ence 2) ee ne-P = n; ar XW U4 Extrinsic Semiconductor °— As Tt is a maleriol with wspori ies. Donors atoms + atoms hat provide the Dllice (s)) aith extra electrons (such as @Q=-O=9 P & As) @ 1 We silicon will become @®= @=G) an n-Wype silicon , Ny is the donor ‘aloms, con cat tvadien Acceptor atoms provide Be host material vith holes . ©-O-9 © Ny is Se acceptin atoms concentration @=O°© he Gi wll become a phipe Sie @=O=6) majority Cawiers ——e holes minorh Carriers ——> elections AsoEx 3 A Si sample at 308k is doped with arsenic af 16 <3 hosphoros 5x10 “cm, phosphoros) a) whet Aype of gi wegt 7 h-Npe Ss b) Final (n, FP) Ae Carriers concentréhon . 0 1b lb -3 M, =/t. +N, = 10 + 5x10 = SxI0 cm , No n, Lu 2 ~ Pons Ni => P- La = it ont ° ° : Atom ahvcture — Amorphous Sroclove Crystal bine Pay crystalline shoctire ahodhire |