©: P. R. 8. BC 556, BC 557, BC 558 ZA BANEASA BC 559, BC 560 TRANZISTOARE CU SILICIU PNP PLANAR mean EPITAXIALE CU ZGOMOT REDUS DE t AUDIOFRECVENTA ¢ SILICO! AF TE, EPITAXIAL PLANAR LOW NOISE TORS TO92 VALORI LIMITA ABSOLUTA BC 556 BC 557 BC 558 ABSOLUTE MAXIMUM RATINGS BC 560 BC559 —Veno ‘Tensiune colector-bazi (—Ig = 0) 80V 50V 30V Collector-base voltage —Veso Tensiune colector-emitor (—Ip =0) |65V 45 V 30V Collector-emitter voltage | | i Veno Tensiune emitor-bazi (—Ic = 0) 5V | Emitter-base voltage | — Ie Curent de colector 100 mA | Collector current | — Tox Curent de colector de virf 200 mA | Collector peak current | — Inw Curent de baz de virf 200 mA Base peak current | Pot —--Putere total disipata (1) 300 mW | Total power dissipation | Tye Temperatura maxima a joncfiunii 150 °C ee Maximum junction temperature Domeniul temperaturilor de stocare —35++4150 °C | Storage temperature range (1) Terminalele menfinute pink la 2 mm de capsuld le Ta < 25°C At 2mm from the case the leods kept at Ta < 25°C www. datasheetcatalog.comBC 556, BC 557, BC 558 LPRS Oy BC 559, BC 560 Snncex UD) CARACTERISTICH TERMICE THERMAL CHARACTERISTICS © Ruy-a __ Rezistenta termicd joncfiune-ambiant ; Junction-ambient thermal resistance max. 420 °C/W CARACTERISTICL ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS | ~~ Parametru . . j Parameter | Min. Typ. Max.| Unit. | — Icno Curent rezidual colector-bazi | | | Collector-base cut-off current | | - 30 V | 15 | nA —Ves = 30 V; Ta = 125°C | 5} pA — Inno Curent: rezidual emitor-baz& | | Emitter-base cut-off current | —Ven = 4V 15 | nA | — Vanjso Tensiune de stripungere colector-baza | Collector-base breakdown voltage | —Ic = 10 pA BC 556 | 80 v BC 557; BC 560 | 50 |v BC 558; BC 559 | 30 lv | — Vanero Tensiume de stripungere colector- | emitor | Collector-emitter breakdown voltage —Ip = 2mA BC 556 | 65 v (2) BC 557; BC 560 | 45 Vv BC 558; BC 559 | 30 |v — Viprjxso ‘Tensiune de stripungere emitor-baza Emitter-base breakdown voltage | —Ip=1pA | 5 v — Voces Tensiune de saturatie colector-emitor | | Collector-emitter saturation voltage j —Ic = 10 mA; —Ip = 0,5 mA | 300 | mV =100mA; —Ip = 5mA | 650 | mv 80 www. datasheetcatalog.comGd PBS. APs sinensis CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS BC 556, BC 557, BC 558 (cont. Parametru Parameter Min, Typ. Max. | Unit. bre fp Cezo Tensiune de saturatie bazi-emitor Base-emitter saturation voltage 10mA; —Ip =0,5 mA =100mA; —Ip = 5mA Factor de amplificare in curent continua DC forward current transfer ratio Vee =5V; —Ic= 10 pA gr. wre gr =5V;—-Ie=2mA gr. gr. > —-Vv 3 gr, —Vee = 5V; —Ie = 100 mA gr. gr. gr. Factor de amplificare in curent alternativ AC forward current transfer ratio — Vee =5 V; — Ip =2 mA; f=1 kHz gr A gr. B greG: OF OWPOW Frecventa de tranzifie Gain bandwidth product — Ve =5 V; — Ic =10 mA; f = 100 MHz Capacitate colector-baza Collector-base capacitance — Vee = 10 V; f= 1 MHz 110 420 125 450 750 1100 150 270 120 150 220 450 | t 6 — Catalog LP.R.S. Binease vol. 11 www.datasheetcatalog.comBC 556, BC 557, BC 558 iP _R. S. BC 559, BC 560 ‘xack WD CARACTERISTICI ELECTRICE (T,= 25°C) ELECTRICAL CHARACTERISTICS (cont. ) | Berauistry Min. Typ. = Unit. | NF Factor de zgomot Noise figure — Veg =5 V; — Ic = 200 pA; | | i | | | R,=2 kO BC 556 10 | dB f£=1 kHz; Af=200 Hz BC 557 10 | dB BC 558 10 | dB BC 559 4/ dB BC 560 4| dB | 5 V; — Ic=200 pA; Q BC 559 4| dB . 15000 Hz BC 560 2) 4B Va Tensiune de zgomot la intrare 4 | Noise voltage at transistor input | — Vee =5 V; — Ic = 200 pA; R, =2 kQ BC 560 0,11) pV f = 10+50 Hz (2) tp/T < 0,02; tp = 0,3ms www. datasheetcatalog.com 32