This document asks several questions about semiconductor physics concepts: it asks about direct and indirect semiconductors, the difference between depletion and diffusion capacitance in a diode, the expression for depletion width and potential across a PN junction given doping concentrations, the expression for carrier concentration in intrinsic and extrinsic semiconductors, and requests a short note on bipolar junction transistors, light emitting diodes, and Ohmic and Schottky contacts.
This document asks several questions about semiconductor physics concepts: it asks about direct and indirect semiconductors, the difference between depletion and diffusion capacitance in a diode, the expression for depletion width and potential across a PN junction given doping concentrations, the expression for carrier concentration in intrinsic and extrinsic semiconductors, and requests a short note on bipolar junction transistors, light emitting diodes, and Ohmic and Schottky contacts.
This document asks several questions about semiconductor physics concepts: it asks about direct and indirect semiconductors, the difference between depletion and diffusion capacitance in a diode, the expression for depletion width and potential across a PN junction given doping concentrations, the expression for carrier concentration in intrinsic and extrinsic semiconductors, and requests a short note on bipolar junction transistors, light emitting diodes, and Ohmic and Schottky contacts.
2. What is the difference between depletion and diffusion capacitance in a
diode? 3. ND is the doping concentration of base wafer and NA is the diffusion concentration. Find the expression for depletion width and potential across the junction. 4. Find the expression for carrier concentration in intrinsic (/ extrinsic) semiconductor. 5. Write a short note on: a. Bipolar junction transistor b. Light Emitting Diode c. Ohmic and Schottky (Rectifying) contacts
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