Module: Electronics I Module Number: 610/650221-222

th
Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

Philadelphia University
Faculty of Engineering
Communication and Electronics Engineering

Bipolar Junction Transistor

Configurations:
Common Base Configuration

Fig. 3.2 Types of transistors: (a) pnp; (b) npn.

Fig. 3.6 Notation and symbols used with the
common-base configuration: npn transistor.

Fig. 3.8 Output or collector characteristics for a common-base transistor amplifier.

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Module: Electronics I Module Number: 610/650221-222
th
Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

Common Emitter Configuration

Fig. 3.13 Notation and symbols used with the

common-emitter configuration: npn transistor

Fig. 3.14 Characteristics of a silicon transistor in the common-emitter configuration: (a) collector characteristics; (b)
base characteristics.

Common Collector Configuration

Fig. 3.20 Notation and symbols used with the common-collector

configuration: (a) pnp transistor; (b) npn transistor.

Lecturer: Dr. Omar Daoud Part II 2

Module: Electronics I Module Number: 610/650221-222
th
Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

Operating Point

Fig. 4.1 Various operating points within the limits of operation of a transistor.

Fixed Bias Circuit

Fig. 4.2 Fixed-bias circuit.

Fig. 4.3 DC equivalent of Fig. 4.2.

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 Module: Electronics I Module Number: 610/650221-222
th
Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

Fig. 4.5 Collector–emitter loop.

Fig. 4.4 Base–emitter loop.

Fig. 4.7 DC fixed-bias circuit for Example 4.1.

Fig. 4.9 Determining ICsat. Fig. 4.10 Determining ICsat for the fixed-bias configuration.

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Module: Electronics I Module Number: 610/650221-222
th
Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

Example 4.1.:

Example 4.3:

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 Module: Electronics I Module Number: 610/650221-222
th
Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

Emitter Bias

Fig. 4.18 Base–emitter loop.

Fig. 4.17 BJT bias circuit with emitter resistor.

Fig. 4.19 Network derived from the result of Fig. Fig. 4.20 Reflected impedance level of RE.
4.18

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 Module: Electronics I Module Number: 610/650221-222
th
Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

Fig. 4.21 Collector–emitter loop. Fig. 4.14 Effect of an increasing level of RC on the load line
and the Q-point.

Fig. 4.15 Effect of lower values of VCC on the load line and the Q-point.

Lecturer: Dr. Omar Daoud Part II 7

Module: Electronics I Module Number: 610/650221-222
th
Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

Example 4.4:

Fig. 4.22 Emitter-stabilized bias

circuit for Example 4.4.

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Module: Electronics I Module Number: 610/650221-222
th
Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

Example 4.7:

Fig. 4.31 Beta-stabilized circuit for Example 4.7.

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Module: Electronics I Module Number: 610/650221-222
th
Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

Example 4.15:

Fig. 4.40 Collector feedback with RE = 0Ω

Lecturer: Dr. Omar Daoud Part II 10

Module: Electronics I Module Number: 610/650221-222
th
Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

Example 4.16:
Determine VC and VB for the network of Fig. 4.41.

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Module: Electronics I Module Number: 610/650221-222
th
Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

Example 4.17:

Fig. 4.42 Common-base configuration.

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Module: Electronics I Module Number: 610/650221-222
th
Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

Design Operation

Fig. 4.47 Example 4.19. Fig. 4.48 Example 4.20.

Example 4.19:

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Module: Electronics I Module Number: 610/650221-222
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Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

Example 4.20:

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Module: Electronics I Module Number: 610/650221-222
th
Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

Transistor Switching Network

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Module: Electronics I Module Number: 610/650221-222
th
Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

Example 4.24:

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Module: Electronics I Module Number: 610/650221-222
th
Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

AC Analysis:
• A model is an equivalent circuit that represents the AC characteristics of the
transistor.

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Module: Electronics I Module Number: 610/650221-222
th
Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

• A model uses circuit elements that approximate the behavior of the transistor.
• There are two models commonly used in small signal AC analysis of a
transistor:
– re model
– Hybrid equivalent model

The re Transistor Model:

BJTs are basically current-controlled devices, therefore the re model uses a diode and a
current source to duplicate the behavior of the transistor. One disadvantage to this model is its
sensitivity to the DC level. This model is designed for specific circuit conditions.

Common Base Configuration

Fig. 5.6 (a) Common-base BJT transistor; (b) re model for the configuration of (a).

Fig. 5.7 Common-base re equivalent circuit. Fig. 5.9 Defining Av = Vo/Vi for the common-
base configuration.

Common Emitter Configuration

Lecturer: Dr. Omar Daoud Part II 18

Module: Electronics I Module Number: 610/650221-222
th
Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

Common Collector Configuration

Use the common-emitter model for the common-collector configuration.

The Hybrid Equivalent Model:

The following hybrid parameters are developed and used for modeling the transistor.
These parameters can be found in a specification sheet for a transistor:

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Module: Electronics I Module Number: 610/650221-222
th
Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

• hi = input resistance
• hr = reverse transfer voltage ratio (Vi/Vo)  0
• hf = forward transfer current ratio (Io/Ii)
• ho = output conductance  

Fig. 5.22 Complete hybrid equivalent circuit.

Fig. 5.23 Common-emitter configuration: (a) graphical symbol; (b) hybrid equivalent
circuit

Fig. 5.24 Common-base configuration: (a) graphical symbol; (b) hybrid equivalent
circuit.

Lecturer: Dr. Omar Daoud Part II 20

Module: Electronics I Module Number: 610/650221-222
th
Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

Common-Emitter re vs. h-Parameter Model

Lecturer: Dr. Omar Daoud Part II 21

 Module: Electronics I Module Number: 610/650221-222
th
Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

BJT Amplifier Circuits:

Common Emitter Configurations:
Common Emitter Fixed-bias
• The input is applied to the base
• The output is from the collector
• High input impedance Vo (R || r )
• Low output impedance Av   C o
Vi re
• High voltage and current gain
RC
• Phase shift between input and output is 180 Av   r 10R
re o C
I R B ro
Ai  o 
I i (ro  R C )(R B   re )
Ai   ro 10R C , R B 10  re

Zi
A i  A v
RC

Fig. 5.36 Substituting the re model into the network of Fig.

5.35.
Fig. 5.34 Common-emitter fixed-bias configuration.

Fig. 5.35 Network of Fig. 5.34 following the removal

of the effects of VCC, C1 and C2. Fig. 5.37Determining Zo for the network of Fig. 5.36.

Lecturer: Dr. Omar Daoud Part II 22

Module: Electronics I Module Number: 610/650221-222
th
Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

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Module: Electronics I Module Number: 610/650221-222
th
Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

Example 5.4:

Solution:

Lecturer: Dr. Omar Daoud Part II 24

 Module: Electronics I Module Number: 610/650221-222
th
Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

Common Emitter Voltage-divider Bias

Vo  R C || ro
Av  
Vi re
Vo R
Av    C ro 10R C
Vi re
I R ro
Ai  o 
I i (ro  R C )(R    re )
I R 
Ai  o  r 10R
I i R    re o C
Io
Ai    ro 10R C , R 10 re
Ii
Z Fig. 5.40 Voltage-divider bias
A i  A v i configuration.
RC Fig. 5.42 Example 5.5.

Fig. 5.41Substituting the re equivalent circuit into the ac equivalent network of Fig. 5.40.

Lecturer: Dr. Omar Daoud Part II 25

Module: Electronics I Module Number: 610/650221-222
th
Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

Example 5.5:

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Module: Electronics I Module Number: 610/650221-222
th
Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

Solution:

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 Module: Electronics I Module Number: 610/650221-222
th
Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

Common Emitter Bias

Fig. 5.43 CE emitter-bias configuration.

Fig. 5.46 Example 5.6.

1) Unbypassed :

Vo R C
Av  
Vi Zb
Vo RC
Av   Z b   (re  R E )
Vi re  R E
Vo R
Av    C Z b  R E
Vi RE
I R B
Ai  o 
Ii R B  Zb
Z
A i  A v i
RC

Fig. 5.44 Substituting the re equivalent circuit into the ac equivalent

network of Fig. 5.43.

Lecturer: Dr. Omar Daoud Part II 28

Module: Electronics I Module Number: 610/650221-222
th
Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud Part II 29

Module: Electronics I Module Number: 610/650221-222
th
Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

Example 5.6:

Solution:

Common Base Configuration

• The input is applied to the emitter.
• The output is taken from the collector.
• Low input impedance.
• High output impedance.
• Current gain less than unity.
• Very high voltage gain.
• No phase shift between input and output.

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Module: Electronics I Module Number: 610/650221-222
th
Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

Vo R C R C
Av   
Vi re re
I
A i  o    1
Ii
Fig. 5.57 Common-base configuration.

Fig. 5.58 Substituting the re equivalent circuit into the ac equivalent network of Fig. 5.57.

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Module: Electronics I Module Number: 610/650221-222
th
Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

Fig. 5.59 Example 5.11.

Example 5.11:

Solution:

Common Collector (Emitter follower) Configuration

• The input is applied to the base.
• The output is taken from the emitter.
• The output voltage is slightly less than the input one (VoVi)
• It is use for impedance-matching purposes
• High input impedance.
• Low output impedance.
• No phase shift between input and output.

Lecturer: Dr. Omar Daoud Part II 32

Module: Electronics I Module Number: 610/650221-222
th
Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

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Module: Electronics I Module Number: 610/650221-222
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Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

Fig. 5.54 Example 5.10.

Example 5.10:

Solution:

Lecturer: Dr. Omar Daoud Part II 34

Module: Electronics I Module Number: 610/650221-222
th
Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud Part II 35