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Ed & XRD - Xi-Ed 2023
Ed & XRD - Xi-Ed 2023
蔣酉旺 教授
中山大學材料與光電科學學系
Transmission Electron Microscope (TEM)
■Historically, TEMs were developed because of the limited image resolution in light
microscopes, which is imposed by the wavelength of visible light. Only after electron
microscopes were developed was it realized that there are many other equally sound
reasons for using electrons, most of which are utilized to some extent in a modern TEM.
visible-light microscope
δ smallest distance that can be resolved:
The margins of the lens have a shorter focal length than the center.
optic axis
C A B
C A B
Chromatic Aberration
optic axis
LaB6 crystal
JEOL
JEM-2100
Equipment
JEM-2100(HT)
200KV Electron Microscope (LaB6)
Range: 200KV,160KV,120KV,100KV,80KV
Point image: 0.23 nm
Lattice image: 0.14 nm
Magnification: 50X to 1,200KX
Tilting angle: X:±40°; Y:±30°
High tilt specimen retainer: X:±80°
Vacuum Pressure: 2 x 10-5 Pa or better
■ Beam size for TEM Mode:
20~200nm diameter
■ Nanobeam
■CCD 780: for diffraction observation
1 Million pixel CCD sensor
(1300 x 1030 pixels)
■ CCD 831: for high resolution imaging
7 Million pixel CCD sensor
(2672 x 2672 pixels)
active area: 24mm x24mm
■ 3D Tomography Function
Electron/Specimen Interaction
Specimen Current
Electrical information
Elastic Scattered Electrons
Surface analysis & Transmitted Beam
Structure information
Inelastic Scattered Electrons
Compositional information
Electromagnetic Lens
■Thompson, Reid, Davisson, and Germer independently showed that electrons could be
diffracted when passing through thin crystals of nickel.
Performing electron diffraction in TEMs was first realized by Kossel and Mollenstedt (1939).
■The diffraction patterns (DPs) give direct crystallographic information about small areas of the
specimen.
■This capability is one of the most important features of the TEM, because we can relate the
crystallography to the images we see.
■ To a materials scientist, perfect crystals are often pretty boring and can usually be better studied
using such techniques as X-ray diffraction (for structural characterization), the electron microprobe
(for chemical characterization), etc., although new EM techniques
may change this situation.
■ The TEM is the instrument of choice when the specimen is not perfect, particularly when the
feature of interest is what makes the material imperfect or, paradoxically, useful!
Why Use Diffraction in the TEM
■ Is the specimen crystalline? Crystalline and amorphous materials have very different
properties.
■ If it is crystalline, then what are the crystallographic characteristics (lattice parameter,
symmetry, etc.) of the specimen?
■ Is the specimen monocrystalline? If not, what is the grain morphology, how large are the
grains, what is the grain-size distribution, etc.?
■ What is the orientation of the specimen or of individual grains with respect to the electron
beam?
■ Is more than one phase present in the specimen? If so, how are they oriented?
■ We will be talking about positions of spots and not their intensities. This type of
analysis differs from many X-ray studies. The reason those beam intensities are not
measured in TEM is that the electron beams are diffracted many times in a typical TEM
specimen.
■ A similar, but not identical, the situation actually occurs when producing powder
patterns by X-ray diffraction (XRD); diffraction then occurs in many different grains at
the same time.
■ In the X-ray case, if you have a single crystal, then you either have to rotate the
crystal to ‘see’ all the beams or use ‘white’ radiation. Electron diffraction is very
different. We can use a single wavelength and still see many diffracted beams.
■ XRD takes minutes or hours unless you have a synchrotron or a position-sensitive
detector to count every photon, while electron-diffraction patterns can be recorded in
<1 second although longer is usually better because it means
you will have ‘spread the beam’ (made the incident beam more parallel); for the
photographic film you’ll use several seconds to a minute or more.
■ Electrons have a much shorter wavelength than the X-rays commonly encountered
in the research lab.
■ Electrons are scattered more strongly because they interact with both the nucleus
and the electrons of the scattering atoms through Coulomb forces.
■ Electron beams are easily directed because electrons are charged particles.
E-beam
19
Bragg’s Law
Length scale
destructive interference
Wavelength of excitation
θ θ
θθ
d
2θ constructive interference
d
200KeV, λ=0.0251A
sinθ=0.0125n/d
g is reciprocal-lattice vector
= ha1*+ ka2* +la3*
A
│g│ =1/dhkl
g : [h k l]
k1 g
θ
θ
Incident beam: [u v w] k0 P
O
Radius= 1/λ
2-D ED Pattern: single crystal, fiber and powder patterns
121
111
101 021
011
001 121
111
101
b3 120
110
020
100
000
b2 010
O b1 120
C 1/λ 100
110
Edward Sphere
Film
C,C*
1st layer
Crystalline Fibers
S O
Equator
C, fiber axis
Reciprocal
Lattice
b
a
24
Powder Patterns Random orientation
Polycrystal
sample
Diffratometer
Film
2000 6
5
1 7
1500
Intensity
2θ or q 3
1000 2
4
8
500
9
0
q = 2π / d = 4π sinθ / λ 10 20
2θ
30
25 40
∼ 4π θ /λ
SCATTERING FROM A PLANE OF ATOMS
■ Diffraction from a set of planes a distance d apart. The planes have been oriented to be
in the Bragg diffracting condition.
■ Note that the planes are not parallel to the incident beam. The resultant diffraction spots
(reciprocal-lattice points) are labeled G, 2G, etc.
■ The vector g from the origin (O) to the first diffraction spot G is normal to the
diffracting plane.
■ These other reflections (ng, where n ≠1), called higher-order reflections
Laue conditions
Laue conditions:
Laue Zone
Incident beam r
g.r = hu + kv + lw =N r = ua1+ va2 +wa3
N is an integer.
gh k l
g = ha1*+ ka2* +la3*
(h k l)
Application of Laue Zone
2nd
1st
zero
g
Ewald sphere of e-beam at 100kV
Scattering from a single unit cell
n is unit cells per unit area on a plane parallel to the crystal surface and
a is the distance between these planes.
characteristic length
Ewald sphere
g
DIFFRACTION FROM PARTICLES: Shape Effect
Edward Sphere
2θ
1/λ 1/λ
1/d 1/d
sin2θ ≈ (1/d)/(1/λ)
1/λ : 1/d = L : D
2sinθ ≈ λ/d
dD = L λ = constant
2dsinθ ≈ λ
camera length