STB45N65M5, STF45N65M5, STP45N65M5

STW45N65M5
N-channel 650 V, 0.067 Ω typ., 35 A MDmesh™ V Power MOSFET
in D2PAK, TO-220FP, TO-220 and TO-247 packages
Datasheet — production data

Features TAB

VDSS @ RDS(on) 2
Order code ID 3
TJmax max 1
3
D2PAK 2
STB45N65M5 1

TO-220FP
STF45N65M5 TAB
710 V < 0.078 Ω 35 A
STP45N65M5
STW45N65M5
3
2
■ Worldwide best RDS(on) * area 1 2
3
1
■ Higher VDSS rating and high dv/dt capability TO-220 TO-247
■ Excellent switching performance
■ 100% avalanche tested
Figure 1. Internal schematic diagram
Applications
■ Switching applications $ 4!"

Description
These devices are N-channel MDmesh™ V
'
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The 3
resulting product has extremely low on-
resistance, which is unmatched among silicon-
!-V
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.

Table 1. Device summary

Order code Marking Package Packaging
2PAK
STB45N65M5 D Tape and reel
STF45N65M5 TO-220FP
45N65M5
STP45N65M5 TO-220 Tube
STW45N65M5 TO-247

August 2012 Doc ID 022854 Rev 2 1/22

This is information on a product in full production. www.st.com 22
Contents STB45N65M5, STF45N65M5, STP45N65M5, STW45N65M5

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6

3 Test circuits .............................................. 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

2/22 Doc ID 022854 Rev 2

STB45N65M5, STF45N65M5, STP45N65M5, STW45N65M5 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Value

Symbol Parameter D2PAK Unit

TO-220 TO-220FP
TO-247

VGS Gate-source voltage ± 25 V

ID (1)
Drain current (continuous) at TC = 25 °C 35 35 A
ID Drain current (continuous) at TC = 100 °C 22 22 (1) A
(1) (1)
IDM Drain current (pulsed) 140 140 A
PTOT Total dissipation at TC = 25 °C 210 40 W
dv/dt (2)
Peak diode recovery voltage slope 15 V/ns
Insulation withstand voltage (RMS) from all
VISO three leads to external heat sink 2500 V
(t = 1 s; TC = 25 °C)
Tstg Storage temperature - 55 to 150 °C
Tj Max. operating junction temperature 150 °C
1. Limited by maximum junction temperature.
2. ISD ≤ 35 A, di/dt ≤ 400 A/µs, VDS(Peak) < V(BR)DSS, VDD = 400 V

Table 3. Thermal data

Value
Symbol Parameter Unit
D2PAK TO-220FP TO-220 TO-247

Rthj-case Thermal resistance junction-case max 0.60 3.13 0.60 °C/W

Rthj-pcb(1) Thermal resistance junction-pcb max 30 °C/W
Thermal resistance junction-ambient
Rthj-amb 62.5 50 °C/W
max
1. When mounted on 1 inch² FR-4, 2 Oz copper board.

Table 4. Avalanche characteristics

Symbol Parameter Value Unit

Avalanche current, repetetive or not repetetive

IAR 9 A
(pulse width limited by Tjmax )
Single pulse avalanche energy (starting tj=25°C,
EAS 810 mJ
Id= IAR; Vdd=50)

Doc ID 022854 Rev 2 3/22

Electrical characteristics STB45N65M5, STF45N65M5, STP45N65M5, STW45N65M5

2 Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

Drain-source
V(BR)DSS ID = 1 mA, VGS = 0 650 V
breakdown voltage
Zero gate voltage VDS = 650 V 1 µA
IDSS
drain current (VGS = 0) VDS = 650 V, TC=125 °C 100 µA
Gate-body leakage
IGSS VGS = ± 25 V ± 100 nA
current (VDS = 0)
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V
Static drain-source
RDS(on) VGS = 10 V, ID = 17.5 A 0.067 0.078 Ω
on-resistance

Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit

Input capacitance
Ciss 3470 pF
Output capacitance VDS = 100 V, f = 1 MHz,
Coss - 82 - pF
Reverse transfer VGS = 0
Crss 7 pF
capacitance
Equivalent
Co(tr)(1) capacitance time - 280 - pF
related
VDS = 0 to 520 V, VGS = 0
Equivalent
(2)
Co(er) capacitance energy - 79 - pF
related
Intrinsic gate
RG f = 1 MHz open drain - 2 - Ω
resistance
Qg Total gate charge VDD = 520 V, ID = 17.5 A, 82 nC
Qgs Gate-source charge VGS = 10 V - 18.5 - nC
Qgd Gate-drain charge (see Figure 20) 35 nC
1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when
VDS increases from 0 to 80% VDSS
2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss
when VDS increases from 0 to 80% VDSS

4/22 Doc ID 022854 Rev 2

STB45N65M5, STF45N65M5, STP45N65M5, STW45N65M5 Electrical characteristics

Table 7. Switching times

Symbol Parameter Test conditions Min. Typ. Max Unit

td (v) Voltage delay time VDD = 400 V, ID = 23 A, 79.5 ns

tr (v) Voltage rise time RG = 4.7 Ω, VGS = 10 V 11 ns
- -
tf (i) Current fall time (see Figure 21 and 9.3 ns
tc(off) Crossing time Figure 24) 16 ns

Table 8. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD Source-drain current 35 A

-
ISDM (1) Source-drain current (pulsed) 140 A
VSD (2) Forward on voltage ISD = 35 A, VGS = 0 - 1.5 V
trr Reverse recovery time 392 ns
ISD = 35 A, di/dt = 100 A/µs
Qrr Reverse recovery charge - 7.4 µC
VDD = 100 V (see Figure 21)
IRRM Reverse recovery current 38 A
trr Reverse recovery time ISD = 35 A, di/dt = 100 A/µs 468 ns
Qrr Reverse recovery charge VDD = 100 V, Tj = 150 °C - 9.7 µC
IRRM Reverse recovery current (see Figure 21) 42 A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Doc ID 022854 Rev 2 5/22

Electrical characteristics STB45N65M5, STF45N65M5, STP45N65M5, STW45N65M5

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for D²PAK and Figure 3. Thermal impedance TO-220, D²PAK
TO-220
AM13077v1
ID
(A)
Tj=150°C
Tc=25°C
Single pulse
100
is
ea )
ar S(on
is D
th R
in x
10 o n ma 10µs
ti y
e ra d b 100µs
p e
O imit
L 1ms

1 10ms

0.1
0.1 1 10 100 VDS(V)

Figure 4. Safe operating area TO220FP Figure 5. Thermal impedance for TO-220FP
AM13078v1
ID
(A)
Tj=150°C
Tc=25°C
100
Single pulse
is
ea
s ar (on)
i S
th RD
in ax 10µs
10 ion y m
a t
er d b
Op mite 100µs
Li
1 1ms
10ms

0.1

0.01
0.1 1 10 100 VDS(V)

Figure 6. Safe operating area TO-247 Figure 7. Thermal impedance TO-247

AM13079v1
ID
(A)
Tj=150°C
Tc=25°C
Single pulse
100
is
R rea
)
on
ax a
S(
m this

10µs
by n
d ni
ite tio

10 100µs
ra
pe
O
m

1ms
Li

10ms
1

0.1
0.1 1 10 100 VDS(V)

6/22 Doc ID 022854 Rev 2

STB45N65M5, STF45N65M5, STP45N65M5, STW45N65M5 Electrical characteristics

Figure 8. Output characteristics Figure 9. Transfer characteristics

AM13080v1 AM13081v1
ID (A) ID (A)
VGS=10V VDS=25V
90 90
80 80
70 70
7V
60 60
50 50
40 40
30 30
20 6V 20
10 10
0 0
0 5 10 15 20 VDS(V) 3 4 5 6 7 8 9 VGS(V)

Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on-resistance
AM13082v1 AM13083v1
VGS RDS(on)
VDS
(V) (V) (Ω)
VDS VDD=520V VGS=10V
12 ID=17.5A 500 0.071

10
400 0.069
8
300 0.067
6
200 0.065
4

100 0.063
2

0 0 0.061
0 20 40 60 80 100 Qg(nC) 0 5 10 15 20 25 ID(A)

Figure 12. Capacitance variations Figure 13. Output capacitance stored energy
AM13084v1 AM13085v1
C Eoss (µJ)
(pF)
16
10000 14
Ciss
12
1000
10

8
100
Coss 6

10 4
Crss
2

1 0
0.1 1 10 100 VDS(V) 0 100 200 300 400 500 600 VDS(V)

Doc ID 022854 Rev 2 7/22

Electrical characteristics STB45N65M5, STF45N65M5, STP45N65M5, STW45N65M5

Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs.
vs. temperature temperature
VGS(th) AM05459v2 AM05460v2
RDS(on)
(norm) ID=250µA (norm) VGS=10V
1.10 2.1 ID=17.5V
1.9
1.00 1.7

1.5

0.90 1.3
1.1

0.80 0.9

0.7
0.70 0.5
-50 -25 0 25 50 75 100 TJ(°C) -50 -25 0 25 50 75 100 TJ(°C)

Figure 16. Drain-source diode forward Figure 17. Normalized VDS vs. temperature
characteristics
AM05461v1 AM10399v1
VSD VDS
(norm)
(V) TJ=-50°C
1.08
1.2 ID = 1mA
1.06
1.0
1.04
0.8 1.02
TJ=25°C
1.00
0.6
TJ=150°C 0.98
0.4
0.96
0.2
0.94
0 0.92
0 10 20 30 40 50 ISD(A) -50 -25 0 25 50 75 100 TJ(°C)

Figure 18. Switching losses vs. gate

resistance (1)
AM13086v1
E
(μJ)
ID=23A Eon
600 VDD=400V
VGS=10V
500

400 Eoff

300

200

100

0
0 10 20 30 40 RG(Ω)
1. Eon including reverse recovery of a SiC diode

8/22 Doc ID 022854 Rev 2

STB45N65M5, STF45N65M5, STP45N65M5, STW45N65M5 Test circuits

3 Test circuits

Figure 19. Switching times test circuit for Figure 20. Gate charge test circuit
resistive load
VDD

12V 47kΩ
1kΩ
100nF
RL 2200 3.3
μF μF
VDD IG=CONST
VD Vi=20V=VGMAX 100Ω D.U.T.
VGS 2200
RG D.U.T. μF 2.7kΩ VG

PW
47kΩ

PW 1kΩ
AM01468v1 AM01469v1

Figure 21. Test circuit for inductive load Figure 22. Unclamped inductive load test
switching and diode recovery times circuit

L
A A A
D
FAST L=100μH VD
G D.U.T. DIODE 2200 3.3
μF μF VDD
S B 3.3 1000
B B μF μF
25 Ω VDD ID
D

RG S
Vi D.U.T.

Pw
AM01470v1 AM01471v1

Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform
V(BR)DSS Id
Concept waveform for Inductive Load Turn-off

VD 90%Vds 90%Id

Tdelay-off
-off

IDM
Vgs

90%Vgs on

ID
Vgs(I(t))
))

VDD VDD 10%Vds 10%Id

Vds
Trise Tfall

Tcross --over
AM01472v1 AM05540v2

Doc ID 022854 Rev 2 9/22

Package mechanical data STB45N65M5, STF45N65M5, STP45N65M5, STW45N65M5

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.

10/22 Doc ID 022854 Rev 2

STB45N65M5, STF45N65M5, STP45N65M5, STW45N65M5 Package mechanical data

Table 9. D²PAK (TO-263) mechanical data

mm
Dim.
Min. Typ. Max.

A 4.40 4.60
A1 0.03 0.23
b 0.70 0.93
b2 1.14 1.70
c 0.45 0.60
c2 1.23 1.36
D 8.95 9.35
D1 7.50
E 10 10.40
E1 8.50
e 2.54
e1 4.88 5.28
H 15 15.85
J1 2.49 2.69
L 2.29 2.79
L1 1.27 1.40
L2 1.30 1.75
R 0.4
V2 0° 8°

Doc ID 022854 Rev 2 11/22

Package mechanical data STB45N65M5, STF45N65M5, STP45N65M5, STW45N65M5

Figure 25. D²PAK (TO-263) drawing

0079457_T

Figure 26. D²PAK footprint(a)

16.90

12.20 5.08

1.60

3.50
9.75
Footprint

a. All dimensions are in millimeters

12/22 Doc ID 022854 Rev 2

STB45N65M5, STF45N65M5, STP45N65M5, STW45N65M5 Package mechanical data

Table 10. TO-220FP mechanical data

mm
Dim.
Min. Typ. Max.

A 4.4 4.6
B 2.5 2.7
D 2.5 2.75
E 0.45 0.7
F 0.75 1
F1 1.15 1.70
F2 1.15 1.70
G 4.95 5.2
G1 2.4 2.7
H 10 10.4
L2 16
L3 28.6 30.6
L4 9.8 10.6
L5 2.9 3.6
L6 15.9 16.4
L7 9 9.3
Dia 3 3.2

Doc ID 022854 Rev 2 13/22

Package mechanical data STB45N65M5, STF45N65M5, STP45N65M5, STW45N65M5

Figure 27. TO-220FP drawing

7012510_Rev_K_B

14/22 Doc ID 022854 Rev 2

STB45N65M5, STF45N65M5, STP45N65M5, STW45N65M5 Package mechanical data

Table 11. TO-220 type A mechanical data

mm
Dim.
Min. Typ. Max.

A 4.40 4.60
b 0.61 0.88
b1 1.14 1.70
c 0.48 0.70
D 15.25 15.75
D1 1.27
E 10 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L 13 14
L1 3.50 3.93
L20 16.40
L30 28.90
∅P 3.75 3.85
Q 2.65 2.95

Doc ID 022854 Rev 2 15/22

Package mechanical data STB45N65M5, STF45N65M5, STP45N65M5, STW45N65M5

Figure 28. TO-220 type A drawing

0015988_typeA_Rev_S

16/22 Doc ID 022854 Rev 2

STB45N65M5, STF45N65M5, STP45N65M5, STW45N65M5 Package mechanical data

Table 12. TO-247 mechanical data

mm.
Dim.
Min. Typ. Max.

A 4.85 5.15
A1 2.20 2.60
b 1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
∅P 3.55 3.65
∅R 4.50 5.50
S 5.30 5.50 5.70

Doc ID 022854 Rev 2 17/22

Package mechanical data STB45N65M5, STF45N65M5, STP45N65M5, STW45N65M5

Figure 29. TO-247 drawing

0075325_G

18/22 Doc ID 022854 Rev 2

STB45N65M5, STF45N65M5, STP45N65M5, STW45N65M5 Packaging mechanical data

5 Packaging mechanical data

Table 13. D²PAK (TO-263) tape and reel mechanical data

Tape Reel

mm mm
Dim. Dim.
Min. Max. Min. Max.

A0 10.5 10.7 A 330

B0 15.7 15.9 B 1.5
D 1.5 1.6 C 12.8 13.2
D1 1.59 1.61 D 20.2
E 1.65 1.85 G 24.4 26.4
F 11.4 11.6 N 100
K0 4.8 5.0 T 30.4
P0 3.9 4.1
P1 11.9 12.1 Base qty 1000
P2 1.9 2.1 Bulk qty 1000
R 50
T 0.25 0.35
W 23.7 24.3

Doc ID 022854 Rev 2 19/22

Packaging mechanical data STB45N65M5, STF45N65M5, STP45N65M5, STW45N65M5

Figure 30. Tape for D²PAK (TO-263)

10 pitches cumulative
tolerance on tape +/- 0.2 mm

Top cover P0 D P2
T tape
E

F
K0 W
B0

A0 P1 D1

User direction of feed

Bending radius
User direction of feed

AM08852v2

Figure 31. Reel for D²PAK (TO-263)

T
REEL DIMENSIONS

40mm min.

Access hole

At sl ot location

A N

Full radius Tape slot G measured at hub

in core for
tape start 25 mm min.
width

AM08851v2

20/22 Doc ID 022854 Rev 2

STB45N65M5, STF45N65M5, STP45N65M5, STW45N65M5 Revision history

6 Revision history
2

Table 14. Document revision history

Date Revision Changes

22-Feb-2012 1 First release.

Document status promoted from preliminary data to production data.
28-Aug-2012 2
Inserted Section 2.1: Electrical characteristics (curves).

Doc ID 022854 Rev 2 21/22

 STB45N65M5, STF45N65M5, STP45N65M5, STW45N65M5

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22/22 Doc ID 022854 Rev 2