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PM100 Power Modules
PM100 Power Modules
PM100 Power Modules
MITSUBISHI
<INTELLIGENT
<INTELLIGENT
POWER
POWER
MODULES>
MODULES>
PM100RSD120
PM100RSD120
FLAT-BASE
FLAT-BASE
TYPE
TYPE
INSULATED
INSULATED
PACKAGE
PACKAGE
PM100RSD120 FEATURE
a) Adopting new 4th generation planar IGBT chip, which per-
formance is improved by 1µm fine rule process.
b) Using new Diode which is designed to get soft reverse
recovery characteristics.
c) Keeping the package compatibility.
The layout/position of both terminal pin and mounting hole
is same as S-series 3rd generation IPM.
• 3φ 100A, 1200V Current-sense IGBT for 15kHz switching
• 50A, 1200V Current-sense regenerative brake IGBT
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for over-
current, short-circuit, over-temperature & under-voltage
(P-Fo available from upper leg devices)
• Acoustic noise-less 18.5/22kW class inverter application
• UL Recognized Yellow Card No.E80276(N)
File No.E80271
APPLICATION
General purpose inverter, servo drives and other motor controls
135 ±1
120.5 ±0.5 4- φ5.5 24.1 Terminal code
40.68 LABEL MOUNTING
HOLES 1. VUPC 11. WP
2. UFO 12. VWP1
9 11 13 15 17 19
11
16.5
8. VVP1 18. WN
9. VWPC 19. FO
10. WFO
B PPS
39.5
10.5
φ2.54
5
13
U V W
3.22 3-2
0.5 ±0.3 0.5
51.5 26 26 4-R6 Screwing depth
6-M5 NUTS Min9.0
11.6
10.6
A : DETAIL
+1.0
24.1 –0.5
23.1
21.3
7.7
4
Jul. 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100RSD120
FLAT-BASE TYPE
INSULATED PACKAGE
Rfo=1.5kΩ
WP VWP1 VP VVP1 UP VUP1
Br Fo VNC W N VN1 VN UN VWPC WFO VVPC VFO VUPC UFO
Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Fo Vcc
TEMP
Gnd Si Out Gnd Si Out Gnd Si Out Gnd Si Out Gnd Si Out Gnd Si Out Gnd Si Out
Th
B N W V U P
BRAKE PART
Symbol Parameter Condition Ratings Unit
VCES Collector-Emitter Voltage VD = 15V, VCIN = 15V 1200 V
IC Collector Current TC = 25°C 50 A
ICP Collector Current (Peak) TC = 25°C 100 A
PC Collector Dissipation TC = 25°C 416 W
VR(DC) FWDi Rated DC Reverse Voltage TC = 25°C 1200 V
IF FWDi Forward Current TC = 25°C 50 A
Tj Junction Temperature –20 ~ +150 °C
CONTROL PART
Symbol Parameter Condition Ratings Unit
Applied between : VUP1-VUPC
VD Supply Voltage 20 V
VVP1-VVPC, VWP1-VWPC, VN1-VNC
Applied between : UP-VUPC, VP-VVPC
VCIN Input Voltage 20 V
WP-VWPC, UN • VN • WN • Br-VNC
Applied between : UFO-VUPC, VFO-VVPC, WFO-VWPC
VFO Fault Output Supply Voltage 20 V
FO-VNC
IFO Fault Output Current Sink current at UFO, VFO, WFO, FO terminals 20 mA
Jul. 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100RSD120
FLAT-BASE TYPE
INSULATED PACKAGE
TOTAL SYSTEM
Symbol Parameter Condition Ratings Unit
Supply Voltage Protected by VD = 13.5 ~ 16.5V, Inverter Part,
VCC(PROT) Tj = 125°C Start 800 V
OC & SC
VCC(surge) Supply Voltage (Surge) Applied between : P-N, Surge value or without switching 1000 V
Module Case Operating
TC (Note-1) –20 ~ +100 °C
Temperature
Tstg Storage Temperature –40 ~ +125 °C
Viso Isolation Voltage 60Hz, Sinusoidal, Charged part to Base, AC 1 min. 2500 Vrms
(Note-1) TC measurement point is as shown below. (Base plate depth 3mm)
Tc
P
N
63mm
B
U V W
THERMAL RESISTANCES
Limits
Symbol Parameter Test Condition Unit
Min. Typ. Max.
Rth(j-c)Q Inverter IGBT part (per 1 element), (Note-1) — — 0.21
Rth(j-c)F Inverter FWDi part (per 1 element), (Note-1) — — 0.35
Rth(j-c)Q Brake IGBT part (Note-1) — — 0.30
Rth(j-c)F Junction to case Thermal Brake FWDi part (Note-1) — — 0.80
Rth(j-c’)Q Resistances Inverter IGBT part (per 1 element), (Note-2) — — 0.13 °C/W
Rth(j-c’)F Inverter FWDi part (per 1 element), (Note-2) — — 0.21
Rth(j-c’)Q Brake IGBT part (Note-2) — — 0.22
Rth(j-c’)F Brake FWDi part (Note-2) — — 0.36
Rth(c-f) Contact Thermal Resistance Case to fin, Thermal grease applied (per 1 module) — — 0.018
(Note-2) TC measurement point is just under the chips.
If you use this value, Rth(f-a) should be measured just under the chips.
Jul. 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100RSD120
FLAT-BASE TYPE
INSULATED PACKAGE
BRAKE PART
Limits
Symbol Parameter Test Condition Unit
Min. Typ. Max.
Collector-Emitter VD = 15V, IC = 50A Tj = 25°C — 2.65 3.30
VCE(sat) V
Saturation Voltage VCIN = 0V, Pulsed (Fig. 1) Tj = 125°C — 2.60 3.25
VFM FWDi Forward Voltage IF = 50A (Fig. 2) — 2.5 3.5 V
Collector-Emitter Tj = 25°C — — 1
ICES VCE = VCES, VCIN = 15V (Fig. 4) mA
Cutoff Current Tj = 125°C — — 10
CONTROL PART
Limits
Symbol Parameter Test Condition Unit
Min. Typ. Max.
VN1-VNC — 60 82
ID Circuit Current VD = 15V, VCIN = 15V mA
VXP1-VXPC — 15 20
Vth(on) Input ON Threshold Voltage Applied between : UP-VUPC, VP-VVPC, WP-VWPC 1.2 1.5 1.8
V
Vth(off) Input OFF Threshold Voltage UN • VN • WN • Br-VNC 1.7 2.0 2.3
Inverter part Tj = 25°C 228 345 —
VD = 15V (Fig. 5,6) Tj = 125°C 145 — —
OC Over Current Trip Level A
Break part
75 — —
–20 ≤ Tj ≤ 125°C, VD = 15V (Fig. 5,6)
Inverter part — 340 —
SC Short Circuit Trip Level –20≤ Tj ≤ 125°C, VD = 15V (Fig. 5,6) A
Brake part — 144 —
toff(OC) Over Current Delay Time VD = 15V (Fig. 5,6) — 10 — µs
OT Base-plate Trip level 111 118 125
Over Temperature Protection °C
OTr Temperature detection, VD = 15V Reset level — 100 —
UV Supply Circuit Under-Voltage Trip level 11.5 12.0 12.5
–20 ≤ Tj ≤ 125°C V
UVr Protection Reset level — 12.5 —
IFO(H) — — 0.01
Fault Output Current VD = 15V, VFO = 15V (Note-3) mA
IFO(L) — 10 15
Minimum Fault Output Pulse
tFO VD = 15V (Note-3) 1.0 1.8 — ms
Width
(Note-3) Fault output is given only when the internal OC, SC, OT & UV protection.
Fault output of OC, SC and UV protection operate by upper and lower arms.
Fault output of OT protection operate by lower arm.
Fault output of OC, SC protection given pulse.
Fault output of OT, UV protection given pulse while over level.
Jul. 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100RSD120
FLAT-BASE TYPE
INSULATED PACKAGE
IN IN
VCIN
Fo
V Ic VCIN
Fo
V –Ic
(0V) (15V)
VD (all) Ic
U,V,W, (N) OC
IC
VD (all)
toff (OC) Constant Current
Fig. 4 ICES Test
P, (U,V,W) Short Circuit Current
IN
Fo VCC Constant Current
VCIN SC
IC
U,V,W, (N)
VD (all) IC
VD
VCINP
U,V,W
Vcc
VD
VCINN N
Ic
VCINP
0V t
VCINN
0V t
tdead tdead tdead
Jul. 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100RSD120
FLAT-BASE TYPE
INSULATED PACKAGE
P
20k ≥10µ VUP1
Vcc
→ UFO Rfo OUT
Fo +
VD IF
UP Si
In
–
VUPC U
GND GND
≥0.1µ
VVP1
Vcc
VFO Rfo OUT
Fo
VD VP
Si
In
VVPC V
GND GND M
VWP1
Vcc
WFO Rfo OUT
Fo
VD WP Si
In
VWPC W
GND GND
20k
→ Vcc OUT
≥10µ
IF Fo
UN Si
In
GND GND
≥0.1µ
N
20k TEMP Th
→ Vcc
≥10µ OUT
IF Fo Si
VN
In
GND GND
≥0.1µ
20k VN1
→ Vcc
≥10µ
Fo OUT
VD IF
WN Si
In
GND GND
≥0.1µ VNC B
4.7k Vcc
OUT
Fo
Br Si
In
5V 1k GND GND
Fo Rfo
Jul. 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100RSD120
FLAT-BASE TYPE
INSULATED PACKAGE
VD = 17V
100
2
COLLECTOR-EMITTER
15V
80
13V 1.5
60
1
40
0.5
20
Tj = 25°C
Tj = 125°C
0 0
0 0.5 1 1.5 2 2.5 3 0 20 40 60 80 100 120
COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. VD) CHARACTERISTICS SWITCHING TIME CHARACTERISTICS
(TYPICAL) (TYPICAL)
3 101
SATURATION VOLTAGE VCE (sat) (V)
VCC = 600V
SWITCHING TIME tc(on), tc(off) (µs)
7
5 VD = 15V
2.5
4 Tj = 25°C
COLLECTOR-EMITTER
3 Tj = 125°C
2 2 Inductive load
1.5 100
7 tc(off)
5 tc(on)
1 tc(on)
4
tc(off)
3
0.5 IC = 100A
Tj = 25°C 2
Tj = 125°C
0 10–1 1
12 13 14 15 16 17 18 10 2 3 4 5 7 102 2 3 4 5 7 103
(TYPICAL) (TYPICAL)
101 102
7
7 5
SWITCHING TIME ton, toff (µs)
5 4
4 3
2 ESW(off)
3 ESW(on)
2 101
toff 7 ESW(off)
5
4
100 ton 3
7 2
ESW(on)
5 100 VCC = 600V
4 VCC = 600V 7
3 VD = 15V 5 VD = 15V
Tj = 25°C 4 Tj = 25°C
2 3
Tj = 125°C 2
Tj = 125°C
Inductive load Inductive load
10–1 1 10–1 1
10 2 3 4 5 7 102 2 3 4 5 7 103 10 2 3 4 5 7 102 2 3 4 5 7 103
Jul. 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100RSD120
FLAT-BASE TYPE
INSULATED PACKAGE
trr
101 10–1 101
7 7 7
5 5 VCC = 600V 5
4 4 4
3 3 VD = 15V 3
Tj = 25°C
2 Tj = 25°C 2 Tj = 125°C 2
Tj = 125°C Inductive load
100 10–2 1 100
0 0.5 1 1.5 2 2.5 3 10 2 3 4 5 7 102 2 3 4 5 7 103
TRANSIENT THERMAL
ID VS. fc CHARACTERISTICS IMPEDANCE CHARACTERISTICS
(TYPICAL) (IGBT PART)
120 101
VD = 15V 7
5
THERMAL IMPEDANCE Zth (j – c)
Tj = 25°C 3
NORMALIZED TRANSIENT
CIRCUIT CURRENT ID (mA)
100 2
N-side
100
7
80 5
3
2
60 10–1
7
5
3
40 2
10–2
P-side 7
20 5
3 Single Pulse
2 Per unit base = Rth(j – c)Q = 0.21°C/W
0 10–3
0 5 10 15 20 25 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7100 2 3 5 7101
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi PART)
101
7
5
THERMAL IMPEDANCE Zth (j – c)
3
NORMALIZED TRANSIENT
2
100
7
5
3
2
10–1
7
5
3
2
10–2
7
5
3 Single Pulse
2 Per unit base = Rth(j – c)F = 0.35°C/W
10–3
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7100 2 3 5 7101
TIME (s)
Jul. 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100RSD120
FLAT-BASE TYPE
INSULATED PACKAGE
50 2.5
VD = 17V
COLLECTOR-EMITTER
15V
40 2
13V
30 1.5
20 1
10 0.5 VD = 15V
Tj = 25°C
Tj = 125°C
0 0
0 0.5 1 1.5 2 2.5 3 0 10 20 30 40 50 60
COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. VD) CHARACTERISTICS DIODE FORWARD CHARACTERISTICS
(TYPICAL) (TYPICAL)
COLLECTOR RECOVERY CURRENT –IC (A)
3 102
SATURATION VOLTAGE VCE (sat) (V)
VD = 15V
7
2.5 5
4
COLLECTOR-EMITTER
3
2 2
1.5 101
7
1 5
4
3
0.5 IC = 50A
Tj = 25°C 2 Tj = 25°C
Tj = 125°C Tj = 125°C
0 100
12 13 14 15 16 17 18 0 0.5 1 1.5 2 2.5
3 3
NORMALIZED TRANSIENT
NORMALIZED TRANSIENT
2 2
100 100
7 7
5 5
3 3
2 2
10–1 10–1
7 7
5 5
3 3
2 2
10–2 10–2
7 7
5 5
3 Single Pulse 3 Single Pulse
2 Per unit base = Rth(j – c)Q = 0.30°C/W 2 Per unit base = Rth(j – c)F = 0.80°C/W
10–3 10–3
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7100 2 3 5 7101 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7100 2 3 5 7101
Jul. 2005
Mouser Electronics
Authorized Distributor
Mitsubishi Electric:
PM100RSD120