A Gunn diode relies on the Gunn effect to generate microwave or millimeter-wave oscillations. It exhibits negative differential resistance when electrons transit between mobility states under a high electric field within its crystal structure. This allows it to generate high-frequency signals ranging from 10 GHz to several hundred GHz. Gunn diodes are used in applications like radar systems, wireless communication equipment, and testing devices.
A Gunn diode relies on the Gunn effect to generate microwave or millimeter-wave oscillations. It exhibits negative differential resistance when electrons transit between mobility states under a high electric field within its crystal structure. This allows it to generate high-frequency signals ranging from 10 GHz to several hundred GHz. Gunn diodes are used in applications like radar systems, wireless communication equipment, and testing devices.
A Gunn diode relies on the Gunn effect to generate microwave or millimeter-wave oscillations. It exhibits negative differential resistance when electrons transit between mobility states under a high electric field within its crystal structure. This allows it to generate high-frequency signals ranging from 10 GHz to several hundred GHz. Gunn diodes are used in applications like radar systems, wireless communication equipment, and testing devices.
A Gunn diode relies on the Gunn effect to generate microwave or millimeter-wave oscillations. It exhibits negative differential resistance when electrons transit between mobility states under a high electric field within its crystal structure. This allows it to generate high-frequency signals ranging from 10 GHz to several hundred GHz. Gunn diodes are used in applications like radar systems, wireless communication equipment, and testing devices.
A Gunn diode, also known as a Gunn oscillator or transferred
electron device (TED), is a semiconductor device used primarily in microwave and millimeter-wave frequency generation. It was named after physicist John Battiscombe Gunn, who discovered the Gunn effect in 1963.
1. Working Principle: Gunn diodes rely on the Gunn effect, which is a
quantum mechanical phenomenon. In a semiconductor material with a specific structure, known as a Gallium Arsenide (GaAs) or similar compound, electrons can transit from a low-mobility to a high- mobility state when subjected to a high electric field. This transition occurs in a specific region of the diode's crystal structure.
2. Negative Differential Resistance (NDR) : One of the most notable
characteristics of a Gunn diode is its negative differential resistance region. In this region, the current decreases as the voltage across the diode increases. This is the key to its oscillation properties.
3. Oscillation: When a voltage is applied across a Gunn diode within
the NDR region, it can produce microwave or millimeter-wave signals. The diode generates a high-frequency oscillation due to the negative differential resistance, making it useful for various applications in radiofrequency electronics. 4. Frequency Range: Gunn diodes are typically used for frequencies ranging from about 10 GHz to several hundred GHz. This range makes them valuable for applications such as radar systems, communication equipment, and even some types of electronic testing.
5. Applications: Gunn diodes are used in a variety of applications,
including:
o Signal Generation: They are commonly employed as local
oscillators in microwave receivers and transmitters. o Radar Systems: Gunn diodes are used in radar systems for target detection, tracking, and imaging. o Millimeter-Wave Communication: They play a role in point-to- point communication systems and are a key component in building wireless backhaul links. o Testing and Measurement: Gunn diodes can be used in equipment for testing and measuring microwave signals.