Field-Effect Transistors

Name: Wei-Chen, Au ID:103202504

Date: December 1,8
Purpose:
1) To understand the basics of field-effect transistors both in their linear and
saturated regimes.
2) To study the frequency response of a Common Source Field Effect Transistor and to
find the Bandwidth from the Response.
Equipment:
 Two DC power source (0-30V)
 Function generator (0-1MHz)
 Resistor (1 kΩ, 2.2 MΩ, 4.7 kΩ, 470 Ω)
 Capacitor (2x 47 uF, 1x 0.001 uF)
 JFETs (2N5457)
 D.C Ammeter (0 – 20mA)
 D.C Voltmeters (0 – 2V), (0 – 20V)
Procedure
1. Drain Characteristics

Figure 4-1. JFET Drain Characteristics

a) Connect the circuit as in the Fig. 4-1 and start with 𝑉𝐺𝐺 (0-30V DC supply) and
𝑉𝐷𝐷 (0-30V DC supply) keeping at zero volts.
b) Control 𝑉𝐺𝐺 such that 𝑉𝐺𝑆 (0-2V DC voltmeter) = 0 volts. Now vary 𝑉𝐷𝐷 such
that 𝑉𝐷𝑆 (0-20V DC voltmeter) varies in steps of 1 volt up to 10 volts. And note down
the corresponding drain
current 𝐼𝐷 (0-200mA DC Ammeter).
c) Repeat the above experiment with 𝑉𝐺𝑆 = -1V and -2V and tabulate the readings.
d) Draw a graph 𝑉𝐷𝑆 vs. 𝐼𝐷 against 𝑉𝐺𝑆 as parameter on graph like figure 4-2.
e) From the graph obtained in the above procedures, calculate the drain resistance
𝑟𝑑 =Δ𝑉𝐷𝑆/Δ𝐼𝐷|𝑉𝐺 .
Result
The experiment result fit the theoretical prediction well. The ID decreases while VGs
decrease. And according to the datasheet of the JFET, when the VGs is -1.5V, the
current decrease to 0.

Figure 1. The purple line is the VGs is 0V, the green line is the VGs is -0.5V, and the
blue line is the VGs is -1V.
Furthermore, the drain resistance is estimated to be 1000Ωwhen the VGs is 0V, and
400Ω when the VGs is -0.5V, 100Ω when the VGs is -1V. The higher the Vgs are, the
lower the drain resistance.
2. Transfer characteristics
a) Set 𝑉𝐺𝐺 and 𝑉𝐷𝐷 at zero volts and keep 𝑉𝐷𝑆 = 1 volt.
b) Vary 𝑉𝐺𝐺 such that 𝑉𝐺𝑆 varies in steps of 0.5 volts. Note down the corresponding
Drain current
𝐼𝐷, until 𝐼𝐷 = 0 mA and tabulate the readings.
c) Repeat the above experiment for 𝑉𝐷𝑆 = 3.0 volts and 5.0 volts and tabulate the
readings.
d) Draw graph between 𝑉𝐺𝑆 Vs 𝐼𝐷 with 𝑉𝐷𝑆 as parameter.
e) From the graph, find the transconductance 𝑔𝑚 =Δ𝐼𝐷/Δ𝑉𝐺𝑆|𝑉𝐷 .
f) Now the amplification factor 𝜇 = 𝑔𝑚 × 𝑟𝑑.
Figure 4-2. FET Drain Characteristics and Common Source Transfer Characteristics
Result
The result fits the theoretical prediction. The larger the VDS , the higher the ID are.

Figure 2. The purple line is the VDs is 1V, the green line is the VDS is 3V, and the blue
line is the VDS is 5V.
Furthermore, the transconductance 𝑔𝑚 is 1.65x10-3 when VDs is 1V, the
transconductance 𝑔𝑚 is 3.06x10-3 when VDs is 3V, and 𝑔𝑚 is 3.51x10-3when VDs is
5V. In addition, the amplification factor is 3.51 when the VGs is 0V and VDs is 5V.
3. JFET amplifier (Common source)
Figure 4-3. Common source JFET amplifier
1) Connect the circuit as in the fig. 4-3. Here 𝑉𝐷𝐷 = +15𝑉, 𝑅 = 1𝑘Ω, 𝑅𝐺 = 2.2𝑀Ω, 𝑅𝑆
=4.7𝑘Ω,𝐷 = 4.7𝑘Ω, 𝐶𝐺 = 0.001𝜇F, 𝐶𝑆 = 47𝜇F, 𝐶𝐷 = 47𝜇F.
2) The input voltage 𝑉𝑆
is AC signal with 𝑉𝑝𝑝=100mV whose frequency varies from 50 Hz to 1MHz in
appropriate steps and note down the corresponding source voltage 𝑉𝑠 and the
output voltage 𝑉𝑂 in a tabular form.
3) Plot the frequency (𝑓) vs Gain (𝐴𝑣) as in fig. 4-4 and determine the Bandwidth
from the graph.

Figure 4-4. Model graph of the gain vs the frequency of a JFET amplifier.
Result
The result fits the theoretical prediction. The bandwidth of the JFET amplifier is
approximately 300kHz. In this experiment, Vp-p is 1.08V, and the maximum voltage of
Vo is 4.4V.
Figure 3. The purple line is the frequency response curve of JFET in log sale, the
green line is the Av=0.707Avmax. The bandwidth of the JFET amplifier is
approximately 300kHz.
Question
1. Why the VGS(off) varies a lot even in the same type of JFET?
2. What is the relation between amplification factor and gain?
Conclusion
The result of these experiments fit well with the theoretical prediction in this
datasheet http://physics.gac.edu/~huber/classes/phy270/SpecSheets/2N5457.pdf
However, the VGS(off) varies a lot even in the same JFET, I am curious about the
circuit design which include this component since people may not sure the VGS(off)
are, how do they design the circuit to ensure the component on the circuit doesn’t
burn out due to large current?