AOT460

N-Channel Enhancement Mode Field Effect Transistor

General Description Features

The AOT460/L uses advanced trench technology and VDS (V) = 60V
design to provide excellent RDS(ON) with low gate ID = 85 A (VGS = 10V)
charge. This device is suitable for use in UPS, high RDS(ON) < 7.5mΩ (VGS = 10V)
current switching applications.
AOT460and AOT460L are electrically identical.
100% UIS Tested!
-RoHS Compliant
-Halogen Free

TO220
Top View Bottom View D
D

G
S G
S
D D
G S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C 85
CurrentG TC=100°C ID 66 A
C
Pulsed Drain Current IDM 340
C
Avalanche Current IAR 80 A
Repetitive avalanche energy L=0.1mH C EAR 320 mJ
TC=25°C 268
B
PD W
Power Dissipation TC=100°C 134
Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A Steady-State RθJA 45 60 °C/W
Maximum Junction-to-Case B Steady-State RθJC 0.45 0.56 °C/W

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AOT460

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250uA, VGS=0V 60 V
VDS=60V, VGS=0V 10
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 50
IGSS Gate-Body leakage current VDS=0V, VGS=±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 2 2.95 4 V
ID(ON) On state drain current VGS=10V, VDS=5V 340 A
VGS=10V, ID=30A 6.3 7.5
RDS(ON) Static Drain-Source On-Resistance mΩ
TJ=125°C 10.5 13
gFSForward Transconductance VDS=5V, ID=30A 90 S
VSD Diode Forward Voltage IS=1A, VGS=0V 0.7 1 V
G
IS Maximum Body-Diode Continuous Current 85 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 3800 4560 pF
Coss Output Capacitance VGS=0V, VDS=30V, f=1MHz 430 pF
Crss Reverse Transfer Capacitance 190 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1.5 2.3 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 68 88 nC
Qg(4.5V) Total Gate Charge 33 nC
VGS=10V, VDS=30V, ID=30A
Qgs Gate Source Charge 15 nC
Qgd Gate Drain Charge 19 nC
tD(on) Turn-On DelayTime 18 ns
tr Turn-On Rise Time VGS=10V, VDS=30V, RL=1Ω, 35 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 44 ns
tf Turn-Off Fall Time 23 ns
trr Body Diode Reverse Recovery Time IF=30A, dI/dt=100A/µs 53 64 ns
Qrr Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/µs 98 nC
A: The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
Rev1: Jan. 2009

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AOT460

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

250 100
VDS=5V
10V
200 8V 80

150 60
5V
ID (A)

ID(A)
100 40 125°C

4.5V 25°C
50 20
VGS=4V
-
0 0
0 1 2 3 4 5 2 2.5 3 3.5 4 4.5 5 5.5
VDS (Volts) VGS(Volts)
Figure 1: On-Region Characteristics Figure 2: Transfer Characteristics

7.2 2.2

2
Normalized On-Resistance

7
1.8
6.8
Ω)

VGS=10V 1.6 VGS=10V, 30A

RDS(ON) (mΩ

6.6 1.4

1.2
6.4
1
6.2
0.8

6 0.6
0 20 40 60 80 100 -50 -25 0 25 50 75 100 125 150 175
ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction Temperature
Gate Voltage

25 100
ID=30A
20 10

1 125°C
Ω)
RDS(ON) (mΩ

15
IS (A)

125° 0.1
10

25°C 0.01 25°

5

-40°C 0.001 -40°C

0
4 8 12 16 20 0.0001
VGS (Volts) 0.0 0.2 0.4 0.6 0.8 1.0 1.2
Figure 5: On-Resistance vs. Gate-Source Voltage VSD (Volts)
Figure 6: Body-Diode Characteristics

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AOT460

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 6
VDS=30V
ID=30A
8 Ciss

Capacitance (nF)
4
VGS (Volts)

4
2

2 Crss
Coss

0 0
0 20 40 60 80 0 15 30 45 60
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000 10000

100 10µs
Power (W)
ID (A)

500µs 1000
RDS(ON)
limited 1ms
10
5ms
DC
TJ(Max)=175°C
=175 C
TC=25°C
1 100
1 10 100 0.0001 0.001 0.01 0.1 1 10
VDS (V) Pulse Width (s)
Figure 9: Maximun Forward Biased Safe Operating Figure 10: Single Pulse Power Rating Junction-to-
Area (Note F) Case (Note F)

10
D=Ton/T In descending order
Zθ JC Normalized Transient

TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

RθJC=0.45°C/W
1

0.1
PD

Single Pulse Ton

T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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AOT460

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

300 100

250 80
Power Dissipation (W)

Current rating ID(A)

200
60

150
40
100

20
50

0 0
0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
TCASE (°C) TCASE (°C)
Figure 13: Power De-rating (Note B) Figure 12: Current De-rating (Note B)

150
TA=25°C
ID(A), Peak Avalanche Current

125

100

75
TA=150°C

50

25

0
0.000001 0.00001 0.0001 0.001
Time in avalanche, tA (s)
Figure 10: Single Pulse Avalanche capability

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AOT460

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on t off

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds EAR= 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

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