Day 10

Analog Electronics I
Daniela Charris Stand

dmcharris@uninorte.edu.co
Universidad del Norte

Barranquilla
SCHEDULE
7:30 a.m. - 7:45 a.m. : Day 7 recap
7:45 a.m. - 9:45 a.m. : BJT Transistors - Biasing
9:45 a.m. - 10:00 a.m. : Break
10:00 a.m. - 11:00 a.m. : BJT Transistors - AC Models
11:00 a.m. - 12:30 p.m : Lab Activity: BJT Transistors
2
DETAILED COURSE PLAN
Exam 3:
BJT Transistors
3
EVALUATION
Tuesday,
July 5th
4
TRANSISTORS
5
Butterfly valve Control valve
Bi-directional,
Symmetrical
Uni-directional, Non-symmetrical
6
Transistor
7
BJT Types
NPN
Emitter Collector
Base
PNP
8
BJTs are not symmetrical devices!
- Example of NPN -
Figure 6.7 Cross-section of an npn BJT implemented in an Integrated Chip
Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.
9
BJT Types and Models
10
BJT Types
NPN
Emitter Collector
PNP Base
11
BJT Types
NPN
Emitter Collector
Base
12
NPN Transistor
NPN
Emitter Collector
Base
13
NPN Transistor
IC = β·IB, β ≈ 200
= α IE
Simple model
for
IC = 𝛼·IE,
active mode
IC ≈ I E
14
BJT Types
NPN
Emitter Collector
PNP Base
15
BJT Types
Emitter Collector
PNP Base
16
PNP Transistor
Emitter Collector
PNP Base
17
PNP Transistor
Look at the relative position of E,B,C:

● Emitter above,
● Base in the middle
● Collector at bottom
18
Temperature effects on BJTs
19
Temperature effects
on conduction
● For constant IC
→ vBE decreases 2mV/°C
● For constant vBE
→ IC doubles for each additional 5°C
20
Dependency of hFE ( β ) on
IC and Temperature
← β typical ≈ 200
21
Modes of Operation in BJTs
- Cut-off, Active, Saturation -
22
BJT Operation Modes
CUT-OFF
npn pn
p
23
BJT Operation Modes
ACTIVE
np pn
n p
Microelectronic Circuits, Sixth Edition

Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.
24
BJT Operation Modes
SATURATION
np pn
n p
25
Transistor Operation Regions
26
Transistor Operation
- Effect of Rc -
27
Transistor Operation
- Effect of Rc -
small Rc:
LARGE Rc:
28
BJT as a switch
- Only Cut-off and Saturation -
Taken from Horowitz, “Art of Electronics”, 2015
29
Transistor as an ON-OFF Switch
OFF SAT
“fully ON”
≈
≈
30
NPN Transistor as an
ON-OFF Switch
120V
31
NPN Transistor as an
ON-OFF Switch
32
BJT as an amplifier
- Only Active -
33
Single-stage BJT amplifier
(Single power supply)
34
(Dual power supply)
35
Multi-stage BJT amplifier
36
Multi-stage MOSFET-BJT amplifier
37
Analysis of Circuits with BJTs
38
Analysis of circuits with transistors
The analysis is conducted in two steps, using superposition:
1. DC analysis 2. AC (small-signal) analysis

Find out for each transistor: • Compute the linearized equivalent AC model of each
• Operation mode transistor (gm , ro, etc.), based on the DC analysis.
• All voltages and currents at its terminals • Find Ri , Ro , Avo of the amplifier and
express it in the canonical form (blue box):
39
BJTs - DC Analysis
Useful Formulas and Examples
40
Useful Formulas
41
Figure 6.22 Analysis of the circuit for Example 6.4
42
Figure 6.22 Analysis of the circuit for Example 6.4
43
Figure 6.23 Analysis of the circuit for Example 6.5.
44
ACTive?
45
ACTive?
46
ACTive?
47
ACTive? SATuration?
48
ACTive? SATuration?
49
Bad Designs
in BJT DC Circuits
50
Figure 6.26 Example 6.8
What happens if β is halved? And if it is doubled?
51
What if β = 50?
What if β = 200?
52
When β changes β1
↓ β2
the VCE voltage
moves a lot !!! ≈
↓
Circuit behaviour depends
highly
on beta !
Sensitive to
variations among
↳ Bad design! similar
components!
53
More bad designs
There is no
negative feedback
↓
An unintentional
change in IC does not
affect VBE
Figure 6.59 Two obvious schemes for biasing the BJT: (a) by fixing VBE; (b) by fixing IB.
Both result in wide variations in IC and hence in VCE and therefore are considered to be “bad.”
Neither scheme is recommended.
54
This is a not-so-good design
Although it does create a

negative feedback (which is
good), it still depends on
beta.
Try fixing VC = VCC/2

and see what happens when
beta changes
Figure 6.62 (a) A common-emitter transistor amplifier biased by a feedback resistor RB. (b)
Analysis of the circuit in (a).
55
Good Designs
in BJT DC Circuits
56
57
What if β = 50?
What if β = 200?
58
When β changes β1
↓ β2
the IC stays stable
≈
↓
Beta has little impact on
circuit behaviour !
↳Good design! Insensitive to

variations among
similar
components!
59
More good designs
The “4-resistor H-configuration”
There is
negative feedback!
↓
An unintentional change in IC
(due to beta or temperature)
does affect VBE,
avoiding large changes in IC
↓
The resistor RE is the key!
60
More good designs
61
Thevenin equivalent of the left section
62
More good designs
63
Current Sources with BJTs
64
Current Source: Basic Concept
65
Current Source: Basic Concept
66
Current-source Circuits
67
Current-source Circuits
68
Current Mirror
This is the preferred

biasing method in
integrated circuits
(IC chips)
69
Current Mirror
This is the preferred

biasing method in
integrated circuits
(IC chips)
70
A nice example that grows...
71
Figure 6.28 Circuits for Example 6.10.
72
73
74
75
76
Any load!
Remains unchanged,
independent of the load
(Valid as long as the BJT

remains active: VC > VE + 0.3V)
77
78
79
80
Any load!
81
Exercise 6.30
82
AC (small-signal)
analysis
83
(Single power supply)
84
Analysis of circuits with BJTs
The analysis is carried in two steps, using superposition:
1. DC analysis:
Find all voltages and currents at each transistor: VE , VB , VC , IE , IC , IB
2. AC (small-signal) analysis:
Find Ri , Ro , Avo of the amplifier and express it in the canonical form (blue box):
85
More detailed:
1. DC analysis:
a) Find all voltages and currents at each transistor: VE , VB , VC , IE , IC , IB
b) This means that you must also find the correct operation mode for each transistor!
There are three possible modes: OFF, ACT or SAT.
c) Then you compute the “AC (small-signal)” parameters: gm , re , rπ , ro
2. AC (small-signal) analysis:
a) Using the linearized models of the transistors (with the AC parameters),
Find the input resistance, output resistance and gain of the amplifier: Ri , Ro , Avo
b) Express the amplifier in the canonical form.
86
DC + AC Only DC Only AC
Full analysis (bias) analysis (small-signal)
analysis
87
BJT equivalent models for small signal analysis (npn & pnp)
“Pi” Models
“T” Models
88
𝜋-model for small signal analysis
When emitter to ground in

small signal analysis
89
T-model for small signal analysis
When base to ground in
small signal analysis
90
NPN and PNP use the same
small signal models “𝜋” and “T”
91
NPN and PNP use the same
small signal models “𝜋” and “T”
92
Derivation of the small-signal parameters gm , re , rπ , ro .
Approximate ic = gm · vbe
linear behavior
for small
varying signals
93
The Voltage Transfer Characteristic (VTC)
VTC:
It is just a plot of output voltage
versus input voltage:
vCE vs. vBE
Point “Q” is called

Bias or “Quiescent” Point
94
Biasing using Current Sources
(Current Mirrors)
This is the preferred biasing method in

integrated circuits
(IC chips)
Figure 6.63 Circuit for implementing the current source I.

95
Basic BJT Amplifiers
96
Common-Emitter (CE) Amplifier
97
Common-Emitter (CE) Amplifier
98
Common-Emitter with Re (CE+Re) Amplifier
Figure 6.66 (a) A common-emitter amplifier with an emitter resistance Re. (b) Equivalent circuit obtained by replacing the
transistor with its T model.
99
Common-Emitter with Re (CE+Re) Amplifier
Figure 6.66 (a) A common-emitter amplifier with an emitter resistance Re. (b) Equivalent circuit obtained by replacing the
transistor with its T model.
100
Common-Base (CB) Amplifier
Figure 6.67 (a) A common-base amplifier using the structure of Fig. 6.64. (b) Equivalent circuit obtained by
replacing the transistor with its T model.
101
Common-Base (CB) Amplifier
Figure 6.67 (a) A common-base amplifier using the structure of Fig. 6.64. (b) Equivalent circuit obtained by
replacing the transistor with its T model.
102
Common-Collector (CC) Amplifier
Figure 6.68 (a) An emitter-follower circuit based on the structure of Fig. 6.64. (b) Small-signal equivalent circuit
of the emitter follower with the transistor replaced by its T model.
103
Common-Collector (CC) Amplifier
Figure 6.68 (a) An emitter-follower circuit based on the structure of Fig. 6.64. (b) Small-signal equivalent circuit
of the emitter follower with the transistor replaced by its T model.
Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.
Microelectronic Circuits, Sixth Edition
104
The Amplifier Bandwidth
Figure 6.69 Sketch of the magnitude of the gain of a CE amplifier versus frequency. The graph delineates
the three frequency bands relevant to frequency-response determination.
105

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Analog Electronics I

Daniela Charris Stand

Universidad del Norte

Figure 6.7 Cross-section of an npn BJT implemented in an Integrated Chip

Look at the relative position of E,B,C:

→ vBE decreases 2mV/°C

● For constant vBE

→ IC doubles for each additional 5°C

Microelectronic Circuits, Sixth Edition

1. DC analysis 2. AC (small-signal) analysis

Useful Formulas and Examples

What happens if β is halved? And if it is doubled?

What happens if β is halved? And if it is doubled?

Although it does create a

Try fixing VC = VCC/2

What happens if β is halved? And if it is doubled?

↳Good design! Insensitive to

This is the preferred

This is the preferred

(Valid as long as the BJT

The analysis is carried in two steps, using superposition:

When emitter to ground in

Point “Q” is called

This is the preferred biasing method in

Figure 6.63 Circuit for implementing the current source I.

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