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HuaYi Microelectronics HY3210P - C110583
HuaYi Microelectronics HY3210P - C110583
HuaYi Microelectronics HY3210P - C110583
Pin Description
Features
• 100V/120A
RDS(ON) = 6.8 mΩ (typ.) @ VGS=10V
• 100% avalanche tested D
S G
D
S
G
TO-220FB-3L TO-220FB-3M
•
TO-263-2L
Lead Free and Green Devices Available
(RoHS Compliant)
D
S
G
D
S
Applications
G
TO-3PS-3L TO-3PS-3M
• Switching application D
Package Code
P M B
HY3210 HY3210 HY3210 P : TO-220FB-3L M : TO-220FB-3M
ÿ
YYXXXJWW G ÿ
YYXXXJWW G ÿ
YYXXXJWW G B: TO-263-2L PS: TO-3PS-3L
PM: TO-3PS-3M
PS PM
HY3210 HY3210 Date Code Assembly Material
ÿ
YYXXXJWW G ÿ
YYXXXJWW G YYXXX WW G : Lead Free Device
Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. HOOYI
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
1 www.hooyi.cc
141225
HY3210P/M/B/PS/PM
HY3210
Symbol Parameter Test Conditions Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 100 - - V
VDS=100V, VGS=0V - - 1
IDSS Zero Gate Voltage Drain Current µA
TJ=85°C - - 10
VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 2.0 3.0 4.0 V
IGSS Gate Leakage Current VGS=±25V, VDS=0V - - ±100 nA
RDS(ON)* Drain-Source On-state Resistance VGS=10V, IDS=60A - 6.8 8.5 mΩ
Diode Characteristics
VSD * Diode Forward Voltage ISD=60A, VGS=0V - 0.8 1 V
trr Reverse Recovery Time - 46 - ns
ISD=60A, dlSD/dt=100A/µs
Qrr Reverse Recovery Charge - 98 - nC
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HY3210P/M/B/PS/PM
HY3210
Symbol Parameter Test Conditions Unit
Min. Typ. Max.
Dynamic Characteristics
RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 1.7 - Ω
Ciss Input Capacitance - 4922 -
VGS=0V,
Coss Output Capacitance VDS=25V, - 902 - pF
Frequency=1.0MHz
Crss Reverse Transfer Capacitance - 508 -
td(ON) Turn-on Delay Time - 23 -
Tr Turn-on Rise Time VDD=50V, RG= 6 Ω, - 35 -
IDS =60A, VGS=10V, ns
td(OFF) Turn-off Delay Time - 77 -
Tf Turn-off Fall Time - 44 -
Gate Charge Characteristics
Qg Total Gate Charge - 120 -
VDS=80V, VGS=10V,
Qgs Gate-Source Charge - 17 - nC
IDS=60A
Qgd Gate-Drain Charge - 28 -
Note * : Pulse test ; pulse width ≤300µs, duty cycle≤2%.
.
3
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HY3210P/M/B/PS/PM
120
240
limited by package
200
90
160 75
120 60
45
80
30
40
15
o
TC=25 C o
TC=25 C,VG=10V
0 0
0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 160 180 200
100us
100
it
Lim
1ms
n)
s(o
Rd
10ms
10
DC
o
TC=25 C
0.1
0.01 0.1 1 10 100 500
Duty = 0.5
Normalized Effective Transient
0.2
0.1
0.1
0.05
0.01
0.02
0.01
0.001
0.0001
0.0001 0.001 0.01 0.1 1 10
S uare Wave Pulse Duration sec
4
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HY3210P/M/B/PS/PM
160 9.5
140
VGS= 6,7,8,9,10V
VGS =10V
100
7.5
5V
80
6.5
60 4.5V
40
5.5
20
0 4.5
0 1 2 3 4 5 6 0 30 60 90 120 150
16 1.6
IDS=60A IDS =250µA
1.4
RDS(ON) - On - Resistance (mΩ)
14
1.2
12
1.0
10
0.8
8
0.6
6
0.4
4 0.2
4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150 175
5
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HY3210P/M/B/PS/PM
1.8
1.2
1.0
1
0.8
0.6
0.4
o
RON@Tj=25 C: 6.8mΩ
0.2 0.1
-50 -25 0 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
11000 10
Frequency=1MHz VDS= 80V
10000 9
IDS= 60A
9000
VGS - Gate-source Voltage (V)
8
8000
C - Capacitance (pF)
7
7000
6
6000
Ciss 5
5000
4
4000
3000 3
2000 2
Coss
1000 Crss 1
0 0
0 5 10 15 20 25 30 35 40 0 15 30 45 60 75 90 105 120
6
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HY3210P/M/B/PS/PM
VDS
L VDSX(SUS)
tp
DUT VDS
IAS
RG
VDD
VDD
tp IL EAS
0.01Ω
tAV
VDS
RD
V
DS
DUT 90%
VGS
RG
VDD
10%
tp
VGS
td(on) tr td(off) tf
7
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HY3210P/M/B/PS/PM
Package Information
TO-220FB-3L
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HY3210P/M/B/PS/PM
TO-220FB-3M
9 www.hooyi.cc
HY3210P/M/B/PS/PM
TO-263-2L
MM INCH
SYMBOL
MIN NOM MAX MIN NOM MAX
A 4.40 4.57 4.70 0.173 0.180 0.185
A1 1.22 1.27 1.32 0.048 0.050 0.052
A2 2.59 2.69 2.79 0.102 0.106 0.110
A3 0.00 0.10 0.20 0.000 0.004 0.008
b 0.77 0.813 0.90 0.030 0.032 0.035
b1 1.20 1.270 1.36 0.047 0.050 0.054
c 0.34 0.381 0.47 0.013 0.015 0.019
D1 8.60 8.70 8.80 0.339 0.343 0.346
E 10.00 10.16 10.26 0.394 0.400 0.404
E2 10.00 10.10 10.20 0.394 0.398 0.402
e 2.54 BSC 0.100 BSC
H 14.70 15.10 15.50 0.579 0.594 0.610
H2 1.17 1.27 1.40 0.046 0.050 0.055
L 2.00 2.30 2.60 0.079 0.091 0.102
L1 1.45 1.55 1.70 0.057 0.061 0.067
L2 2.50 REF 0.098 REF
L4 0.25 BSC 0.010 BSC
0° 5° 8° 0° 5° 8°
1 5° 7° 9° 5° 7° 9°
2 1° 3° 5° 1° 3° 5°
ΦP1 1.40 1.50 1.60 0.055 0.059 0.063
DEP 0.05 0.10 0.20 0.002 0.004 0.008
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HY3210P/M/B/PS/PM
TO-3PS-3L
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HY3210P/M/B/PS/PM
TO-3PS-3M
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HY3210P/M/B/PS/PM
Classification Profile
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HY3210P/M/B/PS/PM
Customer Service
Worldwide Sales and Service: sales@hooyi.cc
Technical Support: Technology@hooyi.cc
Xi’an Hooyi Semiconductor Technology Co., Ltd.
East Side of 2# Plant,No.105,5th Fengcheng Road,Economic and Technological Development Zone,Xi'an,China
TEL: (86-029) 86685706
FAX: (86-029) 86685705
E-mail: sales@hooyi.cc
Web net: www.hooyi.cc
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