PNP Silicon High-Voltage Transistors PZTA 92

PZTA 93

● High breakdown voltage

● Low collector-emitter saturation voltage
● Complementary types: PZTA 42, PZTA 43 (NPN)

Type Marking Ordering Code Pin Configuration Package1)

(tape and reel) 1 2 3 4
PZTA 92 PZTA 92 Q62702-Z2037 B C E C SOT-223
PZTA 93 PZTA 93 Q62702-Z2038

Maximum Ratings
Parameter Symbol Values Unit
PZTA 92 PZTA 93
Collector-emitter voltage VCE0 300 200 V
Collector-base voltage VCB0 300 200
Emitter-base voltage VEB0 5
Collector current IC 500 mA
Base current IB 100
Total power dissipation, TS = 124 ˚C Ptot 1.5 W
Junction temperature Tj 150 ˚C
Storage temperature range Tstg – 65 … + 150

Thermal Resistance
Junction - ambient2) Rth JA ≤ 72 K/W
Junction - soldering point Rth JS ≤ 17

1) For detailed information see chapter Package Outlines.

2) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group 1 5.91

 PZTA 92
PZTA 93

Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.

DC characteristics
Collector-emitter breakdown voltage V(BR)CE0 V
IC = 1 mA, IB = 0 PZTA 92 300 – –
PZTA 93 200 – –
Collector-base breakdown voltage V(BR)CB0
IC = 100 µA, IB = 0 PZTA 92 300 – –
PZTA 93 200 – –
Emitter-base breakdown voltage V(BR)EB0 5 – –
IE = 100 µA, IC = 0
Collector-base cutoff current ICB0
VCB = 200 V PZTA 92 – – 250 nA
VCB = 160 V PZTA 93 – – 250 nA
VCB = 200 V, TA = 150 ˚C PZTA 92 – – 20 µA
VCB = 160 V, TA = 150 ˚C PZTA 93 – – 20 µA

Emitter-base cutoff current IEB0 – – 100 nA

VEB = 3 V, IC = 0
DC current gain1) hFE –
IC = 1 mA, VCE = 10 V 25 – –
IC = 10 mA, VCE = 10 V 40 – –
IC = 30 mA, VCE = 10 V 25 – –
Collector-emitter saturation voltage1) VCEsat V
IC = 20 mA, IB = 2 mA PZTA 92 – – 0.5
PZTA 93 – – 0.4
Base-emitter saturation voltage1) VBEsat – – 0.9
IC = 20 mA, IB = 2 mA

AC characteristics
Transition frequency fT – 100 – MHz
IC = 20 mA, VCE = 10 V, f = 100 MHz
Collector-base capacitance Cobo pF
VCB = 20 V, f = 1 MHz PZTA 92 – – 6
PZTA 93 – – 8

1)
Pulse test conditions: t ≤ 300 µs, D = 2 %.

Semiconductor Group 2
 PZTA 92
PZTA 93

Total power dissipation Ptot = f (TA*; TS) Transition frequency fT = f (IC)

* Package mounted on epoxy VCE = 10 V, f = 100 MHz

Permissible pulse load Ptot max / Ptot DC = f (tp) DC current gain hFE = f (IC)
VCE = 10 V

Semiconductor Group 3
 PZTA 92
PZTA 93

Collector cutoff current ICB0 = f (TA) Collector current IC = f (VBE)

VCB = 160 V VCE = 10 V

Semiconductor Group 4