S T U407DH

S amHop Microelectronics C orp. Apr 20 2007

Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)

P R ODUC T S UMMAR Y (N-C hannel) P R ODUC T S UMMAR Y (P -C hannel)

V DS S ID R DS (ON) ( m Ω ) Max V DS S ID R DS (ON) ( m Ω ) Max

www.DataSheet4U.com 29 @ V G S = 10V 47 @ V G S = -10V

40V 16A -40V -12A
39 @ V G S = 4.5V 64 @ V G S = -4.5V

D1 D2
D1/D2

G1 G2

S1
G1
S2 N-ch P -ch
G2 TO-252-4L S1 S2

ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)

P arameter S ymbol N-C hannel P-C hannel Unit
Drain-S ource Voltage V DS 40 -40 V
Gate-S ource Voltage V GS 20 20 V
25 C 16 -12 A
Drain C urrent-C ontinuous @ Tc ID
70 C 13.8 -10 A
a
-P ulsed IDM 50 -50 A

Drain-S ource Diode Forward C urrent IS 8 -6 A

Tc= 25 C 11
Maximum P ower Dissipation PD W
Tc= 70 C 7.7
Operating Junction and S torage
T J , T S TG -55 to 175 C
Temperature R ange

THE R MAL C HAR AC TE R IS TIC S

Thermal R esistance, Junction-to-C ase R JC 13.6 C /W

Thermal R esistance, Junction-to-Ambient R JA 120 C /W

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N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted)

Parameter S ymbol Condition Min Typ C Max Unit

5 OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA 40 V
Zero Gate Voltage Drain Current IDS S V DS = 32V, V GS = 0V 1 uA
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Gate-Body Leakage IGS S V GS = 20V, V DS = 0V 10 uA
ON CHAR ACTE R IS TICS a
Gate Threshold Voltage V GS (th) V DS = V GS , ID = 250uA 1 1.8 3 V
V GS =10V, ID = 8A 21 29 m ohm
Drain-S ource On-S tate R esistance R DS (ON)
V GS =4.5V, ID= 6A 29 39 m ohm

On-S tate Drain Current ID(ON) V DS = 5V, V GS = 4.5V 20 A

Forward Transconductance gFS V DS = 10V, ID= 8A 15 S
DYNAMIC CHAR ACTE R IS TICS b
Input Capacitance C IS S 735 PF
V DS =20V, V GS = 0V
Output Capacitance C OS S 120 PF
f =1.0MH Z
R everse Transfer Capacitance CRSS 70 PF

Gate resistance Rg V GS =0V, V DS = 0V, f=1.0MH Z 0.36 ohm

b
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time tD(ON) V DD = 20V 13 ns
R ise Time tr ID = 3 A 15 ns
V GS = 10V
Turn-Off Delay Time tD(OFF) R GE N = 3 ohm 26 ns
Fall Time tf 10 ns
Total Gate Charge Qg V DS =20V, ID =8A,V GS =10V 15 nC
V DS =20V, ID =8A,V GS =4.5V 7.2 nC
Gate-S ource Charge Q gs V DS =20V, ID = 8 A 2.0 nC
Gate-Drain Charge Q gd V GS =10V 3.8 nC
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P-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted)

Parameter S ymbol Condition Min Typ C Max Unit

5 OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = -250uA -40 V
Zero Gate Voltage Drain Current IDS S V DS = -32V, V GS = 0V -1 uA
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Gate-Body Leakage IGS S V GS = 20V, V DS = 0V 10 uA
ON CHAR ACTE R IS TICS a
Gate Threshold Voltage V GS (th) V DS = V GS , ID = -250uA -1 -1.6 -3 V
V GS =-10V, ID= -6A 39 47 m ohm
Drain-S ource On-S tate R esistance R DS (ON)
V GS =-4.5V, ID= -4A 49 64 m ohm

On-S tate Drain Current ID(ON) V DS = -5V, V GS = -10V -20 A

Forward Transconductance gFS V DS = -10V, ID = -6A 9 S
DYNAMIC CHAR ACTE R IS TICS b
Input Capacitance C IS S 920 PF
V DS =-20V, V GS = 0V
Output Capacitance C OS S 135 PF
f =1.0MH Z
R everse Transfer Capacitance CRSS 75 PF

Gate resistance Rg V GS =0V, V DS = 0V, f=1.0MH Z 3.5 ohm

b
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time tD(ON) V DD = -20V 12 ns
R ise Time tr ID = -3A 13 ns
V GS = -10V
Turn-Off Delay Time tD(OFF) R GE N = 3 ohm 60 ns
Fall Time tf 25 ns
Total Gate Charge Qg V DS =-20V, ID =-6A,V GS =-10V 15 nC
V DS =-20V, ID =-6A,V GS =-4.5V 7.2 nC
Gate-S ource Charge Q gs V DS =-20V, ID = -6 A 2 nC
Gate-Drain Charge Q gd V GS =-10V 4.0 nC
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 S T U407DH
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
C
Parameter Symbol Condition Min Typ Max Unit
DRAIN-SOURCE DIODE CHARACTERISTICS b
VGS = 0V, Is =8A N-Ch 0.94 1.2
Diode Forward Voltage VSD VGS = 0V, Is =-6A P-Ch -0.87 -1.2 V
Notes
a.Pulse Test:Pulse WidthІ300Ӵs,Duty Cycle І2%.
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b.Guaranteed by design,not subject to production testing.

N-Channel

30 15
V G S =4.5V
25
12
V G S =3.5V
ID , Drain C urrent(A)

I D , Drain C urrent (A)

20
V G S =10V 9
V G S =8V T j=125 C
15

6
10
25 C
V G S =3V
5 3
-55 C
0 0
0 0.5 1 1.5 2 2.5 3 0 0.8 1.6 2.4 3.2 4.0 4.8

V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V )

F igure 1. Output C haracteris tics F igure 2. Trans fer C haracteris tics

60 2.0
R DS (ON) , On-R es is tance

50 1.8
R DS (on) (m Ω)

V G S =10V
Normalized

40 V G S =4.5V 1.6
I D =8A

30 1.4

20 1.2
V G S =10V
10 1.0 V G S =4.5V
I D =6A

0 0.0
1 6 12 18 24 30 0 25 50 75 100 125 150
T j( C )
I D , Drain C urrent (A) T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent F igure 4. On-R es is tance Variation with
and G ate V oltage Drain C urrent and Temperature

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 STU407DH
1.2 1.40

Drain-Source Breakdown Voltage

Gate-Source Threshold Voltage

ID=250uA
1.1 VDS=VGS
1.30
ID=250uA

BVDSS, Normalized
Vth, Normalized

1.0 1.20
0.9
1.10
0.8
1.00
0.7
0.90
6
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0.6
0.5 0.80
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C ) Tj, Junction Temperature ( C )

Figure 5. Gate Threshold Variation Figure 6. Breakdown Voltage Variation

with Temperature with Temperature

60 20.0
ID=8A
50
125 C 10.0
Is, Source-drain current (A)

40
RDS(on) (m Ω)

75 C
30
25 C
25 C
20
125 C 75 C

10

0 1.0
0 2 4 6 8 10 0.4 0.6 0.8 1.0 1.2 1.4

VGS, Gate- Source Voltage (V) VSD, Body Diode Forward Voltage (V)

Figure 7. On-Resistance vs. Figure 8. Body Diode Forward Voltage

Gate-Source Voltage Variation with Source Current

200
Tj(max)=175 C
160 TA=25 C
Power (W)

120

80

40

0
0.0001 0.001 0.01 0.1 1

Figure 9. Single Pulse Power Rating

Junction-to-Case

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 S T U407DH
1200 10

V G S , G ate to S ource V oltage (V )

V DS =20V
1000
8 I D =8A
C is s
C , C apacitance (pF )

800
6
600
4
400
C os s
6 200
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2
C rs s
0 0
0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 16
V DS , Drain-to S ource Voltage (V ) Qg, T otal G ate C harge (nC )

F igure 10. C apacitance F igure 11. G ate C harge

300 100
80
Tr
S witching T ime (ns )

I D , Drain C urrent (A)

100 T D(off)
60 T D(on)
it
Tf
) L im 1m
s
( ON 10
10 10 R DS 10 ms
0m
1s s
DC

V DS =20V ,ID=1A V G S =10V

1 1 S ingle P ulse
V G S =10V
T c=25 C
0.5
1 6 10 60 100 300 600 0.1 1 10 30 60
R g, G ate R es is tance ( Ω) V DS , Drain-S ource V oltage (V )

F igure 12.s witching characteris tics F igure 13. Maximum S afe

O perating Area

1
T ransient T hermal Impedance

D=0.5
r(t),Normalized E ffective

0.2
0.1
P DM
0.1
0.05
t1
0.02 t2
0.01 1. R ӰJ A (t)=r (t) * R ӰJ A
2. R ӰJ A =S ee Datas heet
S ING LE P ULS E 3. T J M-T A = P DM* R ӰJ A (t)
4. Duty C ycle, D=t1/t2
0.01
-5 -4 -3 -2 -1
10 10 10 10 10 1 10

S quare Wave P uls e Duration (s ec)

F igure 14. Normalized T hermal T rans ient Impedance C urve

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 S T U407DH
P-C hannel

20 15
V G S =-10V V G S =-4.5V

16 V G S =-3.5V 12
-I D , Drain C urrent(A)

-I D , Drain C urrent (A)

12 9
www.DataSheet4U.com T j=125 C -55 C

8 V G S =-8V 6
25 C
4 V G S =-3V 3

0 0
0 0.5 1 1.5 2 2.5 3 0 0.8 1.6 2.4 3.2 4.0 4.8

-V DS , Drain-to-S ource Voltage (V ) -V G S , G ate-to-S ource Voltage (V )

F igure 1. Output C haracteris tics F igure 2. Trans fer C haracteris tics

120 1.5
R DS (ON) , On-R es is tance

100 1.4
V G S =-10V
R DS (on) (m Ω)

I D =-6A
Normalized

80 1.3
V G S =-4.5V

60 1.2

40 1.1 V G S =-4.5V
V G S =-10V I D =-4A

20 1.0

0 0.0
1 4 8 12 16 20 0 25 50 75 100 125 150
T j( C )
-I D , Drain C urrent (A) T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent F igure 4. On-R es is tance Variation with
and G ate V oltage Drain C urrent and Temperature

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 S T U407DH

Drain-S ource B reakdown V oltage

G ate-S ource T hres hold V oltage

1.3 1.15
I D =-250uA
1.2 V DS =V G S
1.10
I D =-250uA

B V DS S , Normalized
V th, Normalized

1.1 1.05
1.0
1.00
0.9
0.95
0.8
0.90
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0.7
0.6 0.85
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
T j, J unction T emperature ( C ) T j, J unction T emperature ( C )

F igure 5. G ate T hres hold V ariation F igure 6. B reakdown V oltage V ariation

with T emperature with T emperature

120 20.0
I D =-6A
100 25 C
-Is , S ource-drain current (A)

125 C 10.0
R DS (on) (m Ω)

80
75 C

60
25 C
40
125 C 75 C

20

0 1.0
0 2 4 6 8 10 0.4 0.6 0.8 1.0 1.2 1.4

-V G S , G ate- S ource Voltage (V ) -V S D , B ody Diode F orward V oltage (V )

F igure 7. On-R es is tance vs . F igure 8. B ody Diode F orward V oltage

G ate-S ource V oltage V ariation with S ource C urrent

200
T j(max)=175 C
160 T A =25 C
P ower (W )

120

80

40

0
0.0001 0.001 0.01 0.1 1

F igure 9. S ingle P uls e P ower R ating

J unction-to-C as e

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 S T U407DH
1200 10

-V G S , G ate to S ource V oltage (V )

C is s V DS =-20V
1000
8 I D =-6A
C , C apacitance (pF )

800
6
600
4
400
C os s
6 200
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2
C rs s
0 0
0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 16
-V DS , Drain-to S ource Voltage (V ) Qg, T otal G ate C harge (nC )

F igure 10. C apacitance F igure 11. G ate C harge

300 70

Tr
50
S witching T ime (ns )

-I D , Drain C urrent (A)

100 T D(off)
t
im i

T D(on)
60
)L

Tf
(O N

10
ms
S
RD

10 10 10
0
1 s ms
DC

V DS =20V ,ID=1A 1 V G S =-10V

1 V G S =10V S ingle P ulse
T c=25 C
0.03
1 6 10 60 100 300 600 0.1 1 10 30 60
R g, G ate R es is tance ( Ω) -V DS , Drain-S ource V oltage (V )
F igure 12.s witching characteris tics F igure 13. Maximum S afe
O perating Area

1
T ransient T hermal Impedance

D=0.5
r(t),Normalized E ffective

0.2
0.1
P DM
0.1
0.05
t1
t2
0.02

0.01 1. R ӰJ A (t)=r (t) * R ӰJ A

2. R ӰJ A =S ee Datas heet
S ING LE P ULS E 3. T J M-T A = P DM* R ӰJ A (t)
4. Duty C ycle, D=t1/t2
0.01
-5 -4 -3 -2 -1
10 10 10 10 10 1 10

S quare Wave P uls e Duration (s ec)

F igure 14. Normalized T hermal T rans ient Impedance C urve

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 S T U407DH
P A C K A G E OUT L INE DIME NS IONS

TO-252-4L

A
B

H
K
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C
M

J L

S P G

Millimeters
REF .
MIN MAX
A 6.40 6.80
B 5.2 5.50
C 6.80 10.20
D 2.20 3.00
P 1.27 REF.
S 0.50 0.80
G 0.40 0.60
H 2.20 2.40
J 0.45 0.60
K 0 0.15
L 0.90 1.50
M 5.40 5.80

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 S T U407DH
TO-252-4L Tape and Reel Data
TO-252-4L Carrier Tape

ˇ
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TO-252-4L Reel

UNIT:р

11