 2 LC  ...
Formatted ...
 1  (10 ) 2 (1  10−6 F) Formatted
=  1− ...
 2 (5  10−3 H)(1  10−6 F)  5  10−3 H Formatted
  ...
Formatted ...
= (2250.79 Hz)(0.9899)
 2228 Hz Formatted ...
Formatted ...

23. (a) Visible spectrum: 3750 A → 7500 Formatted ...
 Formatted ...
(b) Silicon, peak relative response  8400 A
Formatted ...
  
(c) BW = 10,300 A − 6100 A = 4200 A Formatted ...
Formatted ...
25. (a) Silicon Formatted ...
Formatted ...
185
Formatted ...
Formatted ...
 6  10−7 m  Formatted ...
(b) 1 A = 10 −10
m, −10   6000 A → orange
10 m/A Formatted ...
Formatted ...
27. (a) Extending the curve: Formatted ...
0.1 k → 1000fc, 1 k → 25fc Formatted ...
R (1 − 0.1)  103 
= = 0.92 /fc  0.9 /fc Formatted ...
f c (1000 − 25) f c Formatted ...
Formatted ...
(b) 1 k → 25fc, 10 k → 1.3fc Formatted ...
R (10 − 1)  103  Formatted
= = 379.75 /fc  380 /fc ...
f c (25 − 1.3) f c Formatted ...
Formatted ...
(c) 10 k → 1.3fc, 100 k → 0.15fc Formatted ...
R (100 − 10)  103 Formatted
= = 78,260.87 /fc  78  103 /fc ...
f c (1.3 − 0.15) f c Formatted ...
The greatest rate of change in resistance occurs in the low illumination region. Formatted ...
Formatted ...
29. 10fc → R  2 k Formatted ...
(2  10 )Vi
3
Formatted
Vo = 6 V = ...
2  103  + 5  103  Formatted ...
Vi = 21 V Formatted ...
Formatted ...
31. (a) (b)
Formatted ...
Formatted ...
Formatted ...
Formatted ...
Formatted ...
Formatted ...
Formatted ...
Formatted ...
Formatted ...
(c) Increased levels of illumination result in reduced rise and decay times. Formatted ...
Formatted ...
33. (a)  5 mW radiant flux
Formatted ...
3.5 mW
(b)  3.5 mW = 2.34  1010 lms Formatted
1.496  10−13 W/lm ...
Formatted ...
35. At IF = 60 mA,   4.4 mW Formatted ...
At 5, relative radiant intensity = 0.8 Formatted ...

(0.8)(4.4 mW) = 3.52 mW Formatted ...
Formatted ...
37. − Formatted ...
Formatted ...
Formatted ...
186
39. The LCD display has the advantage of using approximately 1000 times less power than the Formatted: Left, Indent: Left: 0", Hanging: 0.5", Tab
LED for the same display, since much of the power in the LED is used to produce the light, stops: 1.13", Left + 1.75", Left + Not at 1"
while the LCD utilizes ambient light to see the display. The LCD is usually more visible in
daylight than the LED since the sun’s brightness makes the LCD easier to see. The LCD,
however, requires a light source, either internal or external, and the temperature range of the
LCD is limited to temperatures above freezing.
41. The greatest rate of increase in power will occur at low illumination levels. At higher
illumination levels, the change in VOC drops to nearly zero, while the current continues to rise
linearly. At low illumination levels the voltage increases logarithmically with the linear
increase in current.
43. (a) (b) at 1"
(c) The curve of Io vs Pdensity is quite linear while the curve of Vo vs Pdensity is only linear in
the region near the optimum power locus (Fig 16.48).
45. No. 1 Fenwall Electronics Thermistor material.

Specific resistance  104 = 10,000  cm
 Formatted: Lowered by 11 pt
R= 2x R = 2  (10,000 ) = 20 k
A Formatted: Font: Bold
twice Formatted: Font: Bold

47. V = IR + IRunk + Vm
V = I(R + Runk) + 0 V
V Formatted: Lowered by 11 pt
Runk = − R
I
0.2 V Formatted: Lowered by 11 pt
= − 10 
2 mA
= 100  − 10 
= 90  Formatted: Font: Bold
187
Chapter 16 (Even)
2. (a) In the forward-biased region the dynamic resistance is about the same as that for a p-n Formatted: Left, Tab stops: 1.13", Left + 1.75", Left + Not
junction diode. Note that the slope of the curves in the forward-biased region is about at 1"
the same at different levels of diode current.
(b) In the reverse-biased region the reverse saturation current is larger in magnitude than
for a p-n junction diode, and the Zener breakdown voltage is lower for the Schottky
diode than for the conventional p-n junction diode.
4. 0.3x = 0.3(100 − 25) = 22.5C

T = 25C + 0.3x = 25C + 22.5C = 47.5C Formatted: Font: Bold
As indicated on the graph, at IF = 10 A, TC = −2.3 nV/C Formatted: Font: Bold
while at IF = 100 mA, TC = −0.2 mV/C Formatted: Font: Bold
Therefore, the larger temperature coefficients occur Formatted: Left, Indent: First line: 1.69", Tab stops: 1.13",
at the lower current levels. Left + 1.75", Left + Not at 1"
6. At VR = 0 V, CT  1 pF; At VR = 2 V, CT  0.67 pF
The magnitude of the change:
1 − 0.67 Formatted: Font: Bold
 100%  33% Formatted: Font: Bold
1
At VR = 8 V, CT  0.37 pF; At VR = 10 V, CT  0.35 pF
The magnitude of the change:
0.37 − 0.35 Formatted: Font: Bold
 100%  5.4% Formatted: Font: Bold
0.37
Formatted: Lowered by 13 pt
33%: 5.4% = 6.1:1, which is a significant difference in sensitivity to change in voltage. Formatted: Font: Bold
8. (a) At −3 V, C = 40 pF Formatted: Font: Bold
At −12 V, C = 20 pF Formatted: Font: Bold
C = 40 pF − 20 pF = 20 pF Formatted: Font: Bold
C 40 pF
(b) At −8 V, = = 2 pF/V Formatted: Font: Bold
VR 20 V
C 60 pF Formatted: Lowered by 14 pt
At −2 V, = = 6.67 pF/V
VR 9V Formatted: Font: Bold
C Formatted: Lowered by 14 pt
increases at less negative values of VR.
VR Formatted: Left, Indent: Left: 0", Hanging: 0.5", Tab
stops: 1.13", Left + 1.75", Left + Not at 1"
30 pF Formatted: Lowered by 14 pt
10. C(3 V) = 30 pF C3/C25 = =6
5 pF Formatted: Font: Bold
C(25 V) = 5 pF
min typ. max Formatted: Font: Not Italic
Fig 16.9: C3/C25 5.0 5.7 6.5 Formatted: Left, Tab stops: 1.13", Left + 1.75", Left + Not
Center of typical values at 1"
188
12. Greatest change in capacitance per volt appears to be between 0 and 2−3 volts of reverse bias Formatted: Left, Indent: Left: 0", Hanging: 0.5", Tab
voltage. stops: 1.13", Left + 1.75", Left + Not at 1"
C(0−2 V)  25 pF Formatted: Font: Bold

C (5−10 V)  10 pF Formatted: Left, Tab stops: 1.13", Left + 1.75", Left + Not
at 1"
14. High-power diodes have a higher forward voltage drop than low-current devices due to larger Formatted: Font: Bold
IR drops across the bulk and contact resistances of the diode. The higher voltage drops result Formatted: Left, Indent: Left: 0", Hanging: 0.5", Tab
in higher power dissipation levels for the diodes, which in turn may require the use of heat stops: 1.13", Left + 1.75", Left + Not at 1"
sinks to draw the heat away from the body of the structure. Formatted: Font: Italic
1 1 at 1"
16. At 1 MHz: XC = =
2 fC 2 (1 106 Hz)(5  10−12 F) Formatted: Lowered by 14 pt
= 31.83 k Formatted: Font: Bold

1 Formatted: Lowered by 14 pt
At 100 MHz: XC =
2 (100  106 Hz)(5 10−12 F)
= 318.3  Formatted: Font: Bold
At 1 MHz: X LS = 2fL = 2(1  106 Hz)(6  10−9 H) Formatted: Lowered by 7 pt

At 100 MHz: X LS = 2(100  106 Hz)(6  10−9 H) Formatted: Lowered by 7 pt

Ls effect is negligible! Formatted: Font: Bold
R and C in parallel:
f = 1 MHz at 1"
(152 180)(31.83 k − 90) Formatted: Lowered by 14 pt

ZT =
−152  − j31.83 k
= −152.05 0.27  −152 0
f = 100 MHz
(152 180)(318.3 − 90) Formatted: Lowered by 14 pt
ZT =
−152  − j 318.3
= −137.16 25.52  −152 0
At very high frequencies XC has some impact!
189
18. At VT = 0.1 V,
IF  5.5 mA
At VT = 0.3 V
IF  2.3 mA
V 0.3 V − 0.1 V Formatted: Lowered by 11 pt

R= =
I 2.3 mA − 5.5 mA
0.2 V Formatted: Lowered by 14 pt
= = −62.5 
−3.2 mA Formatted: Font: Bold
E 0.5 V Formatted: Font: Bold

20. Isat = = = 9.8 mA
R 51  Formatted: Font: Not Italic
Draw load line on characteristics. Formatted: Lowered by 11 pt
v (6.624  10−34 J  s)(3  108 m/s) Formatted: Lowered by 14 pt

22. W = hf= h =
 (5000)(10−10 m)
= 3.97  10−19 J Formatted: Font: Bold
 1 eV  Formatted: Font: Bold
3.97  10−19 J  −19 
= 2.48 eV
1.6  10 J  Formatted: Font: Bold
4  10−9 W/m 2 Formatted: Font: Bold

24. = 2,486 fc
1.609  10−12 Formatted: Lowered by 13 pt
From the intersection of VA = 30 V and 2,486 fc we find Formatted: Lowered by 11 pt

I  440 A Formatted: Font: Italic, Subscript
Formatted: Subscript
26. Note that V is given and not V. Formatted: Font: Bold
At the intersection of V = 25 V and 3000fc we find I  500 A and Formatted: Font: Bold
VR = IR = (500  10−6 A)(100  103 ) = 50 V
28. The “dark current” of a photodiode is the diode current level when no light is striking the Formatted: Subscript
diode. It is essentially the reverse saturation leakage current of the diode, comprised mainly Formatted: Subscript
of minority carriers. Formatted: Font: Bold
Formatted: Left, Indent: Left: 0", Hanging: 0.5", Tab
at 1"
190
30. Except for low illumination levels (0.01fc) Formatted: Subscript
the % conductance curves appear above the
100% level for the range of temperature. In
addition, it is interesting to note that for
other than the low illumination levels the %
conductance is higher above and below
room temperature (25C). In general, the %
conductance level is not adversely affected
by temperature for the illumination levels
examined.
at 1"
  Formatted: Font: 8 pt
32. The highest % sensitivity occurs between 5250A and 5750A. Fig 16.20 reveals that the CdS
unit would be most sensitive to yellow. The % sensitivity of the CdS unit of Fig. 16.30 is at Formatted: Font: 8 pt
 
the 30% level for the range 4800A → 7000A. This range includes green, yellow, and orange Formatted: Font: 8 pt
in Fig. 16.20. Formatted: Font: 8 pt
34. (a) Relative radiant intensity  0.8. stops: 1.13", Left + 1.75", Left + Not at 1"
(b)
Formatted: Font: 8 pt
at 1"
36. 6, 7, 8
38. The LED generates a light source in response to the application of an electric voltage. The Formatted: Left, Indent: Left: 0", Hanging: 0.5", Tab
LCD depends on ambient light to utilize the change in either reflectivity or transmissivity stops: 1.13", Left + 1.75", Left + Not at 1"
caused by the application of an electric voltage.
Pmax Formatted: Lowered by 16 pt

40. % =  100%
( Acm2 )(100 mW/cm 2 )
Pmax Formatted: Lowered by 14 pt
9% =  100%
(2 cm2 )(100 mW/cm2 )
Pmax = 18 mW Formatted: Font: Bold
191
42. (a) Fig. 16.48  79 mW/cm2 Formatted: Font: Bold
(b) It is the maximum power density available at sea level.
(c) Fig. 16.48  12.7 mA Formatted: Font: Bold
44. Since log scales are present, the differentials must be as small as possible.
R (7000 − 1000) 6000  Formatted: Lowered by 14 pt

= = = 150 /C
T (40 − 0) 40
R (3 − 1) 2  Formatted: Lowered by 11 pt

= = = 0.05 /C
T 40 40
From the above 150 /C: 0.05 /C = 3000:1

Therefore, the highest rate of change occurs at lower temperatures such as 20C.
46. (a)  10−5 A = 10 A Formatted: Font: Bold

(b) Power  0.1 mW, R  107  = 10 M Formatted: Font: Bold
(c) Log scale  0.3 mW
192
Chapter 17 (Odd)
1. −
3. −
5. (a) Yes
(b) No
(c) No. As noted in Fig. 17.8b the minimum gate voltage required to trigger all units is 3 V.
(d) VG = 6 V, IG = 800 mA is a good choice (center of preferred firing area).

VG = 4 V, IG = 1.6 A is less preferable due to higher power dissipation in the gate. Not in Formatted: Left, Tab stops: 1.13", Left + 1.75", Left + Not
preferred firing area. at 1"
7. The smaller the level of R1, the higher the peak value of the gate current. The higher the peak stops: 1.13", Left + 1.75", Left + Not at 1"
value of the gate current the sooner the triggering level will be reached and conduction
initiated.
9. −
11. (a)  0.7 mW/cm2 Formatted: Font: Bold

(b) 0C → 0.82 mW/cm2
100C → 0.16 mW/cm2
0.82 − 0.16 Formatted: Lowered by 11 pt
 100%  80.5%
0.82 Formatted: Font: Bold
13. −
15. − Formatted: Lowered by 16 pt
RB1 2 k
17. (a)  =  0.65 = RB2 = 1.08 k Formatted: Font: Bold
RB1 + RB2 2 k + RB2 Formatted: Font: Bold
I E =0
(
(b) RBB = RB1 + RB2 ) I E =0
= 2 k + 1.08 k = 3.08 k
(c) VRB = VBB = 0.65(20 V) = 13 V Formatted: Lowered by 8 pt
1
(d) VP = VBB + VD = 13 V + 0.7 V = 13.7 V Formatted: Font: Bold

19. IB = 25 A Formatted: Font: Bold
IC = h fe I B = (40)(25 A) = 1 mA Formatted: Font: Bold
193
I Formatted: Lowered by 11 pt
21. (a) DF =
T
0.95 − 0 0.95 Formatted: Lowered by 14 pt
= = = 1.26%/C
25 − (−50) 75 Formatted: Font: Bold
(b) Yes, curve flattens after 25C. Formatted: Font: Bold
Io IC 20 mA Formatted: Lowered by 14 pt
23. = = = 0.44
I i I F  45 mA Formatted: Font: Bold
Yes, relatively efficient.
25. (a) IC  3 mA Formatted: Font: Bold
(b) At IC = 6 mA; RL = 1 k, t = 8.6 s

RL = 100 ; t = 2 s
1 k:100  = 10:1
8.6 s:2 s = 4.3:1
R:t  2.3:1 Formatted: Font: Bold
VP 8.7 V Formatted: Lowered by 14 pt

27. VP = 8.7 V, IP = 100 A ZP = = = 87 k ( open)
I P 100  A Formatted: Font: Bold
V 1V Formatted: Lowered by 14 pt
VV = 1 V, IV = 5.5 mA ZV = V = = 181.8  (relatively low)
IV 5.5 mA
87 k: 181.8  = 478.55:1  500:1 Formatted: Font: Bold
29. (a) Minimum VBB:

V − VP Formatted: Lowered by 14 pt
Rmax = BB  20 k
IP
VBB − (VBB + VD ) Formatted: Lowered by 14 pt
= 20 k
IP
VBB − VBB − VD = IP 20 k
VBB(1 − ) = IP 20 k + VD Formatted: Font: 6 pt
I 20 k + VD Formatted: Font: 6 pt
VBB = P
1 − Formatted: Lowered by 13 pt
(100  A)(20 k) + 0.7 V
= Formatted: Lowered by 11 pt
1 − 0.67
= 8.18 V
10 V OK Formatted: Font: Bold
V − V 12 V − 1 V Formatted: Lowered by 14 pt
(b) R < BB V = = 2 k
IV 5.5 mA Formatted: Font: Not Italic
R < 2 k Formatted: Font: Bold

194
 RB  Formatted: Font: Italic
(c) T  RC loge 1 + 1 
 RB  Formatted: Lowered by 16 pt
 2 
 10 k  Formatted: Font: Italic

2  10−3 = R(1  10−6)loge 1 + 
 5 k  Formatted: Lowered by 13 pt
loge3 = 1.0986
−3
2  10 Formatted: Lowered by 14 pt
R=
(1  10−6 )(1.0986)
R = 1.82 k Formatted: Font: Bold
195
Chapter 17 (Even)
Formatted: Indent: Left: 0", Hanging: 0.5", Tab stops:
2. − 1.13", Left + 1.75", Left + Not at 1"
4. (a) p-n junction diode
(b) The SCR will not fire once the gate current is reduced to a level that will cause the Formatted: Left, Tab stops: 1.13", Left + 1.75", Left + Not
forward blocking region to extend beyond the chosen anode-to-cathode voltage. In at 1"
general, as IG decreases, the blocking voltage required for conduction increases.
(c) The SCR will fire once the anode-to-cathode voltage is less than the forward blocking stops: 1.13", Left + 1.75", Left + Not at 1"
region determined by the gate current chosen. Formatted: Left, Tab stops: 1.13", Left + 1.75", Left + Not
at 1"
(d) The holding current increases with decreasing levels of gate current. Formatted: Left, Indent: Left: 0", Hanging: 0.5", Tab
6. In the conduction state, the SCR has characteristics very similar to those of a p-n junction
diode (where VT = 0.7 V).
 V (rms)  Formatted: Lowered by 13 pt

8. (a) VP =  sec  2
 2 
=
117 V
2
( )
2 = 82.78 V
VDC = 0.636(82.78 V)
= 52.65 V Formatted: Font: Bold
(b) VAK = VDC − VBatt = 52.65 V − 11 V = 41.65 V Formatted: Font: Bold
(c) VR = VZ + VGK
= 11 V + 3 V
= 14 V
At 14 V, SCR2 conducts and stops the charging process.
(d) At least 3 V to turn on SCR2.
1 1 Formatted: Lowered by 11 pt
(e) V2  VP = (82.78 V) = 41.39 V
10. (a) Charge toward 200 V but will be limited by the development of a negative voltage Formatted: Left, Tab stops: 1.13", Left + 1.75", Left + Not
( )
VGK = VZ − VC1 that will eventually turn the GTO off. at 1"
(b)  = R3C1 = (20 k)(0.1 F) stops: 1.13", Left + 1.75", Left + Not at 1"
= 2 ms Formatted: Font: Not Italic
5 = 10 ms Formatted: Font: Italic
1
(c) 5  = (5 ) = 5 ms = 5RGTO C1 Formatted: Lowered by 3 pt
2
196
5 ms 5 ms  1  Formatted: Lowered by 14 pt
RGTO = = = 10 k  = (20 k − above) 
5C1 5(0.1 10−6 F)  2  Formatted: Font: Bold
12. VC = VBR + VGK = 6 V + 3 V = 9 V
VC = 40(1 − e−t/RC) = 9 Formatted: Lowered by 13 pt
40 − 40e−t/RC = 9
40e−t/RC = 31
e−t/RC = 31/40 = 0.775
RC = (10  103 )(0.2  10−6 F) = 2  10−3 s Formatted: Font: Not Italic
loge(e−t/RC) = loge 0.775 Formatted: Font: Italic
−t/RC = −t/2  10−3 = −0.255 Formatted: Font: 14 pt
and t = 0.255(2  10−3) = 0.51 ms Formatted: Font: Not Italic
14. VBR1 = VBR2  10% VBR2
= 6.4 V  0.64 V  5.76 V → 7.04 V Formatted: Lowered by 7 pt
V − VP
16. > R1 Formatted: Font: Bold
IP
40 V − [0.6(40 V) + 0.7 V] Formatted: Font: Bold
= 1.53 M > R1
10  10−6 Formatted: Lowered by 14 pt
V − VV 40 V − 1 V Formatted: Lowered by 11 pt
< R1  = 4.875 k < R1
IV 8 mA Formatted: Font: Bold
1.53 M > R1 > 4.875 k Formatted: Font: Bold

RB1 Formatted: Lowered by 11 pt
18. (a)  =
RBB Formatted: Font: Bold
I E =0
RB1
0.55 = Formatted: Font: Bold
10 k Formatted: Font: Bold
RB! = 5.5 k Formatted: Font: Bold
RBB = RB! + RB2 Formatted: Lowered by 17 pt

10 k = 5.5 k + RB2
RB2 = 4.5 k Formatted: Font: Bold
(b) VP = VBB + VD = (0.55)(20 V) + 0.7 V = 11.7 V Formatted: Lowered by 7 pt
V − VP 20 V − 11.7 V
(c) R1 < = = 166 k Formatted: Lowered by 7 pt
Ip 50  A Formatted: Font: Bold
ok: 68 k < 166 k Formatted: Font: Bold
197
V − VV 18.8 Formatted: Font: Italic
(d) t1 = R1C loge = (68  103)(0.1  10−6) loge = 5.56 ms
V − VP 8.3 Formatted: Lowered by 14 pt
Formatted: Subscript
VP 11.7
t2 = ( RB1 + R2 ) C loge = (0.2 k + 2.2 k)(0.1  10−6) loge Formatted: Lowered by 11 pt
VV 1.2
= 0.546 ms
T = t1 + t2 = 6.106 ms
1 1
f= = = 163.77 Hz Formatted: Font: Italic
T 6.106 ms
(e) Formatted: Lowered by 11 pt

(f)
R2V 2.2 k(20 V) Formatted: Lowered by 14 pt
VR2 = =
R2 + RBB 2.2 k + 10 k
R (V − 0.7 V) Formatted: Lowered by 16 pt
VR2  2 P
R2 + RB1
2.2 k(11.7 V − 0.7 V) Formatted: Lowered by 11 pt
=
2.2 k + 0.2 k
(g) f  = = 184.16 Hz
R1C log e (1/(1 −  )) (6.8 k)(0.1  F)loge 2.22 Formatted: Font: Bold
difference in frequency levels is partly due to the fact that t2  10% of t1.
20.
198
22. (a) At 25C, ICEO  2 nA
At 50C, ICEO  30 nA
I CEO (30 − 2)  10−9 A 28 nA Formatted: No underline
= = = 1.12 nA/C
T (50 − 25)C 25C Formatted: Lowered by 14 pt
ICEO (35C) = ICEO(25C) + (1.12 nA/C)(35C − 25C)
= 2 nA + 11.2 nA Formatted: Font: Bold
= 13.2 nA Formatted: Font: Bold
From Fig. 17.55 ICEO (35C)  4 nA Formatted: Font: Bold
Derating factors, therefore, cannot be defined for large regions of non-linear curves.
Although the curve of Fig. 17.55 appears to be linear, the fact that the vertical axis is a at 1"
log scale reveals that ICEO and T( C) have a non-linear relationship.
24. (a) PD = VCEIC = 200 mW

PD 200 mW Formatted: Lowered by 16 pt
IC = = = 6.67 mA @ VCE = 30 V
VCEmax 30 V
VCE = = = 20 V @ IC = 10 mA
IC 10 mA
IC = = = 8.0 mA @ VCE = 25 V
VCE 25 V
Almost the entire area of Fig. 17.57 falls within the power limits.
IC 4 mA I 4 mA Formatted: Font: Not Italic

(b) dc = = = 0.4, Fig. 17.56 C  = 0.4
I F 10 mA IF 10 mA Formatted: Lowered by 14 pt
The fact that the IF characteristics of Fig. 17.57 are fairly horizontal reveals that the level Formatted: Lowered by 14 pt
of IC is somewhat unaffected by the level of VCE except for very low or high values. Formatted: Lowered by 11 pt
Therefore, a plot of IC vs. IF as shown in Fig. 17.56 can be provided without any Formatted: Font: Bold
reference to the value of VCE. As noted above, the results are essentially the same.
3RB2 3 Formatted: Font: Bold
26. = = = 0.75, VG = VBB = 0.75(20 V) = 15 V
3RB2 + RB2 4 Formatted: Font: Bold
 VBB   VBB 
28. Eq. 17.23: T = RC loge   = RC log e   Formatted: Lowered by 2 pt
 BB
V − VP   BB
V − ( VBB + VD 
)
  Formatted: Lowered by 15 pt
 
 VBB   1  Formatted: Font: Italic
Assuming VBB VD, T = RC loge   = RC loge(1/1− ) = RC loge 
 VBB (1 −  )  RB1  Formatted: Font: Italic
 1 − 
 RB1 + RB2 
Formatted: Left, Indent: Left: 0", Hanging: 0.5", Right:
 RB + RB2   RB  -0.13", Tab stops: 1.13", Left + 1.75", Left + Not at 1"
= RC loge  1  = RC log e 1 + 1  Eq. 17.24
 RB   RB  Formatted: Font: Italic
 2   2 
199
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Chapter 616 (Odd)

3. (a) VDS  1.4 V

(c) VDS  1.6 V

(e) VDS  1.4 V

(i) 533.33  vs. 414.81  Eq. (5.1) is valid!

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9. (b) IDSS = 10 mA, VP = −6 V

11. (a) ID = IDSS = 9 mA

(b) ID = IDSS(1 − VGS/VP)2

(c) VGS = VP = −3.5 V, ID = 0 mA

(d) VGS < VP = −3.5 V, ID = 0 mA

13. VGS = 0 V, ID = IDSS = 7.5 mA

15. ID = IDSS(1 − VGS/VP)2

19. Yes, all knees of VGS curves at or below VP = 3 V.

21. ID = IDSS(1 − VGS/VP)2

29. ID = IDSS(1 − VGS/VP)2

31. From Fig. 6.34, PDmax = 200 mW, ID = 8 mA

33. (a) ID = k(VGS − VT)2 = 0.4  10−3(VGS − 3.5)2

(b) ID = 0.8  10−3(VGS − 3.5)2

35. From Fig. 6.58, VT = 2.0 V

37. ID = k(VGS − VT)2

4. (a) VGS = 0 V, ID = 8 mA (for VDS > VP)

(b) VGS = −1 V, ID = 4.5 mA

(d) VGS = −3 V, ID = 0.5 mA

10. VGS = 0 V, ID = IDSS = 12 mA

14. (a) ID = IDSS(1 − VGS/VP)2 = 6 mA(1 − (−2 V)/(−4.5 V))2

16. From Fig 6.22:

18. VGS = −0.5 V, ID = 6.5 mA

22. (a) VDS  0.7 V @ ID = 4 mA (for VGS = 0 V)

24. The construction of depletion-type MOSFET and an enchancement-type MOSFET are

From −1 V to 0 V, ID = 3.34 mA

30. From problem 14(b),

ID = k(VGS − VT)2 = 1  10−3(VGS − 4 V)2

(b) VGS ID For VGS < VT = 4 V, ID = 0 mA

(c) VGS ID (VGS < VT)

and (VGS (on) − VT ) =

38. Enhancement-type MOSFET:

(d) I DQ = IDSS(1 − VGS/VP)2 = 12 mA(1 − (−1.5 V)/(−4 V))2

VDSQ = VDD − I DQ RD = 12 V − (4.69 mA)(1.2 k)

(b) VGSQ = − I DQ RS = −(3.33 mA)(0.51 k)

(c) ID = IDSS(1 − VGS/VP)2

(e) VDS = VD − VS = 11.34 V − 1.7 V

11. Network redrawn:

From graph I DQ  3.55 mA

I DQ  5.8 mA vs 3.3 mA (#12)

15. (a) VGS = 0 V, ID = IDSS = 6 mA

(b) VDS = VDD + VSS − ID(RD + RS)

17. VGS = 0 V, ID = IDSS = 6 mA

(b) VDS = VDD − ID(RD + RS)

19. ID = k(VGS − VT)2 VDS = VDD − ID(RD + RS) Formatted Table

Extending the curves VR  25 V Formatted: Font: Bold

C (0) 80 pF Formatted: Lowered by 30 pt

1.698 Formatted: Font: Bold

 1  Rl2C Formatted ...

At 5, relative radiant intensity = 0.8 Formatted ...

45. No. 1 Fenwall Electronics Thermistor material.

twice Formatted: Font: Bold

4. 0.3x = 0.3(100 − 25) = 22.5C

C(0−2 V)  25 pF Formatted: Font: Bold

= 31.83 k Formatted: Font: Bold