Industrial Electronics

Topic 9 – Diode

A Introduction

Most of the electronics devices are made from the combination of the p-
type materials and n-type materials. The type of device formed is
determined by how the p-type and n-type materials are joined together.
The p-n junction is the simplest of all semiconductor device.

In the topic, we will discuss on the operation of the p-n junction and explain
the forward and reverse bias.

B Definition of PN Junction Diode

1 A diode is made by joining P- type and N-type materials.

The junction of a diode is the region where the P-type material ends and
the N-type material begin.

Junction
P N

( + ) Holes (-) Electrons

Diode Symbol

P junction (+)
or N junction ( ─ )
Anode Temnial or
Cathode Terminal

2 Depletion region

2. At the instant when junction is formed, diffusion takes place. That is, some
1 holes will move from the P-type material into the N-type material.

Likewise some electrons will move from the N-type material into the P-type
materials.

These holes and free electrons, which move across the junction,
recombine and produce a depletion region at the junction.

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Industrial Electronics
Topic 9 – Diode

Depletion
Region

P N

Barrier
Potential

2. The depletion region is where there is no mobile majority charge carrier.

2
It contains positively and negatively charge atoms on either sides of the
junction.

3 Barrier Potential Difference ( or Barrier Voltage )

The opposite charges that build up on each side of the junction create a
barrier voltage or potential barrier, which resist any further free electrons
and holes from crossing the junction.

The barrier voltage is about 0.3V for a Germanium junction and 0.7V for a
Silicon junction.

C Operation of Diode

1 Forward Bias

When the P-type material is connected to the positive terminal of the

supply and the N-type material is connected to the negative terminal of the
supply, the diode is said to be forward biased.

Large Forward
Current flows

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Industrial Electronics
Topic 9 – Diode

The potential of the external supply forces:

1. Holes from P-type material
2. Electrons from N-type material to cross the junction.

A large current called the forward current flows through the diode.

2 Reverse Bias

When P-type material is connected to the negative terminal of the supply

and the N-type material is connected to the positive terminal of the supply,
the diode is said to be reverse biased.

The external voltage supply causes the majority carriers:

1. Holes from P-type material

2. Electrons from N-type material

To move away from the junction, as a result, the depletion region at the
junction becomes larger.

When the diode is reversed-biased, a very small current (due to the

minority carriers) called the reverse current or leakage current will flow
only.

Reverse or
Leakage Current
flows

3 Diode Reverse and Forward Bias Characteristics Curve

3. Diode Forward Bias Characteristic Curve

1
When the amount of forward bias voltage equals the barrier voltage, there
is no longer any depletion region and the junction can conduct current.

This barrier potential difference, V F is 0.3V for Germanium diode and 0.7 V
for Silicon diode.

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Industrial Electronics
Topic 9 – Diode

IFF (mA)

Forward-bias
VBreakdown region

VR VF

Reverse
Reverse- 0.7V
Voltage
biased
region

IR

3. Diode Reverse Bias Characteristic Curve

2
When the diode is reversed-biased, a very small current (due to the
minority carriers) called the reverse current or leakage current will flow
only.

This means that, the reverse biased resistance of the diode is very high.

When the reverse bias voltage is high enough, it will cause damage or
breakdown PN junction. This reverse voltage is called the breakdown
voltage.

For any diode, the Peak Inverse Voltage (PIV) is the maximum safe
reverse voltage of a diode specified by the manufacturer.

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Industrial Electronics
Topic 9 – Diode

D Characteristics of a Diode

Forward bias Reverse bias

electric current electric current

P junction (+) or Anode N junction ( ─ ) or Cathode

Temnial Terminal

1 The anode is the P-type material of the diode. The cathode is the N-type
material of the diode.

A diode is a non-linear device. When it is forward biased, the current flows

through it easily since it acts as a very low resistance.

When the diode is forward biased, it acts as a closed switch in series with
a small forward voltage. (0.7V for Silicon)

VF Practical Diode
+ -

RL
IF
+ -

2 When it is reverse biased, current does not flow through it since it now acts
as very high resistance.

When the diode is reverse biased, it acts as an open switch.

VF Practical Diode
+ -

RL
IR
- +

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Industrial Electronics
Topic 9 – Diode

E Reference

The table below shows the maximum ratings for a certain series of rectifier Diodes
(IN4001 through IN4007). These are the absolute maximum values under which the diode
can be operated without damage to the device. For greatest reliability and longer life, the
diode should always be operated well under these maximums. Generally the maximum
ratings are specified at 25 degree Celsius and must be adjusted downward for higher
temperatures.

Rating Symbol Unit

IN4001

IN4002

IN4003

IN4004

IN4005

IN4006

IN4007
Peak repetitive reverse VRRM
voltage
Working peak inverse VRWM 50 100 200 400 600 800 1000 V
voltage
DC blocking voltage VR
Nonrepetitive peak
VRSM 60 120 240 480 720 1000 1200 V
reverse voltage
RMS reverse voltage VR(rms) 35 70 140 280 420 560 700 V
Average rectified forward
current (single-phase,
IO 1.0 A
resistive load, 60Hz,TA =
75°C)
Nonrepetitive peak surge
current ( surge applied at IFSM 30 (for 1 cycle) A
rated load conditions)
Operating and storage
junction temperature TJ, Tstg -65 to +175 °C
range
VRRM The maximum reverse peak voltage that can be applied repetitively cross
the diode. Notice that in this case, it is 50V for the IN4001 and 1KV for the
IN4007.This is the same as PIV rating.
VR The maximum reverse dc voltage that can be applied across the diode.
VRSM The maximum reverse peak value of nonrepetitive voltage that can be applied
across the diode.
IO The maximum average value of a 60 Hz rectified forward current.
IFSM The maximum peak value of nonrepetitive ( one cycle) forward surge current.
TA Ambient temperature (temperature of surrounding air)
TJ The operating junction temperature.
Tstg The storage junction temperature.

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