1

1 Theoretical framework
2
3 In this work, the tunneling properties of electron across the mismatch of tilted Dirac cone is
4 investigated. The proposed structure is depicted in Fig. 1, consisting of 2-dimensional Dirac
5 material n-p-n heterojunctions with different tilted Dirac cone. To achieve such a device structure,
6 the top gate is placed in the middle region of length L to tune the Fermi energy level, which can be
7 realized by depositing Ti/Au using standard electron beam lithography [Huard2007]. Electrostatic
8 doping using ionic-liquid gate also has been demonstrated which enhanced the carrier mobility
9 [Perera2013]. For the barrier profile, we use rectangular potential U ( x )=U [Θ ( x ) −Θ(x−L)] . We
10 assume that the electron propagations are coherent and not affected by ohmic contact due to the
11 heterogeneity of the junctions. We also neglect the intervalley scattering between K and K ' in the
12 Brillouin zone. Since the low-energy quasiparticles in Dirac material mimics relativistic particle.
13 Hence, it can be described by effective massless Dirac Hamiltonian as follows,
14
15 ^
H=ℏ (v ¿ ¿ F σ . k +w σ 0 . k )+U σ 0 ¿ (1)
16
17 where U is barrier height, v F =106ms-6 is Fermi velocity, k =(k x , k y ) is wave vector in x-y plane,
18 σ =(σ x , σ y ) is Pauli matrices, σ 0 is a 2 ×2 identity matrix, and w=(w x , w y ) is the parameter with
19 dimension of velocity denoting the tilt of Dirac cone. We assume that the Dirac cone only tilted in
20 y-direction. Therefore, the corresponding eigen-energy of Eq. 1 can be written as,
21
Eη =ℏ(η √ k x v x +k y v y + k y w y )+ U
2 2 2 2
22 (2)
23
24 where η is band index. Since the tilt of Dirac cone determines the shape of Fermi surface in which
25 the wave vector k is directional dependent. In order to see the form of wave vector under the effect
26 of tilted Dirac cone, Eq.2 is rearranged into,
27
k 2x
28 +¿ ¿ (3)
k 2a
29 where
30
(E−U ) w y
31 k a=¿ ¿ , k b=η2 v 2y ¿ ¿, k c = 2 2 2 .
ℏ (η v y −w y )
32
33 The angular-dependent wave vector is given by,
34
2
k b (1−w0 ) E−U
35 k= = (4)
1−w 0 sin ϕ η ℏ v F (1−w0 sin ϕ )
36
k c wy
37 where w 0= = is the eccentricity of the Fermi surface and equivalent to the tilted parameter
kb η v y
38 of the Dirac cone. η here indicate that the valence and conduction band always tilt in the opposite
39 direction. Eq. 4 clearly depends on propagation direction for nonzero tilted parameter since the
40 Fermi surface is elliptical with doping. This angular-dependent property is vanished when the tilted
41 parameter is zero. Hence, we retrieved back the isotropic wave vector which commonly found in
42 type-I non-tilted Dirac material such as graphene. Since we consider the system with the mismatch
43 of tilted Dirac cone, tilted parameter for each region are defined as follow,
44

2
 3

{
w1 x< 0
45 w 0= w 2 0 ≤ x ≤ L
w 1 x> L
46
47 The wave solution of Eq. 1 in each region are expressed as follow,
48
49

{ e i k x +r e−i k x ,∧x <0

x x

50 ψ 1= i k x iϕ −i k x −iϕ
s (e e + r e
x
e ) ,∧x <0
x

51

{ a e i q x + b e−i q x ,∧0 ≤ x< L

x x

52 ψ 2= ' i q x iθ −i q x −iθ (4)

s (a e e −b e
x
e ),∧0≤ x < L
x

53

{
i kx x
ψ 3= t e ,∧x ≥ L
54 i k x iϕ
st e e ,∧x ≥ L
x

55

√( )
2
E−U
56 where k x =k cos ϕ is x-component wave vector outside barrier, q x = +w 0 k y −k 2y is x-
ℏ vF
57 component wave vector inside barrier, s=¿sgn(E) and s =¿ sgn( E−U ). The refractive angle of
'

( )
−1
−1 k y
58 electron propagation in region II is θ=tan which can be obtained by considering the
qx
59 conservation of y-component wave vector. By matching the wave functions at the interfaces x=0
2
60 and x=L, the transmission probability T =|t | [CastroNeto2009] can be obtained,
61
62

63 cos2 θ cos2 ϕ (5)

T=
¿¿
64
65
66
67

rce te
Sou l ga
ti a
en
Pot

Dra
in
L

68
69