The document summarizes experiments comparing signal amplification using common base and common emitter configurations of BJT transistors. For a 1 kHz sine wave at 500 mV, the common base configuration amplified the signal to 900-1000 mV, while the common emitter configuration achieved 800-900 mV. DC bias voltages also differed between the configurations, with common base showing 5V and common emitter showing 7V. The experiments aimed to precisely measure and analyze the transistor circuits.
The document summarizes experiments comparing signal amplification using common base and common emitter configurations of BJT transistors. For a 1 kHz sine wave at 500 mV, the common base configuration amplified the signal to 900-1000 mV, while the common emitter configuration achieved 800-900 mV. DC bias voltages also differed between the configurations, with common base showing 5V and common emitter showing 7V. The experiments aimed to precisely measure and analyze the transistor circuits.
The document summarizes experiments comparing signal amplification using common base and common emitter configurations of BJT transistors. For a 1 kHz sine wave at 500 mV, the common base configuration amplified the signal to 900-1000 mV, while the common emitter configuration achieved 800-900 mV. DC bias voltages also differed between the configurations, with common base showing 5V and common emitter showing 7V. The experiments aimed to precisely measure and analyze the transistor circuits.
Based on data we gathered on the desired experiments we find out on the
experiments on 1 khz frequency sweeping of 500mv per div/ we can amplify bjt by times 2 of the desired signals of means we got a 900mv- 1000mv or of sinewave amplification on the two types of transistor configurations on common base and common emitter configuration on the common base emitter we got sa desired amplitude of 800mv - 900mv on frequency sweep of 500mv per div @ 1khz sine wave on how ever on the side of common base we got the frequency of 900mv - 1000mv of sine wave amplitude on the oscilloscope because we used some configuration at common emitter of attenuation circuit to smooth of the signal to little less on the experiments and also we try to get the assumed and precise measurement of the desired circuit on common base we got a dc bias of 5v per div on common emitter we got the voltage measurements of 7v per div so on so for but we try to analyze more further on the experiment using d lorenzo machine. That weave got analyzing principle of 0v vdc on and acv of .9v or 900mv to 1 or 1.1v or 1000mv pk-pk power of to-92s single transistor npn type transistor measurement of common base and common emitter configuration of the experiments of same as practical analyze on oscilloscope as shown pic diagram of the desired experiment