Phototransistor

a. What is

The phototransistor is a semiconductor device that is able to sense light levels and alter
the current flowing between emitter and collector according to the level of light it
receives.

b. How it works

The phototransistor effectively converts light energy to an electrical signal. Once the light
falls on the material then the charge carriers like holes or electrons of the semiconductor
material can cause the current to supply within the base area. The base region of this
can be used for transistor biasing.

c. Where/Applications

Phototransistors are used in almost all electronic devices that depend on light including
smoke detectors, laser-ranging finding devices, and optical remote controls. They detect
visible, ultraviolet, and near-infrared light from a variety of sources and are more
sensitive than photodiodes.

d. Why
The phototransistor is relatively inexpensive and easy to manufacture, making it an
attractive option for low-cost visible and near-infrared photodetection.
One of the key advantages of a phototransistor is its fast response time. When light hits
the transistor’s base layer, electrons are released almost instantaneously and move
towards the collector layer. This means that signals can be detected within milliseconds,
which makes phototransistors ideal for applications requiring ultra-fast reaction times.
Phototransistors are able to convert light into electrical voltage. This means that they can
be used in a variety of applications such as remote controls, medical imaging, and even
optical communication systems. The amount of current generated by the phototransistor
depends on the intensity of the incident light and this makes them ideal for detecting low-
level changes in lighting.

e. Computation involved.
 Below saturation, the phototransistor implements the equations IC = βIB, where IC is the
collector current and β is the transistor’s gain, and IE = IC + IB, where IE is the emitter
current.
Formula:
IC = βIB or IC = αIE
IE = I C + I B
IB = I E - I C
β = I C / IB or β = α / α-1
α = IC / IE or α=β/β+1

Example Problems:

1. In a common base connection, current amplification factor is 0.9. If the emitter

current is 1mA, determine the value of base current.

Solution:

2. For the common base circuit shown in Fig. 1, determine IC and VCB. Assume the
transistor to be of silicon.

Fig. 1

Solution:

Since the transistor is of silicon, VBE = 0.7V.

Applying Kirchhoff’s voltage law to the emitter-side loop, we get,

 Applying Kirchhoff’s voltage law to the collector-side loop, we have,

3. A transistor is connected in common emitter (CE) configuration in which collector

supply is 8 V and the voltage drop across resistance RC connected in the collector
circuit is 0.5 V. The value of RC = 800 Ω. If α = 0.96, determine: (i) collector-emitter
voltage (ii) base current.

(i)

(ii)