HCMC UNIVERSITY OF FINAL EXAMINATION

TECHNOLOGY AND EDUCATION

SEMESTER 1 – ACADEMIC YEAR 2020-2021
Faculty for High Quality Training
Course name: Basic Electronics
Program name: Electrical and Electronic
Course ID: BAEL340662
Engineering
Exam code: 41 Number of pages: 8
Signature of Proctor 1 Signature of Proctor 2
Duration: 90 minutes.
Open-book.
Student writes answers directly in space reserved
Marks / Signature in exam paper and submit back all exam papers.

Signature of Marker 1 Signature of Marker 2

Student name:..........................................................
Student ID:...............................................................

Exam room: ...................................................................

ANSWER SHEET
Guidelines
Select: X De-select: X Re-select:

No. A B C D No. A B C D
1 16
2 17
3 18
4 19
5 20
6 21
7 22
8 23
9 24
10 25
11 26
12 27
13 28
14 29
15 30

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 SECTION 1. MULTICHOICES (3 Marks)
Directions: Choose the one word or phrase marked (A), (B), (C) or (D) that best completes the
sentence and fill in the “Answer Sheet”.
Question 1: The characteristic of an ideal diode is those of a switch that can conduct current
A. in both directions B. in one direction only
C. in both directions but in only one D. depends on the circuit it is used in
direction at a time
Question 2: To make a P-type of semiconductor material you need a doping material that is:
A. pentavalent B. trivalent
C. tetravalent D. hexavalent
Question 3: The DC or the static resistance of the diode is given by the expression:
A. RD = VD/ID B. RD= (VD1 - VD2)/(ID1 - ID2)
C. RD= ΔVo/ΔIo D. all of the above can be used
Question 4: If one silicon diode and one germanium diode are connected in series, the voltage
drop across the combination of the two diodes will be equal to:
A. the forward drop equal to that of B. the forward drop equal to that of
the silicon diode the germanium diode
C. the forward drop equal to that of D. the forward drop equal to that of
the difference of the voltage drops the sum of the voltage drops across
across the two diodes the two diodes
Question 5: Given a series silicon diode circuit with the resistor R = 2K ohms and an applied
voltage of 10 Volts, what is IQ?
A. 4.65 mA B. 1.0 mA
C. 5 mA D. 0.5 mA
Question 6: The value of the voltage dropped across two diodes one silicon and one
germanium, connected in their forward-biased direction in parallel with each other and in series
with a 12 Volt source and a 1 Kohm resistor is:
A. 11.3 V B. 10.6 V
C. 0.7 V D. 0.3 V
Question 7: A half-wave rectifier (using Silicon Diode) is connected to an AC source with a
voltage of 20 Vmax. The DC output voltage is:
A. 19.3 Vdc B. 13.65 Vdc
C. 6.14 Vdc D. 12.29 Vdc
Question 8: Which of the following circuits is used to eliminate a portion of a signal?
A. a clipper B. a clamper
C. a voltage multiplier D. a voltage divider
Question 9: When the Zener regulator is used to stabilize the output voltage given a fixed input
voltage and a variable load resistance, a too small load resistor will result in:
A. VL is greater than Vz B. VL is equal to Vz
C. VL is less than Vz D. None of the above

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Question 10: Given that a 1000 Hz signal is applied to a clamper with a resistor R of 10,000
ohms. What is the minimum value of capacitor needed to maintain safe clamping action?
A. 0.25 pF B. 10 pF
C. 5 pF D. 250 pF
Question 11: For basic operation of a transistor the base-emitter junction is ………. biased
A. forward B. reverse
C. not D. semi
Question 12: In the cut-off region the base-emitter junction and the base-collector junctions of
the transistor are:
A. both forward biased B. both reversed biased
C. base-emitter junction is forward D. base-emitter junction is reversed
biased while the base-collector biased while the base-collector
junction is reversed biased junction is forward biased
Question 13: When a BJT is operating in the saturation region the voltage drop from the
collector to the emitter VCE is approximately equal to:
A. collector supply voltage B. equal to the emitter voltage
C. almost equal to zero (about 0.3 D. collector current times the
Volts) collector resistor
Question 14: Why is the arrow on the BJT schematic symbol important?
A. It identifies the emitter terminal B. It identifies the collector terminal
and the type of BJT. and the type of BJT.
C. It identifies the base terminal and D. It identifies the direction of the
the type of BJT. emitter current.
Question 15: Which transistor amplifier configuration is the most commonly used?
A. common-emitter. B. common-collector.
C. common-base. D. none of them.
Question 16: The fixed bias circuit uses a silicon transistor, a 12.5 K-ohms base bias resistor
and a 2 K-ohms collector resistor. The supply voltage Vcc is 12 Volts. Calculate the maximum
collector current:
A. 0.904 mA. B. 0.96 mA.
C. 0.056 mA. D. 6.0 mA.
Question 17: The only difference between the resulting equations for a network in which an
NPN transistor has been replaced by a PNP transistor is:
A. the size of the resistors. B. the value of beta.
C. the sign associates with the D. all of the above.
particular quantities.
Question 18: A/An … is added to the fixed-bias configuration to improve bias stability.
A. base voltage. B. emitter resistor.
C. emitter resistor. D. all of the above.
Question 19: When designing for best bias stability the … configuration should be chosen.

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 A. voltage-divider bias. B. collector-feedback bias.
C. fixed-bias. D. emitter-feedback bias.
Question 20: Schokley's equation defines the … of the FET and are unaffected by the network
in which the device is employed.
A. VGS characteristics. B. drain characteristics.
C. input output characteristics. D. transfer characteristics.
Question 21: For an N-channel JFET IDSS= 8 mA and Vp = -6 Volts. If VGS= -2 Volts then
what is the value of the drain current ID?.
A. 2.666 mA. B. 3.5 μA.
C. 3.55 mA. D. 5.33 mA.
Question 22: The depletion type of MOSFET can operate in the:
A. depletion mode. B. enhancement mode.
C. all of the above. D. none of the above.
Question 23: For VGS < VTH in an enhancement MOSFET the drain current will be:
A. 10.0 μA. B. zero μA.
C. 1.0 μA. D. -1.0 μA.
Question 24: The primary difference between BJT and FET types of transistors is:
A. BJTs are voltage controlled and B. BJTs are current controlled and
FETs are current controlled. FETs are voltage controlled.
C. BJTs amplify better than FETs. D. none of the above.
Question 25: The D-MOSFET has specifications and many characteristics that are similar to:
A. the PNP BJT. B. the NPN BJT.
C. the JFET. D. none of the above.
Question 26: A characteristic of voltage divider-bias in FET circuits is:
A. the current in R1 and R2 is the same. B. the voltage drop across R2 is VGS.
C. the gate current is zero. D. all of the above.
Question 27: To calculate the output impedance the applied signal must be set:
A. equal to the smallest value of the input. B. equal to the largest value of the input.
C. equal to zero. D. none of the above.
Question 28: The 're' transistor model replaces the base-emitter junction by:
A. a constant voltage. B. an open circuit.
C. a diode. D. the AC resistance of the forward-
biased diode at the operating point.
Question 29: The … amplifier has low input impedance, high output impedance, and high
voltage gain.
A. common-gate. B. common-drain.
C. common-source. D. none of the above.
Question 30: The capacitor(s) in a BJT amplifier that have their break points in the low
frequency region are:
A. the coupling capacitor CC. B. the emitter by-pass capacitor CE.
C. the source capacitor CS. D. all of the above.
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 SECTION 2. (7 Marks)
Question 31: (6 marks)
For the cascade amplifier of the following Fig.
a. Determine the transconductance factor gm of the given FET.
b. Determine re of the given BJT.
c. Sketch the equivalent circuit.
d. Calculate input impedance and output impedance.
e. Calculate voltage gain and resulting output voltage.
f. Draw ACLL & DCLL of BJT, and determine the corresponding Max Swing.
g. Find the cutoff low-frequency of the given circuit.

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Question 32: (1 mark)
Given the circuit shown in the following
Figure.
a. Derive the expression of Vo1.
b. If V1 = 2sinwt (V) and V2 = 1V, sketch
V1, Vo1 and Vo in the same coordinate
axis.

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