Linear Electronics: Assignment 1

1. Sketch the atomic structure of copper and discuss why it is a good conductor and how its
structure is different from that of germanium, silicon, and gallium arsenide.
a. In your own words, define an intrinsic material, a negative temperature coefficient, and
covalent bonding.
b. Consult your reference library and list three materials that have a negative temperature
coefficient and three that have a positive temperature coefficient.
2. How much energy in joules is required to move a charge of 12 mC through a difference in
potential of 6 V?
a. For part (2), find the energy in electron-volts.
3. If 48 eV of energy is required to move a charge through a potential difference of 3.2 V, determine
the charge involved.
4. Consult your reference library and determine the level of Energy for GaP, ZnS, and GaAsP,
three semiconductor materials of practical value. In addition, determine the written name for each
material.
5. Describe the difference between n-type and p-type semiconductor materials.
a. Describe the difference between donor and acceptor impurities.
6. Describe the difference between majority and minority carriers.
7. Sketch the atomic structure of silicon and insert an impurity of arsenic
8. Consult your reference library and find another explanation of hole versus electron flow.
9. Using both descriptions, describe in your own words the process of hole conduction.
10. Describe in your own words the conditions established by forward- and reverse-bias conditions
on a p–n junction diode and how the resulting current is affected.
11. Describe how you will remember the forward- and reverse-bias states of the p–n junction diode.
That is, how will you remember which potential (positive or negative) is applied to which
terminal?
12. Determine the thermal voltage for a diode at a temperature of 20°C.
13. Given a diode current of 8 mA and n=1, find I s if the applied voltage is 0.5 V and the
temperature is room temperature (25°C).
14. Given a diode current of 6 mA, VT = 26 mV, n = 1, and Is = 1nA, find the applied voltage VD