Name: Pratamesh Kumbhar

Roll No: 11040

PRN no: 22010662

Division: K

Batch: K2

Date: 10/05/21

Experiment No. 1

Determina on of Band Gap of a given Semiconductor

Title: Determina on of Band gap of a given Semiconductor.

Aim: To determine the band gap of a semiconductor.

Apparatus: Oven, thermometer, thermistor, milliammeter, ba ery.

Diagram:

PROCEDURE:

1. Connect the circuit as shown in the diagram.

2. Measure the normal temperature and corresponding leakage current.

3. Start Oven.
4. Measure current from room temperature to 75°C, in steps of 5°C each.

5. Measurements can also be carried out as the thermistor cools down from 75°C to
35°C in steps of 5°C each.

6. Calculate lnI and convert temperature t in °C to T in K, i.e. T = t+273 and 1/T.

7. Plot a graph of lnI vs. 1/T and find the slope of graph, as m.

8. Subs tute m in the formula 𝐸𝑔 = −2𝑚𝑘. Use 𝑘 = 8.6 × 10−5 𝑒𝑉⁄𝐾 to get 𝐸𝑔 in eV.

9. Calculate the error in the measurement of 𝐸𝑔.

Observa on Table:

Least count of thermometer = 1°C Least

count of milliammeter = 0.5 mA

Graph and Calcula on:

Here, m = Σ(Xi-X)Yi/Σ (Xi-X)2 =

-3711.96

∆m = [ 1/ (n-2) . Σ di 2/ Σ (xi - ̅ )2 ]1/2 = 78.511852

c = Y-mX = 13.82206

𝐸𝑔 = |2𝑚𝑘| and ∆𝐸𝑔 = |2∆𝑚𝑘| Result:

𝐸𝑔 = 0.63845712 eV ∆𝐸𝑔
= 0.013504039 eV
Conclusion:
A er all the calcula ons given in the experiment the energy of the semiconductor was
found to be Eg= 0.63845712 eV. On plo ng the graph of LnI V/S 1/T we get the
slope of graph as m= -3711.96.

It was concluded that the band gap of the semiconductor tends to decrease with
increase in temperature.

Ques ons:

1) Co2O3 and Si have a band gap of 1.5 and 1.12eV, respec vely.

(i) For a given applied voltage, which material will have larger current through it at a
given temperature? (Assume that the value of C0 is the same for both the materials)
Solu on:

As we know, I = Coe-Eg/2KT

Let, I1 and I2 be the current through Co2O3 and Si respec vely when voltage is
applied.

I1 = Coe-1.5/2KT

I2 = Coe-1.12/2KT
Dividing both the equa ons we

get,

I1/I2 = e-1.5/e-1.12
On simplifying we get,

I1/I2 = e1.12/e1.5 (As e1.5>e1.12)

Therefore,

I2 >I1
Hence, More current passes through Si.

(ii) Which material will have a larger slope for lnI versus 1/T (K-1) graph? Why?

Solu on:
 We know,

slope (m) = -Eg/2K

So, the slope is

directly propor onal to

nega ve og Eg value.

Therefore,

Si material will have larger slope as -1.12/2K > -1.5/2K.

Hence, Si material will have larger slope.

2) Diamond and Si have a band gap of ~5eV and 1.12 eV, respec vely.

(i) Find the temperature 𝑇 at which the resistance of diamond will be equal to
that of Silicon at 300K, i.e. 𝑅𝑆𝑖𝑙𝑖𝑐𝑜𝑛(300𝐾) = 𝑅𝑑𝑖𝑎𝑚𝑜𝑛𝑑(𝑇). (Assume that the
value of C0 is the same for both the materials) Solu on:

As we know from Ohm’s law V=IR, which

implies R=V/I

5/ Idiamond = 1.12/ Isilicon

Also, I = Coe-Eg/2KT

e-5/2KT =

e- 1.12/2K(300) 1.12

On solving the above equa on and taking log on both sides,

we get,

T= 1411.63 K

Therefore, at T= 1411.63 K resistance of Diamond will be equal to resistance of Si at

300 K.
(ii) Find the temperature at which the resistance of Silicon will be equal to that
of
diamond at 300K, i.e. 𝑅𝑑𝑖𝑎𝑚𝑜𝑛𝑑(300𝐾) = 𝑅𝑆𝑖𝑙𝑖𝑐𝑜𝑛(𝑇). (Assume that the value of C0 is
the same for both the materials) Solution:

As we know from Ohm’s law V=IR, which

implies R=V/I

5/ Idiamond = 1.12/ Isilicon

Also, I = Coe-Eg/2KT e-
5/2K(300)

= 5

e- 1.12/2KT 1.12

On solving the above equa on and taking log on both sides,

we get,

T = 68.889 K

Therefore, at T=68.899 K resistance of silicon will be equal to resistance of diamond

at 300 K.