X2-Class IXTA20N65X2 VDSS = 650V

Power MOSFETTM IXTP20N65X2 ID25 = 20A

IXTH20N65X2 RDS(on)  185m

N-Channel Enhancement Mode

Avalanche Rated
TO-263 (IXTA)

G
S

D (Tab)
Symbol Test Conditions Maximum Ratings TO-220 (IXTP)
VDSS TJ = 25C to 150C 650 V
VDGR TJ = 25C to 150C, RGS = 1M 650 V
VGSS Continuous 30 V
G
VGSM Transient 40 V D
S
D (Tab)
ID25 TC = 25C 20 A
IDM TC = 25C, Pulse Width Limited by TJM 22 A TO-247 (IXTH)
IA TC = 25C 5 A
EAS TC = 25C 400 mJ
dv/dt IS  IDM, VDD  VDSS, TJ  150°C 15 V/ns G
D D (Tab)
PD TC = 25C 290 W S
TJ -55 ... +150 C G = Gate D = Drain
TJM 150 C S = Source Tab = Drain
Tstg -55 ... +150 C
TL Maximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C Features

FC Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb

Md Mounting Torque (TO-220 & TO-247) 1.13 / 10 Nm/lb.in

International Standard Packages

Low RDS(ON) and QG
Weight TO-263 2.5 g 
Avalanche Rated
TO-220 3.0 g 
Low Package Inductance
TO-247 6.0 g
Advantages

Symbol Test Conditions Characteristic Values 

High Power Density
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max. 
Easy to Mount

Space Savings
BVDSS VGS = 0V, ID = 250μA 650 V

VGS(th) VDS = VGS, ID = 250μA 2.5 4.5 V Applications

IGSS VGS = 30V, VDS = 0V 100 nA 

Switch-Mode and Resonant-Mode
Power Supplies
IDSS VDS = VDSS, VGS = 0V 5 A 
DC-DC Converters
TJ = 125C 50 A 
PFC Circuits

AC and DC Motor Drives
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 155 185 m 
Robotics and Servo Controls

© 2018 IXYS CORPORATION, All Rights Reserved DS100868C(6/18)

 IXTA20N65X2 IXTP20N65X2
IXTH20N65X2
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max
gfs VDS = 10V, ID = 0.5 • ID25, Note 1 11 18 S
RGi Gate Input Resistance 3.7 
Ciss 1450 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 1060 pF
Crss 1.4 pF
Effective Output Capacitance
Co(er) Energy related VGS = 0V 64 pF
Co(tr) Time related VDS = 0.8 • VDSS 250 pF

td(on) 19 ns
Resistive Switching Times
tr 27 ns
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
td(off) 47 ns
RG = 10 (External)
tf 20 ns
Qg(on) 27 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 8 nC
Qgd 11 nC
RthJC 0.43 C/W
RthCS TO-220 0.50 C/W
TO-247 0.21 C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max
IS VGS = 0V 20 A

ISM Repetitive, pulse Width Limited by TJM 80 A

VSD IF = IS, VGS = 0V, Note 1 1.4 V

trr IF = 10A, -di/dt = 100A/μs 350 ns

QRM 4.3 C
VR = 100V
IRM 24.6 A

Note 1. Pulse test, t  300s, duty cycle, d 2%.

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537
 IXTA20N65X2 IXTP20N65X2
IXTH20N65X2
o o
Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C
20 45
VGS = 10V
18 8V 40 VGS = 10V

16 7V
35 8V
14
30
I D - Amperes

I D - Amperes
12
25 7V
10
20
8
6V
15
6

4 10
6V

2 5
5V 5V
0 0
0 0.5 1 1.5 2 2.5 3 3.5 4 0 5 10 15 20 25
VDS - Volts VDS - Volts

o
Fig. 4. RDS(on) Normalized to ID = 10A Value vs.
Fig. 3. Output Characteristics @ TJ = 125 C
Junction Temperature
20 4.2
VGS = 10V
18 3.8 VGS = 10V
8V
16 7V 3.4

14 3.0
RDS(on) - Normalized
I D - Amperes

12 6V 2.6 I D = 20A

10 2.2

8 1.8 I D = 10A

6 1.4

4 1.0
5V
2 0.6

0 0.2
0 1 2 3 4 5 6 7 8 9 10 11 -50 -25 0 25 50 75 100 125 150
VDS - Volts TJ - Degrees Centigrade

Fig. 5. RDS(on) Normalized to ID = 10A Value vs. Fig. 6. Normalized Breakdown & Threshold Voltages
Drain Current vs. Junction Temperature
4.5 1.3

VGS = 10V
4.0 1.2
BVDSS / VGS(th) - Normalized

3.5
1.1 BVDSS
o
RDS(on) - Normalized

TJ = 125 C
3.0
1.0
2.5
0.9
2.0

0.8 VGS(th)
1.5 o
TJ = 25 C

1.0 0.7

0.5 0.6
0 5 10 15 20 25 30 35 40 -60 -40 -20 0 20 40 60 80 100 120 140 160
I D - Amperes TJ - Degrees Centigrade

© 2018 IXYS CORPORATION, All Rights Reserved

 IXTA20N65X2 IXTP20N65X2
IXTH20N65X2

Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance
22 30

20 VDS = 10V
18 25

16
20
14

I D - Amperes
I D - Amperes

12
15
10
o
8 TJ = 125 C
10 o
25 C
6
o
- 40 C
4 5
2

0 0
-50 -25 0 25 50 75 100 125 150 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
TC - Degrees Centigrade VGS - Volts

Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode

35 100
o
VDS = 10V TJ = - 40 C 90
30
80

25 70
o
g f s - Siemens

25 C
I S - Amperes

60
20
50
15 o
125 C 40
o
TJ = 125 C
10 30
o
20 TJ = 25 C
5
10

0 0
0 5 10 15 20 25 30 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
I D - Amperes VSD - Volts

Fig. 11. Gate Charge Fig. 12. Capacitance

10 10,000

9 VDS = 325V

8 I D = 10A 1,000
Capacitance - PicoFarads

I G = 10mA Ciss
7

6 100
VGS - Volts

5
C oss
4 10

2 1
Crss
1 f = 1 MHz

0 0
0 4 8 12 16 20 24 28 1 10 100 1,000
QG - NanoCoulombs VDS - Volts

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
 IXTA20N65X2 IXTP20N65X2
IXTH20N65X2

Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area
14 100

12 RDS(on) Limit

100μs
10
10
EOSS - MicroJoules

I D - Amperes
8
1
6

1ms
4 o
0.1 TJ = 150 C
10ms
o
TC = 25 C DC
2
Single Pulse

0 0.01
0 100 200 300 400 500 600 1 10 100 1,000
VDS - Volts VDS - Volts

Fig. 15. Maximum Transient Thermal Impedance

1

0.1
Z(th)JC - K / W

0.01

0.001
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width - Second

© 2018 IXYS CORPORATION, All Rights Reserved

 IXTA20N65X2 IXTP20N65X2
IXTH20N65X2
TO-263 Outline

1 - Gate
2,4 - Drain
3 - Source

TO-220 Outline

1 - Gate
2,4 - Drain
3 - Source

TO-247 Outline

1 - Gate
2,4 - Drain
3 - Source

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS REF: T_20N65X2(Y4-S602) 12-12-17

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