Solutions Manual to accompany Industrial

Electronics 9780132064187

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Solutions Manual to accompany Industrial Electronics 9780132064187

Chapter 5 - Questions

1. Career choice of student

2. Gate triggering, exceeding the breakdown voltage, excessive leakage current, and

exceeding the dv/dt rating

3. Protect the SCR from false dv/dt triggering

4. Shockley diode, diac, UJT or PUT

5. Gating -- UJT has gating with respect to the cathode and PUT has gating with

respect to the anode. Triggering -- UJT has triggering fixed by internal resistors

and PUT has triggering adjustable by external resistors

6. Ratio of internal resistors or voltages

7. Less gate trigger voltage needed for higher temperatures

8. The transistor model provides some insight into the internal workings of the triac.

With the MT2 terminal positive with respect to the MT1 terminal and no gate

trigger, the current flow is only the reverse leakage current between the main

terminals. When a positive pulse is applied to the gate, Q3 and Q4 (the internal

SCR) would turn on and Q1 and Q2 (the complementary internal SCR) would

remain off. When the gate signal goes to zero volts, Q3 and Q4 remain latched on

as in a SCR. Now if MT2 is negative with respect to MT1 and another pulse is

applied to the gate, the reverse happens -- Q1 and Q2 turns on, and Q3 and Q4

are off.

9. Conduction angle is the number of degrees an SCR is on, firing angle is the angle at

which an SCR turns on, and the firing delay angle is the angle a SCR is off before

it turns on and is equal to the firing angle.

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10. Quadrant 1 -- MT2 is positive with respect to MT1 and the gate polarity is positive.

Quadrant 2 -- MT2 is positive with respect to MT1 and the gate polarity is negative.

Quadrant 3 -- MT2 is negative with respect to MT1 and the gate polarity is

negative. Quadrant 4 -- MT2 is negative with respect to MT1 and the gate polarity

is positive

11. Schematic symbol:

It does not conduct until its breakover voltage is exceeded.

12. More gate trigger current is required

13. It's the ratio of a change of voltage to a change of time

14. Limits the rate of change of voltage applied to the anode-cathode of the SCR.

15. Intrinsic standoff ratio is determined by internal resistors for a UJT and by external

resistors for a PUT.

16. Triac controls current in both direction and a SCR controls current in only one

direction

17. First and third

18. If current is injected into the gate terminal, a flow of base current in Q2 occurs. The

conduction path for this current is through the base-emitter junction of Q2, thus

causing Q2 to turn on. This initial conduction induces current flow through the

base-emitter junction of Q1, thus causing current flow from the anode to the

cathode of the SCR. Since the base current is flowing in Q1, this transistor rapidly

switches on, with its collector current now functioning as the base current of Q2.

Also, the base current induced in Q1 becomes the collector current of Q2.
 Therefore, the current into the gate terminal may be removed, and current

continues to flow. Regeneration has occurred. The on-state current is limited by

external circuit impedance and continues to flow until the current drops below a

sustaining value called the holding current.

19. Both are three terminal devices and both are switches. The BJT can operate in the

active region and the UJT cannot

20. Diac

21. Higher current

22. Negates the effect of widely varying values of gate current

23. Silicon controlled switch

24. Two gate inputs

25. Current can flow in both directions

26. Protects a power supply from overvoltage

27. Zero point switching is a technique whereby the control device is gated on at the

instant the sine wave input voltage goes through zero. This technique minimizes

EMI, electromagnetic interference due to turn-on and switching transients

28. Triacs in phase-controlled circuits fire sooner because the capacitor is not fully

discharged

29. Turn on characteristics are the same and the GCS can turn off with a negative gate

voltage and the SCR cannot

30. Both are labeled A, K and G, but the SCS has two gates

31. 90 degrees

32. On-off behavior

33. Silicon controlled switch (SCS)

34. Symmetrical triggering diode and bilateral trigger diode

35. Excellent temperature stability and symmetrical triggering

36. The silicon-bilateral switch (SBS) is a solid state breakover device, which produces

a triggering pulse in both the positive and negative direction.

37. They both have two anodes

38. The gate terminal can be used to alter the breakover point

39. Because a triac can conduct in both directions, it only has brief interval during which

the sine wave current is passing through zero to recover and revert to its blocking

state. For this reason, the most reliable operation of triacs is in low frequency

operation

Chapter 5 - Data Sheet Questions

1. +125 degrees

2. Case configuration

3. 3

4. 100 volts

5. 50 mA

6. Value of VDRM

7. Value of VDRM

8. 75 mA

9. 10 a

10. 2 s

Chapter 5 - Problems
1. Figure 5-52 is a resistive-capacitor control circuit for an SCR

Minimum time control:

(R1 + 0) x (0.47x10-6) = 1 X 10-3. Therefore, R1 = 2.13 k

Maximum time control

(2.13 k + R2) x (0.47x10-6) = 30 X 10-3. Therefore, R2 = 61.7 k

2. Voltage across the SCR is the shaded area of upper waveform and voltage across

the load is the shaded area in the lower waveform

3. Voltage across the SCR is the shaded area of the upper waveform and voltage

across the load is the shaded area in the lower waveform

4. VP = VBB +VEB = 0.5 x 20 + 0.6 = 10.6

IC = ((R1VBB / (R1 + R2)) - VBE) / R3

 IC = ((6.5 x 20 / (6.5 + 20)) - 0.7) / 3 = 1.4 mA

dv/dt = IC / C1

dv/dt = 1.4 x 10-3/ 0.47 x 10-6

dv/dt = 3 x 103 V/s

T = VP / (dv/dt)

T = 10.6V / 3 x 103 V/s

T = 3.5 ms

Ø / 3.5 ms = 360 / 16.67 ms

Ø =75.6 degrees

5. 100 / T = 360 / 16.67 ms, Therefore, T = 4.63

dv/dt = 10.6 / 4.63 = 2.29 V/ms

dv/dt = IC / C1

2.29 x 103 = IC /0.47 x 10-6. Therefore, IC = 1.08 mA

IC = ((R1VBB / (R1 + R2)) - VBE) / R3

1.08 mA = ((6.5 k x 20V / (6.5 k+ R2)) - 0.7V) / 3 k

(1.08 x 3) +0.7 = 130 / (6.5 +R2). Therefore, R2 = 26.5 k

6. VP =  x VBB +VEB = 0.6 x 20 + 0.6 = 12.6

IC = 1.4 mA

dv/dt = 3 x 103 V/s

T = VP / (dv/dt)

T = 12.6V / 3 x 103 V/s

T = 4.2 ms

Ø / 4.2 ms = 360 / 16.67 ms

 Ø = 90.7 degrees

7. C1 would be increased, which would make dv/dt greater, thus yielding a lower firing

angle

8. R1MAX = (VBB -Vp) / Ip = (20 - 14.5) / 500 = 11k

R1MIN = (VBB -VV) / IV = (20 - 3.5) / 6 = 2.75k

9. VT =  x VBB + 0.6 = 0.6 x 20 + 0.6 = 12.6

10. T = R1C1 (ln 1/1-) = (6.875K) (0.1F) (ln 1/1-0.6) = 6.3 ms

f = 1 / T = 159 Hz

11. V = (VGT(MAX) +VCR1 ) + [(IGT(MAX) + IR3 ) x (R1 + R2)]

V= (0.7V + 0.7V) + [(0.2mA + 2mA) X (2.2 k + 30 k)]

V = 72.2 volts

Sine Ø = 72.2 / 162.6 = 0.444

Ø = 26.4 degrees

12. rBB = 4.7 + 5.1 = 9.8 and  = 4.7 / 9.8 = 0.48

13.  = 20 / (10 + 20) = 0.67

14. IR3 = 10 x 1mA = 10 mA, and R3 = 1.6 / 10 = 160 

The diode CR1 inhibits gate current flow except only during the positive half-cycle,

thereby preventing the development of negative gate voltage and current. The

resistor R3 is a shunt resistor, negating the effect of widely varying values of gate

current.

15. This shunting action is accomplished by ensuring the value of the current through R3

is at least ten times the maximum gate-trigger current.

16. VT = Sine Ø x VIN(peak)

Solutions Manual to accompany Industrial Electronics 9780132064187

Sine Ø = XC1 / (R1 + R2)

XC1 = 1 / 2pi x f x C1 = 1 / 2 x 3.14 x 60 x 0.47 = 5.64 k

Sine Ø = 5.64 / 50.39 = 0.112

VT = 0.112 x 162.62 = 18.2V

17. No, because the VT is less than the breakover voltage of the diac, which is 30.

18. VT = Sine Ø x VIN(peak)

31 = Sine Ø x 162.62. Therefore, Sine Ø = 0.191

0.191 = 5.64 / (R1 + 390). Therefore, R1 = 29.2 k

19. Sine Ø = 0.191. Therefore, Ø = 11 degrees

Firing angle = 90 - 11 = 78 degrees

20. The triac fires at 168 degrees (78 + 90) because the RC network provides a 90-

degree phase shift and similarly, at 348 degrees on the second half cycle

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