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Lnamplon
Physics laSS 12
Previous Years' CBSE Board Questions
14.2 density of holes but the crystal maintains
Classification of Metals, charge neutrality. an
overal
Conductors and Semiconductors Reason (R): The charge of
electrons
1.
MCQ
The energy required by an electron to
donor atoms is just equal and opposite to
ionised donor.
donat
that edof theby
jump tne Both Assertion(A) and Reason (R)
forbidden band in silicon at room temperature b (a) are
about Reason (R) is the correct explanation and true
of the
(a) 0.01 eV (b) 0.05 eV Assertion (A).
(c) 0.7 eV (d) 1.1 eV (2023) (b) Both Assertion (A) and Reason (R) are

2.
VSA (1 mark)
The a property of materials C, Si and Ge
depends upon the energy gap between their
conduction and valence bands. (2020)
SA (2marks)
3
What is meant by energy band gap in a solid? Draw
the energy band diagrams for a conductor, an
insulator and a semiconductor. (Term ll2021-22)
4
Distinguish between a metal and an insulator on the
basis of energy band diagrams. (Foreign 2014) (R
SA II (3 marks)
5 Draw a plot showing the variation of resistivity
of a () conductor and (ii) semiconductor, with the
increase in temperature. (2/3,Delhi 2014C)
6. Write any two distinguishing features between
conductors, semiconductors and insulators on the
basis of energy band diagrams. (AI2014) R
14.3 Intrinsic Semiconductor
MCOQ
7. Assertion (A) : The resistance of an intrinsic
semiconductor decreases with increases in its
temperature.
Reason (R):The number of conduction electrons as
well as hole increase in an intrinsic semiconductor
with rise in its temperature.
(a) Both Assertion (A) and Reason (R) are true and
Reason (R) is the correct explanation of the
Assertion (A)
(b) Both Assertion (A) and Reason (R) are true, but
Reason (R) is not the correct explanation of the
Assertion (A)
(c) Assertion (A) is true, but Reason (R) is False.
(d) Assertion (A) is false, but Reason (R) is true.
(2023)
14.4 Extrinsic Semiconductor
MCQ
8 Assertion (A) : In 'n' type semiconductor, number
density of electrons is greater than the number
Reason (R) is not the correct
Assertion (A).
explanationtrue,
of
but
the
(c) Assertion(A) is true, but Reason (R) is false.
(d) Assertion (A) is false and Reason (R) is
false. also
9
(2023)
In an n-type semiconductor, theedonor energy level lies
(a) at the centre of the energy gap.
(b) just below the conduction band.
(c) just above the valance band.
(d) in the conduction band.
10. When the temperature of an n-type semiconducto.
(2020/ R
is increased,then the
(a) number of free electrons increases while th
of the holes decreases.
(b) number of holes increases while that of the free
electrons decreases.
(c) number of free electrons and holes remains
unchanged.
(d) number of both the free electrons and the holes
increase equally. (2020 C)
SAI(2 marks)
11. Name the extrinsic semiconductors formed when
a pure germanium is doped with (i) atrivalent and
(i) pentavalent impurity. Draw the energy band
diagrams of extrinsic semiconductors so formed.
(Term Il 2021-22)
12. What is meant by doping of an instrinsic
semiconductor? Name the two types of atoms used
for doping of Ge/Si. (Term ll 2021-22)
13. Distinguish between 'intrinsic' and 'extrinsic
semiconductors. (Delhi 2015) (
SA II (3 marks)
14. Draw the energy band diagram of (i) n-type, ano
() p-type semiconductors at temperatures T> 0K.
In the case of n-type Si-semiconductor, the donor
energy level is slightly below the bottom o
conduction band whereas in p-type semiconductor.
the acceptor energy level is slightly abovethe top of
valence band. Explain, giving examples, what role do
 and Simple Circuits 385
these
energy levels play in
bands. conduction
(AI2019,
and
AI 2015 valence 14.6 Semiconductor Diode
C) U
) Distinguish between
semiconductors on the n-type and p-type MCQ
basis of energy 21. The threshold voltage for a 100 S2
diagrams. band
i) Compare their pn junction diode used in
womnerature and conduct
at roomivities absolute zero
at
temperature.
the circuit is 0.7 V. The type
of biasing and current in the
(Delhi 2015C) circuit are 0.5 V
4.5 p-nJunction (a) Forward biasing, OA (b) Reverse biasing, 0 A
(C) Forward biasing 5mA (d) Reverse biasing, 2 mA
SAI(3marks) (2023)

16.la)
Explainthe
formation of a p-n junction. 22. Atequilibrium, inap-n junction diode the net current is
(a) due to diffusion of majority charge carriers.
(b) Can we takeone slab of
and physically join it p-type semiconductor
to another
(b) due to drift of minority charge carriers.
(c) zero as diffusion and drift currents are equal
n-type
semiconductor to get ap-n junction? Explain and opposite.
(d) zero as no charge carriers cross the junction.
(2022 ) U) (2020) RJ
Answer the following, giving reason :
Ia) Theresistance of a p-n VSA (1 mark)
junction is low when it is the
23. In an unbiased p-n junction diode, the p-side ofthat
forward biased and is high when it is reversed junction is at potential as compared to
biased. on the n-side of the junction. (2020)
Ih) Doping of intrinsic semiconductors is a necessity 24. How does an increase in doping
concentration
for making electronic devices. affect the width of depletion layer of a p-n junction
diode? (2020)Ap
(Term ll 2021-22)
18. Write the twO processes that take place in the SAT (2 marks)
formation of a p-n junction. Explain with the help 25. Explain the formation of the barrier potential in a
of a diagram, the formation of depletion region and (Term Il 2021-22)(U)
p-n junction.
barrier potential in ap-n junction. (Delhi 2017) (U
OR 26. With the help of the circuit diagram, explain the
working of a silicon p-n junction diode in forward
Explain with the help of the diagram the formation biasing and draw its |-V characteristics. (2020 C)
of depletion region and barrier potential in ap-n 27. Explain the term 'depletion layer' and 'potential
junction. (2/3, Al 2016)
barrier' in a p-njunction diode. How are the (a) width
OR
of depletion layer, and (b) value of potential barrier
Write briefly the important processes that occur affected when the p-n junction is forward biased?
during the formation of p-n junction. With the help (2020)
of necessary diagrams, explain the term barrier 28. Draw VI characteristics of a p-n junction diode.
potential. (Foreign 2015) Explain, why the current under reverse bias is almost
LA (5 marks) independent of the applied voltage up to the critical
voltage. (2020)
19. 0) Agermanium crystal is doped with antimony. With 29. The V- characteristic of a silicon diode is as shown
the help of energy-band diagram, explain how the in the figure. Calculate the resistance of the diode at
conductivity of the doped crystal is affected. (0)/= 15 mAand (ii) V= -10 V
(1) Briefiy explain the two processes ivolved in the 30+
I(mA)
formation of a p-n junction.
(ii) What will the effect of (1) forward biasing, and
(2) reverse biasing be on the width of depletion 20 Silicon
layer in a p-n junction diode? (2023)
formation 15
40. State briefly the processes involved in the
the depletion
of p-n junction explaining clearly how
(2/5, Delhi 2014)
10

region is formed.
OR -10 V

txplain with the help of diagram, how a depletion

0.5 0.70.8

layer and barrier potentialare formed in a junction 1 uA

diode. (3/5, Delhi 2014C) (Foreign 2015) (An
 WtG CBSE
386
Champion
SA II (3 marks)
30. Draw V- characteristics of ap-n junction diode.
Answer the following giving reasons :
SAT (2 marks)
37. Write the
make it
characteristics of a
suitable for rectification
p-n PunhcytsiiocnClasnvhich
(a) Why is the reverse bias current almost
independent of applied voltage up to 38. Give two
difference
(Term l2021-22\
between ahalf wa
breakdown voltage?
(Terwam vle 2021-recih2er2
rectifier.
and a full wave
(b) Why does the reverse current show a sudden
increase at breakdown voltage? (2022 C)(U SAII (3 marks)
Þl. (a) Why is an intrinsic semiconductor deliberated 39. With the help of a circuit
Converted into an extrinsic semiconductor by how a p-n junction diode diWorks
agram,asexplaain
adding impurity atoms? bri2et2y
(b) Explain briefly the two processes that occur in
pn junction region to create a potential barrier.
(2020)
rectifer.

40. ()
(ii)
Draw V- characteristics of ap-n
Differentiate between the junction
(Term l 2021- halfwae
and the breakdown voltage for a d diode.
threshol
Write the property of a junctiondiode. yoltag
32. Explain the formation of potential barrier and
depletion region in ap-n junction diode. What is (iü)
makes it suitablefor rectification diode
effect of applying forward bias on the width of of which
depletion region?
33. In the following diagram. is the
(2020)

forward biased or reverse biased? junction diode 41. Dravw the circuit diagram of
wave
acvoltages.
(a fullTerm Il2021-22)C
explain its working. Also, give the input rectandifier
(Delhi 2019)otput
ww waveforms.
+5V
OR
(1/3, AI2017) (R Astudent wants to use two p-n
junction
to convert alternating current into diodes
diagramshe diwould
rect current.
LA (5 marks) Draw the labelled circuit
34. Draw the circuit arrangement for studying V-l explain how it works. use and
characteristics of a p-n junction diode in (i) forward OR (2/3, 2018)
biasing and (ii) reverse biasing. Draw the typical V
characteristics of asilicon diode. Describe briefly Draw the circuit diagram of a full wave
the following terms : (0) minority carrier injection state how it works. rectifier and
in forward biasing and (ii) breakdown voltage in OR (2/3, Al 2017)
reverse biasing. (2023) Explain briefly, with the help of circuit
35. Explain briefly with the help of necessary diagrams, working of a full wave rectifier. diagram, the
Draw its input and
the forward and the reverse biasing ofa p-n junction output waveforms.
diode. Also draw their characteristic curves in the (Delhi2015C)
two cases. (Delhi 2017) LA (5 marks)
OR
42. () With the help of a circuit diagram, briefly exolain
Using the necessary circuit diagrams, show how the the working of a full-wave rectifier using p-n
V-lcharacteristics of a p-n junction are obtained in junction diodes.
(0) Forward biasing.
(i) Reverse biasing. (Delhi 2014) (ii) Draw V-Icharacteristics of a p-n junction diode.
Explain how these characteristics make a diode
OR suitable for rectification.
Draw the circuit arrangement for studying the V (iii) Carbon and silicon have the same lattice
characteristics of a p-njunction diode in (i) forward structure. Then why is carbon an insulator but
and (i) reverse bias. Briefly explain how the typical silicon a semiconductor?
V-Icharacteristics of a diode are obtained and draw (2023)
these characteristics. (AI 2014C) An 43. Name two important processes involved in the
formationof pn junctiondiode. With the help of a
14.7 Applicationof Junction Diode as a circuit diagram explain the working of junction diode
as a full wave rectifier. Dravw its input and output
Rectifier
waveforms. State the characteristic property of a
VSA (1 mark) junction diode that makes it suitable for rectification.
(2023)
36. The ability of ajunctiondiode to an alternating
voltage, is based on the fact that it allows current to 44. Draw the circuit diagram of a half wave rectifier and
pass only when it is forward biased. (2020)(R explain its working. (AI2016)An
 CBSE Sample Questions
Classificationof) Metals, Conductors obtained and majority charge carriers in it.
(2020-21) Ap
andSemiconductors
14.5 p-n Junction
MCQ
VSA (1mark)
Assertion (A): The electrical conductivity of a junction diode
semiconductorincreases on doping. 4. When a voltage drop across a pn change in
V, the
Reason(R): Doping always increases the
number of 0s increased from 0.70 V to 0.71
What is the dynamic
alectrons in the
semiconductor. the diode current is 10 mA (2020-21) Ap
Both Aand R are true and R is the Correct resistance of diode?
explanation of A. a depletion region of apn
5. How does the width ofconcentration is increased?
RothA and R are true and R is NOT the correct Junction vary if doping
explanation of A. (2020-21)(U
Ic) A is true but R is false. Diode as a
Id) Ais false and Ris also false. (2022-23) 14.7 Application of Junction
44 Extrinsic Semiconductor Rectifier
VSA (1 mark) output
SAI (2 marks) rectification, what is the
6. In half wave Hz. (2020-21)
2
In apure semiconductor crystal of Si, if antimony is frequency if input frequency is 25
added then what type of extrinsic semiconductor SA I (3 marks)
is obtained. Draw the energy band diagram of this can
diagram how an ac signal
7 Explain with aproper(pulsating) signal with output
extrinsic semiconductor so formed. (Term l| 2021-22)
be converted into dc than the input frequency
band diagram when intrinsic frequency as double output
3 Draw the energy Give its input and
semiconductor (Ge) is doped with impurity atoms of using pn junction diode. l|2021-22) (Ev)
(Term
waveforms.
Antimony (Sb). Name the extrinsic semiconductor so

Detailed SOLUTIONS
Electron
energy

Previous Years' CBSE Board Questiors Semiconductors E,<3eV

1. (d): For silicon it is 1.1 eV. |Ey

2. Conductivity
bandandconduction completely
3 The energygapbetweenvalence solid. 4. Metals : For metals, the valence band is
possibilities
band is known as energy band gap in a filled and the conduction band can have two energy
Overlapping
conduction band either it is partially filled with an extremely small or it is
conduction bands
Electron
enersy gap between the valence and
overlapping each other as
(E,-0) empty, with the two bands
shown in the figure.
Conductors Conduction Band Conduction Band
E.
Valence
band Valence Band
Valence Band
Empty band
On applying even a small electric field, metals can conduct
conduction
energy
Electron
electricity.
Insulators: For insulators, the energy
E, >3eV Conduction Band
Insulators
gap between the conduction and
valence bands is very large. Also, the
Valence Band
conduction band is completely empty,
 WtG CBSE
Electron
energy ECharnpion P
388

as shown in the figure.

When an electric field is applied across such amount of
asolid,the
Semiconductors E,3ey
electrons find it difficult to acquiresuch alargeconduction
energy toreachthe conduction band. T Thus,the
Current flows
band continues to be empty. That is why no TwoDistinguishingfeatures:
through insulators. band
conductors, the valence
5. () The resistivity of a
conductor increases
and
non-linearly
p(2-m) with increase in temperature.
p(s2-m)
() In
band tend to
insulators they
overlap
are
(or
nearly overlap)
separated by a
large
semiconductors are separated by a
cenoenrduhcilteionin
a

gap.
and in sInall energy
conduction band of a conductor
(i) The
electrons avalable for electrical
has alargg
O 10 K 20 K T(K)
(For low temperature)
300 KT (K)
(For high temperature)
(1) The resistivity of asemiconductor decreases Witn
number of
Howeve, the
conduction band of

empty while that

of the semiconductor has
insulators is conduction
only aalivermoys,
of such electrons available for
increase in temperature. small number
p(2-m)
conduction. electrica
Key Points
The size of the
energy gap between
matconduct
erialsionis
band and valence band for different
different.
300K T(K)

7. (a):Assertion: Correct.
Concept Applied (G
number of e or hole
Reason : correct, the
S With the rise in temperature the conductivity of
a conductor decreases and the conductivity of a in conduction band. They jump from valence band to increase
semiconductor increases. conduction band.
6 Overlapping 8 (a): When a atom is ionised, it t createssafree electron
conduction band
Electron
energ and also it creates a positively ionised donor atom Th
(E,>0) charge on the free electron and the ionised donor s
E
Conductors
E
equal and opposite. So, as long as the electron doesnt 0
anywhere, the net charge remains zero.
Valence
band
9. (b): In n-type semiconductor, the donor energy level
Empty
lies just below the conduction band.
Electron
energy conduction band
10. (b): As the temperature increases the carrier
concentration increases significantly. This is because
E,>3eV
Insulators extra electrons are excited from the valence band to
E, the conduction band, due to which the number of free
electron -hole pairs increases.
11.

daRIna puxeeomaniUn witha tiyalegt

Semiconductor Electronics: Materials, Devices and Sinple Circuits 389

Aiand
diagam
(0 NOVCrI
BAND
rmpURIy
ENeRoyLENÊL H.FoRBIDDEN
ENCRaY BANO GA
HOLES
NALENCE OANO
SEMION DUTOR

Semicooductosis.foo Med
Oaprng-a Loune geoman jum.with a-pentala
iMpuaity
-ENeag and diagam
£LeLTAONS CON DULTION_ GANO.
Et.
TFORBI
DpEN
DoNNR ImeURITY ENeRY GAND GaP.
ENCRY Lev EL
hoLEs

(Topper's Answer, 2022]

enerEY
Eiectron
12. Intrinsic semiconductors have very small conductivity
at room temperature. VWhen certain impurities in
small amount (~ 1 part per million) are added to an 001-005 cV
intrinsic semiconductor, electrical conductivity of doped
semiconductor increases to a great extent and made it
useful in many practical applications. Pentavalent atoms
and trivalent atoms are used for doping Ge/Si.
Pentavalent atoms such as- As and Sb etc (b)
Energy band diagram of
Trivalent atoms such as - Al and Betc p-type semiconductor
at T>0 K
13.
Intrinsic Extrinsic In n-type extrinsic semiconductors, the number of free
Semiconductors Semiconductors electrons in conduction band is much more than the
() These are pure These are semiconducting number of holes in valence band. The donor energy
semiconducting tetravalent crystals doped with
level lies just below the conduction band. In p-type
tetravalent crystals. impurity atoms of group Ill or
group V. extrinsic semiconductor, the number of holes in valence
(i0)Their electrical Their electrical conductivity band is much more than the number of free electrons
conductivity is low. is high. in conduction band. The acceptor energy level lies just
(ii) There is no permitted There is permitted energy state above the valence band.
energy state of the impurity atom between
between valence and valence and conduction bands. 15. (i) The required energy band diagrams are given
conduction bands. below:

14. The required energy band diagrams are given below: energy
Electron
energy
Electron
E
0.01 eV 001-005 eV -
E
0.01 eV E E

(a) (a) (b)

Energy band diagram of Energy band diagram of Energy band diagram of
n-tpe semiconductor n-tpe semiconductor p-type semiconductor
at T>0 K at T>0K at T> 0 K
390
WLtG CBSE
Electron
enery Champion
(i)
flow of current when reverse biased. Physics Class 12
(b) Intrinsic semiconductors have very small

immpurconducitietsivity
at room temperature. When certain
small amount ( 1 part per
intrinsic semiconductor,
million) are added to in
electrical
semiconductor increases to a great extent conductivity of an dopedit
and made
Energy band diagram of useful in many practical applications.
semiconductor
at T= 0K 18. Two processes that take place in the
At absolute zero
temperature (0 K) conduction band of
p-n junction are diffusion and drift.
n
formation of a

semiconductor is completely empty, i.e.,

the = 0.
Hence
semiconductor
behaves as an insulator. At room
temperature, some valence electrons acquire enough +

thermal energy and jump to the conduction band

where they are free to conduct electricity.
semiconductor acquires a small conductivity Thus the
at room
temperature.
Key Points
S In n-type
semiconductors, electrons are majority
carriers and holes are minority carriers.
16. (a) Two processes that take place in the
of a p-n junction are diffusion and drift. formation
When p-n junction is formed, then at the junction free
electrons from n-type diffuse over to p-type, thereby
filling in the holes in p-type. Due tothis a layer of positive
charge is built on n-side and a layer of negative charge is
built on p-side of the p-n junction. This layer sufficiently
grows up within a very short time of the junction being
formed, preventing any further movement of charge
carriers (i.e., electrons and holes) across the junction.
Thus a potentialdifference Vo of the order of 0.1 to 0.3 V
is set up across the p-n junction caled potential barrier
or junction barrier. The thin region around the junction
containing immobile positive and negative charges is
known as depletion layer.
(b) No, because surface of both crystals have some
roughness and contact at atomic level is not possible
when slabs of p-type of n-type semiconductor are
physically joined.
When p-n junction is formed, then at the junction frex
electrons from n-type diffuse ver to p-type, therehy
filling in the holes in p-type. Due to this a layer of positiva
charge is built on n-side and alayer of negative charge is
built on p-side of the p-n junction. This layer
sufficiently
grows up within avery short time of the junction being
formed, preventing any further movement of charge
carriers (i.e., electrons and holes) across the junction.
Thus a potential difference Vo of the order of 0.1 to 0.3 V
is set up across the p-n junction called potential
barrier
or junction barrier. The thin region around the
junction
containing immobile positive and negative charges is
known as depletion layer.
19. (i) As germanium isan intrinsic semiconductor. The
new obtained semiconductor iis extrinsic semiconductor
i.e., n-type and electrons are majority charge carriers.
Electron
energy
Conduction Band
Eg = 0.01 ev Donar level
Eg = 0.72 eV
Valence Band
(ii) Two processes that take place in the formation of a
p-n junction are diffusion and drift.
+
C

17. (a) In forward biasing, the forward voltage opposes
the potential barrier. As a result, potential barrier height is
reduced and the width of depletion region decreases. Small
increase in forvward voltage shows large increase in forward
current. Thus resistance in forward bias is reduced.
In reverse bias, barrier potential height increases. For
large increase in reverse voltage shows small increase in
reverse current. Thus, resistance of p-n junction is high to
When p-n junction is formed, then at the junction e
electrons from n-type diffuse over to p-type, thereby
filling in the holes in p-- type. Due to this alayer of positive
charge is built on n-side and a layer of negative charge is
built on p-side of the p-n junction. This layer sufficiently
being
grows up within a very short time of the junction
charge
formed, preventing any further movement of
juunction.
carriers (i.e., electrons and holes) across the
 25. or iscarriers filling When
chargeelectrons p-n 20. nntential 12)
decreases. +he knowniunction cet
Thus formed,grows built It smaller. biased: (i)(1)
junction set junction Two makes Reverse potential contimmobi
ainingleisSemiconaductor is
up a on in p-n up a
potential up isthe as Dotential
acrosspreventing (i.e., withinp-side built from processes barrier the opposes
Forward across
junction Itdepletion chargesbarrier.
im
barrier. holes are width biased
Electronics:
electrons makes
barrier
of on n-type diffusion and the
difference
:Difa
Sio0iThe"when the
difference the
an-side
of layer. The p-n
electións The p-n any
very p-type. in is thateffective
the : the
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he armultaneoo
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Containing
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slde potential Increasing opposite.
In (c):
fo of it the
electons
fxomthe
Hence MoseholeShan concentrationthere an is i
junctianthe to the is Zero depletion
layer.
0 amel the at
unbiased is anapplied
has difference junction.higher immobile
Side barrier is as
(a)example 0.7 V
the potential an
doping forward 0.5 V
taso diffusion
Heme thensicd potential p-n voltage 100 S2
aod increase
increases. of
laye of holes
and causes
concentration positive
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paates hence
a pside and (0.5
an in as
lay The drift 0
and
the electric
This compareddiode, V)
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width associated is negative
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concentration to and
of p-side than
in
which that there
depletion
reducing increase are charges
charge
on of equal barrier
acts is
the the 391
no is
392 WtG CBSE Champion
Physics Class 12
The layens Of oppogite chasaes deyetoped ehe

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Tegian alled the dedeiongegjðn.
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[Topper's Answer, 2022]

26. Forward biased characteristics:The circuit diagrami portion of the graph), in this situation, the diode
behaves
for studying forward biased characteristics is shown in like a conductor. The forward voltage
beyond which the
the figure. Starting from a low value, forward bias voltage current through the junction starts
increasing rapidly
is increased step by step (measured by voltmeter) and with voltage is called threshold or cut-in voltage. lf line
forward current is noted (by ammeter). Agraph is plotted AB is extended back, it cuts the voltage axis at potential
between voltage and current. The curve so obtained is barrier voltage.
the forward characteristic of the diode. 27. Depletion layer:The small region in the vicinity of
the junction which is depleted of free charge carriers and
8
p n
has only immobile ions is called the depletion layer.
7 B
Barrier potential: Due to accumulation of negative
charges in the p-region and positive charges in the
(mA) Ge
n-region sets up a potential difference across the junction
sets up. This acts as a barrier and is called potential barrier
Vg which opposes the further diffusion of electrons and
A holes across the junction.
Jo (a) In forward biasing the width of depletion layer
00.1 0.2 0.3 0.4 0.5
reduced and the external applied field is able to overcome
Battery Voltage (V) the strong electric field of depletion layer. In reverse
(a) (b) biasing the width of depletion laver increases and tne
electric field of depletion layer become more strongel.
At the start when applied voltage is low, the current (b) As forward voltage opposes the potential barrier aru
through the diode is almost zero. It is because of the efTective barrier potential decreases. It makes the widtn
potential barrier, which opposes the applied voltage. Till of the depletion layer smaller.
the applied voltage exceeds the potential barrier, the
current increases very slowly with increase in applied
Answer Tips(
voltage (OA portion of the graph). With further increase The height of potential barrier in p-n junction diodeis
in applied voltage, the current increases very rapidly (AB proportional to temperature in kelvin.
Semiconductor Electronics: Materials, Devices and Simple 393
Circuits
enormous covalent
28. (b) During breakdown voltage,
charge carriers
bond breaks. As a result large number of
at breakdown
Forward bias increases. Therefore current increases
voltage.
have very small
31. (a) Intrinsic semiconductors When certain
V Reverse
ON voltage conductivity at room temperature.
current -30 uA
-0.65 V for Si
impurities in small amount ( 1 part per million)
~0.2V for Ge
intrinsic semiconductor., electrical
are added to an
conductivity of doped semiconductor increases to a great
Reverse bias
applications.
extent and made it useful in many practical of a
place in the formation
The reverse current is due to minority charge carriers and (b) Two processes that take
even asmall voltage is sufficient to sween the minority p-n junction are diffusion and drift.
carriers from one side of the junction to the other side
of the junction. Here the current is not limited by the
magnitude of the applied voltage but is limited due to the
concentration of the minority carrier on either side of the
junction.
29. () From the given curve, we have free
voltage, V= 0.8 volt for current, | = 20 mA When p-n junction is formed, then at the junction
electrons from n-type diffuse over to p-type, thereby
voltage, V= 0.7 volt for current, I = 15 mA
’ Al= (20- 15)mA =5 x 10 A filling in the holes in p-type. Due to this a layer of positive
AV= (0.8 -0.7) = 0.1 V charge is built on n-side and a layer of negative charge is
built on p-side of the p-n junction. This layer sufficiently
Resistance, R=V grows up within a very short time of the junction being
formed, preventing any further movement of charge
0.1 carriers (i.e., electrons and holes) across the junction.
Thus a potential difference Vo of the order of 0.1 to 0.3 V
R=
Sx10-3
’R= 20 2 is set up across the p-n junction called potential barrier
or junction barrier. The thin region around the junction
(ii) For V=- 10 V, we have containing immobile positive and negative charges is
|=-1uA =-1 x1o-A known as depletion layer.
R=
1x10-6*1.0x10
10 o 32. Two processes that take place in the formation of a
p-n junction are diffusion and drift.
n
-V
30. I-V characteristics of a p-n junction : The
characteristics of a p-n junction do not obey Ohm's law.
The I-V characteristics of a p-n junction are as shown in
the figure. +

I(mA)4 +

100 When p-n junction is formed, then at the junction free

80 electrons from n-type diffuse over to p-type, thereby
60
filling in the holes in p-type. Due to this a layer of positive
Ge Si
charge is built on n-side and a layer of negative charge is
40 built on p-side of the p-n junction. This layer sufficiently
grows up within a very short time of the junction being
Reverse voltage 20
-100 -80-60-40-20 0 formed, preventing any further movement of charge
-0.2 0.4 0.6 0.8 1oVy carriers (.e, electrons and holes) across the junction.
V(V) Forward voltage Thus a potential difference Vo of the order of 0.1 to 0.3 V
is set up across the p-n junction called potential barrier
-3
or junction barrier. The thin region around the junction
containing immobile positive and negative charges is
is due to the known as depletion layer.
(a) The current of order in reverse bias
drifting of minority charge carriers from one region to Depletion layer : The small region in the vicinity of the
junction which is depleted of free charge carriers and has
another through the junction. Asmallamount of applied only immobile ions iscalled the depletion layer.
carriers
Voltage is sufficient tosweep the minority charge
reverse current is almost Barrier potential : Due to accumulation of negative
through the junction. So,
independent of critical voltage. charged ion in the p-region and positive charged ion
 figure.
studying voltage.
Reverse barrier AB with portion
current like voltage in the through At
currentpotential e
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throrward 394
(uA)
isthe for 34. the 33.strong and potential In of the In
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ofincreases start electric n-region
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p step forwardbiased it at biasing and sets
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cutsjunction current this the
slowlyopposes depletion widthacross
This up
characteristics (by a less
graph). of
(measured low bias.
-10 the situation, voltage Current (mA) ammeter). than
field opposes acts a
the characteristics
:
voltage starts
or
voltageincreases with the zero. 7+ 8 The value, ofthe potential as
Breakdown -8-6Voltage(V) The diode. layer. is
voltage cut-in Withpotential the 0.21 0 o the depletion junction.
able a
(b) It Voltage(V) curve forward the
barrier
-4
circuit increasing beyond the increase applied is is Ge The : voltage
axis further
very lo w, (b 0.354 A, Aby to further difference
-2 shownthe in voltage. diode because graph
voltmeter)
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the
voltage. the obtained bias is at and
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Current (uA) rapidly behaves increaseapplied current is shown n is
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line the (AB called
Til the and the
is in of
studying voltage.
Reversebarrier AB with portion
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Secondary input circuit on with
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A () fact -10
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-8 ()
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Full
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an is minority also supports (b) -4
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only reverse supported
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full p-n Circuits
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current wave Twop-n41. ac
of
does reverse increased,
(ii) through Current
carriers. Breakdown increases
p-significantly
n voltage. certain (ii) not
tocircuit.positive.
40. () during secondaryDuring Conducts
flowsnegative. Supply. resistor
transtormer.
secondary It
junction, B, consists
voltages. not Since Threshold so conduct
rectifier
into Reverse
voltage positive from
conduct bias the This value. V(V) -100 d.c. Since Thus,negative During RË
junction for If is very the
direct voltage even is winding Thus, across of
junction
voltage p-n the due when voltage After -80 obtained electric any diode toA winding Primary
current a
which a to
slowly,
voltage half B positive
in junction reverse
certain -60-40 half through diode thediode
current. it for
reversediodes is the :A is this cycle, current.becomesD becomes
diodes thus is called very till I(mA) across currentbecomes cycle half of D
through D secondary
is movement reverse very voltage, : -20
voltage In 20 40 60 80 100 in
used conduct known reverse
wil bias one So, loadbecomestransformer
cycle connected
bias, small small forward VI(uA) -3 -2
of positive
can
threshold -1
0.2 R/. flows negative
no
direction reverse input resistor So,it. of
windings
to it increase voltage biased. increasediodeacross
as
is voltage, through
current flow 0.4 Ge current input
convert be used in of through and a.c., current
forward and is in
used breakdown
forward current bias, R/.
minority
is The voltage. diode Forward
voltage 0.6 biased connected
a.c., series
only end end i’t’ endB of
in abruptly. in current 0.8 flows in a
to continuously the flow load B biased end
alternating rectification 1.0
i.e., and A the with
make bias increases
diode crosses
becomes becomes step-down
A
voltage. current charge of from R in of circuit ofto load
and This the bias first only the does the and the a.c. 395
full a A
396
WtG CBSE
Centre- Tap Thus diode D, becomes forward
Charnplon Physics Clas 12
biased,
Transformer Diode D
D, reverse biased. So diode D, allows the
through it, while diode D, does not, and
whereas to diflovode
current
circuit flows from D, and through load R current in
Xto Y. the
A
Centre Tap During negative half cycle of input a.c., end A from
secondary winding becomes negative and of
Diode D,
SR, Output
thus diode D, becomes reverse end B the
biased, whereas positive,
Y
forward biased. So diode D, does not allow
to flow through it but diode D, does, and the
D, diode
A full wave rectifier consists of two dËodes
parallel across the ends of secondary windingconnected in circuit flows from D, and through load R, currentcurrent
fromnXto inY. the
of a center
tapped step down transformer. The load
IS Connected across secondary resistance Ry
winding and the diodes
between Aand B as shown in the circuit.
During positive half cycle of input a.c., end A of the
secondary winding becomes positive and end Bnegative.
Thus diode D, becomes forward biased, whereas
D, reverse biased. So diode D, allows diode
the current to flow
through it, while diode D, does not, and current in the Input-Output waveforms
circuit flows from D, and through load R, from X
During negative half cycle of input a.c.. end AtoofY. the Since in both the half cycles of input a.c., electric
through load R, flows in the same direction, Current
Secondary winding becomes negative and end Bpositive, obtained across R,. Although direction of
so d.c. is
through R, remains same,, but its magnitudeelectric current
thus diode D, becomes reverse biased, whereas
forward biased. So diode D, does not allow thediode
D2
to flow current
through it but diode D, does, and current the time,so it is called pulsating d.c. changes with
circuit flows from D, and through load R, from Xto Y. (i) If an alternating voltage is applied across a
junctinn
diode. then the current will only in the part where
Vi it ie
forward biased. This property of junction diode can ha
used to rectify.
A

Vout 4 Forward bias

V,
Input-Output waveforms V. ON voltage
Reverse -0.65 V for Si
Since in both the half cycles of input a.c., electric current Current-30 uA -0.2 V for Ge
through load RL flows in the same direction, so d.c. is D
obtained across RL. Although direction of electric current Reverse bias
th
through RL remains same, but its magnitude changes C
with time, so it is called pulsating d.c. (iü) Carbon and silicon both are the elements of the
42. (i) Two p-n junction diodes can be used to make carbon family and have 4 valence electrons in the valance
full wave rectifier which is used to convert alternating shell.
current into direct current. The 4 bonding electrons of C and Si are in the second
Centre- Tap and third orbit. Hence, energy required to take out
Transformer
e : . . . . . ...
an electron from these atoms will be least for silicon
Diode D, and highest for carbon due to this, the number of free
A electrons for conduction will be significant in silicon but
Centre Tap will be negligibly small for carbon. That is why carbon is
B an insulator while silicon is intrinsic semiconductor.
SR, Output
Diode D, 43. Two processes that take place in the formation of a
p-n junction are diffusion and drift.
A full wave rectifier consists of two diodes connected in
parallelacross the ends of secondary winding of a center +
tapped step down transformer. The load resistance R,
is connected across secondary winding and the diodes
betweenA and B as shown in the circuit.
During positive half cycle of input a.c., end A of the
secondary winding becomes positive and end Bnegative. +
 SemiconductorrElectronics: Materials, Devices and Simple Circuits 397

When p-njunction is formed, then at the junction free

electrons from n-type diffuse over to p-type,
thereby 44. Half wave rectifier:
fillinginthe holes in p-type. Dueetto this alayer of
positiveis D
charge is built on n-side and a layer of negative charge X
of the p-n junction. This layer Transformer
built on p-side sufficiently 00000)
Q2000
grows up within a very short time of the junction being
formed, preventing any further movement of Secondary SR, Output
charge Primary
carriers (i.e., electrons and holes) across the junction.
Thus a potential difference Vo of the order of 0.1 to 0.3 V
set up across the p-n junction called potential barrier
bunction barrier. The thin region around the junction with load
It consists of a diode D connected in series
containing immobile positive and negative charges is resistor R, across the secondary windings of a step-down
known as depletion layer.
transformer. Primary of transformer is connected to a.C.
if an alternating voltage is applied across a junction the
diode.then the current willflow only in the part where it supply. During positive half cycle of input a.c., end Aof
end B negative.
is forward biased. This property is used for rectification. secondary winding becomes positive and
conducts the
TWo p-n junction diodes can be used tomake full wave Thus, diode D becomes forward biased and
fromA
rectifier which is used to convert alternating current into current through it. So,current in the circuit flows
direct current. to Bthrough load resistor R/.
Centre- Tap
Iransformer
Diode D1
A
Centre Tap
B BR,Output Out

Diode D2
b
Afull wave rectifier consists of two diodes connected in
parallel across the ends of secondary winding of a center
tapped step down transformer. The load resistance R
is connected across secondary winding and the diodes
betweenA and B as shown in the circuit.
During positive half cycle of input a.c., end A of the
secondary winding becomes positive and end B negative.
Thus diode D, becomes forward biased, whereas diode
D, reverse biased. So diode D, allows the current to flow
through it, while diode D, does not, and current in the
circuit flows from D, and through load R, from Xto Y.
the During negative half cycle of input a.c., end A of the
ce secondary winding becomes negative and end Bpositive,
thus diode D, becomes reverse biased, whereas diode D,
nd forward biased. So diode D, does not allow the current
ut to flow through it but diode D, does, and current in the
on
circuit flows from D, and through load R, from Xto Y.
During negative half cycle of input a.c., end A of the
secondary winding becomes negative and end B positive.
Thus, diode D becomes reverse biased and does not
conduct any current. So, no current flows in the circuit.
Since electric current through load R, flows only during
positive half cycle, in one direction only ie., from Ato B,
so d.c. is obtained across R.
CBSE Sample Questions
1. (c):The electrical conductivity of semiconductor
increases on adding an appropriate amount of suitable
impurity or doping. It can be done with an impurity which
is electron rich or electron deficient. (1)
2. Antimony (Sb) is a pentavalent impurity. So, when
antimony is added to pure Si crystal, a n-type extrinsic
semiconductor would be obtained.
Energy level diagram of n-type semiconductor
energy
Electron

Vout
Er
=0.01 eV

Input-Output waveforms E

Since in both the half cycles of input a.c, electric current

through load RL flows in the same direction, so d.c. is la)
obtained across RL. Although direction of electric current Energy band diagram of
through RL remains same, but its magnitude changes n-type semiconductor
with time,so it is called pulsating d.c. at T> 0K (2)
398 WtG CBSE Champion

3. When antimony is doped with germanium n type Centre- Tap

Physics Class 12
Transformer
semiconductor is formed, The reguired energy band Diode D
diagrams are given below: A
X
Electron
energy Centre Tap
ROutput
Er Diode D2
=0.01 eV E
(1
Afull wave rectifier consists of two diodes
parallel across the ends of secondary windingconnect
of a ed
in
(a) tapped step down transformer. The load centerR,
Energy band diagram of n-type
semiconductor at T>0K
is connected acroSs secondary
between Aand Bas shown in the
winding and the
circuit.
resistancediodes
In n-type extrinsic semiconductors, the number of free
electrons in conductors band is much more than number During positive half cycle of input a.c., end A of tha
of holes in valence band. The donor energy level lies just secondary winding becomes positive and end B
below the conduction band. Here the majority charge Thus diode D, becomes forward biased, whereas diods negative.
D, reverse biased. So diode D, allows the
carriersS are electrons. (2) current to
through while diode D2 does not, and current in flow
it,
4. Given, Al =10 mA, V, = 0.70 V, V,=0.71 V the
circuit flows from Dand through load R, from XtoY
During negative half cycle of input a.c., end A of +he
Dynamic resistance, r,= change in voltage secondary winding becomes negative and end Bpositive
change in current
thus diode D, becomes reverse biased, whereas diode D.
AV (0.71-0.70)V forward biased. So diode D, does not allow the current
=12
A 10x10-3A
(1) to flow through it but diode D, does, and current in the
5. If the doping level is further increased, then even circuit flows from D, and through load R, from Xto Y.
more number of free electrons and holes are generated.
Thiswill create a large electric field at n-side and p-side.
This electric field dominates the opposing electric field
from the ions. This decreases the width of depletion
region. (1) Vout
6. Here, input frequency = 25 Hz t
For a half-wave rectifier, the output frequency is equal to
Input-Output waveforms
the input frequency.
Since in both the half cycles of input a.c., electric current
So,output frequency is also 25 Hz. (1 through load R, flows in the same direction, so d.c. is
7. Two p-n junction diodes can be used to make full obtained across R,. Although direction of electric current
wave rectifier which is used to convert alternating through R, remains same, but its magnitude changes with
current into direct current.
time, so it is called pulsating d.c. (2)