APM4412K ®

N-Channel Enhancement Mode MOSFET

Features Pin Description

D
•
D
30V/12A, D
D
RDS(ON) = 9mΩ (typ.) @ VGS = 10V
RDS(ON) =12mΩ (typ.) @ VGS = 4.5V
S
• Super High Dense Cell Design S
S
G
• Reliable and Rugged
Top View of SOP−8
• SOP-8 Package
• Lead Free and Green Devices Available D D DD
(RoHS Compliant)

Applications
G

• Power Management in Notebook Computer,

Portable Equipment and Battery Powered
Systems. S S S

N-Channel MOSFET

Ordering and Marking Information

APM4412 Package Code

K : SOP-8
Assembly Material Operating Junction Temperature Range
Handling Code C : -55 to 150 oC
Temperature Range Handling Code
Package Code TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device

APM4412
APM4412 K : XXXXX XXXXX - Date Code

Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  Sinopower Semiconductor, Inc. 1 www.sinopowersemi.com

Rev. B.3 - Jan., 2011
APM4412K ®

Absolute Maximum Ratings (TA = 25°C unless otherwise noted)

Symbol Parameter Rating Unit

VDSS Drain-Source Voltage 30
V
VGSS Gate-Source Voltage ±20
TA=25°C 12
IDa Continuous Drain Current (VGS=10V)
TA=70°C 9 A
a
IDM 300µs Pulsed Drain Current (VGS=10V) 45
a
IS Diode Continuous Forward Current 2
b
A
IAR Avalanche Current 16.5
EARb Repetitive Avalanche Energy (L=0.3mH) 40 mJ
TJ Maximum Junction Temperature 150
°C
TSTG Storage Temperature Range -55 to 150
TA=25°C 2.5
PD* Maximum Power Dissipation W
TA=70°C 1.6
RθJAa,c Thermal Resistance-Junction to Ambient T≤10s 50
°C/W
RθJL Thermal Resistance-Junction to Lead Steady State 25
Note a：Surface Mounted on 1in2 pad area, t ≤ 10sec.
Note b：UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature TJ=25oC).
Note c：Maximum under Steady State conditions is 75°C/W.

Electrical Characteristics (TA = 25°C unless otherwise noted)

APM4412K
Symbol Parameter Test Conditions Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 30 - - V
VDS=24V, VGS=0V - - 1
IDSS Zero Gate Voltage Drain Current µA
TJ=85°C - - 30
VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 1.3 1.7 2.5 V
IGSS Gate Leakage Current VGS=±20V, VDS=0V - - ±100 nA
d VGS=10V, IDS=12A - 9 12
RDS(ON) Drain-Source On-state Resistance mΩ
VGS=4.5V, IDS=8A - 12 16
d
VSD Diode Forward Voltage ISD=2.3A, VGS=0V - 0.75 1.3 V
e
Gate Charge Characteristics
Qg Total Gate Charge - 24.5 32
VDS=15V, VGS=10V,
Qgs Gate-Source Charge - 4 - nC
IDS=12A
Qgd Gate-Drain Charge - 8 -

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Rev. B.3 - Jan., 2011
APM4412K ®

Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)

APM4412K
Symbol Parameter Test Conditions Unit
Min. Typ. Max.
e
Dynamic Characteristics
RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 2.3 - Ω
Ciss Input Capacitance VGS=0V, - 1470 -
Coss Output Capacitance VDS=25V, - 233 - pF
Crss Reverse Transfer Capacitance Frequency=1.0MHz - 157 -
td(ON) Turn-on Delay Time - 13 24
Tr Turn-on Rise Time VDD=15V, RL=15Ω, - 9 17
IDS=1A, VGEN=10V, ns
td(OFF) Turn-off Delay Time RG=6Ω - 36 66
Tf Turn-off Fall Time - 12 23
trr Reverse Recovery Time - 14 - ns
ISD=12A, dISD/dt =100A/µs
Qrr Reverse Recovery Charge - 5 - nC
Note d : Pulse test ; pulse width≤300µs, duty cycle≤2%.
Note e : Guaranteed by design, not subject to production testing.

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Rev. B.3 - Jan., 2011
APM4412K ®

Typical Operating Characteristics

Power Dissipation Drain Current

3.0 14

12
2.5

10

ID - Drain Current (A)

2.0
Ptot - Power (W)

8
1.5
6

1.0
4

0.5
2
o o
TA=25 C TA=25 C,VG=10V
0.0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160

Tj - Junction Temperature (°C) Tj - Junction Temperature (°C)

Safe Operation Area Thermal Transient Impedance

100 2
Normalized Transient Thermal Resistance

1
Duty = 0.5
it
Lim
n)

0.2
s(o

10
ID - Drain Current (A)

Rd

300us 0.1
1ms 0.1 0.05

1 0.02
10ms

0.01
100ms

1s 0.01
0.1 Single Pulse
DC

2
Mounted on 1in pad
o o
TA=25 C RθJA : 50 C/W
0.01 1E-3
0.01 0.1 1 10 100 1E-4 1E-3 0.01 0.1 1 10 30

VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)

Copyright  Sinopower Semiconductor, Inc. 4 www.sinopowersemi.com

Rev. B.3 - Jan., 2011
APM4412K ®

Typical Operating Characteristics (Cont.)

Output Characteristics Drain-Source On Resistance

45 20

40 18

RDS(ON) - On - Resistance (mΩ)

VGS= 4,5,6,7,8,9,10V
35 16
ID - Drain Current (A)

30 14 VGS=4.5V

25 12
3.5V
20 10 VGS=10V

15 8

10 6
3V
5 4

0 2
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 9 18 27 36 45

VDS - Drain-Source Voltage (V) ID - Drain Current (A)

Transfer Characteristics Gate Threshold Voltage

45 2.0
IDS =250µA
40 1.8
Normalized Threshold Voltage

35 1.6

1.4
ID - Drain Current (A)

30
1.2
25
1.0
20
0.8
o
15 Tj=125 C
0.6
o
10 Tj=-55 C
o 0.4
Tj=25 C
5 0.2

0 0.0
0 1 2 3 4 5 6 -50 -25 0 25 50 75 100 125 150

VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)

Copyright  Sinopower Semiconductor, Inc. 5 www.sinopowersemi.com

Rev. B.3 - Jan., 2011
APM4412K ®

Typical Operating Characteristics (Cont.)

Drain-Source On Resistance Source-Drain Diode Forward

2.00 50
VGS = 10V
1.75 IDS = 12A
Normalized On Resistance

o
1.50 Tj=150 C

IS - Source Current (A)

10
1.25

o
1.00 Tj=25 C

0.75

0.50

1
0.25
o
RON@Tj=25 C: 9mΩ
0.00 0.5
-50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V)

Capacitance Gate Charge

2400 10
Frequency=1MHz VDS= 15V
9
2100 ID = 12A
VGS - Gate - source Voltage (V)

8
1800
7
C - Capacitance (pF)

Ciss
1500
6

1200 5

4
900
3
600
2
300 Coss
Crss 1

0 0
0 5 10 15 20 25 30 0 5 10 15 20 25

VDS - Drain - Source Voltage (V) QG - Gate Charge (nC)

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Rev. B.3 - Jan., 2011
APM4412K ®

Package Information
SOP-8
-T- SEATING PLANE < 4 mils
D

SEE VIEW A

E1

h X 45

e b c
A2

0.25
A

GAUGE PLANE
SEATING PLANE
A1

L
VIEW A

S SOP-8
Y
M MILLIMETERS INCHES
B
O
L MIN. MAX. MIN. MAX.
A 1.75 0.069

A1 0.10 0.25 0.004 0.010

A2 1.25 0.049

b 0.31 0.51 0.012 0.020

c 0.17 0.25 0.007 0.010

D 4.80 5.00 0.189 0.197

E 5.80 6.20 0.228 0.244

E1 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
h 0.25 0.50 0.010 0.020

L 0.40 1.27 0.016 0.050

0 0° 8° 0° 8°

Note: 1. Follow JEDEC MS-012 AA.

2. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion or gate burrs shall not exceed 6 mil per side.
3. Dimension “E” does not include inter-lead flash or protrusions.
Inter-lead flash and protrusions shall not exceed 10 mil per side.

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Rev. B.3 - Jan., 2011
APM4412K ®

Carrier Tape & Reel Dimensions

OD0 P0 P2 P1 A

E1
F

W
B0

K0 A0 OD1 B A
B

SECTION A-A

T
SECTION B-B

d
H
A

T1

Application A H T1 C d D W E1 F
12.4+2.00 13.0+0.50
330.0±2.00 50 MIN. -0.00 -0.20 1.5 MIN. 20.2 MIN. 12.0±0.30 1.75±0.10 5.5±0.05

SOP-8 P0 P1 P2 D0 D1 T A0 B0 K0
4.0±0.10 8.0±0.10 2.0±0.05 1.5+0.10 1.5 MIN. 0.6+0.00 6.40±0.20 5.20±0.20 2.10±0.20
-0.00 -0.40
(mm)

Devices Per Unit

Package Type Unit Quantity

SOP-8 Tape & Reel 2500

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Rev. B.3 - Jan., 2011
APM4412K ®

Taping Direction Information

SOP-8

USER DIRECTION OF FEED

Classification Profile

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Rev. B.3 - Jan., 2011
APM4412K ®

Classification Reflow Profiles

Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Preheat & Soak
100 °C 150 °C
Temperature min (Tsmin)
150 °C 200 °C
Temperature max (Tsmax)
60-120 seconds 60-120 seconds
Time (Tsmin to T smax) (ts)

Average ramp-up rate

3 °C/second max. 3°C/second max.
(T smax to TP)
Liquidous temperature (TL) 183 °C 217 °C
Time at liquidous (tL ) 60-150 seconds 60-150 seconds
Peak package body Temperature
See Classification Temp in table 1 See Classification Temp in table 2
(T p)*
Time (tP)** within 5°C of the specified
20** seconds 30** seconds
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max.

Time 25°C to peak temperature 6 minutes max. 8 minutes max.

* Tolerance for peak profile Temperature (T p) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.

Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)

3 3
Package Volume mm Volume mm
Thickness <350 ≥350
<2.5 mm 235 °C 220 °C
≥2.5 mm 220 °C 220 °C

Table 2. Pb-free Process – Classification Temperatures (Tc)

3 3 3
Package Volume mm Volume mm Volume mm
Thickness <350 350-2000 >2000
<1.6 mm 260 °C 260 °C 260 °C
1.6 mm – 2.5 mm 260 °C 250 °C 245 °C
≥2.5 mm 250 °C 245 °C 245 °C

Reliability Test Program

Test item Method Description
SOLDERABILITY JESD-22, B102 5 Sec, 245°C
HOLT JESD-22, A108 1000 Hrs, Bias @ 125°C
PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C
TCT JESD-22, A104 500 Cycles, -65°C~150°C

Customer Service
Sinopower Semiconductor, Inc.
5F, No. 6, Dusing 1St Rd., Hsinchu Science Park,
Hsinchu, 30078, Taiwan
TEL: 886-3-5635818 Fax: 886-3-5642050

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Rev. B.3 - Jan., 2011