BUZ905DP

MAGNA BUZ906DP
TEC
MECHANICAL DATA
Dimensions in mm P–CHANNEL
20.0 5.0
POWER MOSFET
3.3 Dia.

POWER MOSFETS FOR

AUDIO APPLICATIONS

FEATURES
1 2 3 • HIGH SPEED SWITCHING
2.0 1.0 • P–CHANNEL POWER MOSFET
2.0
3.4
• SEMEFAB DESIGNED AND DIFFUSED
• HIGH VOLTAGE (160V & 200V)
• HIGH ENERGY RATING
1.2 0.6
• ENHANCEMENT MODE
2.8
5.45 5.45 • INTEGRAL PROTECTION DIODE
TO–3PBL • N–CHANNEL ALSO AVAILABLE AS
BUZ900DP & BUZ901DP
Pin 1 – Gate Pin 2 – Source Pin 3 – Drain
Case is Source • DOUBLE DIE PACKAGE FOR MAXIMUM
POWER AND HEATSINK SPACE

ABSOLUTE MAXIMUM RATINGS

(Tcase = 25°C unless otherwise stated) BUZ905DP BUZ906DP
VDSX Drain – Source Voltage -160V -200V
VGSS Gate – Source Voltage ±14V
ID Continuous Drain Current -16A
ID(PK) Body Drain Diode -16A
PD Total Power Dissipation @ Tcase = 25°C 250W
Tstg Storage Temperature Range –55 to 150°C
Tj Maximum Operating Junction Temperature 150°C
RθJC Thermal Resistance Junction – Case 0.5°C/W

Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. Prelim. 2/95
 BUZ905DP
MAGNA BUZ906DP
TEC
STATIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Characteristic Test Conditions Min. Typ. Max. Unit
VGS = 10V BUZ905DP -160
BVDSX Drain – Source Breakdown Voltage V
ID = -10mA BUZ906DP -200
BVGSS Gate – Source Breakdown Voltage VDS = 0 IG = ±100µA ±14 V
VGS(OFF) Gate – Source Cut–Off Voltage VDS = -10V ID = -100mA -0.1 -1.5 V
VDS(SAT)* Drain – Source Saturation Voltage VGD = 0 ID = -16A -12 V
VDS = -160V
-10
BUZ905DP
IDSX Drain – Source Cut–Off Current VGS = 10V mA
VDS = -200V
-10
BUZ906DP
yfs* Forward Transfer Admittance VDS = -10V ID = -3A 1.4 4 S

DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)

Characteristic Test Conditions Min. Typ. Max. Unit
Ciss Input Capacitance 1900
VDS = 10V
Coss Output Capacitance 900 pF
f = 1MHz
Crss Reverse Transfer Capacitance 60
ton Turn–on Time VDS = 20V 150
ns
toff Turn-off Time ID = 7A 110

* Pulse Test: Pulse Width = 300µs , Duty Cycle ≤ 2%.

Derating Chart
300

250
CH AN NE L D ISS IP ATION (W )

200

150

100

50

0
0 25 50 75 100 125 150
TC — CASE TEMPERATURE (˚C)

Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. Prelim. 2/95
 BUZ905DP
MAGNA BUZ906DP
TEC
Typical Output Characteristics Typical Output Characteristics
-22 -22

-20 -20
TC = 25˚C TC = 75˚C
-18 -18
-7V

-16 -16
I D — D R AIN C U RR EN T (A)

I D — D R AIN C U RR EN T (A)
-6V
-7V
-14 -14
-6V

-12 -5V -12

-5V
PC

PC
-10 H = -10 H =
-4V 25 25
0W 0W
-4V
-8 -8

-3V
-6 -6 -3V

-4 -2V
-4
-2V
-2 -2
-1V -1V

0 0
0 -10 -20 -30 -40 -50 -60 -70 0 -10 -20 -30 -40 -50 -60 -70
V DS — DRAIN – SOURCE VOLTAGE (V) V DS — DRAIN – SOURCE VOLTAGE (V)

Forward Bias Safe Operating Area Transconductance

-100 100

V DS = 20V
TC = 25˚C
G FS — TR AN SC ON DU C TAN CE (S)
I D — D R AIN C U RR EN T (A)

-10 10
DC
OP TC = 25˚C
ER
AT
IO
N TC = 75˚C

-1 1
BUZ905D BUZ906D
-160V

-200V

-0.1 0.1
-1 -10 -100 -1000 0 2 4 6 8 10 12 14 16
V DS — DRAIN – SOURCE VOLTAGE (V) I D — DRAIN CURRENT (A)

Drain – Source Voltage

vs
Gate – Source Voltage Typical Transfer Characteristics
-16 -22

TC = 25˚C -20 V DS = -10V

-14
-18
V DS — DR AIN – S OU RC E V OLTAGE (V )

TC = 25˚C
-12
-16
I D — D RA IN C UR R EN T (A)

TC = 75˚C
-10 -14
I D = -14A TC = 100˚C
-12
-8
-10
-6 -8
I D = -9A
-6
-4
I D = -5A -4
-2
-2
I D = -3A
0 0
-1 -2 -3 -4 -5 -6 -7 -8 -9 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 -11
V GS — GATE – SOURCE VOLTAGE (V) V GS — GATE – SOURCE VOLTAGE (V)

Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. Prelim. 2/95