Course: Smart Materials and Applications

Degree: BSc in Electromechanical Engineering

AASTU
Chapter 2 Note

Electrostriction, Piezoelectric material

Properties

Nov. 2022
 Smart Materials and Applications

2. Restrict domain wall motion. A number

Remanet polarization
3. Addition of second phases (CaZrO3 to
tanδ (losses)
higher value of this will
corresponds to higher
piezoelectric properties
of the material.
of transition ions (Fe3+, Ni2+, Co3+) that
can occupy Ti4+ sites will reduce part of
the dissipation factor due to domain wall
motion.
BaTiO3) will broaden the permittivity-
temperature peak. The resultant
materials may contain regions of
variable composition that contribute a
range of Curie points so that the high
permittivity is spread over a wider
temperature range.

There are there mechanisms in dielectric losses 4. Control crystallite sizes, cations that
- Domain wall vibration have a higher valency than those they
replace, e.g. La3+
- Domain wall movement
in place of Ba2+ or
- Switching the polarization direction of an Nb5+ in place of
entire domain. Ti4+, generally
Considering vibrating domain wall, the losses inhibit crystal
have their origin resulting from small changes growth. This has
in domain shape induced by the applied field. the effect of
raising the
One advantage of polycrystalline ferroelectrics permittivity level
material is by adjusting their composition and below the Curie
microstructure it is possible to modify them. point. Crystal size
is also controlled
1. Shift the Curie point and other transition by sintering
temperatures. It is possible to increase or conditions. It has
decrease Tc by adding Sr2+ or Pb2+ important effects on the electro-optical
instead of Ba2+. Sr2+→ Ba2+ this will behaviour.
lower Tc, Pb2+→ Ba2+ this will increase
Tc. 5. Control the oxygen content and the
valency of the Ti ion. Higher-valency
substituents at low concentrations (< 0.2
cation percent) in BaTiO3 lead to low
resistivity. However, lower valency
substituents, such as Mn3+ on Ti4+ sites,
act as acceptors and enable high
resistivity dielectrics to be sintered in
atmospheres with low oxygen contents.

AASTU Smart Materials and Applications 2

 Smart Materials and Applications
Mixture of Dielectrics
The properties of mixtures depend on the
distribution of the components. The concept of
connectivity is useful in classifying different
types of mixture. The basis of this concept is
that any phase in a mixture may be self
connected in 0D, 1D, 2D or 3D. Thus randomly
dispersed and separated particles have a
connectivity of 0D while the medium
surrounding them has a connectivity of 3D.
Example, capacitor has 2-2 connectivity,
dielectrics 0-3, fiber matrix 1-3 etc.
Heterogeneous materials, such as composites,
consist of clearly distinguishable phases that
show different mechanical and physical material
properties. One important goal of
micromechanics is predicting materials property
based on the response of heterogeneous
constituents on the basis of the geometries and
properties of the individual phases; this task is
known as homogenization. The benefit of
homogenization is that the behavior of a
heterogeneous material can be determined
without resorting to testing it. Such tests may be
expensive and involve a large number of
permutations for example in the case
of composites material the combinations of fiber
and particle volume fractions, fiber and particle
arrangements, and processing histories. Such
properties are often difficult to measure
experimentally.
Voigt and Reuss develop analytical method to
solve micromechanics. Voigt assume that
strains are constant in composite, and follow the
rule of mixtures for stiffness components.
Whereas Reuss consider stresses are constant in
composite, and follow rule of mixtures for
compliance components.
Suppose let us put two phase material together
like material 1 and 2.
AASTU
Applied force in longitudinal direction
Applied force in transverse direction
Longitudinal direction
- E1 = Young’s modulus for material 1
- E2 = Young’s modulus for material 2
- ɛ1= longitudinal direction deformation for material 1
- ɛ2= longitudinal direction deformation for material 2
- A1 = cross-sectional area for material 1
- A2 = cross-sectional area for material 2
- Total area AT = A1 + A2
- V1 = A1L, volume for material 1
- V2 = A2L, volume for material 2
- Total volume VT = V2 +V1
- Volume fraction (Φ) =V/VT
Voigt assume, in longitudinal direction the
resulted deformation is the same in both
material 1 and 2 and applied stress is different.
ɛ = ɛ1 = ɛ2
σ ≠ σ1 ≠ σ2
From constitutional equation
σ = F/A, (F1 + F2)/AT
= (σ1A1 + σ2 A2)/AT
σ = σ1Φ1+ σ2Φ2
But from σ1 = E1ɛ1
σ2 = E2ɛ2, since ɛ = ɛ1 = ɛ2
σ1/E1 = σ2/E2 then σ1 = E1σ2/E2
σ = E1σ2Φ1/E2+ σ2 (1- Φ1)
= σ2[E1Φ1/E2+ (1- Φ1)]
Voigt (at constant ɛ) <C> = ∑Ci Φi
Transverse direction
- Reuss assumptions
σ = σ1 = σ2
ɛ ≠ ɛ1 ≠ ɛ2
Based on the above assumption, it will lead to final
equation of
Reuss (at constant σ) <C> = ∑C-1Φi
Smart Materials and Applications
 Smart Materials and Applications

Lichtenecker’s logarithmic mixture formula piezoelectric material. The phenomenon of

A dielectric mixture model is used commonly electrostriction is expressed by the relationship
for calculating complex permittivity. The x= QP2
fractional volume and the permittivity of each Where: - Q is the electrostriction coefficient
constituent are the main parameters used in P is polarization of the material
calculating the effective permittivity of the x is the deformation.
mixture. Lichtenecker’s logarithmic mixture
formula have been applicable for this purpose. For material ɛr (ɛ/ ɛo) >> 1, then P ≈ D
D = E ɛ = Eɛo + P, ɛo ≈ 0
Then P = D = E ɛ
lnc = ∑Φi lnCi x= Q(E ɛ)2
where:- x = QE2ɛ2
Φi = volume fraction of the ith constituent
Ci = material property of ith constituent
N = number of constituents in the sample
For example
For permittivity Lichtenecker’s logarithmic
mixture formula can be written as:-
lnɛm = Φ1 lnɛ1 + Φ2 lnɛ2

lnK = ∑Φi lnKi = -∑Φi lnK-1

-ln(K-1) = -∑Φi lnK-1
-1
ln(KGeo) = ln(K-1) Geo
(KGeo)-1 = (K-1) Geo
<K>Reuss < <K>Geo <K>Voigt
<K>self-consentient
<K>Hill
Electrostriction
(High permittivity materials)
Electrostriction is a property of all dielectric
materials, and is caused by the presence of
randomly aligned electrical domains within the
material. When an electric is applied to the
dielectric, the opposite sides of the domains
become differently charged and attract each
other, reducing material thickness in the
direction of the applied field and increasing
thickness in the orthogonal directions. The
resulting strain is proportional to the square of
the polarization. Reversal of the electric field
does not reverse the direction of the deformation
but some material shows the development of
electric polarization when they are strained
through an applied stress. These are said to be
In any ferroelectric material when E goes to
zero then both D and P also goes to zero but in
piezoelectric material even if E become zero,
there will be some
residual polarized
domain.
D=P=E ɛ, when E = 0
In this figure it
illustrates that the
mechanical strain
versus electric
field butterfly curve. Important observation
from this curve is that under cyclic loading with
a high frequency the mechanical strain is
increasing even for a decreasing electric field
during unloading provided that the actual
electric field is larger than the coercive field.

AASTU Smart Materials and Applications 4

 Smart Materials and Applications

The various direct and converse-effect

coefficients are properly defined by the
following partial derivatives.

If a piezoelectric plate, polarized in the direction

indicated by P, then a compressive stress causes
a transient current to flow in the external circuit. From thermodynamic argument, it proving that
A tensile stress produces current in the opposite d = d* e = e*
sense. Conversely, the application of an electric g = g* h = h*
field produces strain in the crystal, say a
negative strain, reversal of the field causes a Parameters for Piezoelectric
positive strain.
Ceramics and their Measurement
If it is assumed that the quantities d, g, e, and s
- X= Stress
- D= electric displacement are constants and, then equations of state can be
- E = electric felid written as follows.
- ɛE,ɛD = permittivity
- SE,SD = compliance (C-1)
- CE,CD=stiffness (S-1)
Where SE, SD are the elastic
- e, h, g* and d* = piezoelectric coefficients compliances and the
- x = deformation (in mechanical case we use ‘ɛ’) superscripts denote the
parameters held constant
Piezoelectric properties are described in terms similarly ɛX denotes the
permittivity measured at
of the parameters D, E, X and x, The electrical
constant stress (the usual
response due to the direct effect can be condition) to measure the permittivity at
expressed in terms of strain by:- constant strain ɛx is more difficult to
D = ex or E = hx accomplish. Because ferroelectric ceramics have
and the converse effect can be expressed by non-linear characteristics the effects are more
x = g*D or x = d*E correctly described by the equations
If x and D are assumed to be collinear,
differentiation of equation x = QE2ɛ2 will gives
δx = 2Qɛ2E δE
δx/δE = 2Qɛ2E, since D = ɛE, then
δx/δE = 2QɛD ≈2QɛP, from
D = ɛE = ɛ0E +P
D≈P
and from the differential form of Eq. x = d*E
d* = δx/δE
d* = 2QɛP

AASTU Smart Materials and Applications

 Smart Materials and Applications
The various coefficients which appear in
electromechanical equations of state are not all
independent. For example
d/g = (δx/δE)X/( δx/δD)X = (δD/δE)X = ɛX
x
In similar way, e/h = ɛ and g/h = S D
Electro-mechanical coupling coefficient
The electromechanical coupling coefficient (k)
is a measure of the ability of a piezoelectric
material to transform mechanical energy into
electrical energy, and vice versa.
K2 = (W12)2/ (W1W2 )
Where W12 - piezoelectric energy
W1 - electrical energy
W2 - piezoelectric energy
There are important relationships which follow
from the above equations of state. When a
piezoelectric material is stressed, electrically or
mechanically, the developed energy densities
are, from δD = dδX + ɛXδE and δx = SEδX + dδE
½δDδE = ½[dδXδE + ɛX(δE)2]
½δxδX = ½[SE(δX)2 + dδEδX]
2
The terms involving (δE) and (δX) are the 2
electrical and mechanical energy densities, and
those involving δEδX the piezoelectric energy
densities. It follows equation K2 = (W12)2/ (W1W2 )
K = [(dδXδEdδEδX/(SE(δX)2ɛX(δE)2)0.5] or
K = d/(SEɛX)0.5
The elastic compliance S, and stiffness C has
very different values depending upon whether
the electric field E within the material is
maintained at zero (short-circuited), or whether
the electric displacement D remains constant
(open-circuited). Similarly the permittivity can
be measured with the specimen free to deform,
that is at constant stress ɛX, or in the clamped
state, ɛx. Important relationships between SE and
SD (and between CE and CD) can be derived as
follows.
Equating Eq δx = SEδX + dδE and δx = SDδX + gδD
SEδX + dδE = SDδX + gδD
AASTU
After substituting for δD and δE from equation
δD=dδX+ɛXδE and δE=-gδX+δD/ɛX and from
equation d/g=ɛX, that g=d/ɛX after a little
manipulation it follows…
SD = SE(1- d2/SEɛX)
SD = SE(1- K2) or
CD = CE(1- K2)
N:B if the material is not piezoelectric (K=0) then CD = CE or SD = SE
In a similar way, equating equation δE=-
gδX+δD/ɛX and δE=-hδX+δD/ɛx and substituting for
equation δx = SDδX + gδD, it follows that.
ɛx = ɛX(1-k2)
Rearranging the above equation
k2 = (ɛX - ɛx)/ ɛX or
k2 = ½[(E2ɛX - E2ɛx)/ E2ɛX]
When an electric field is applied to an
unconstrained piezoelectric body then both
electrical and mechanical energies are stored. If
the body is mechanically clamped then only
electrical energy is stored.
Equation k2 = ½[(E2ɛX - E2ɛx)/ E2ɛX] is the basis
for definition of effective coupling coefficient
keff,
(keff)2 = input electrical energy converted into mechanical energy
input electrical energy
Similarly
(keff)2 = input mechanical energy converted into electrical energy
input mechanical energy
In practice the energy transfer electrical-to
mechanical (or vice versa) occurs in a complex
3-dimensional way. The strains caused by
applied electrical or mechanical stresses have
components in three orthogonal directions
piezoelectric material requiring description of
it’s effect in terms of tensors.
Since the elastic compliance (S) and stiffness (C)
are tensor properties, in general Cjk ≠ 1/Sjk, Since
Sjk = Skj and Cjk = Ckj then, only six terms (S11, S12, S13,
S33, S44, S66 or C11, C12, C13, C33, C44, C66) are needed
for poled ceramics. Of these six terms, S66 and
C66 are irrelevants because shear in the plane
perpendicular to the polar axis is produces no
piezoelectric response.
Smart Materials and Applications 6