Leading University, Sylhet

Department Of Electric & Electronics Engineering

Course Code: EEE-1316

Course Title: Electronics Lab – 1

Lab Report
Report No: 04

Name of Experiment: Study of Switching Characteristics of Bipolar Junction

Transistors (BJTs)

Submitted to-
MD. Moontasir Rashid
Lecturer
Member, Research and Project Advisory Committee EEE,
Leading University

Submitted by-

Md.Rahatul Islam

Std .ID: 1912070052

Batch: 9(E)
Dept. of EEE

Submission Date: 23/01/2022

Name of Experiment : Switching Characteristics of Bipolar Junction Transistors
(BJTs)

Abstract :

Bipolar transistor amplifiers must be properly biased to operate correctly. In circuits made with individual
devices (discrete circuits), biasing networks consisting of resistors are commonly employed. Much more
elaborate biasing arrangements are used in integrated circuits, for example, band gap voltage references and
current mirrors. The operating point of a device, also known as bias point, quiescent point, or Q-point, is the
point on the out put characteristics that shows the DC collector–emitter voltage (Vce) and the collector current
(Ic) with no input signal applied. The term is normally used in connection with devices such as transistors.

Objective: To study the switching characteristics of Bipolar Junction Transistor (BJT) is main objectives of the
experiment. Theory, methodology and working principle: An n-p-n transistor is composed of two n-type
semiconductors separated by a thin section of p type and p-n-p transistor is formed by two p-sections
separated by a thin section of n-type. The Bipolar Junction Transistors are only turned ON by the input
current, which is given to the base terminal. BJTs can operate in three regions. They are:

1. Cut-off Region: Here the transistor is in ‘OFF’ state i.e., the current flowing through the transistor is zero. It
is basically an open switch.

2. Active Region: Here the transistor acts as an amplifier.

3. Saturation Region: Here the transistor is in fully ‘ON’ state and also works as a closed switch.

To operate the transistor as a switch, the transistor needs to be turned either “fullyon" or “fully-off”. An
ideal transistor switch would have infinite circuit resistance between the Collector and Emitter when “fully-
off”. Even though the transistor is not a perfect switch, in both the cut-off and fully-on states the device has
a low resistance value causing a small saturation voltage across it.

Apparatus:

1. Protoboard. 2. pnp & npn transistor 3. 470 &220 resistors 5. 1 LED

6. DC power supply 7. 2 Multimeters.

Experimental Procedure:

1. Built the circuit according to the circuit diagram. Connected multimetres in the ammeter configuration to
measure the currents in the collector and base portions of the circuit.

2. Slowly increased BAT1 and observed the currents and LED. Recorded the voltage value, base current, and
LED current for the point where LED light is on.

3. Increased BAT1 to 2V and repeated the measurements to observe the incident.

Circuit Diagram:

1/ n-p-n transistor switching circuit:

Fig- 1.1 : Switching with Manual Switch when “Switch = OFF”

Fig- 1.2 : Switching with Manual Switch when “Switch = ON”

1/ p-n-p transistor switching circuit:

Fig- 2.1 : Switching with Manual Switch when “Switch = OFF”

Fig- 1.2 : Switching with Manual Switch when “Switch = ON”

 Fig- 1.2 : Switching with Capacitor.

Discussion & Conclusion:

*The common base small signal amplifier is the best for amplifying voltage because it has the greater voltage
gain .
* The common base emitter small signal amplifier is the second highest voltage gain among the three
amplifiers and it shows a 180 degree phase difference between the input and the output.
* A common collector amplifier is also called and emitter follower.
* The transistor operates in the active region if and only if the base – emitter junction is forward biased and
the base – collector junction is reversed biased, if satisfied , it will serve as an amplifier.