AOD3N40

400V,2.6A N-Channel MOSFET

General Description Product Summary

The AOD3N40 has been fabricated using an advanced

high voltage MOSFET process that is designed to deliver VDS 500V@150℃
high levels of performance and robustness in popular AC- ID (at VGS=10V) 2.6A
DC applications.
RDS(ON) (at VGS=10V) < 3.1Ω
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability this device can be
adopted quickly into new and existing offline power supply
designs.
100% UIS Tested!
100% Rg Tested!

TO252
DPAK
D
Top View Bottom View

D
D

G G
S
S
S
G

AOD3N40

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 400 V
Gate-Source Voltage VGS ±30 V
Continuous Drain TC=25°C 2.6
ID
CurrentB TC=100°C 1.6 A
Pulsed Drain Current C IDM 5.6
Avalanche Current C IAR 1.5 A
C
Repetitive avalanche energy EAR 34 mJ
Single pulsed avalanche energy H EAS 68 mJ
Peak diode recovery dv/dt dv/dt 5 V/ns
TC=25°C 50 W
B o
PD
Power Dissipation Derate above 25 C 0.4 W/ oC
Junction and Storage Temperature Range TJ, TSTG -50 to 150 °C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds TL 300 °C

Thermal Characteristics
Parameter Symbol Typical Maximum Units
Maximum Junction-to-Ambient A,G RθJA 46 55 °C/W
Maximum Case-to-sink A RθCS - 0.5 °C/W
D,F
Maximum Junction-to-Case RθJC 2.1 2.5 °C/W

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 AOD3N40

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
ID=250µA, VGS=0V, TJ=25°C 400
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=150°C 500 V
BVDSS
Zero Gate Voltage Drain Current ID=250µA, VGS=0V 0.4 V/ oC
/∆TJ
VDS=400V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
VDS=320V, TJ=125°C 10
IGSS Gate-Body leakage current VDS=0V, VGS=±30V ±100 nΑ
VGS(th) Gate Threshold Voltage VDS=5V ID=250µA 3.4 4 4.5 V
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=1A 2.5 3.1 Ω
gFS Forward Transconductance VDS=40V, ID=1A 1.7 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.8 1 V
IS Maximum Body-Diode Continuous Current 2.6 A
ISM Maximum Body-Diode Pulsed Current 5.6 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 145 186 225 pF
Coss Output Capacitance VGS=0V, VDS=25V, f=1MHz 15 26 37 pF
Crss Reverse Transfer Capacitance 1.2 2.1 4.1 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 2.2 4.4 6.6 Ω
SWITCHING PARAMETERS
Qg Total Gate Charge 3.3 4.2 5.1 nC
Qgs Gate Source Charge VGS=10V, VDS=320V, ID=2.6A 1.2 1.7 2.1 nC
Qgd Gate Drain Charge 0.5 1.0 1.5 nC
tD(on) Turn-On DelayTime 14 ns
tr Turn-On Rise Time VGS=10V, VDS=200V, ID=2.6A, 10 ns
tD(off) Turn-Off DelayTime RG=25Ω 18 ns
tf Turn-Off Fall Time 8 ns
trr Body Diode Reverse Recovery Time IF=2.6A,dI/dt=100A/µs,VDS=100V 110 140 170 ns
Qrr Body Diode Reverse Recovery Charge IF=2.6A,dI/dt=100A/µs,VDS=100V 0.5 0.64 0.8 µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in
setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C.
G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. L=60mH, IAS=1.5A, VDD=150V, RG=10Ω, Starting TJ=25°C

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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 AOD3N40

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

5 10
-55°C
10V VDS=40V
4

3 7V
ID (A)

ID(A)
1 125°C
2 6V

25°C
1

VGS=5.5V
0 0.1
0 5 10 15 20 25 30 2 4 6 8 10
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

7 3

6 Normalized On-Resistance 2.5

VGS=10V
ID=1A
5 VGS=10V 2
Ω)
RDS(ON) (Ω

4 1.5

3 1

2 0.5

1 0
0 1 2 3 4 -100 -50 0 50 100 150 200

ID (A) Temperature (°C)

Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction Temperature
Voltage

1.2 1.0E+01
ID=30A
1.0E+00
1.1 40 125°C
BVDSS (Normalized)

1.0E-01
25°C
IS (A)

1 125°
1.0E-02

0.9
25° 1.0E-03

0.8 1.0E-04
-100 -50 0
50 100 150 200 0.2 0.4 0.6 0.8 1.0
TJ (oC) VSD (Volts)
Figure 5: Break Down vs. Junction Temperature Figure 6: Body-Diode Characteristics

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 AOD3N40

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

15 1000

Ciss
VDS=320V
12 ID=2.6A

Capacitance (pF)
100 Coss
VGS (Volts)

6
10
Crss
3

0 1
0 2 4 6 0.1 1 10 100
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

10 800
10µs

RDS(ON) 100µs 600 TJ(Max)=150°C

1 limited TC=25°C
Power (W)
ID (Amps)

1ms
10ms 400

DC 0.1s
0.1
200
TJ(Max)=150°C
TC=25°C

0.01 0
1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10
VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Case (Note F)

10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JC Normalized Transient

RθJC=2.5°C/W
Thermal Resistance

0.1

PD
0.01
Single Pulse Ton
T
0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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 AOD3N40

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

60 3.0

50 2.5
Power Dissipation (W)

Current rating ID(A)

40 2.0

30 1.5

20 1.0

10 0.5

0 0.0
0 25 50 75 100 125 150 0 25 50 75 100 125 150
TCASE (°C) TCASE (°C)
Figure 12: Power De-rating (Note B) Figure 13: Current De-rating (Note B)

400

TJ(Max)=150°C
300 TA=25°C
Power (W)

200

100

0
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient

RθJA=55°C/W
Thermal Resistance

0.1

PD
0.01
Ton
Single Pulse T
0.001
1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)

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 AOD3N40

Gate Charge Test Circuit & Waveform

Vgs
Qg

+ 10V
VDC
+ Qgs Qgd
- VDC Vds
DUT -
Vgs
Ig

Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+
Vgs VDC Vdd
Rg -
10%

Vgs Vgs t d(on) tr t d(off) tf

t on t off

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds EAR= 1/2 LI AR BVDSS

Id Vds

Vgs +
Vgs VDC Vdd I AR
Rg - Id

DUT
Vgs Vgs

Diode Recovery Tes t Circuit & Waveforms

Vds + Qrr = - Idt

DUT
Vgs

Vds - L Isd IF trr

Isd dI/dt
+ Vdd IRM
Vgs VDC
Vdd
Ig
- Vds

Rev0: Oct 2011 www.aosmd.com Page 6 of 6