B39SE Semiconductor Electronics

Week 4

PN Junctions
Part-1

Basic Structure
 Outline

• Basic structure
• Zero applied bias
• Reverse applied bias
• Junction breakdown
• Exercises
 Basic structure
P type N type

holes free electrons

(positive charge) (negative charge)
PN junction
• PN junction = P-type semiconductor + N-type semiconductor
• Usually single crystal materials in which one area is doped with acceptor
impurity atoms (P) and the other with donor impurity atoms (N)
• Homojunction: P-type and N-type regions made from the same
semiconductor
• Heterojunction: P-type and N-type regions made from different
semiconductors
 Basic structure
P type N type P type N type

holes free electrons space charge region

(positive charge) (negative charge) or
depletion region
PN junction

• Initially diffusion takes place where

– free electrons go from N to P region
– free holes go from P to N region
– a space charge region is formed
 Basic structure
P type N type

space charge region

or
depletion region

• In the equilibrium
E
– the N and P regions have a neutral charge and an electric field E is induced from
the N to the P region
– the depletion region is formed where no mobile charges (free electrons and
holes) are left
– a potential barrier appears, so now free charges need extra energy to cross the
depletion region
 Zero Applied Bias

P-type N-type
intrinsic semiconductor
EC EC EC
EF
EF
EF
Ev Ev Ev

P-type N-type
EC EC
EF
PN junction
(non equilibrium) EF
Ev Ev

P-type
EC
PN junction N-type
(equilibrium) EC
EF EF
Ev

Ev
 Zero Applied Bias

• Energy band diagram of PN junction with zero bias

p n
EC

eVbi
EFi
efFp
EF EF
efFn
Ev EFi
 Zero Applied Bias

• Built-in potential barrier (Vbi ): difference between the Fermi

levels of the P-type and N-type semiconductors before they
were put together to form the PN junction

Vbi = fFn + fFp

 Zero Applied Bias
electron concentration in N region hole concentration in P region
 E Fn − E Fi   E Fi − E Fp 
   
N d = ni e  kT 
N a = ni e  kT 

intrinsic carrier concentration intrinsic Fermi level

(intrinsic energy level)

efFn = E Fi − E Fn efFp = EFi − EFp

Fermi potential
Fermi potential

− kT  N d  + kT  N a 
fFn = ln  fFp = ln 
e  ni  e  ni 
 Zero Applied Bias

thermal voltage
built-in potential barrier
kT  N a N d   Na Nd 
Vbi = fFn + fFp = ln 2  = Vt ln 2 
e  ni   ni 

K= 1.38e-23 J/K (Boltzmann constant)

T: temperature in Kelvin
q= 1.6e-19 C (electron electrical charge)
 Zero Applied Bias
Example:

Calculate the built-in potential barrier in a PN junction. Consider a silicon (Si) PN junction
at T=300 K with doping concentrations of N a = 2 1017 cm −3 and N d = 1015 cm −3 .

 Na Nd
Vbi = Vt ln 2

 = (0.0259 ) ln 
( ) ( ) = 0.713 V
 2 1017  1015
 ni  (
 1.5 10 10 2
) 
 Zero Applied Bias
Problem 7.2 (Neamen):
Calculate built-in potential barrier for Si, Ge and GaAs PN junctions if the each have
the following dopant concentrations at T=300 K.
(a) −3
N d = 10 cm
14

N a = 1017 cm −3

(b) N d = 5 1016 cm −3
N a = 5 1016 cm −3

(c) N d = 1017 cm −3
N a = 1017 cm −3
 Zero Applied Bias
Problem 7.2 (solution):
N N 
Vbi = Vt ln a 2 d 
Using the formula  ni  where the intrinsic carrier concentration (ni) can be
obtained form the table in slide 6, we obtain the following solution:

(a) intrinsic semiconductor Vbi (V)

−3
N d = 10 cm
14
Silicon 0.635
N a = 1017 cm −3 Germanium 0.253
Gallium arsenide 1.1
(b) intrinsic semiconductor Vbi (V)
N d = 5 1016 cm −3 Silicon 0.778
Germanium 0.396
N a = 5 1016 cm −3
Gallium arsenide 1.25

(c) intrinsic semiconductor Vbi (V)

N d = 1017 cm −3 Silicon 0.814
Germanium 0.432
N a = 1017 cm −3
Gallium arsenide 1.28
 Zero Applied Bias
Electric Field

• Assuming a uniformly doped PN junction and considering and

abrupt junction approximation we have the following charge
density in the depletion region

r (C/cm3) P type -xp x=0 +xn N type

p n
+eNd

+
-xp
+xn space charge region
- or
depletion region
-eNa

E
 Zero Applied Bias
Electric Field • E is continuous in the metallurgical
E junction (x=0)
p n • E is continuous in x=-xp and x=+xn and
equal to 0 in thermal equilibrium
-xp x=0 +xn
• In uniformly doped PN junctions, E is a
linear function of the distance through
the junction with maximum in x=0
• Using Poisson’s equation we can write
d 2f ( x ) − r ( x ) − dE ( x )
= =
dx 2
S dx
f (x ) electric potential
E ( x ) electric field
r (x ) volume charge density
 S permittivity of the semiconductor
 Zero Applied Bias
Electric Field

r (x ) eN − eN a
P region E= dx = −  a dx = x + C1
S S S E

p n
E (x = − x p ) = 0
-xp x=0 +xn
− eN a
E (x = − x p ) = (− x ) + C eN a
1 =0  C1 = − xp
S S
p

− eN a
E= (x + x ) -x p  x  0
S
p
 Zero Applied Bias
Electric Field
E

r (x ) eN eN
N region E= dx =  d dx = d x + C2 p n
S S S
-xp x=0 +xn

E ( x = + xn ) = 0

E ( x = + xn ) = ( xn ) + C 2 = 0
eN d eN d
 C2 = − xn
S S

− eN d
E= ( xn + x ) 0  x  + xn
S
 Zero Applied Bias
E
Electric Field
p n

− eN a
E= (x + x ) -x p  x  0 -xp x=0 +xn
S
p

− eN d
E= ( xn + x ) 0  x  + xn
S
• E is continuous in the metallurgical junction (x=0), so equating the two
expressions above for E at x=0 give us
− eN a
(x + x ) = − eN (xd
− x)
S S
p n

− eN a − eN d
x=0 xp = xn
S S
N a x p = N d xn
• Number of negative charges per unit area in the P region equals the
number of positive charges per unit area in the N region.
 Zero Applied Bias
Depletion region width
W
Vbi = f ( x = xn ) =
e
2 S
(N x
d n
2
+ N x
a p
2
) P type -xp x=0 +xn N type

N d xn
N a x p = N d xn xp =
Na
space charge region
or
We express the depletion region width in terms of Vbi depletion region

1/ 2
 2 SVbi  Na  1 
xn =    
 e  Nd  Na + Nd 
1/ 2 E
 2 SVbi  Nd  1 
xp =    
 e  a  a
N N + N d 

W = xn + x p
1/ 2
 2 SVbi  N a + N d    Na Nd 
W =   where Vbi = Vt ln  and  S =  r  0
 e  a d 
N N
 in 2

 Zero Applied Bias
Example:

Calculate the depletion region width and electric field in a PN junction for zero bias.
Consider a silicon PN junction at T=300K with doping concentrations of Na=1016 cm-3 and
Nd=1015 cm-3.

N N
Vbi = Vt ln a 2 d
 ( ) ( ) = 0.635 V
 1016  1015
 = (0.0259 ) ln 
 ni  ( ) 
 1.5 1010 2

 S =  r  0 ( r _ silicon  11.7 and  0 = 8.85 10 )

−14

 2(11.7 )8.85 10  (0.635) 10 + 10

1/ 2 1/ 2
 2 SVbi  N a + N d   −14 16 15

W =   =  −19  16 15  =
 e  a d 
N N  1 . 6  10  10 10 
= 0.95110 − 4 cm = 0.951m
 Zero Applied Bias
Example (cont.):
1/ 2
 2 SVbi  Na  1 
xn =     = 0.8644 m
 e  Nd  Na + Nd 
1/ 2
 2 SVbi  Nd  1 
xp =     = 0.0864 m
 e  a  a
N N + N d 

The peak electric field can be calculated using one of the expressions for the electric field
at x=0. − eN
E= a
(x + x ) -x p  x  0
S
p

− eN d
E= ( xn + x ) 0  x  + xn
S
x=0

(x ) = − (1.6 10 )(10 )(0.8644 10 ) = −1.34 10

−19 −4
− eN d 15
E= 4

(11.7 )(8.85 10 )

V / cm
S −14
n
 Zero Applied Bias
Example:

Consider the uniformly doped GaAs junction at T=300K. At zero bias, only 20% of the
total space charge region is towards the P region. The built-in potential barrier is
Vbi=1.2V. For zero bias, determine:

(a) Na
(b) Nd
(c) xn
(d) Xp
(e) Emax
 Zero Applied Bias
Example:
N a x p = N d xn
(a) Na
(b) Nd x p = 0.2W = 0.2(x p + xn )
xn = 0.8W = 0.8(x p + xn )
xp0.2W
Nd = Na = Na = 0.25 N a
xn 0.8W

ni ( GaAs ) = 1.8 106 cm −3

 0.25 N a2 
 Na Nd  Vbi = 1.2 = 0.026 ln 
Vbi = Vt ln 2   ( )
 1.8 106 
2

 ni 
N a = 4.14 1016 cm −3
N d = 0.25 N a = 1.04 1016 cm −3
 Zero Applied Bias
Example:

(c) xn 1/ 2
(d) xp  2 SVbi  N a   1 
xn =     = 0.366 m
 e  N d   N a + N d 
x p = 0.25 xn = 0.0916 m

where  S =  r 0 ( r _ GaAs  13.1 and  0 = 8.85 10 −14 )

(e) Emax

(x ) = − (1.6 10 )(1.04 10 )(0.366 10 ) = −5.25 10

−19 16 −4
eN d
E=− 4

(13.1)(8.85 10 )
V / cm
S −14
n
 Reverse Applied Bias
• When a reverse bias voltage is applied to the PN junction
(positive terminal in N region and negative terminal in P
region):
– electrons are attracted towards the positive terminal
– holes are attracted towards the negative terminal
– the depletion region increases
P type W N type P type N type

space charge region space charge region

or or
depletion region depletion region

VR VR
 Reverse Applied Bias
• The Fermi energy level is not constant anymore
p n
EC

eVtotal
EFi
efFp
EFp EF
eVR
Ev EFn
efFn

• The potential barrier increases

Vtotal = Vbi + VR
 Reverse Applied Bias
• The space charge width (W) increases with increasing reverse
biased voltage VR

 2 S (Vbi + VR )  N a + N d  
1/ 2

W =  
 e  a d 
N N

 2 S (Vbi + VR )  N a  
1/ 2
1 
xn =    
 e  d  a
N N + N d 

 2 S (Vbi + VR )  N d  
1/ 2
1 
xp =    
 e  a  a
N N + N d 
 Reverse Applied Bias
Example (example 7.3 Neamen):

Calculate the width of the space charge region in a PN junction when a reverse biased
voltage is applied. Consider a silicon PN junction at T=300 K with doping concentrations
of Na=1016 cm-3 and Nd=1015 cm-3. Assume VR=5V.

 Na Nd
Vbi = Vt ln 2

 = (0.0259 ) ln 
( ) ( ) = 0.635 V
 1016  1015
 ni  (
 1.5 10) 
10 2

 2 (V + VR )  N a + N d   ( )
 2(11.7 ) 8.85 10 −14 (0.635 + 5) 1016 + 1015  
1/ 2 1/ 2

W =  S bi   = −19  16 15   = 2.83m
 e  a d 
N N  1 . 6  10  10 10  

Wzero _ bias = 0.951m Wreverse _ bias _ 5V = 2.83m

Compared with previous example, we can see that the W when we have reverse bias is larger if
compared with the case with zero bias.
 Reverse Applied Bias
Example:

The peak electric field in a reverse biased silicon PN junction is |Emax|=3105 V/cm. the
doping concentrations are Na=41017 cm-3 and Nd=41015 cm-3. Find the magnitude of the
reverse bias voltage.

 Na Nd
Vbi = Vt ln 2

 = (0.0259 ) ln 
( )(
 4 1017  4 1015 ) = 0.766 V
 ni   1.5 10( 10 2
) 

 2e(Vbi + VR )  N a N d
1/ 2

Emax =   = 3 105
 S  Na + Nd 
( ) (
 2 1.6 10 (0.766 + VR )  4 10  4 10 )( ) 
1/ 2
−19 17 15
=   = 3 105
Emax
 (11 . 7 (
) 8 . 85  10 )
−14
 4  1017
+ 4  1015


VR = 73 V
 Reverse Applied Bias
Example (problem 7.16 Neamen):

An abrupt silicon PN junction at T=300K has impurity doping concentrations of Na=51016

cm-3 and Nd=1015 cm-3 . Calculate (a) Vbi, (b) W at VR=0 and VR=5V, and (c)|Emax|at VR=0
and VR=5 V.

(a)  Na Nd
Vbi = Vt ln 2

 = (0.0259 ) ln 
( ) ( ) = 0.676 V
 5 1016  1015
 ni  (
 1.5 10 10 2
) 

(b)
( )
 2(11.7 ) 8.85 10 −14 (0.676 + 0 )  5 1016 + 1015  1/ 2
 = 94.5m
 15  
 2 (V + VR )  N a + N d  
−19
  
1/ 2

16
1 . 6 10  5 10 10 
W =  S bi   =
 a d  ( )
 2(11.7 ) 8.85 10 −14 (0.676 + 5)  5 1016 + 1015  
1/ 2
 e N N
 −19  15  
= 273.7 m
 1.6 10  5 10 10  
16
 Reverse Applied Bias
Example:

(c)

 2e(Vbi + VR )  N a N d
1/ 2

Emax =  
 S  Na + Nd 

( )
 2 1.6 10 −19 (0.676 + 0 )  (5 10 ) (10 )
1/ 2
16 15

   = 1.43 10 4 V/cm
(
 (11.7 ) 8.85 10
−14
)  5 1016 + 1015 
Emax =
( )
 2 1.6 10 −19 (0.676 + 5)  (5 10 ) (10 )
1/ 2
16 15

   = 4.14 10 4 V/cm
(
 (11.7 ) 8.85 10
−14
)  5 1016 + 1015 
 Junction Capacitance
• The variation in the applied reverse bias voltage VR produces variations
in the quantity of positive and negative charges in the N and P region
respectively
• This variation of charges with variations in the applied reverse voltage
creates what is called a depletion capacitance in the junction
dQ'
Cdepletion = C ' =
dVR

dQ' = eN d dxn = eN a dx p

 2 S (Vbi + VR )  N a  
1/ 2
dQ' dxn 1 
C' = = eN d where xn =    
dVR dVR  e  d  a
N N + N d 

1/ 2
 e S N a N d 
C' =   [F/cm2]
 bi
2 (V + V R ) ( N a + N )
d  capacitance per unit area
 Junction Capacitance
Example (example 7.5 Neamen):

Consider a silicon PN junction at T=300K with a P-type doing concentration of Na=1016

cm-3 and Nd=1015 cm-3 . Assume VR=5 V. Calculate the junction capacitance.

 Na Nd
Vbi = Vt ln 2

 = (0.0259 ) ln 
( ) ( ) = 0.635 V
 1016  1015
 ni  
 1 .(5  ) 
1010 2

C' = 
 e S N a N d
1/ 2

=
( ) ( )( )( )
 1.6 10 −19 (11.7 ) 8.85 10 −14 1016 1015 
1/ 2

 
 bi
2 (V + VR ) ( N a + N )
d   2 ( 0 . 635 + (
5) 1016
+ )
1015

C ' = 3.66 10 −9 F / cm 2

If the cross sectional area of the PN junction is A=10-4 cm2, then the total junction
capacitance is

C = C ' A = 3.66 10 −9 F / cm 2 10 −4 cm 2 = 0.366 10 −12 F = 0.366 pF

 Junction Breakdown
• In a reversed bias PN junction, above a certain value of VR the
current through the junction increases significantly and if no
current-limiting circuit is used it may damage the device due to
thermal effects. This is know as the junction breakdown.
• The are to mechanisms that can lead to the junction breakdown in a
PN junction: Zener effect and avalanche effect.

FORWARD
BIAS

VB
VR
ZERO BIAS
REVERSE
BIAS
 Junction Breakdown
Avalanche Effect
• If the reverse bias in a PN junction is high, the electric field in the
metallurgical junction can reach large values
• The carriers in the space charge region acquire enough energy from
this electric field and then create electro-hole pairs through a
collision process
• The newly generate carriers can also be accelerated and create
more additional carriers leading to the avalanche effect
 Junction Breakdown
Zener effect
• In a PN junction that is highly doped the valence and conduction
bands on opposite sides of the junction are close enough during
reverse bias
• Electrons may tunnel directly form the valence band on the P side
to the conduction band on the N side
• This process is also know as tunnelling
 PN Junctions
Part-2

Forward applied bias

 Outline

• Forward applied bias (PN diode)

• Ideal PN junction current
• I-V characteristics of the PN diode
• PN junction equivalent circuit
• Metal-semiconductor junctions
– Schottky diode
• Exercises
 Forward Applied Bias
• When a forward bias voltage is applied to the PN junction
(positive terminal in P region and negative terminal in N
region):
– electrons are repelled by the negative terminal
– holes are repelled by the positive terminal
– the depletion region decreases

P type W N type P type N type

space charge region space charge region

or or
depletion region depletion region

Va Va
 Forward Applied Bias
• The Fermi energy level is not constant anymore

p n
EC
e(Vbi-Va)
EFi EFn
eVa
EFp
Ev

• The potential barrier decreases

Vtotal = Vbi − VR
 Forward Applied Bias
• The electric field in the depletion region decreases with increasing
forward biased voltage VR.
• The smaller the electric field means that electrons and holes can diffuse
easier between the p and n regions. This flow of charge creates a current
through the PN junction.
• The expression for the built-in potential barrier is given by

 Na Nd 
Vbi = Vt ln 2 
 ni 
• After some calculations we can write the following expression that relates
the concentration of minority carrier electrons in the P side to the
majority carrier electron concentration on the N side

 − eVbi 
n p0 = nn 0 exp 
 kT 
 Forward Applied Bias
• When applying forward bias we know the potential barrier is reduced to
Vtotal = Vbi − VR
• Substituting this expression we have

 − e(Vbi − Va )   − eVbi   + eVa 

n p = nn 0 exp  = nn 0 exp  exp 
 kT   kT   kT 
• The deviation of the minority carrier electron concentration from thermal
equilibrium when applying forward biasing can be written as
 + eVa 
n p = n p 0 exp 
 kT 
• In the same manner we can write the expression for the majority carrier
holes concentration in the p region when applying forward bias

 + eVa 
pn = pn 0 exp 
 kT 
 Forward Applied Bias
• Example: Calculate the minority carrier concentrations at the edge of the
space charge regions in a forward biased PN junction. Consider a silicon PN
junction at T=300K. Assume the doping concentrations in the N region is
Nd=1016cm-3 and the doping concentrations in the P region is N a=6·1015cm-3
and assume that a forward bias of 0.6 V is applied to the PN junction.

 + eVa   + eVa 
n p = n p 0 exp  pn = pn 0 exp 
 kT   kT 

Thermal-equilibrium minority carrier concentrations are:

n p0 =
n2
i
=
(
1.5 1010 2
) = 3.75 10 4 cm −3
Na 6 1015

pn 0 =
ni2
=
(
1.5 1010 ) 2

= 2.25 10 4 cm −3
Nd 1016
 Forward Applied Bias
• Example (cont.)

Forward bias minority carrier concentrations are:

 0.6  −3
n p = 3.75 10 4 exp  = 4.31 10 cm
14

 0.0259 
 0. 6  −3
pn = 2.25 10 4 exp  = 2.59 10 cm
14

 0.0259 
 Ideal PN junction Current
• Total current in the junction is the sum of the individual electron and hole
currents that are constant through the depletion region. As the electron
and holes currents are constant along the depletion region one can
calculate the total current as the sum of the current of the minority
carrier hole diffusion current at x=xn plus the minority carrier electron
diffusion current at x=-xp.

J = J p ( xn ) + J n (− x p )
 Ideal PN junction Current
• Minority carrier electron diffusion current density at x=-xp

eDn n p 0   eVa  
J n (− x p ) =  exp  − 1
Ln   kT  

•The electron current density for this forward bias condition is also in the +x
direction.

• The total current density in the PN junction can then be written as:
 eD p pn 0 eDn n p 0    eVa  
J = J p (xn ) + J n (− x p ) =  +  exp  − 1
 L p Ln    kT  
  eV  
J = J S exp a  − 1 ideal diode equation
  kT  
 Ideal PN junction Current

  eV  
J = J S exp a  − 1 ideal diode equation
  kT  

where JS is known as the reverse saturation current density

J
J
+ P N -
Va
J
+ -
Va

JS Va
 Ideal PN junction Current
Summary of notation used:

Dn : electron diffusion coefficien t

D p : hole diffusion coefficien t
Ln : electron diffusion length
L p : hole diffusion length
nn 0 : equilibriu m electron concentrat ion in the N - type region
n p 0 : equilibriu m electron concentrat ion in the P - type region
nn : electron concentrar ion in the N - type region
n p : electron concentrar ion in the P - type region
p n 0 , p p 0 , pn , p p : correspond ance to the above
 n : electron lifetime
 p : hole lifetime
 Ideal PN junction Current
• Example: Calculate the ideal reverse-saturation current
density in a silicon PN junction at T=300 K. Consider the
following parameters in a silicon PN junction:
Na=Nd=1016cm-3
Dn=25cm2/s
Dp=10cm2/s
ni=1.5·1010cm-3
p0= n0=5·10-7s
r=11.7
 Ideal PN junction Current
Example (cont.)

 eD p pn 0 eDn n p 0 
JS =  + 
 L p L n 

L p = D p p 0
Ln = Dn n 0

 Dp Dn   1 Dp 1 Dn 
J S = eni  +  = eni  + =
2 2

 L p N d Ln N a   N d  p0 N a  n 0 
 1 25 1 10 
= (1.6 10 −19
)(1.5 10 )  16
10 2
+  = 4.16 10 −11 A/cm 2

 10 5 10 −7 1016 5 10 −7 
 Ideal PN junction Current

  eV  
J = J S exp a  − 1 ideal diode equation
  kT  

For large values of Va, the equation above can be approximated by a straight line (the
term with (-1) becomes negligible).
 I-V Characteristic of the PN diode
•The actual I-V relationship in a PN diode deviates from the ideal
expression. Additional currents are generated from the recombination
processes.
• If considering forward-biasing the total forward bias current density in
the PN junction is the sum of the recombination and the ideal diffusion
current densities.

J = J rec + J D
 eV 
J D = J S exp a 
 kT 
eWni  eV   eV 
J rec = exp a  = J r 0 exp a 
2 0  2kT   2kT 

Where the term (-1) has been neglected in the JD expression.

 I-V Characteristic of the PN diode
ln (J)
ideal diffusion current JD
total current (slope=1)

ln(JR0)
recombination current
Jrec (slope=1/2)

ln(JS)

eVa/kT
• The I-V relationship in the diode can be written as

  eV  
I = I S exp a  − 1
  nkT  

Where the paremeter n is the ideality factor.

n 1 diffusion dominates (large forward-bias voltage)

n2 recombination dominates (low forward-bias voltage)

1 n  2 transition region
 Small Signal Model
• For several applications of PN junctions, such as in amplifiers, sinusoidal
signals are superimposed on the DC currents and voltages.
• The ideal I-V characteristic of the PN junction leads to the following
relationship between I and V.

  eV  
I D = I S exp a  − 1
  kT  

ID: diode current

IS: reverse saturation current
 Equivalent Circuit
• Considering the admittance equation Y = g d + jCd the
small signal equivalent circuit of a forward biased PN junction
is shown below. Apart from the diffusion resistance and
capacitance we need to add the junction capacitance and a
series resistance that represents the finite resistance of the
neutral N and P regions
rd
rs

rd ID
Cd

Cd Cj

Va
Vapp
 Equivalent Circuit
Vapp = Va + I  rS

Va voltage across the junction

Vapp total voltage applied to the PN junction

ln(I)
effect of rS

ideal

Vapp
 Metal-semiconductor junctions
(Schottky diode)
• Schottky diode: metal–semiconductor rectifying
contact
• Instead of two semiconductors of N and P types, the
junction is formed by a semiconductor and a metal
• Usually rectifying contacts are made using N-type
semiconductors
 Metal-semiconductor junctions
(Schottky diode)
fB 0 is the ideal barrier height of the semiconductor contact (also
known as the Schottky barrier) and indicates the potential
barrier seen by electrons in the metal trying to move into the
semiconductor
fB 0 = (fm −  )

Vbi is the built-in potential barrier that is the barrier seen by the
electrons in the conduction band trying to move into the
metal

Vbi = (fB 0 − fn )
 Metal-semiconductor junctions
(Schottky diode)
• Reverse bias: applying a voltage with the
positive side on the semiconductor, the
semiconductor to metal barrier height
increases, while fB 0 remains constant.
• Forward bias: applying a voltage with the
positive side on the metal, the semiconductor
to metal barrier Vbi is reduced while fB 0
remains constant. Electrons can move more
easily from the semiconductor to the metal.
 Metal-semiconductor junctions
(Schottky diode)
Example: Determine the theoretical barrier height, built-in
potential barrier, and maximum electric field in a metal-
semiconductor diode for zero applied bias. Consider a contact
between tungsten and N-type silicon doped to Nd=1016 cm-3 at
T=300K.

The work function for tungsten (W) is fm = 4.55V and the

electron affinity for silicon is  = 4.01V
 Metal-semiconductor junctions
(Schottky diode)
Example (cont.)

fB 0 = (fm −  ) = 4.55 − 4.01 = 0.54V

kT  N c   2.8 1019 
fn = ln  = 0.0259 ln 16
 = 0.206V
e  Nd   10 

Vbi = (fB 0 − fn ) = 0.54 − 0.206 = 0.334V

 Metal-semiconductor junctions
(Schottky diode)
Example (cont.)
1/ 2
 2 SVbi  −4
W = xn =   = 0 . 208  10 cm
 eN d 
eN d xn
Emax = E ( x = 0) = = 3.21 10 4 V / cm
S