PD - 95135

IRF9952PbF
HEXFET® Power MOSFET
l Generation V Technology N-CHANNEL MOSFET

l Ultra Low On-Resistance S1

1 8
D1 N-Ch P-Ch
l Dual N and P Channel MOSFET G1
2 7
D1
l Surface Mount 3 6
VDSS 30V -30V
S2 D2
l Very Low Gate Charge and
4 5
Switching Losses G2 D2

RDS(on) 0.10Ω 0.25Ω

P-CHANNEL MOSFET

l Fully Avalanche Rated

Top View
l Lead-Free
Recommended upgrade: IRF7309 or IRF7319
Description Lower profile/smaller equivalent: IRF7509
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.

The SO-8 has been modified through a customized

SO-8
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.

Symbol Maximum Units

N-Channel P-Channel
Drain-Source Voltage V DS 30
V
Gate-Source Voltage V GS ± 20
TA = 25°C 3.5 -2.3
Continuous Drain Current ID
TA = 70°C 2.8 -1.8
A
Pulsed Drain Current IDM 16 -10
Continuous Source Current (Diode Conduction) IS 1.7 -1.3
TA = 25°C 2.0
Maximum Power Dissipation PD W
TA = 70°C 1.3
Single Pulse Avalanche Energy EAS 44 57 mJ
Avalanche Current IAR 2.0 -1.3 A
Repetitive Avalanche Energy EAR 0.25 mJ
Peak Diode Recovery dv/dt ‚ dv/dt 5.0 -5.0 V/ ns
Junction and Storage Temperature Range TJ, TSTG -55 to + 150 °C

Thermal Resistance Ratings

Parameter Symbol Limit Units
Maximum Junction-to-Ambient RθJA 62.5 °C/W
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IRF9952PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V (BR)DSS Drain-to-Source Breakdown Voltage N-Ch 30 — — VGS = 0V, ID = 250µA
V
P-Ch -30 — — VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient N-Ch — 0.015 — Reference to 25°C, ID = 1mA
V/°C
P-Ch — 0.015 — Reference to 25°C, ID = -1mA
— 0.08 0.10 VGS = 10V, ID = 2.2A „
N-Ch
RDS(ON) Static Drain-to-Source On-Resistance — 0.12 0.15 VGS = 4.5V, ID = 1.0A „
Ω
— 0.165 0.250 VGS = -10V, ID = -1.0A „
P-Ch
— 0.290 0.400 VGS = -4.5V, ID = -0.50A „
V GS(th) Gate Threshold Voltage N-Ch 1.0 — — VDS = VGS, I D = 250µA
V
P-Ch -1.0 — — VDS = VGS, I D = -250µA
gfs Forward Transconductance N-Ch — 12 — VDS = 15V, I D = 3.5A „
S
P-Ch — 2.4 — VDS = -15V, I D = -2.3A „
N-Ch — — 2.0 VDS = 24V, V GS = 0V
I DSS Drain-to-Source Leakage Current P-Ch — — -2.0 VDS = -24V, VGS = 0V
µA
N-Ch — — 25 VDS = 24V, V GS = 0V, TJ = 125°C
P-Ch — — -25 VDS = -24V, VGS = 0V, TJ = 125°C
I GSS Gate-to-Source Forward Leakage N-P –– — ±100 nA VGS = ±20V
Qg Total Gate Charge N-Ch — 6.9 14
N-Channel
P-Ch — 6.1 12
I D = 1.8A, VDS = 10V, VGS = 10V
Qgs Gate-to-Source Charge N-Ch — 1.0 2.0
nC „
P-Ch — 1.7 3.4
P-Channel
Qgd Gate-to-Drain ("Miller") Charge N-Ch — 1.8 3.5
I D = -2.3A, V DS = -10V, VGS = -10V
P-Ch — 1.1 2.2
td(on) Turn-On Delay Time N-Ch — 6.2 12
N-Channel
P-Ch — 9.7 19
VDD = 10V, ID = 1.0A, R G = 6.0Ω,
tr Rise Time N-Ch — 8.8 18
RD = 10Ω
P-Ch — 14 28
ns „
td(off) Turn-Off Delay Time N-Ch — 13 26
P-Channel
P-Ch — 20 40
VDD = -10V, ID = -1.0A, RG = 6.0Ω,
tf Fall Time N-Ch — 3.0 6.0
RD = 10Ω
P-Ch — 6.9 14
Ciss Input Capacitance N-Ch — 190 — N-Channel
P-Ch — 190 — V GS = 0V, VDS = 15V, ƒ = 1.0MHz
Coss Output Capacitance N-Ch — 120 — pF
P-Ch — 110 — P-Channel
N-Ch — 61 — V GS = 0V, VDS = -15V, ƒ = 1.0MHz
Crss Reverse Transfer Capacitance
P-Ch — 54 —

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
N-Ch — — 1.7
IS Continuous Source Current (Body Diode) P-Ch — — -1.3 A
N-Ch — — 16
ISM Pulsed Source Current (Body Diode)  P-Ch — — 16
N-Ch — 0.82 1.2 V TJ = 25°C, IS = 1.25A, V GS = 0V ƒ
VSD Diode Forward Voltage P-Ch — -0.82 -1.2 TJ = 25°C, IS = -1.25A, VGS = 0V ƒ
N-Ch — 27 53 ns N-Channel
trr Reverse Recovery Time P-Ch — 27 54 TJ = 25°C, IF =1.25A, di/dt = 100A/µs
N-Ch — 28 57 nC P-Channel „
Qrr Reverse Recovery Charge P-Ch — 31 62 TJ = 25°C, IF = -1.25A, di/dt = 100A/µs

Notes:
 Repetitive rating; pulse width limited by „ Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 23 )
‚ N-Channel ISD ≤ 2.0A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Surface mounted on FR-4 board, t ≤ 10sec.
P-Channel ISD ≤ -1.3A, di/dt ≤ 84A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
ƒ N-Channel Starting TJ = 25°C, L = 22mH RG = 25Ω, IAS = 2.0A. (See Figure 12)
P-Channel Starting TJ = 25°C, L = 67mH RG = 25Ω, IAS = -1.3A.
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 N-Channel IRF9952PbF

100 100
VGS VGS
TOP 15V TOP 15V
10V 10V
7.0V 7.0V
5.5V 5.5V
4.5V 4.5V
I D , Drain-to-Source Current (A)

I D, Drain-to-Source Current (A)

4.0V 4.0V
3.5V 3.5V
BOTTOM 3.0V BOTTOM 3.0V

10 10

3.0V
3.0V
20µs PULSE WIDTH 20µs PULSE WIDTH
TJ = 25°C A TJ = 150°C
1 1 A
0.1 1 10 0.1 1 10
V DS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 100
ISD , Reverse Drain Current (A)
I D , Drain-to-Source Current (A)

10

TJ = 25°C TJ = 150°C
10
TJ = 150°C
TJ = 25°C
1

V DS = 10V
20µs PULSE WIDTH VGS = 0V
1 0.1 A
A
3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.4 0.6 0.8 1.0 1.2 1.4

VGS , Gate-to-Source Voltage (V) VSD , Source-to-Drain Voltage (V)

Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-Drain Diode

Forward Voltage
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IRF9952PbF N-Channel

2.0 0.12

RDS (on) , Drain-to-Source On Resistance (Ω)

ID = 2.2A
RDS(on) , Drain-to-Source On Resistance

1.5 0.10
VGS = 4.5V
(Normalized)

1.0 0.08

VGS = 10V
0.5 0.06

VGS = 10V
0.0 0.04 A
-60 -40 -20 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12
TJ , Junction Temperature ( °C)
I D , Drain Current (A)

Fig 5. Normalized On-Resistance Fig 6. Typical On-Resistance Vs. Drain

Vs. Temperature Current

0.16 100
ID
E AS , Single Pulse Avalanche Energy (mJ)
RDS (on) , Drain-to-Source On Resistance (Ω)

TOP 0.89A
0.14 1.6A
80 BOTTOM 2.0A
0.12

0.10
60

0.08
I D = 3.5A
40
0.06

0.04
20

0.02

0.00 A 0 A
0 3 6 9 12 15 25 50 75 100 125 150
Starting T J , Junction Temperature (°C)
V GS , Gate-to-Source Voltage (V)

Fig 7. Typical On-Resistance Vs. Gate Fig 8. Maximum Avalanche Energy

Voltage Vs. Drain Current
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 N-Channel IRF9952PbF

350 20
V GS = 0V, f = 1MHz ID = 1.8A
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd VDS = 10V

VGS , Gate-to-Source Voltage (V)

300
C oss = C ds + C gd
16
C, Capacitance (pF)

250
Ciss

200 Coss 12

150
8

100 Crss

4
50

0 A 0
1 10 100 0 2 4 6 8 10
VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC)

Fig 9. Typical Capacitance Vs. Fig 10. Typical Gate Charge Vs.
Drain-to-Source Voltage Gate-to-Source Voltage

100

0.50
Thermal Response (Z thJA )

0.20
10
0.10

0.05

0.02 PDM
1 0.01
t1

SINGLE PULSE t2
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRF9952PbF P-Channel

100 100
VGS VGS
TOP - 15V TOP - 15V
- 10V - 10V
- 7.0V - 7.0V
- 5.5V
-I D , Drain-to-Source Current (A)

- 5.5V

-I D , Drain-to-Source Current (A)

- 4.5V - 4.5V
- 4.0V - 4.0V
- 3.5V - 3.5V
BOTTOM - 3.0V BOTTOM - 3.0V
10 10

1 1

-3.0V -3.0V

20µs PULSE WIDTH 20µs PULSE WIDTH

TJ = 25°C A TJ = 150°C
0.1 0.1 A
0.1 1 10 0.1 1 10
-VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V)

Fig 12. Typical Output Characteristics Fig 13. Typical Output Characteristics

100 100
-ISD , Reverse Drain Current (A)
-ID , Drain-to-Source Current (A)

10 10
TJ = 25°C TJ = 150°C

T J = 150°C
TJ = 25°C

1 1

VDS = -10V
20µs PULSE WIDTH VGS = 0V
0.1 0.1 A
A
3.0 4.0 5.0 6.0 7.0 8.0 0.4 0.6 0.8 1.0 1.2 1.4
-VGS , Gate-to-Source Voltage (V) -VSD , Source-to-Drain Voltage (V)

Fig 14. Typical Transfer Characteristics Fig 15. Typical Source-Drain Diode
Forward Voltage
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 P-Channel IRF9952PbF

2.5

RDS(on) , Drain-to-Source On Resistance ( Ω )

2.0
ID = -1.0A
R DS(on) , Drain-to-Source On Resistance

2.0
1.5
(Normalized)

1.5
VGS = -4.5V
1.0

1.0

0.5
0.5

VGS = -10V
VGS = -10V
0.0 0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 A
0.0 1.0 2.0 3.0 4.0 5.0
TJ , Junction Temperature ( °C)
-I D , Drain Current (A)

Fig 16. Normalized On-Resistance Fig 17. Typical On-Resistance Vs. Drain
Vs. Temperature Current

0.80 150
RDS(on) , Drain-to-Source On Resistance ( Ω )

ID
EAS , Single Pulse Avalanche Energy (mJ)

TOP -0.58A
-1.0A
120 BOTTOM -1.3A
0.60

90

0.40
I D = -2.3A
60

0.20
30

0.00 A 0
0 3 6 9 12 15 25 50 75 100 125 150
Starting TJ , Junction Temperature ( °C)
-V GS , Gate-to-Source Voltage (V)

Fig 18. Typical On-Resistance Vs. Gate Fig 19. Maximum Avalanche Energy
Voltage Vs. Drain Current
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IRF9952PbF P-Channel

400 20
V GS = 0V, f = 1MHz ID = -2.3A
C iss = Cgs + C gd , Cds SHORTED VDS =-10V

-VGS , Gate-to-Source Voltage (V)

C rss = C gd
C oss = C ds + C gd 16
300
C, Capacitance (pF)

Ciss
12
Coss
200

Crss
100
4

0 A 0
1 10 100 0 2 4 6 8 10
-VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC)

Fig 20. Typical Capacitance Fig 21. Typical Gate Charge Vs.
Vs. Gate-to-Source Voltage
Drain-to-Source Voltage

100

0.50
Thermal Response (Z thJA )

0.20
10
0.10

0.05

0.02 PDM
1 0.01
t1

SINGLE PULSE t2
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)

Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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 IRF9952PbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
INCHES MILLIMET ERS
DIM
D B MIN MAX MIN MAX
A 5 A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
b .013 .020 0.33 0.51
8 7 6 5 c .0075 .0098 0.19 0.25
6 H D .189 .1968 4.80 5.00
E
0.25 [.010] A E .1497 .1574 3.80 4.00
1 2 3 4
e .050 BAS IC 1.27 BAS IC
e1 .025 BAS IC 0.635 BAS IC
H .2284 .2440 5.80 6.20
K .0099 .0196 0.25 0.50
6X e
L .016 .050 0.40 1.27
y 0° 8° 0° 8°

e1 K x 45°
A
C y

0.10 [.004]
8X b A1 8X L 8X c

0.25 [.010] C A B 7

F OOT PRINT
NOT ES :
1. DIMENS IONING & T OLE RANCING PE R AS ME Y14.5M-1994. 8X 0.72 [.028]
2. CONT ROLLING DIME NS ION: MILLIMET ER
3. DIMENS IONS ARE S HOWN IN MILLIMET E RS [INCHES ].
4. OUT LINE CONFORMS T O JEDE C OUT LINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROT RUS IONS NOT T O EXCE ED 0.15 [.006].
6.46 [.255]
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROT RUS IONS NOT T O EXCE ED 0.25 [.010].
7 DIMENS ION IS T HE LE NGT H OF LEAD FOR S OLDERING T O
A S UB S T RAT E.

3X 1.27 [.050] 8X 1.78 [.070]

SO-8 Part Marking

EXAMPLE : T HIS IS AN IRF 7101 (MOS FET )

DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
Y = LAS T DIGIT OF T HE YEAR
XXXX WW = WEEK
INT ERNAT IONAL F7101 A = AS S EMBLY S IT E CODE
RECT IF IER LOT CODE
LOGO
PART NUMBER

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IRF9952PbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)

TERMINAL NUMBER 1

12.3 ( .484 )
11.7 ( .461 )

8.1 ( .318 )
7.9 ( .312 ) FEED DIRECTION

NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00
(12.992)
MAX.

14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/04
10 www.irf.com
IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
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Except as otherwise explicitly approved by Infineon
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Technologies, Infineon Technologies’ products may
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